DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
Input matched Asymmetric Doherty design - Main: P1dB = 150 W Typ - Peak: P1dB = 175 W Typ Typical Pulsed CW performance, 746–768 MHz,
48 V, combined outputs
- Output power at P1dB = 200 W - Effi ciency = 54% - Gain = 16.5 dB Capable of handling 10:1 VSWR @48 V, 79 W (CW) output power Integrated ESD protection Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001) Low thermal resistance Pb-free and RoHS-compliant
Description
The PTRA093302FC is a 330-watt LDMOS FET with an asym- metric design intended for use in multi-standard cellular power amplifi er applications in the 746 MHz to 768 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless fl ange. Manufactured with Infi neon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon Doherty production test fixture) VDD = 48 V, IDQ = 400 mA, POUT = 79 W avg, VGS(peak) = (VGS @IDQ = 400 mA) – 3.0 V, ƒ = 768 MHz. 3GPP WCDMA signal: peak/average = 10 dB @ 0.01% CCDF , channel bandwidth = 3.84 MHz. Characteristic Symbol Min Typ Max Unit Gain Gps 16.0 17.25 — dB Drain Effi ciency D 47.0 51.6 — % Adjacent Channel Power Ratio ACPR — –32.5 –30.0 dBc -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 400 mA, ƒ = 768 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF ptra093302dc_g1
Confidential, Limited Internal Distribution Data Sheet 2 of 8 Rev. 03, 2016-03-16 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V( BR)DSS 105 — — V Drain Leakage Current V DS = 50 V, VGS = 0 V IDSS — — 1 µA V DS = 105 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current V GS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (main) V GS = 10 V, VDS = 0.1 V R DS(on) — 0.4 — (peak) V GS = 10 V, VDS = 0.1 V R DS(on) — 0.3 — Operating Gate Voltage (main) V DS = 50 V, IDQ = 400 mA V GS 3.1 3.56 4.0 V (peak) V DS = 50 V, IDQ = 0 mA VGS 0.2 0.58 1.0 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature T J 200 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (main, TCASE = 70°C, 79 W CW) RJC 0.56 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping PTRA093302FC V1 R0 PTRA093302FCV1R0XTMA1 H-37248-4, earless flange Tape & Reel, 50 pcs PTRA093302FC V1 R2 PTRA093302FCV1R2XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs
Data Sheet 3 of 8 Rev. 03, 2016-03-16 PTRA093302FC Confidential, Limited Internal Distribution Typical RF Performance (data taken in production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 400 mA, ƒ = 768 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz 768MHz ACPU 768MHz ACPL 768MHz Eff ptra093302dc_g2 650 700 750 800 850 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 400 mA, POUT = 48.98 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain ptra093302dc_g3 -40 -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 650 700 750 800 850 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 400 mA, POUT = 48.98 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL ptra093302dc_g4 0 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ = 400mA 746MHz Gain 755MHz Gain 768Mhz Gain 746MHz Eff 755MHz Eff 768MHz Eff ptra093302dc_g5
Confidential, Limited Internal Distribution Data Sheet 4 of 8 Rev. 03, 2016-03-16 Typical RF Performance (cont.) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 300 mA, class AB P1dB Max Output Power Max PAE Freq [MHz] Zs [] Zl [] Gain [dB] POUT [dBm] POUT [W] [%] Zl [] Gain [dB] POUT [dBm] POUT [W] [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, VGS(PEAK) = 2.1 V, class C P1dB Max Output Power Max PAE Freq [MHz] Zs [] Zl [] Gain [dB] POUT [dBm] POUT [W] [%] Zl [] Gain [dB] POUT [dBm] POUT [W] [%] -20 -15 -10 700 725 750 775 800 825 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ = 400 mA IRL Gain ptra093302dc_g7 0 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 400 mA, ƒ = 768 MHz 44V Gain 48V Gain 52V Gain 44V Eff 48V Eff 52V Eff ptra093302dc_g6
Data Sheet 5 of 8 Rev. 03, 2016-03-16 PTRA093302FC Confidential, Limited Internal Distribution Reference Circuit, 746 – 768 MHz Reference circuit assembly diagram (not to scale) Reference Circuit Assembly DUT PTRA093302FC V1 Test Fixture Part No. LTA/PTRA093302FC V1 PCB Rogers 4360, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 6.15, ƒ = 746 – 768 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower C201 C217 C202 C209 C215 C203 C212 C204 C213 C210 C211 C216 C218 C207 C205 C208 C110 C101 R103 C102 C106 R101 C105 C109C107 C103 C104 C108 R102 PTRA093302FC_IN_01 RF_IN RF_OUT VDD VDD ptra 09 33 02 fc_CD_03-1 6-20 16 RO4360, 20MIL (194) PTRA093302FC_OUT_01 RO4360, 20MIL (194) VGS(PEAK) VGS(MAIN) C214 C206
Confidential, Limited Internal Distribution Data Sheet 6 of 8 Rev. 03, 2016-03-16 Reference Circuit (cont.) Pinout Diagram (top view) Lead connections for PTRA093302FC Components Information for circuit assembly Component Description Manufacturer P/N Input C101, C102, C104 Capacitor, 6.8 pF ATC ATC100A6R8CW150XB C103, C106, C107, C108 Capacitor, 68 pF ATC ATC100A680JW150XB C105 Capacitor, 3.9 pF ATC ATC800A3R9CW250T C109, C110 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102 Resistor, 10 Panasonic Electronic Components ERJ-3GEYJ100V R103 Resistor, 50 Richardson C16A50Z4 U1 Hybrid Coupler Anaren X3C07P1-05S Output C201 Capacitor, 9.1 pF ATC ATC100B9R1CW500XB C202, C209, C210 Capacitor, 6.8 pF ATC ATC100A6R8CW150XB C203, C204, C212, C213 Capacitor, 68 pF ATC ATC100A680JW150XB C205, C215 Capacitor, 56 pF ATC ATC100A560JW150XB C206, C214 Capacitor, 470 µF Cornell Dubilier Electronics (CDE) SEK471M050ST C207, C208, C216, C217 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C211 Capacitor, 1.1 pF ATC ATC800A1R1CW250T C218 Capacitor, 0.5 pF ATC ATC100A0R5CW150XB Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1 (Main) G2 Gate Device 2 (Peak) S Source (flange) S D1 D2 G1 G2 MainPeakMain Peak
Data Sheet 7 of 8 Rev. 03, 2016-03-16 PTRA093302FC Confidential, Limited Internal Distribution Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. >@ /,' )/$1*( >@ 63+ @' ' * * >@6 ;; >;@ >@ +BSRBB @ $
Confidential, Limited Internal Distribution
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-06-19 Advance All Data Sheet refl ects advance specifi cation for product development 02 2015-10-29 Preliminary All Data Sheet refl ects preliminary specifi cation 03 2016-03-16 Production 5-6 Add reference circuit infomation, fi rm specifi cations. Product released to production. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 Inter national Edition 2016-03-16 Published by Infi neon Technologies AG
85579 Neubiberg, Germany
© 2014 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce (www.infineon.com/rfpower). W arnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 03, 2016-03-16