PTRA083818NF

PTRA083818NF CREE | Alldatasheet

Document overview

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Technical content

All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-20 PTRA083818NF Package PG-HBSOF-6-2 Thermally-Enhanced High Power RF LDMOS FET

275 W, 48 V, 733 – 805 MHz Features

• Broadband internal input matching
• Asymmetrical Doherty design - Main : P 1dB = 165 W Typ - Peak : P1dB = 250 W Typ
• Typical Pulsed CW performance, 805 MHz, 48 V, combined outputs - Output power at P 1dB = 275 W - Efficiency = 59.6% - Gain = 18.6 dB
• Capable of handling 10:1 VSWR @ 48 V, 81.3 W CW output power
• Integrated ESD protection
• Human Body Model class 1C (per ANSI/ESDA/ JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

Description

The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excel- lent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture) VDD = 48 V, IDQ = 200 mA, VGS(PEAK) = 2.0 V, POUT = 81.3 W avg, ƒ = 805 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 17.2 18 — dB Drain Efficiency hD 53 56 — % Adjacent Channel Power Ratio ACPR — –27.3 –24 dBc Output PAR @ 0.01% CCDF OPAR 5.5 6.3 — dB -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = 2.0 V, ƒ = 805 MHz, 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF ptra083818nf_g1 PTRA083818NF

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-20 2PTRA083818NF DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 48 V, VGS = 0 V IDSS — — 1 µA VDS = 105 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (Main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.12 — W On-State Resistance (Peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.08 — W Operating Gate Voltage (Main) VDS = 48 V, IDQ = 0.20 A VGS 3 3.5 4 V Operating Gate Voltage (Peak) VDS = 48 V, IDQ = 0 mA VGS — 2 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (Main, TCASE = 70°C, 81.3 W CW) RqJC 0.53 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTRA083818NF V1 R5 PTRA083818NF-V1-R5 PG-HBSOF-6-2 Tape & Reel, 500

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-20 3PTRA083818NF Typical RF Performance (data taken in production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = 2.0 V, ƒ = 805 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency ptra083818nf_g2 -30 -25 -20 -15 -10 -35 -30 -25 -20 -15 -10 675 725 775 825 875 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = 2.0 V, POUT = 49.1 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL ptra083818nf_g4 675 725 775 825 875 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = 2.0 V, POUT = 49.1 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain ptra083818nf_g3 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = 2.0 V ptra083818nf_g5 755MHz 780MHz 805MHz Gain Efficiency

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-20 4PTRA083818NF Typical RF Performance (cont.) 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ(MAIN) = 200 mA, VGS(PEAK) = 2.0 V, ƒ = 805 MHz 44V 48V 52V ptra083818nfv_g6 Gain Efficiency -14 -13 -12 -11 -10 700 750 800 850 900 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = 2.0 V IRL Gain ptra083818nf_g7

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-20 5PTRA083818NF Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 350 mA, class AB P1dB Max Output Power Main Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Main Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, VGS(PEAK) = 2.2 V, class C P1dB Max Output Power Main Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Main Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%]

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-20 6PTRA083818NF Reference Circuit, 733 – 805 MHz Reference circuit assembly diagram (not to scale) C218 C217 C216 C214 C215 C211 C210 C212 C213 C201 C208C202 C207 C203 C209 C204 C205 C101 C112 C110 C109 R103 C108 C107 R102 C111 C106 C102 R101 C103 C105 C104 PTRA083818NF_IN_02 RO4360, 24 MIL RO4360, 24 MIL PTRA083818NF_OUT_02 (285) (285) VDD VDDVGS(PEAK) RF_IN RF_OUT VGS(MAIN) C206 C220 C219 C221 C222 PTRA08 381 8NF_CD_06-18-20 18

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-20 7PTRA083818NF Reference Circuit (cont.) Reference Circuit Assembly DUT PTRA083818NF V1 Test Fixture Part No. LTA/PTRA083818NF V1 PCB Rogers 4360, 0.609 mm [0.024”] thick, 2 oz. copper, εr = 6.4, ƒ = 733 – 805 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF Pinout Diagram Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1 (Main) G2 Gate Device 2 (Peak) S Source (flange) V1 Drain video decoupling, no DC bias V2 NC or connected to GRD G1 G2 D2D1 Main PeakV1 V2 Components Information Component Description Manufacturer P/N Input C101 Capacitor, 10 pF ATC ATC800A100JT250T C102 Capacitor, 5.6 pF ATC ATC800A5R6CT250T C103, C104, C108, C110 Capacitor, 82 pF ATC ATC800A820JT250T C105, C106, C111, C112 Capacitor, 2.2 µF TDK Corporation C4532X7R1H225M160KA C107 Capacitor, 20 pF ATC ATC800A200JT250T C109 Capacitor, 9.1 pF ATC ATC100B9R1CW500XB R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-3GEYJ100V R103 Resistor, 50 ohms Richardson C8A50Z4A U1 Hybrid Coupler Anaren X3C07P1-05S Output C201, C222 Capacitor, 2.2 µF TDK Corporation C4532X7R1H225M160KA C202 Capacitor, 2.7 pF ATC ATC800A2R7CT250T C203, C214 Capacitor, 82 pF ATC ATC800A820JT250T C204, C206, C215, C216, C217, C219, C220, C221 Capacitor, 10 µF TDK Corporation C5750X7S2A106M230KB C205, C218 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C207, C210 Capacitor, 3.9 pF ATC ATC800A3R9CT250T C208 Capacitor, 12 pF ATC ATC100B120JW500XB C209 Capacitor, 5.6 pF ATC ATC800A5R6CT250T C211 Capacitor, 1.2 pF ATC ATC800A1R2CT250T C212 Capacitor, 6.8 pF ATC ATC800A6R8CT250T C213 Capacitor, 100 pF ATC ATC800A101JT250T

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-20 8PTRA083818NF Package Outline Specifications Package PG-HBSOF-6-2 (top view) 0.63ÊxÊ45 PG-HBSOF-6-2_prelim_08-30-20162ÊXÊ10 25.40 0.25 22.7ʱÊ0.15 2ÊXÊ7 0.52ÊXÊ1.00 G2 2ÊXÊ1.52 2ÊXÊ1.19 2ÊXÊ8.92 2ÊXÊ6.29 2ÊXÊ1.61 25.40 4ÊXÊ7.83 4.46 2ÊXÊ16.76 1.17 3.00 9.75 3.30Y 9.75 2ÊXÊ3.51 1.57ʱÊ0.10 5.40 VIEWÊY 2ÊXÊ0.5 21.3 23.26 24.4 0.05 3.02 2.70 0.75 7G2 G1 D2 D1 VV VV S PG-HBSOF-6-2_prelim_08-30-2016 Diagram Notes–unless otherwise specified: 1. Mold/dam bar/metal protusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar/metal protusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 – drain; G1, G2 – gate; S – source, V – VDD. Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 = drain; G1, G2 = gate; S = sourec, V1, V2 = no DC bias, NC or connect to GRD V2V1 PG-HBSOF-6-2_2017-01-112 X 10°

2 X 7°

0.63 x 45° Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source, V1, V2 = no DC bias, NC or connect to GRD V2V1 2x 7° 0.63x 45° 2x 1.00 2x 1.19 2x 8.92 2x 6.29 2x 1.61 2x 3.51 2x 16.76 2x 1.52 1.57 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source; V1 = drain video decoupling, no DC Bias, V2 = NC or connected to GRD

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-20 9PTRA083818NF Package Outline Specifications (cont.) Package PG-HBSOF-6-2 (bottom view) 2x 0.50 0.05 2.700.75 5.40 3.02 23.26 24.40 2 2 Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source, V1, V2 = no DC bias, NC or connect to GRD V2 V1 PG-HBSOF-6-2_02.1_01-17-2017 D2 D1 G2 G1 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source; V1 = drain video decoupling, no DC Bias, V2 = NC or connected to GRD 2x 0.50 0.05 2.700.75 5.40 3.02 23.26 24.40 2 2 Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source, V1, V2 = no DC bias, NC or connect to GRD V2 V1 PG-HBSOF-6-2_02.1_01-17-2017 D2 D1 G2 G1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-05-04 Advance All Data Sheet reflects advance specification for product development 02 2016-08-22 Advance All Revised package (3D rendering, package number and package outline) 03 2016-09-15 Advance 1, 2 Revised RF Characteristics, DC Characteristics 04 2016-12-21 Production All Data Sheet reflects released product specification 05 2017-02-01 Production 2 8, 9 Updated Thermal Characteristics, Maximum Ratings Updated Package Outline 05.1 2017-03-30 Production 3, 4 Updated RF Characteristics table to include OPAR Fixed missing labels on CW performance graphs 06 2018-06-20 Production All Converted to Wolfspeed Data Sheet, revised reference circuit (outpu) www.wolfspeed.comRev. 06, 2018-06-20 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTRA083818NF