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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
- Input matched
- Integrated ESD protection
- Human Body Model Class 1C (per ANSI/ ESDA/JEDEC JS-001)
- Low thermal resistance
- RoHS compliant
- Capable of withstanding a 10:1 VSWR at 55W average power under DVB-T signal condition RF Characteristics DVB-T (8K OFDM, 64QAM) Characteristics (tested in Infineon test fixture) VDD = 50 V , IDQ = 800 mA, ƒ = 806 MHz, input P AR = 10.5 dB (unclipped), output P AR = 7.8 dB @ 0.01% CCDF probability Characteristic Symbol Min Typ Max Unit Average Output Power POUT — 55 — W Gain Gps 17.5 19 — dB Drain Efficiency hD 23 25.5 — % Adjacent Channel Power Ratio ACPR — –29.5 –25 dBc (ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency) PTVA042502EC Package H-36248-4 -33 -31 -29 -27 -25 -23 450 500 550 600 650 700 750 800 850 IMD Shoulder (dBc) Efficiency (%), Gain (dB) Frequency (MHz) DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg Efficiency Gain IMD Shoulder ptva042502fc_g1 ACPR
Data Sheet 2 of 10 Rev. 03.1, 2016-04-19 PTVA042502EC PTVA042502FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 800 mA VGS 3.0 3.7 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 55 W CW) (S) RqJC 0.4 °C/W
Ordering Information
Type and Version Order Code Package and Description Shipping PTVA042502EC V1 R0 PTVA042502ECV1R0XTMA1 H-36248-4, push-pull, bolt-down Tape & Reel, 50pcs PTVA042502EC V1 R250 PTVA042502ECV1R250XTMA1 H-36248-4, push-pull, bolt-down Tape & Reel, 250pcs PTVA042502FC V1 R0 PTVA042502FCV1R0XTMA1 H-37248-4, push-pull, earless Tape & Reel, 50pcs PTVA042502FC V1 R250 PTVA042502FCV1R250XTMA1 H-37248-4, push-pull, earless Tape & Reel, 250pcs
Data Sheet 3 of 10 Rev. 03.1, 2016-04-19 PTVA042502EC PTVA042502FC Typical Performance (cont.) 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 50 V, IDQ = 800mA, ƒ = 470 MHz Efficiency Gain ptva042502fc_g2 0 -60 -50 -40 -30 -20 30 35 40 45 50 55 Efficiency(%) IMD Up & Low (dBc) Average Output Power (dBm) Two Tone Drive-up VDD = 50 V, IDQ = 800 mA, ƒ = 470 MHz, 1MHz Tone Spacing IM3 Up IM3 Low Efficiency ptva042502fc_g3 -60 -50 -40 -30 -20 30 35 40 45 50 55 Efficiency(%) IMD Up & Low (dBc) Average Output Power (dBm) Two Tone Drive-up VDD = 50 V, IDQ = 800 mA, ƒ = 806 MHz, 1MHz Tone Spacing IM3 Up IM3 Low Efficiency ptva042502fc_g4 -15 -10 250 350 450 550 650 750 850 950 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 50 V, IDQ = 800 mA IRL Gain ptva042502fc_g5
All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 4 of 10 Rev. 03.1, 2016-04-19 Load Pull Performance Pulsed CW signal: 16 µs, 10% duty cycle, 50 V, 100 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Pulsed CW signal: 16 µs, 10% duty cycle, 50 V, 100 mA P3dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%]
Data Sheet 5 of 10 Rev. 03.1, 2016-04-19 PTVA042502EC PTVA042502FC Reference Circuit , 470 – 806 MHz Reference circuit assembly diagram (not to scale) PTVA042502FC_IN_04 C102 RF_IN RF_OUT VDD VGS VDD p t v a 0 4 2 5 0 2 f c _ C D _ 0 4 - 2 9 - 2 0 1 5 C101 C121 C105 C104 C106 C108 C107 C109 R201 C205 C204 C206 C202 C201 C203 C212 C110 C111C112 PTVA042502FC_OUT_04 RO4350, .020 (105) RO4350, .020 (193) R101 C113 C115 C116 C114 C103 R102 R103 C117 C118 C119 C120 C221C213 C211 C215 C214 C216 C218 C217 C219 C220 C207 C208 C209 C210 VGS
Data Sheet 6 of 10 Rev. 03.1, 2016-04-19 PTVA042502EC PTVA042502FC Reference Circuit (cont.) Components Information Component Description Manufacturer P/N Input C101, C102 Capacitor, 20 pF ATC ATC100A200JW150XB C103, C104, C112, C115 Capacitor, 8.2 pF ATC ATC100A8R2JW150XB C105, C106 Capacitor,120 pF ATC ATC700A120KP150XB C107, C108, C109, C110, C117, C121 Capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88L C111, C113 Capacitor, 10 pF ATC ATC100A100JW150XB C114, C116 Capacitor, 6.8 pF ATC ATC100A6R8JW150XB C118, C120 Capacitor, 100 pF ATC ATC100A101JW150XB C119 Capacitor, 91 pF ATC ATC100A910JW150XB R101, R102 Resistor, 1K W Panasonic Electronic Components ERJ-8GEYJ102V R103 Coax, 25 W AMWAYE UT -090C-25 Output C201, C202 Capacitor, 270 pF ATC ATC700A271KP150XB C203, C204, C205, C206, C220, C221 Capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88L C207, C208, C209, C210 Capacitor, 100 µF Panasonic Electronic Components EEE-FP1V101AP C211 Capacitor, 3.9 pF ATC ATC100A3R9CW150XB C212 Capacitor, 6.8 pF ATC ATC100A6R8JW150XB C213, C215 Capacitor, 8.2 pF ATC ATC100A8R2JW150XB C214 Capacitor, 5.6 pF ATC ATC100A5R6CW150XB C216 Capacitor, 3.3 pF ATC ATC100A3R3CW150XB C217, C218 Capacitor, 100 pF ATC ATC100A101JW150XB C219 Capacitor, 91 pF ATC ATC100A910JW150XB R201 Coax, 25 W AMWAYE UT -090C-25 Reference Circuit Assembly DUT PTVA042502EC or PTVA042502FC Test Fixture Part No. LTN/PTVA042502EC V1 or LTN/PTVA042502FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 470 – 806 MHz Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower
Data Sheet 7 of 10 Rev. 03.1, 2016-04-19 PTVA042502EC PTVA042502FC Pinout Diagram (top view) Pin Description D1 Drain device 1 D2 Drain device 2 G1 Gate device 1 G2 Gate device 2 S Source (Flange) Lead connections for PTVA042502EC and PTVA042502FC S D1 D2 G1 G2 S D1 D2
Data Sheet 8 of 10 Rev. 03.1, 2016-04-19 PTVA042502EC PTVA042502FC Package Outline Specifications Package H-36248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 19.81±0.20 [.780±0.008] D1 D2 G1 G2 1.02 [.040] 34.04 [1.340] SPH 1.57 [.062] 3.76±0.25 [.148±0.010] FLANGE 9.78 [.385] LID 9.40 [.370]19.43±0.51 [.765±0.020] 4X 3.81 [.150] 2X 12.70 [.500] 2X 4.83±0.51 [.190±0.020] 4X R1.52 [R.060] 2X R1.63 [R.064] S 27.94 [1.100] 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200])
Data Sheet 9 of 10 Rev. 03.1, 2016-04-19 PTVA042502EC PTVA042502FC Package Outline Specifications (cont.) Package H-37248-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-
Data Sheet 10 of 10 Rev. 03.1, 2016-04-19 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2016-04-19 Published by Infineon Technologies AG
85579 Neubiberg, Germany
© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTVA042502EC/FC V1
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-09-19 Preliminary All Data Sheet reflects preliminary specification 02 2013-10-01 Preliminary 1 1, 2, 4, 5 Updated DVB-T characteristics, updated frequency range Updated DVB-T performance graphs Added H-36248-4 package information, pinout diagram and package outline Updated package outline specification 02.1 2013-10-20 Preliminary 1, 2 Removed obsolete Pulsed Characteristics from Features, Removed Obsolete Pulsed CW table 03 2014-05-26 Production All 1, 2 3, 4 Data Sheet reflects released product specification Updated Features, DVB-T Charateristics table, thermal resistance Updated all grahps, added loadpull information 03.1 2016-04-19 Production 1, 2 Added ESD rating, updated ordering information