PTMB50B12C NIEC | Alldatasheet
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IGBT SPseries SixSixSixSix----Pack 50A 1200VPack 50A 1200VPack 50A 1200VPack 50A 1200V PTMB50B12CPTMB50B12CPTMB50B12CPTMB50B12C C I R C U I T O U T L I N E D R A W I N G MAXMUM RATINGS (Tc=25°C) Item Symbol PTMB50B12C Unit Collector-Emitter Voltage V CES 1200 V Gate - Emitter Voltage V GES +/ - 20 V DC I C 50 Collector Current 1 ms I CP 100 A Collector Power Dissipation P C 250 W Junction Temperature Range T j -40 to +150 °C Storage Temperature Range T stg -40 to +125 °C Isolation Voltage Terminal to Base AC, 1 min.) V ISO 2500 V Module Base to Heatsink 2 Mounting Torque Bus Bar to Main Terminals FTOR - N•m ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter Cut-Off Current I CES V CE=1200V,VGE=0V - - 1.0 mA Gate-Emitter Leakage Current I GES V GE=+/- 20V,VCE=0V - - 1.0 µA Collector-Emitter Saturation Voltage V CE(sat) I C=50A,VGE=15V - 1.9 2.4 V Gate-Emitter Threshold Voltage V GE(th) V CE=5V,IC=50mA 4.0 - 8.0 V Input Capacitance Cies V CE=10V,VGE=0V,f=1MHz - 4200 - pF Rise Time t r - 0.25 0.45 Turn-on Time t on - 0.40 0.70 Fall Time t f - 0.25 0.35 Switching Time Turn-off Time t off VCC= 600V RL= 12 ohm RG= 20 ohm µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Unit DC I F 50 Forward Current 1 ms I FM 100 A Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak Forward Voltage V F I F=50A,VGE=0V - 1.9 2.4 V Reverse Recovery Time t rr IF=50A,VGE=-10V,di/dt=100A/µs - 0.2 0.3 µs THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit IGBT - - 0.5 Thermal Impedance DIODE Rth(j-c) Junction to Case - - 0.1 °C/W Dimension(mm) ç Approximate Weight : 190g
Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.1- Output Characteristics (Typical) TC=25 ℃ 10V 12V 15V VGE=20V 0 4 8 12 16 200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 50A IC=25A 100A 0 4 8 12 16 200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) IC=25A 50A 100A TC=125 ℃ 0 50 100 150 200 250 300 350 100 200 300 400 500 600 700 800 Total Gate Charge Qg (nC) Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) VCE=600V 400V 200V RL=12Ω TC=25℃ 0.1 0.2 0.5 1 2 5 10 20 50 100 20020 100 200 500 1000 2000 5000 10000 20000 Collector to Emitter Voltage V CE (V) Capacitance C (pF) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Cies Coes Cres VGE=0V f=1MHZ TC=25℃ 0 1 02 03 04 05 00 0.2 0.4 0.6 0.8 1.2 1.4 Collector Current I C (A) Switching Time t (μs) Fig.6- Collector Current vs. Switching Time (Typical) tOFF tf tr tON VCC=600V RG=20Ω VGE=±15V TC=25℃
5 10 20 50 100 200 3000.05 0.1 0.2 0.5 Series Gate Impedance R G (Ω) Switching Time t (μs) Fig.7- Series Gate Impedance vs. Switching Time (Typical) VCC=600V IC=50A VGE=±15V TC=25℃ tf tr ton toff 012340 100 Forward Voltage VF (V) Forward Current I F (A) Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) TC=25℃ TC=125℃ 0 400 800 1200 16000.1 0.2 0.5 100 200 500 Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.10- Reverse Bias Safe Operating Area (Typical) RG=20Ω VGE=±15V TC≦125℃ 0 50 100 150 200 250 3001 100 200 500 -di/dt (A/μs) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) Fig.9- Reverse Recovery Characteristics (Typical) IRrM trr IF=50A TC=25 ℃ 11 0 2x10 5x10 2x10 5x10 2x10 5x10 Time t （s） Tansient Thermal Impedance Rth (J-C) (ﾟC/W) fig11-Tansient Thermal Impedance Tc=25 ℃