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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Input matched
  • Integrated ESD protection
  • Low thermal resistance
  • High gain
  • Thermally enhanced package
  • RoHS compliant
  • Capable of withstanding a 10:1 VSWR at

130 W average power under DVB-T signal

  • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) RF Characteristics DVB-T (8K OFDM, 64QAM) Characteristics (tested in Infineon test fixture, narrowband 806 MHz) VDD = 50 V , IDQ = 1200 mA, ƒ = 806 MHz, input P AR = 10.5 dB (unclipped), output P AR = 7.8 dB @ 0.01% CCDF probability Characteristic Symbol Min Typ Max Unit Average Output Power POUT — 130 — W Gain Gps 16.5 17.5 — dB Drain Efficiency hD 24 29 — % Adjacent Channel Power Ratio ACPR — –29.5 –25 dBc (ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency) 450 500 550 600 650 700 750 800 850 Drain Efficiency (%), Gain (dB) Frequency (MHz) DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg Drain Efficiency Gain ptva047002ev_g5

Data Sheet 2 of 8 Rev. 04.1, 2015-07-08 PTVA047002EV DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 111 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 1200 mA VGS — 3.6 — V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 135 W CW) RqJC 0.215 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTVA047002EV V1 R0 PTVA047002EVV1R0XTMA1 H-36275-4, bolt-down Tape & Reel, 50pcs PTVA047002EV V1 R250 PTVA047002EVV1R250XTMA1 H-36275-4, bolt-down Tape & Reel, 250pcs RF Characteristics Typical DVB-T (8K OFDM, 64QAM) Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 600 mA per side, tf = 25°C, DVB-T signal, BW = 8MHz, Mode = 8k, Modulation = 64-QAM, Guard = 1/4, Code rate = 1/2, P AR= 10.5 dB, ACPR integrated over 200 KHz BW at +4.3 MHz offset from center frequency Freq (MHz) Gain (dB) IRL (dB) I (A) Eff (%) POUT Avg (W) ACPR Up ACPR Low 470 21.45 3.35 10.4 26.5 138 32 33 550 20.6 4.6 9.03 30.6 138 29 29 650 19.6 4.26 9.53 28.7 137 31 31 750 19.2 3.92 9.25 29.3 136 30 31 806 20 6.36 9.07 29.5 134 28 29

Data Sheet 3 of 8 Rev. 04.1, 2015-07-08 PTVA047002EV Typical Performance (cont.) -60 -50 -40 -30 -20 30 35 40 45 50 55 Efficiency(%) IMD Up & Low (dBc) Average Output Power (dBm) Two Tone Drive-up VDD = 50 V, IDQ = 1250 mA, ƒ = 806 MHz, 1MHz Tone Spacing Efficiency IM3 Up IM3 Low ptva047002ev_g2 0 -70 -60 -50 -40 -30 30 35 40 45 50 55 Efficiency(%) IMD Up & Low (dBc) Average Output Power (dBm) Two Tone Drive-up VDD = 50 V, IDQ = 1250 mA, ƒ = 806 MHz, 1MHz Tone Spacing Efficiency IM5Up IM5Low ptva047002ev_g3 -10 350 450 550 650 750 850 950 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 50 V, IDQ = 1250 mA IRL Gain ptva047002ev_g4 200 300 400 500 600 700 800 900 Efficiency (%) Gain (dB) Output Power (W) Pulse CW Performance VDD = 50 V, IDQ = 1250mA, 100us, 10% DC 470MHz Gain 550MHz Gain 650MHz Gain 750MHz Gain 806MHz Gain 470MHz Eff 550MHz Eff 650MHz Eff 750MHz Eff 806MHz Eff ptva047002ev_g1

Data Sheet 4 of 8 Rev. 04.1, 2015-07-08 PTVA047002EV Reference Circuit , 470 – 806 MHz Reference circuit assembly diagram (not to scale) R101 C107 C106 C103C104C105 C110 C109 C108 R102 C111 C102 C101 C116 C115 C112 C117 C118 C113 C114 R105 R104 R103 C202 C204 C210 C216 C208 C209 R204 R201 R202 C205 C206 C211 C212 C213 C201 C203 R207 R206 R208 C217 C215 C207 R209 R205 RF_IN RF_OUT VDD VG2 VG1 VDD p t v a 0 4 7 0 0 2 e v _ C D _ 0 6 - 0 5 - 2 0 1 5 R203 C218 C214 PTVA047002EV _OUT_06_BPTVA047002EV_IN_07A RO4350, .020 (62)RO4350, .020 (62) VDDVGS VGS Each Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, 50 V, 600 mA P3dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Load Pull Performance

Data Sheet 5 of 8 Rev. 04.1, 2015-07-08 PTVA047002EV Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA047002EV V1 Test Fixture Part No. LTN/PTVA047002EV V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 470 – 806 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N Input C101, C102 Capacitor, 12 pF ATC ATC800A120JW150XB C103, C104, C105, C106, C107 Capacitor, 10 pF ATC ATC100A100JW150XB C108, C109 Capacitor, 100 pF ATC ATC100A101JW150XB C110, C113, C117 Capacitor, 91 pF ATC ATC100B910JW500XB C111, C112, C115, C116 Capacitor, 16 pF ATC ATC100A160JW150XB C114, C118 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA R101, R102 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R103, R104 Resistor, 5.6 W Panasonic Electronic Components ERJ-8GEYJ5R6V R105 Coax, 25 W Micro-coax UT -090C-25 Output C201 Capacitor, 8.2 pF ATC ATC100A8R2JW150XB C202 Capacitor, 6.8 pF ATC ATC100A6R8JW150XB C203, C205 Capacitor, 4.7 pF ATC ATC100A4R7JW150XB C204 Capacitor, 4.1 pF ATC ATC100A4R1JW150XB C206 Capacitor, 2 pF ATC ATC100A2R0JW150XB C207 Capacitor, 8.2 pF ATC ATC100A8R2JW150XB C208, C210 Capacitor, 100 pF ATC ATC100A101JW150XB C209, C211, C215 Capacitor, 91 pF ATC ATC100B910JW150XB C212, C213, C216, C217 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C214, C218 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST R201, R202, R203, R204, R205, R206, R207,R208 Resistor, 1 W Panasonic Electronic Components ERJ-8GEYJ1R0V R209 Coax, 25 W Micro-coax UT -090C-25

Data Sheet 6 of 8 Rev. 04.1, 2015-07-08 PTVA047002EV D2D1 G1 G2 S Pinout Diagram (top view) Lead connections for PTVA047002EV Pin Description D1 Drain device 1 D2 Drain device 2 G1 Gate device 1 G2 Gate device 2 S Source (Flange) See next page for package outline information

Data Sheet 7 of 8 Rev. 04.1, 2015-07-08 PTVA047002EV Package Outline Specifications Package H-36275-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower S 35.56 [1.400] 4X 11.68 [.460] CL 2X 45° X 1.19 [45° X .047] 10.16 [.400] 9.144 [.360] C LC 2x 2.03 [.080] REF 13.72 [.540] 16.612±0.500 [.654±.020] 2X R1.59 [R.062] 3.23±0.51 [.127±.020] 8X R0.51+0.13 -0.51 [R.020+.005 -.020 ] LC L 41.15 [1.620] 31.242±0.280 [1.230±.011]1.63 [.064] 2.13 [.084] SPH C LCLC L 4.58+0.25 -0.13 .180+.010 -.005 ] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

Data Sheet 8 of 8 Rev. 04.1, 2015-07-08 Edition 2015-07-08 Published by Infineon Technologies AG

81726 Munich, Germany

© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTVA0472002EV V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-05-08 Preliminary All Data Sheet reflects preliminary specification 02 2012-05-10 Preliminary 1 Updated DVB-T Characteristics table 03 2013-10-03 Preliminary 1, 2, 3 Updated DVB-T Characteristics table, eliminate two-tone specification, added DVB-T perform- ance graphs 03.1 2013-10-15 Preliminary 1, 3 Revised frequency in Pulsed CW specifications, removed two-tone and Pulsed CW graphs 04 2015-06-18 Production All Data Sheet reflects released product specification Includes loadpull, impedance information & reference circuits, updated test specs & graphs 04.1 2015-07-08 Production 2 Updated ordering information to include Tape & Reel, 50pcs.