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Technical content

Features

 On-chip matching for broadband operation  Typical pulsed CW performance, 1990 MHz, 28 V, combined outputs - Output power at P 1dB = 20.9 W - Effi ciency = 56% - Gain = 31 dB  Capable of handling 10:1 VSWR @28 V, 20.9 W (CW) output power  Integrated ESD protection  Human Body Model Class 1A (per ANSI/ESDA/ JEDEC JS-001)  Integrated temperature compensation  Pb-free and RoHS-compliant

Description

The PTMC210204MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from

1805 MHz to 2200 MHz, and dual independent outputs with 10 W of

output power each. It is available in a 14-lead plastic overmold pack- age with gull wing leads. RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ1(A+B) = 20 mA, IDQ2(A+B) = 120 mA, POUT = 2.5 W avg, ƒ = 1990 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 28.5 30.5 33.5 dB Power Added Effi ciency PAE 17 19 — % Adjacent Channel Power Ratio ACPR — –47 –40 dBc 25 30 35 40 45 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ1 = 40 mA, IDQ2 = 240 mA, ƒ = 1930 MHz 3GPP WCDMA signal, 7.50 dB PAR, 3.84 MHz bandwidth Gain PAR @ 0.01% CCDF Efficiency c210204md-gr1a PTMC210204MD (formed leads)

Data Sheet 2 of 10 Rev. 03, 2016-06-14 DC Characteristics Stage 1 Conditions Symbol Min Typ Max Unit Drain Leakage Current VDS = 28 V, VGS = 0 V I DSS — — 0.1 µA V DS = 60 V, VGS = 0 V I DSS — — 1.0 µA Gate Leakage Current V GS = 1 V, VDS = 0 V I GSS — — 0.1 µA On-state Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 8 —  Operating Gate Voltage V DS = 28 V, IDQ1 = 20 mA V GS1 — 2.7 — V Fixture Operating Gate Voltage V DS = 28 V, IDQ1 = 20 mA V GS1 — 4.52 — V Stage 2 Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V GS = 0 V, IDS = 10 mA V BR(DSS) 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 0.1 µA V DS = 60 V, VGS = 0 V I DSS — — 1.0 µA Gate Leakage Current V GS = 1 V, VDS = 0 V I GSS — — 0.1 µA On-state Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 0.9 —  Operating Gate Voltage V DS = 28 V, IDQ2 = 120 mA V GS2 — 2.72 — V Fixture Opererating Gate Voltage V DS = 28 V, IDQ2 = 120 mA V GS2 — 4.74 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature T J 225 °C Storage Temperature Range T STG –65 to +150 °C Operating Voltage V DD 0 to 32 V Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance Stage 1 (T CASE = 70°C, 10 W CW) R JC 9.7 °C/W Stage 2 (T CASE = 70°C, 10 W CW) R JC 3.1 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit

3 IPC/JEDEC J-STD-020 260 °C

Data Sheet 3 of 10 Rev. 03, 2016-06-14 PTMC210204MD 25 30 35 40 45 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ1 = 40 mA, IDQ2 = 240 mA, ƒ = 1960 MHz 3GPP WCDMA signal, 7.50 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF c210204md-gr1b 25 30 35 40 45 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ1 = 40 mA, IDQ2 = 240 mA, ƒ = 1990 MHz 3GPP WCDMA signal, 7.50 dB PAR, 3.84 MHz bandwidth PAR @ 0.01% CCDF Efficiency Gain c210204md-gr1c

Ordering Information

Type and Version Order Code Package and Description Shipping PTMC210204MD V1 R5 PTMC210204MDV1R5XUMA1 PG-HB1DSO-14-1, 14-lead, overmold Tape & Reel, 500 pcs Evaluation Boards Order Code Frequency Description LTN/PTMC210204MD V1 1930 – 1990 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTMC210204MD E2 1805 – 1880 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTMC210204MD E3 2110 – 2200 MHz Class AB with combined outputs, R04360, 0.508 mm thick Find Gerber files for these reference fixtures on the Infineon Web site at www.infineon.com/rfpower Typical RF Performance (data taken in production test fixture)

Data Sheet 4 of 10 Rev. 03, 2016-06-14 -65 -55 -45 -35 -25 -15 25 30 35 40 45 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ1 = 40 mA, IDQ2 = 240 mA, ƒ = 1990 MHz, 3GPP WCDMA signal, 7.5 dB PAR, 3.84 MHz bandwith Efficiency ACP Low ACP Up c210204md-gr2c 3010 1820 1870 1920 1970 2020 2070 2120 Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 28 V, IDQ1 = 40 mA, IDQ2 = 240 mA, POUT = 34 dBm, 3GPP WCDMA signal, 7.5 dB PAR, 3.84 MHz BW Gain Efficiency c210204md-gr3 Typical Performance (cont.) -65 -55 -45 -35 -25 -15 25 30 35 40 45 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ1 = 40 mA, IDQ2 = 240 mA, ƒ = 1930 MHz, 3GPP WCDMA signal, 7.5 dB PAR, 3.84 MHz bandwidth Efficiency ACP Up ACP Low c210204md-gr2a -65 -55 -45 -35 -25 -15 25 30 35 40 45 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ1 = 40 mA, IDQ2 = 240 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, 7.5 dB PAR, 3.84 MHz bandwidth Efficiency ACP Low ACP Up c210204md-gr2b

Data Sheet 5 of 10 Rev. 03, 2016-06-14 PTMC210204MD -50 -40 -30 -20 -10 -55 -50 -45 -40 -35 1820 1870 1920 1970 2020 2070 2120 Return Loss (dB) ACP (dBc) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 28 V, IDQ1 = 40 mA, IDQ2 = 240 mA, POUT = 34 dBm, 3GPP WCDMA signal, 7.5 dB PAR ACP Up Input Return Loss c210204md-gr4 25 30 35 40 45 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ1 = 40 mA, IDQ2 = 240 mA Gain Efficiency c210204md-gr5

1930 MHz

1960 MHz

1990 MHz

Typical Performance (cont.) -40 -30 -20 -10 1850 1900 1950 2000 2050 2100 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW VDD = 28 V, IDQ1 = 40 mA, IDQ2 = 240 mA Gain Input Return Loss c210204md-gr7

Data Sheet 6 of 10 Rev. 03, 2016-06-14 Load Pull CW signal: VDD1 = VDD2 = 28 V, IDQ1 = 20 mA, IDQ2 = 120 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [Ω] Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Reference Circuit, tuned for 1930 – 1990 MHz DUT PTMC210204MD V1 Test Fixture Part No. LTN/PTMC210204MD V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower Ref erence circuit assembly diagram (not to scale) ptmc210204md_CD_02_4-29-2016 RO4350, .20 MIL, 2 OZ PTMC210204MD_02 R105 R109 C113 C114 C103 C104 R101 C102 R106 C111 R102 C112 R111 R110 C207 C206 U1 C109 C110 C106 C101 C105 R103 RF_OUTRF_IN C205 C204 C208 R201 C201 C203 C202 R104 R108 C108 C107 VG2B VG1B VD1B VD2B R107 VD1A VG2A VG1A VD2A

Data Sheet 7 of 10 Rev. 03, 2016-06-14 PTMC210204MD Component Information Component Description Manufacturer P/N Input C101, C103, C105, C107, C111, C113, C203, C207 Capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88L C102, C104, C106, C108, C112, C114, C202, C206 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C109, C110 Capacitor, 0.8 pF ATC ATC800A0R8CT250T C201, C204, C205, C208 Capacitor, 10 pF ATC ATC800A100JT250T R101, R103 Resistor, 0.0 ohms Panasonic Electronic Components ERJ-3GEY0R00V R102, R201 Resistor, 50 ohms Anaren C8A50Z4A R104, R105, R106, R107 Resistor, 1K ohms Panasonic Electronic Components ERJ-8GEYJ102V R108, R109, R110, R111 Resistor, 4.3K ohms Panasonic Electronic Components ERJ-8GEYJ432V U1, U2 Hybrid Coupler Anaren X3C19P1-03S Reference Circuit (cont.) Pinout Diagram VD2/RFOUT B VD1 A VG2 A VG1 A RFIN A N/C N/C N/C N/C RFIN B VG1 B VG2 B VD1B VD2/RFOUT A ptmc210204md_PD_5-2-2016 Source: plated copper heat slug on back- side of package VD2/RFOUT A VD2/RFOUT B RFIN A RFIN B

Data Sheet 8 of 10 Rev. 03, 2016-06-14 4X 1.02 9.02

0.52 X 45°

2X 5.30 7.65 2.35 3.83 2X 2.02 2X 0.35 1.50 2X 3.25 11X 1.00 13.06 4.00 2.62 0.10 MAX. 1.27 1.86 Z Y 12X 0.35 14.94 ± 0.15

4 X 7°

2 X 10°

19.44 PG-HB1DSO-14L_01_11-06-2015 Z (5:1) R0.20 1.00 1.02 0.25 0.25 5°± STAND OFF 0...0.1 0° MIN. Package Outline Specifications (formed leads) Diagram Notes-unless otherwise specifi ed: 1. Mold/dam bar/metal protusions of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not ecxceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. All tolerances ± 0.1 mm. 7. All metal surfaces pre-plated, except area of cut. 8. Lead thickness: 0.25 mm. 9. Gold plating thickness: 0.25 micron [10 microinch] max.

Data Sheet 9 of 10 Rev. 03, 2016-06-14 PTMC210204MD Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 2 2 3.00 0.05 2x 0.50 6.91 3.45 16.26 18.44 Package Outline Specifications (cont.) (formed leads, bottom side) Diagram Notes-unless otherwise specifi ed: 1. Mold/dam bar/metal protusions of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not ecxceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. All tolerances ± 0.1 mm. 7. All metal surfaces pre-plated, except area of cut. 8. Lead thickness: 0.25 mm. 9. Gold plating thickness: 0.25 micron [10 microinch] max.

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 Inter national Edition 2016-06-14 Published by Infi neon Technologies AG

85579 Neubiberg, Germany

© 2015 – 2016 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce (www.infi neon.com/rfpo wer). W arnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 03, 2016-06-14 PTMC210204MD V1

Revision History

Revision Date Data Sheet Page Subjects (major changes at each revision) 01 2015-12-09 Advance All Data Sheet refl ects advance specifi cation for product development. 02 2016-05-04 Production All Product released to production: firm specifications. Add further perfor- mance information, and reference circuit. 03 2016-06-14 Production 1 Revise Description. Rearrange tables, add operating voltatage. Add ordering information for additional evaluation boards.