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Technical content

Features

  • Broadband internal input matching
  • Asymmetrical Doherty design - Main : P1dB = 190 W Typ - Peak : P1dB = 250 W Typ
  • Typical Pulsed CW performance, 875 MHz, 48 V, combined outputs - Output power at P 1dB = 208 W - Efficiency = 56% - Gain = 18.7 dB
  • Capable of handling 10:1 VSWR @48 V, 208 W (CW) output power
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 550 mA, ƒ = 875 MHz 3GPP WCDMA signal, PAR = 10.0 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF ptra094252fc_g1

Data Sheet 2 of 9 Rev. 04.2, 2017-12-08 PTRA094252FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 110 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 µA VDS = 105 V, VGS = 0 V IDSS — — 10 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.07 — W On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.06 — W Operating Gate Voltage (main) VDS = 48 V, IDQ = 550 mA VGS 3.5 3.6 3.7 V (peak) VDS = 48 V, IDQ = 0 A VGS 1.74 1.84 1.96 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 110 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (main, TCASE = 85°C, 105 W 1C WCDMA) RqJC 0.45 °C/W (peak, TCASE = 85°C, 105 W 1C WCDMA) RqJC 0.12 °C/W 1. Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. 2. Parameters values can be affected by end application and product usage. Values may change over time.

Ordering Information

Type and Version Order Code Package Description Shipping PTRA094252FC V1 R0 PTRA094252FCV1R0XTMA1 H-37248-4, earless flange Tape & Reel, 50 pcs PTRA094252FC V1 R2 PTRA094252FCV1R2XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 9 Rev. 04.2, 2017-12-08 Typical Performance (data taken in a production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 550 mA, ƒ = 875 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Eff ptra094252fc_g2 -25 -20 -15 -10 -40 -35 -30 -25 -20 750 800 850 900 950 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 550 mA, POUT = 49.49 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL ptra094252fc_g4 750 800 850 900 950 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 550 mA, POUT = 49.49 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain ptra094252fc_g3 -45 -40 -35 -30 -25 -20 -15 825 850 875 900 925 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ(M) = 550 mA, VGS(PK) = VGS at IDQ = 770mA-1.7 V IRL Gain ptra094252fc_g5

Data Sheet 4 of 9 Rev. 04.2, 2017-12-08 PTRA094252FC Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, 48 V, IDQ = 389 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, 48 V, IDQ = 516 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%]

Data Sheet 5 of 9 Rev. 04.2, 2017-12-08 Reference Circuit, 860 - 880 MHz Reference circuit assembly diagram (not to scale) R101 C101 C104 C105 C109 C107 C102 R102 C103 C106 R103 C108 C220 C216 C221 C208 C218 C202 C207 C206 C215 C217 C219 C211 C212 C209 C210 C214 C205 C203 C204 C201 C213 PTRA094252FC_OUT_01PTRA094252FC_IN_01A RO4360,

20 MIL

(194) RO4360, 20 MIL (194) C222 C223 RF OUTRF IN VGS(MAIN) VGS(PEAK) VDD VDD

Data Sheet 6 of 9 Rev. 04.2, 2017-12-08 PTRA094252FC Reference Circuit (cont.) Reference Circuit Assembly DUT PTRA094252FC V1 Test Fixture Part No. LTA/PTRA094252FC V1 PCB Rogers 4360, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 860 – 880 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N Input C101, C105, C107, C108 Capacitor, 43 pF ATC ATC600F430FW250T C102, C109 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C103 Capacitor, 4.3 pF ATC ATC600F4R3AW250T C104 Capacitor, 1 pF ATC ATC600F1R0AW250T C106 Capacitor, 4.7 pF ATC ATC600F4R7AW250T R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-3GEYJ100V R103 Resistor, 50 ohms Richardson C16A50Z4 U1 Hybrid coupler Anaren X3C09P1-04S Output C201, C216, C221 Capacitor, 43 pF ATC ATC600F430FW250T C202, C203, C204, C205, C206, C207, C208, C209, C210, C211, C212, C213 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C214 Capacitor, 3.3 pF ATC ATC600F3R3AW250T C215 Capacitor, 5.1 pF ATC ATC600F5R1AW250T C217, C218 Capacitor, 12 pF ATC ATC600F120FW250T C219 Capacitor, 6.8 pF ATC ATC600F6R8BW250T C220 Capacitor, 0.6 pF ATC ATC600F0R6AW250T C222, C223 Capacitor, 470 µF Cornell Dubilier Electronics (CDE) SEK471M050ST

Data Sheet 7 of 9 Rev. 04.2, 2017-12-08 Pinout Diagram (top view) Lead connections for PTRA094252FC Pin Description D1 Drain device 1 (Main) D2 Drain device 2 (Peak) G1 Gate device 1 (Main) G2 Gate device 2 (Peak) S Source (flange) S D1 D2 G1 G2 Main Peak

Data Sheet 8 of 9 Rev. 04.2, 2017-12-08 PTRA094252FC Package Outline Specifications Package H-37248-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

Data Sheet 9 of 9 Rev. 04.2, 2017-12-08 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2017-12-08 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2016 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTRA094252FC V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2015-07-09 Advance All Data Sheet reflects advance specification for product development 01.1 2015-12-13 Advance 2 Updated Maximum Ranging 02 2016-04-04 Production All All Data Sheet reflects released product specification Revised all data and includes updated final specs, typical performance graphs, loadpull, refer- ence circuit, package outline 03 2016-06-02 Production 1, 3 5, 6 Revised graphs to 875Mhz Revised reference circuit and component list 04 2016-10-18 Production 1 Revised P1dB for main & peak and HBM classification 04.1 2017-02-01 Production 2 Updated operating voltage and junction temperature 04.2 2017-12-08 Production 2 Updated drain-source breakdown voltage and drain-source voltage. Adding notes to max ratings table