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  • PDF pages: 10

Technical content

Features

  • Broadband internal input and output matching
  • Asymmetrical design - Main : P1dB = 210 W Typ - Peak : P1dB = 340 W Typ
  • Typical Pulsed CW performance, 896 MHz, 48 V, Doherty configuration - Output power at P1dB = 300 W Output power at P3dB = 420 W - Efficiency = 53% - Gain = 17.5 dB
  • Capable of handling 10:1 VSWR @ 48 V, 100 W (CW) output power
  • Integrated ESD protection
  • Human Body Model class 1C (per ANSI/ESDA/ JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant

Description

The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon Doherty production test fixture) VDD = 48 V, IDQ = 450 mA, VGS(PEAK) = 2.05 V, POUT = 87 W avg, ƒ = 895 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 16.5 17.5 — dB Drain Efficiency hD 48.5 52.5 — % Adjacent Channel Power Ratio ACPR — –30.5 –26.5 dBc Output PAR@0.01% CCDF OPAR 7.1 7.5 — dB -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.05 V, ƒ = 895 MHz, 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF ptra094808nf_g1 PTRA094808NF Package PG-HBSOF-6-2

Data Sheet 2 of 10 Rev. 03, 2017-08-21 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 48 V, VGS = 0 V IDSS — — 1 µA V DS = 105 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 14 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (Main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.08 — W (Peak) V GS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage (Main) VDS = 48 V, IDQ = 0.45 A VGS 3 3.5 4 V (Peak) VDS = 48 V, IDQ = 0 A VGS — 2.05 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (Main, TCASE = 70°C, 87.1 W CW) R qJC 0.51 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTRA094808NF V1 R5 PTRA094808NFV1R5XUMA1 PG-HBSOF-6-2 Tape & Reel, 500 pcs

Data Sheet 3 of 10 Rev. 03, 2017-08-21 PTRA094808NF Typical RF Performance (data taken in production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.05 V, ƒ = 895MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency ptra094808nf_g2 -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 750 800 850 900 950 1000 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.05 V, POUT = 49.4 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL ptra094808nf_g4 750 800 850 900 950 1000 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.05 V, POUT = 49.4 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain ptra094808nf_g3 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.05 V 855MHz 875MHz 895MHz ptra094808nf_g5 855MHz 875MHz 895MHz Gain Efficiency

Data Sheet 4 of 10 Rev. 03, 2017-08-21 Typical RF Performance (cont.) 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.05 V, ƒ = 895 MHz 44V 48V 52V ptra094808nf_g6 Gain Efficiency -25 -21 -17 -13 775 825 875 925 975 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 2.05 V IRL Gain ptra094808nf_g7

Data Sheet 5 of 10 Rev. 03, 2017-08-21 PTRA094808NF Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µsec, 10% duty cycle, VDD = 48 V, IDQ = 350 mA, class AB P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 µsec, 10% duty cycle, VDD = 48 V, VGS(PEAK) = 2 V, class C P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%]

Data Sheet 6 of 10 Rev. 03, 2017-08-21 Pinout Diagram (top view) G1 G2 D2D1 Main PeakV1 V2 Reference Circuit, 869 – 894 MHz Reference circuit assembly diagram (not to scale) R104 R105 C115 C102 C107 C106 C101 C111 C110 C109 C108 R102 C113 C114 R101C105 C104R103 C103 C112 C211 C212 C210 C213 C214 C215 C216 C203 C207 C209 C206 C205 C208 C202 C201 C204 C217 C218 U1 RF_OUTRF_IN RO4360, 24 MIL PTRA094808NF_OUT_04 PTRA094808NF_IN_04 RO4360,

24 MIL

(285) VGS (MAIN) VGS (PEAK) VDD VDD Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1 (Main) G2 Gate Device 2 (Peak) S Source (flange) V1 Drain video decoupling, no DC bias V2 NC or connected to GRD S

Data Sheet 7 of 10 Rev. 03, 2017-08-21 PTRA094808NF Reference Circuit (cont.) Reference Circuit Assembly DUT PTRA094808NF V1 Test Fixture Part No. LTA/PTRA094808NF V1 PCB Rogers 4360, 0.609 mm [0.024”] thick, 2 oz. copper, εr = 6.15, ƒ = 869 – 894 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N Input C101 Capacitor, 6.8 pF ATC ATC600F6R8BT250T C102 Capacitor, 2.7 pF ATC ATC600F2R7BT250T C103, C105 Capacitor, 1.8 pF ATC ATC600F1R8BT250T C104, C111 Capacitor, 33 pF ATC ATC600F330JT250T C106, C113 Capacitor, 68 pF ATC ATC600F680JT250T C107, C114, C115 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C108 Capacitor, 8.2 pF ATC ATC100B8R2BT500XB C109 Capacitor, 2.0 pF ATC ATC600F2R0BT250T C110 Capacitor, 1.0 pF ATC ATC600F1R0BT250T C112 Capacitor, 3.3 pF ATC ATC600F3R3BT250T R101, R102 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R103 Resistor, 50 ohms ANAREN C16A50Z4 R104, R105 Resistor, 1000 ohms Panasonic Electronic Components ERJ-8GEYJ102V U1 Hybrid Coupler CEMAX CMX09Q02 Output C201, C210 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C202 Capacitor, 10 pF ATC ATC600F100JT250T C203 Capacitor, 1.5 pF ATC ATC600F1R5CT250T C204 Capacitor, 20 pF ATC ATC100B200JT500XB C205 Capacitor, 68 pF ATC ATC600F680JT250T C206, C207, C208, C214, C215 Capacitor, 10 µF , 50V Taiyo Yuden UMK325C7106MM-T C209, C216, C217, C218 Capacitor, 10 µF , 100V TDK Corporation C5750X7S2A106M230KB C211 Capacitor, 47 pF ATC ATC100B470JT500XB C212 Capacitor, 12 pF ATC ATC600F120JT250T C213 Capacitor, 47 pF ATC ATC600F470JT250T

Data Sheet 8 of 10 Rev. 03, 2017-08-21 Package Outline Specifications Package PG-HBSOF-6-2 (top view) Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 0.63ÊxÊ45 PG-HBSOF-6-2_prelim_08-30-20162ÊXÊ10 25.40 0.25 22.7ʱÊ0.15 2ÊXÊ7 0.52ÊXÊ1.00 G2 2ÊXÊ1.52 2ÊXÊ1.19 2ÊXÊ8.92 2ÊXÊ6.29 2ÊXÊ1.61 25.40 4ÊXÊ7.83 4.46 2ÊXÊ16.76 1.17 3.00 9.75 3.30Y 9.75 2ÊXÊ3.51 1.57ʱÊ0.10 5.40 VIEWÊY 2ÊXÊ0.5 21.3 23.26 24.4 0.05 3.02 2.70 0.75 7G2 G1 D2 D1 VV VV S PG-HBSOF-6-2_prelim_08-30-2016 Diagram Notes–unless otherwise specified: 1. Mold/dam bar/metal protusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar/metal protusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 – drain; G1, G2 – gate; S – source, V – VDD. Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 = drain; G1, G2 = gate; S = sourec, V1, V2 = no DC bias, NC or connect to GRD V2V1 PG-HBSOF-6-2_2017-01-112 X 10°

2 X 7°

0.63 x 45° Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source, V1, V2 = no DC bias, NC or connect to GRD V2V1 2x 7° 0.63x 45° 2x 1.00 2x 1.19 2x 8.92 2x 6.29 2x 1.61 2x 3.51 2x 16.76 2x 1.52 1.57 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source; V1 = drain video decoupling, no DC Bias, V2 = NC or connected to GRD

Data Sheet 9 of 10 Rev. 03, 2017-08-21 PTRA094808NF Package Outline Specifications Package PG-HBSOF-6-2 (bottom view) Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 2x 0.50 0.05 2.700.75 5.40 3.02 23.26 24.40 2 2 Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source, V1, V2 = no DC bias, NC or connect to GRD V2 V1 PG-HBSOF-6-2_02.1_01-17-2017 D2 D1 G2 G1 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source; V1 = drain video decoupling, no DC Bias, V2 = NC or connected to GRD

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-09-30 Advance All Data Sheet reflects advance specification for product development 02 2017-04-28 Production All Data Sheet reflects released product specification 03 2017-08-21 Production 6, 7 Updated PCB layout and components information We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2017-08-21 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2016 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 03, 2017-08-21