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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
- Unmatched input and output
- High gain and efficiency
- Integrated ESD protection
- Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS-compliant
- Capable of withstanding a 13:1 load mismatch at 57 dBm under pulsed conditions: 12 µsec pulse width, 10% duty cycle RF Characteristics Pulsed CW Class AB Characteristics (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 0.5 A, POUT = 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps — 18 — dB Drain Efficiency hD — 64 — % 48 50 52 54 56 58 60 Drain Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance 450 MHz, VD = 50 V, IDQ = 0.5 A, 12 µsec pulse width, 10% duty cycle Gain Efficiency Gain Efficiency a035002 gr 1
Data Sheet 2 of 8 Rev. 05.2, 2016-06-08 RF Characteristics Pulsed CW Characteristics (tested in Infineon test fixture) VDD = 50 V, VGS = 2.9 V, IDQ = 0.0 A, POUT = 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 14.75 15.5 — dB Drain Efficiency hD 63 66 — % DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 600 mA VGS — 3.70 — V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 300 W CW) RqJC 0.20 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping PTVA035002EV V1 R0 PTVA035002EVV1R0XTMA1 H-36275-4, bolt-down Tape & Reel, 50pcs PTVA035002EV V1 R250 PTVA035002EVV1R250XTMA1 H-36275-4, bolt-down Tape & Reel, 250pcs
Data Sheet 3 of 8 Rev. 05.2, 2016-06-08 PTVA035002EV Typical Performance (data taken in production test fixture) ficiency (%) n (dB) Power Sweep, Pulsed CW VDD = 50 V, VG = 2.9 V, 12 µsec pulse width, 10% duty cycle, power optimized Gain 48 50 52 54 56 58 60 Drain Eff Gai Output Power (dBm) Efficiency
450 MHz
420 MHz
390 MHz
ficiency (%) n (dB) Power Sweep, Pulsed CW 12 µsec pulse width, 10% duty cycle VDD = 50 V, VG = 2.9 V, efficiency optimized Gain Efficiency 48 50 52 54 56 58 60 Drain Eff Gai Output Power (dBm) a035002ev_gr3-2 (dB) Pulsed CW Gain VDD = 50 V, 450 MHz, 12 µsec pulse width, 10% duty cycle, series show IDQ IDQ = 0.02 A 0.5 A 1.5 A 48 50 52 54 56 58 60 Gain Output Power (dBm) a03500 gr 3-4 ciency (%) n (dB) Pulsed CW Performance VGG = 2.9 V, 450 MHz, 2 µsec pulse width, 10% duty cycle, for selected VDD VDD = 50 V VDD = 40 V VDD = 30 V Gain 45 47 49 51 53 55 57 59 Drain Effi Gai Output Power (dBm) Efficiency a035002 gr 3
Data Sheet 4 of 8 Rev. 05.2, 2016-06-08 ency (%) Pulsed CW Efficiency VD = 50 V, 450 MHz, 12 µsec pulse width, 10% duty cycle, series show IDQ 0.5 A IDQ = 0.02 A 48 50 52 54 56 58 60 Efficie Output Power (dBm) 1.5 A a035002 gr 6 Frequency Z Source W Z Load W MHz R jX R jX 390 1.28 –0.12 1.80 –2.22 405 1.35 0.18 1.86 –1.91 420 1.43 0.48 1.92 –1.62 435 1.54 0.76 1.98 –1.35 450 1.67 1.04 2.02 –1.11 Typical Performance (cont.) Broadband Circuit Impedance
Data Sheet 5 of 8 Rev. 05.2, 2016-06-08 PTVA035002EV Reference Circuit, 390 – 450 MHz Reference circuit assembly diagram (not to scale)* PTVA035002_IN_03 TMM10, .050 (63) p t v a 0 3 5 0 0 2 e v _ C D _ 0 7 - 0 8 - 2 0 1 3 TMM10, .050 (63) PTVA035002_OUT_03 C102 RF_IN RF_OUT VDD C101 C103 C105 C104 C106 C107 C109 R102 R101 R104 C204 C206 C208 C207 C209 R802 R801R803 R805 R804R806 C202 C201 C203 C210 C212 R108 R105 R106 R103 R110 R109 R112 R113 R114 R111 R107 R807 C801 C802 C803 C108 S2 S1 C211 C205 4 5 1 2 PTVA035002EV VDD VDD Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower
Data Sheet 6 of 8 Rev. 05.2, 2016-06-08 Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA035002EV Test Fixture Part No. LTN/PTVA035002EV PCB Rogers TMM10, 1.27 mm [0.050"] thick, 2 oz. copper, εr = 9.2 Components Information Component Description Suggested Manufacturer P/N Input C101, C102, C104 Capacitor, 300 pF ATC ATC100B301KW200X C103, C108 Capacitor, 20 pF ATC ATC100B200KW500X C105, C106, C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K C107, C109 Capacitor, 6.2 pF ATC ATC100B6R2CT500X R101, R102, R103, R104, R105, R106, R109, R110, R111, R112, R113, R114 Resistor, 5.6 W Panasonic Electronic Components ERJ-8GEYJ5R6V R107, R108 Resistor, 1000 W Panasonic Electronic Components ERJ-8GEYJ102V R801 Resistor, 100 W Panasonic Electronic Components ERJ-8GEYJ101V R802 Resistor, 2000 W Panasonic Electronic Components ERJ-8GEYJ202V R803 Resistor, 3600 W Panasonic Electronic Components ERJ-8GEYJ362V R804 Resistor, 1300 W Panasonic Electronic Components ERJ-3GEYJ132V R805 Resistor, 1200 W Panasonic Electronic Components ERJ-3GEYJ122V R806 Resistor, 2400 W Panasonic Electronic Components ERJ-8GEYJ242V R807 Resistor, 6200 W Panasonic Electronic Components ERJ-8GEYJ622V S1 Transistor Infineon Technologies BCP56 S2 Voltage regulator Texas Instruments LM7805 S3 Potentiometer Bourns Inc. 3224W-1-202E Output C201, C206, C209 Capacitor, 300 pF ATC ATC100B301KW200X C202 Capacitor, 3 pF ATC ATC100B3R0CW500X C203, C204 Capacitor, 4.3 pF ATC ATC100B4R3CW500X C205, C211 Capacitor, 100 µF United Chemi-Con EMVE101ARA101MKE0S C207, C212 Capacitor, 10 µF TDK Corporation C5750X7S2A106M230KB C208, C210 Capacitor, 2.2 µF TDK Corporation C4532X7R2A225K230KA S1, S2 Inductor, 17.5 nH Coilcraft B06TGLB
Data Sheet 7 of 8 Rev. 05.2, 2016-06-08 S 35.56 [1.400] 4X 11.68 [.460] CL 2X 45° X 1.19 [45° X .047] 10.16 [.400] 9.144 [.360] C LC 2x 2.03 [.080] REF 13.72 [.540] 16.612±0.500 [.654±.020] 2X R1.59 [R.062] 3.23±0.51 [.127±.020] 8X R0.51+0.13 -0.51 [R.020+.005 -.020 ] LC L 41.15 [1.620] 31.242±0.280 [1.230±.011]1.63 [.064] 2.13 [.084] SPH C LCLC L 4.58+0.25 -0.13 .180+.010 -.005 ] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Package Outline Specifications Package H-36275-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 - drain, G1, G2 - gate, S - source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
85579 Neubiberg, Germany
© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 8 of 8 Rev. 05.2, 2016-06-08 PTVA035002EV V1
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2010-10-07 Advance All Data Sheet reflects advance specification for product development 02 2010-12-09 Advance 1, 2 Added ESD and VSWR information and revised conditions of test, Revise conditions of test. 03 2011-04-28 Preliminary All Convert to Preliminary Data Sheet, adding performance graphs, substantiating some characterizations. 04 2012-02-24 Production All 4 – 9 Convert to final Data Sheet for production-released product. Add impedance data, Add reference circuit 05.1 2016-04-19 Production 1, 2 Added ESD rating, updated ordering information 05.2 2016-06-08 Production 2 Updated ordering information to include R250