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  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

  • Broadband internal input and output matching
  • Asymmetric design - Main: P1dB = 245 W Typ - Peak: P1dB = 380 W Typ
  • Typical pulsed CW performance, 805 MHz, 48 V, Doherty configuration - Output power at P 3dB = 650 W - Efficiency = 52% - Gain = 19.5 dB
  • Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power
  • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Integrated ESD protection
  • Low thermal resistance
  • RoHS-compliant

Description

The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 48 V, IDQ = 510 mA, POUT = 107 W avg, VGS(PEAK) = 2.4 V, ƒ = 805 MHz, 3GPP , channel bandwidth = 3.84 MHz, peak/ average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 17.5 18.5 — dB Drain Efficiency hD 48.5 52 — % Adjacent Channel Power Ratio ACPR — –31 –28 dBc Output PAR @ 0.01% CCDF OPAR 6.7 –7.2 — dB PTRA087008NB PTRA087008NB -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V, ƒ = 805 MHz. 3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

PAR @ 0.01% CCDF ra087008nb-gr1a

Rev. 03.1, 2018-07-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 48 V, VGS = 0 V IDSS — — 1 µA VDS = 105 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (Main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.07 — W (Peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage (Main) VDS = 48 V, IDQ = 0.2 A VGS 3.0 3.5 4.0 V (Peak) VDS = 48 V, IDQ = 0 A VGS — 2.4 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Chracteristics VDD = 48 V, IDQ = 500 mA, 780 MHz Parameter Symbol Value Unit Thermal Resistance (Main) TCASE = 70°C, POUT = 107 W CW RqJC 0.70 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PTRA087008NB V1 R2 PTRA087008NB-V1-R2 PG-HB2SOF-6-1, overmold Tape & Reel, 250 pcs

Rev. 03.1, 2018-07-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V, ƒ = 780 MHz. 3GPP WCDMA signal, 10 dB PAR, PAR @ 0.01% CCDF ra087008nb-gr1b -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up, Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 50 V, IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V, ƒ = 805 MHz, 3GPP WCDMA signal, 10 dB PAR, -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up, Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V, ƒ = 780 MHz, 3GPP WCDMA signal, 10 dB PAR, Typical Performance (data taken in a production test fixture) 650 700 750 800 850 900 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 48 V, IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V, POUT = 50.3 dBm, 3GPP WCDMA signal, 10 dB PAR,

Rev. 03.1, 2018-07-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com -30 -25 -20 -15 -10 -35 -30 -25 -20 -15 650 700 750 800 850 900 Return Loss (dB) ACP Low, ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 48 V, IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V, POUT = 50.3 dBm, 3GPP WCDMA signal, 10 dB PAR, Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V

805 MHz

758 MHz

780 MHz

Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V, ƒ = 805 MHz 44V 48 V 52 V Gain Efficiency ra087008nb-gr6a 29 34 39 44 49 54 59 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V, ƒ = 780 MHz 44 V 48 V 52 V Gain Efficiency ra087008nb-gr6b Typical Performance (cont.)

Rev. 03.1, 2018-07-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com -26 -24 -22 -20 -18 -16 -14 -12 -10 700 750 800 850 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal VDD = 48 V, IDQ(MAIN) = 510 mA, VGSPEAK = 2.4 V Gain PAR @ 0.01% CCDF ra087008nb-gr7 Typical Performance (cont.) See Load Pull Performance, next page

Rev. 03.1, 2018-07-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Load Pull Performance Main side Pulsed CW signal: 10 µsec, 10% duty cycle, VDD = 48 V, IDQ = 510 mA, class AB P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Peak side Pulsed CW signal: 10 µsec, 10% duty cycle, V DD = 48 V, VGS(PEAK) = 2.4 V, class B P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%]

Rev. 03.1, 2018-07-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Reference Circuit, tuned for 755 to 805 MHz Reference Circuit Assembly DUT PTRA087008NB V1 Reference Circuit Part No. LTN/PTRA087008NB V1 PCB Rogers 4360, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Reference circuit assembly diagram (not to scale) RF_IN RF_OUT C202 C209 C206C204 C203 C205 C207 C208 C214 C216 C218 C219 C215 C217 C226 C221 C222 C223C220 C224 C225 C212 C211 C201 C213 C210 PTRA087008NB_OUT_07 RO4350, 20 MIL Main Peak C113 C108 C101 R103 C102 R104 C104 C105 C106 C111 C109 C112 C107 R101 R102 C110 C103 PTRA087008NB_IN_07 Peak RO4350, 20 MIL Main p t r a 0 8 7 0 0 8 n b _ C D _ 0 5 - 0 9 - 1 9 _ b n VGG VGG VDD VDD

Rev. 03.1, 2018-07-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Components Information Component Description Manufacturer P/N Input C101, C105,C107, C113 Capacitor, 43 pF ATC ATC600F430JW250T C102, C108 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C103 Capacitor, 6.8 pF ATC ATC600F6R8JW250T C104 Capacitor, 7.5 pF ATC ATC600F7R5JW250T C106 Capacitor, 3.0 pF ATC ATC600F3R0CT250T C109, C111, C112 Capacitor, 2.0 pF ATC ATC600F2R0CW250T C110 Capacitor, 9.1 pF ATC ATC600F9R1JW250T R101, R102 Resistor, 6.2 ohms Panasonic P6.2ECT -ND R103 Resistor, 5.1 ohms Panasonic P5.1ETR-ND R104 Resistor, 50 ohms Anaren C8A50Z4A U1 Hybrid coupler Anaren X3C09P1-03S Output C201, C210, C211, C212, C221, C224, C225, C226 Capacitor, 10 µF , 100 V TDK Corporation C5750X7S2A106M230KB C202 Capacitor, 9.1 pF ATC ATC600F9R1JW250T C203 Capacitor, 8.2 pF ATC ATC600F8R2JW250T C204 Capacitor, 3.0 pF ATC ATC600F3R0CW250T C205 Capacitor, 2.2 pF ATC ATC600F2R2CW250T C206, C207 Capacitor, 0.6 pF ATC ATC600F0R6CW250T C208, C214, C215 Capacitor, 10 pF ATC ATC600F100JW250T C209, C218, C219, C220 Capacitor, 43 pF ATC ATC600F430JW250T C213, C222, C223 Capacitor, 100 µF , 63 V Panasonic EEE-FK1J101P C216, C217 Capacitor, 6.2 pF ATC ATC600F6R2JW250T Reference Circuit (cont.) Pinout Diagram (top view) Lead connections for PTRA087008NB D1 D2 G2G1 P G - H B 2 S O F - 6 - 1 _ P D _ 0 9 - 2 1 - 2 0 1 6 S = flange Pin Description D1 Drain device 1 (Main) D2 Drain device 2 (Peak) G1 Gate device 1 (Main) G2 Gate device 2 (Peak) S Source (flange) V1, V2 Drain video decoupling, no DC Bias V1 V2Main Peak

Rev. 03.1, 2018-07-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Package Outline Specifications 32.26 2x 14.12 2x 10.62x 1.02 2.83 7.064x 11.29 2x 4.44 1.57 9.96 9.96 19.46 3.30 0.25 3.81 32.26 5 2x 4.75 2x 1.00 2.03 7.19 2x 0.63x 45° 10° 2x 0.50 0.05 8.46 4.23 31.26 3.51 D1 D2 G1 G2 D2 D1 G2 G1 V V V V PG-HB2SOF-6-1_prelim_02-09-2017 PG-HB2SOF-6-1_prelim_02-09-2017 Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Fillets and radii: all radii are 0.3 mm max. 3. Interpret dimensions and tolerances per ISO 8015. 4. Dimensions are mm. 5. Does not include mold/dam bar and metal protrusion. 6. All tolerances ± 0.1 mm unless specified otherwise. 7. All metal surfaces tin pre-plated, except area of cut. 8. Lead thickness: 0.25 mm. 9. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V – drain video decoupling, no DC bias

Rev. 03.1, 2018-07-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Package Outline Specifications Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Fillets and radii: all radii are 0.3 mm max. 3. Interpret dimensions and tolerances per ISO 8015. 4. Dimensions are mm. 5. Does not include mold/dam bar and metal protrusion. 6. All tolerances ± 0.1 mm unless specified otherwise. 7. All metal surfaces tin pre-plated, except area of cut. 8. Lead thickness: 0.25 mm. 9. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V – drain video decoupling, no DC bias 32.26 2x 14.12 2x 10.62x 1.02 2.83 7.064x 11.29 2x 4.44 1.57 9.96 9.96 19.46 3.30 0.25 3.81 32.26 5 2x 4.75 2x 1.00 2.03 7.19 2x 0.63x 45° 10° 2x 0.50 0.05 8.46 4.23 31.26 3.51 D1 D2 G1 G2 D2 D1 G2 G1 V V V V PG-HB2SOF-6-1_prelim_02-09-2017 PG-HB2SOF-6-1_prelim_02-09-2017

Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Rev. 03.1, 2018-07-12 www.wolfspeed.com For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816

Revision History

Type Page Subjects (major changes at each revision) 01 2016-07-14 Advance All Data Sheet reflects advance specification for product development 01.1 2017-08-15 Advance 1, 2 Updated features, RF Characteristics, Max Ratings table and Pinout Diagram 02 2018-06-20 Preliminary All Update specifications tables (pg 1-2), and graphs. 03 2018-06-26 Production All Final specifications for Production-released product, including updates to Thermal Characteristics table (p1) and circuit BOM (p8). 03.1 2018-07-12 Production 1 Revised title to 650W, removed R0 ordering information