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Data Sheet 1 of 15 Rev. 04, 2010-04-16 All published data at T CASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! PTMA210152M Confidential, Limited Internal Distribution

Description

The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMO S integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermally-enhanced overmolded package for cool and reliable operation. PTMA210152M Package PG-DSO-20-63 Wideband RF LDMOS Integrated Power Amplifier

15 W, 1800 – 2200 MHz Features

 Designed for wide RF bandwidth and low memory effects  Broadband input on-chip matching  Typical two-carrier WCDMA performance at 2140 MHz, 28 V, 7 W avg. - Gain = 28.5 dB - Efficiency = 33 % - IMD3 = –32 dBc  Typical CW performance at 2140 MHz, 28 V - Output power at P–1dB ~ 20 W - Efficiency > 49%  Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F  Capable of handling 10:1 VSWR @ 28 V,

15 W (CW) output power

 Thermally-enhanced RoHS-compliant package *See Infineon distributor for future availability. RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDS = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, ƒ = 2110 – 2170 MHz, POUT = 7 W average Characteristic POUT Conditions Symbol Min Typ Max Unit Gain G ps — 28.5 — dB Power Added Efficiency η —3 3 — % Input Return Loss IRL — –14 — dB Adjacent Channel Power Ratio ACPR — –36 — dBc Intermodulation Distortion IMD3 — –32 — dBc table continued next page Broadband Performance VDD = 28 V, IDQ1 = 80 mA, IDQ1 = 160 mA Fixture Tuned For 2110 - 2170 MHz 1500 1700 1900 2100 2300 2500 Frequency (MHz) Gain (dB) -30 -25 -20 -15 -10 Return Loss (dB) Gain Return Loss

Data Sheet 2 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution *See Infineon distributor for future availability. RF Characteristics (cont.) Two-carrier WCDMA Measurements (cont.) VDS = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, ƒ = 2110 – 2170 MHz, POUT = 7 W average Characteristic Symbol Min Typ Max Unit Spurs Load 3:1 — — –60 — dBc Gain Flatness ΔG — 0.43 — dB Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, POUT = 15 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain G ps 27.5 28.5 30 dB Drain Efficiency ηD 33 34 — % Intermodulation Distortion IMD — –33 –30 dBc Input Return Loss — –14 –10 dB DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V (BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 1.0 µA VDS = 63 V, VGS = 0 V I DSS — — 10.0 µA On-State Resistance Stage 1 V GS = 10 V, VDS = 0.1 V R DS(on) — 0.6 — Ω Stage 2 V GS = 10 V, VDS = 0.1 V R DS(on) — 3.5 — Ω Operating Gate Voltage V DS = 28 V, IDQ = CCC mA VGS 2 2.5 3 V Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1.0 µA

Data Sheet 3 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS –0.5 to +12 V Junction Temperature T J 200 °C Input Power P IN 15 dBm Total Device Dissipation P D 70 W Above 25°C derate by 0.4 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 15 W CW) Stage 1 R θJC 10.7 °C/W Stage 2 R θJC 2.9 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit

3 IPC/JEDEC J-STD-020 260 °C

Ordering Information

Type and Version Package Outline Package Description Shipping PTMA210152M V1 PG-DSO-20-63 Thermally-enhanced surface-mount Tape

Data Sheet 4 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution *See Infineon distributor for future availability. CW Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA For 2110, 2140, 2170 MHz 29 31 33 35 37 39 41 43 45 Output Power (dBm) Gain (dB) Gain Efficiency

2110 MHz

2140 MHz

2170 MHz

Power Added Efficiency (%) CW Performance VDD1 = 28 V, VDD2 = 32, 28, 24 V, IDQ1 = 80 mA, IDQ2 = 160 mA, ƒ = 2140 MHz 29 31 33 35 37 39 41 43 45 Output Power (dBm) Gain (dB) Gain 24 V 28 V 32 V WCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz 30 32 34 36 38 40 Output Power (dBm) -60 -55 -50 -45 -40 -35 -30 -25 ACPR (dBc) Efficiency ACPR Power Added Efficiency (%) VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA For 2110, 2140, 2170 MHz 30 32 34 36 38 40 42 44 Output Power, avg. ( dBm ) -75 -65 -55 -45 -35 -25 -15 IMD3 (dBc) Efficiency IMD3 Power Added Efficiency (%) Typical Performance at 2140 MHz (data taken in a production test fixture)

Data Sheet 5 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Two-carrier WCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz 30 32 34 36 38 40 42 Output Power (dBm) -60 -55 -50 -45 -40 -35 -30 -25 IMD3 (dBc) Efficiency IMD3 Power Added Efficiency (%) Typical Performance at 2140 MHz (cont.) Two-carrier WCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2140 MHz at various temperatures 30 32 34 36 38 40 42 Output Power (dBm) -60 -55 -50 -45 -40 -35 -30 -25 ACPR (dBc) Efficiency ACPR Power Added Efficiency (%) –25 °C 25 °C 90 °C Six-carrier TD-SCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz 30 32 34 36 38 40 42 Output Power (dBm) -60 -55 -50 -45 -40 -35 -30 -25 Efficiency ACPR Power Added Efficiency (%) ACPR (dBc) Two-carrier WCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz 30 32 34 36 38 40 42 Output Power (dBm) -60 -55 -50 -45 -40 -35 -30 -25 ACPR (dBc) Efficiency ACPR Power Added Efficiency (%)

Data Sheet 6 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Gate - Source Voltage vs . Temperature VDD = 28, IDQ1 = 80 mA, IDQ2 = 160 mA 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -30 -10 10 30 50 70 90 Temperature (ºC) VG1 VG2 Normalized Gate - Source Voltage Typical Performance at 2140 MHz (cont.) Broadband Circuit Impedance, 2140 MHz Z LoadD S IN 0.1 0.3 0.2 0.1 0.1 0.2 - W AVELENGTHS TOW AR <--- W AVELENGTHS TOW ARD LOAD - 0.0 Z0 = 50 Ω Frequency Z Load W MHz R jX 2110 1.89 –5.84 2114 1.87 –5.80 2118 1.85 –5.76 2122 1.84 –5.72 2126 1.82 –5.67 2130 1.80 –5.63 2134 1.78 –5.60 2138 1.77 –5.55 2142 1.75 –5.51 2146 1.73 –5.47 2150 1.71 –5.42 2154 1.70 –5.38 2158 1.68 –5.34 2162 1.66 –5.30 2166 1.65 –5.25 2170 1.63 –5.21

Data Sheet 7 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Reference Circuit, 2140 MHz Reference circuit schematic for ƒ = 2140 MHz Circuit Assembly Information DUT PTMA210152M LDMOS IC PCB LTN/PTMA210152M 0.76 mm [.030"] thick, εr = 3.43 Rogers RO4350 1 oz. copper Microstrip Electrical Characteristics at 2140 MHz Dimensions: L x W (mm) Dimensions: L x W (in.) a210152 m _bd_7- 23- 09 J2J1 C18 10μF C16 0.1μF C15 12 pF C1 7 1μF C1 9 100μF 50 V VD2 C22 12 pF 7 8 9 PTM A210152M51 6 DUT C1 4 12 pF C10 12 pF C12 1μF 1μF 10μF C11 10μF 0.1μF C13 0.1μF V 100μF 50 V 10μF 1μF 0.5 pF 0.1μF 12 pF VG1 G2V C2 0 2. 2pF C21 1. 0pF 5 6

Data Sheet 8 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Reference Circuit, 2140 MHz (cont.) a210152 m_c d _ 7-23 - 09 RF_IN RF_OUT VD1 VG2 C10 C14 C17 C18 C22 R1 Q2 C21 C20 C11 C12 C13 C15 C16 VG1 VD2 C19 PTMA210152 M Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C3, C8, C12, C17 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND C4, C9, C13, C16 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C2, C7, C11, C18 Tantalum capacitor, 10 µF, 50 V Digi-Key P5571-ND C1, C19 Electrolytic capacitor, 100 µF, 50 V Digi-Key PCE3718CT-ND C6 Ceramic capacitor, 0.5 pF ATC 600S 0R5 CT C20 Ceramic capacitor, 2.2 pF ATC 600S 2R2 CT C21 Ceramic capacitor, 1.0 pF ATC 600S 1R0 CT C5, C10, C14, Ceramic capacitor, 12 pF ATC 600S 120 JT C15, C22 Q1, Q2 Transistor Infineon Technologies BCP56 R1, R2 Chip resistor, 0 ohms Digi-Key P00ECT-ND R3, R4 Potentiometer, 2 k ohms Digi-Key 3224W-202ETR-ND *Gerber Files for this circuit available on request

Data Sheet 9 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution CW Performance VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA ƒ = 1805, 1830, 1880 MHz 29 31 33 35 37 39 41 43 45 Output Power (dBm) Gain (dB) Gain Efficiency

1805 MHz

1830 MHz

1880 MHz

Power Added Efficiency (%) Two-tone Drive-up VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA ƒ = 1805, 1830, 1880 MHz 29 31 33 35 37 39 41 43 Output Power, avg. (dBm) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 IMD3 (dBc) Efficiency IMD3 Power Added Efficiency (%) Edge Modulation Spectrum Performance VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 160 mA, series are at selected frequencies 30 31 32 33 34 35 36 37 38 39 40 41 42 Output Power (dBm) -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 Modulation Spectrum (dBc) Efficiency 400 kHz 600 kHz Power Added Efficiency (%)

1805.2 MHz

1836.6 MHz

1879.8 MHz

VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 160 mA, series are at selected frequencies 30 31 32 33 34 35 36 37 38 39 40 41 42 Output Power (dBm) Error Vector Magnitude (%) EVM Efficiency Power Added Efficiency (%) Typical Performance, 1840 MHz (data taken in Infineon test fixture)

Data Sheet 10 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Broadband Circuit Impedance, 1840 MHz Z LoadD S IN 0.1 0.3 0.5 0.2 0.4 0.1 0.2 <--- W AVELENGTHS TOW ARD LOAD - 0.0

1800 MHz

2000 MHz

Z0 = 50 Ω Frequency Z Load W MHz R jX 1800 4.34 –7.66 1810 4.28 –7.57 1820 4.21 –7.48 1830 4.15 –7.40 1840 4.09 –7.30 1850 4.03 –7.21 1860 3.96 –7.12 1870 3.90 –7.03 1880 3.85 –6.94 1890 3.79 –6.85 1900 3.73 –6.76 1910 3.67 –6.67 1920 3.62 –6.57 1930 3.56 –6.48 1940 3.50 –6.39 1950 3.45 –6.30 1960 3.40 –6.21 1970 3.34 –6.11 1980 3.29 –6.02 1990 3.24 –5.93 2000 3.19 –5.84

Data Sheet 11 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Reference Circuit, 1840 MHz Reference circuit schematic for ƒ = 1840 MHz Circuit Assembly Information DUT PTMA210152M LDMOS IC PCB LTN/PTMA210152M–18 0.76 mm [.030"] thick, εr = 3.43 Rogers RO4350 1 oz. copper Microstrip Electrical Characteristics at 1840 MHz Dimensions: L x W (mm) Dimensions: L x W (in.) a210152 m _bd_7- 23- 09 C18 1μF C16 0.1μF C15 12 pF C1 7 10μF C1 9 100μF 50 V VD2 C22 12 pF C2 1 3. 3pF 7 8 PTM A210152M51 6 DUT C1 4 12 pF C10 12 pF C12 10μF 10μF 1μF C11 1μF 0. 1μF C13 0.1μF VD1 100μF 50 V 1μF 10μF 1pF 0.1μF 12 pF VG1 G2V C2 0 1.2 pF 2.7 nH

Data Sheet 12 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Reference Circuit, 1840 MHz (cont.) a210152 m_c d _ 7-23 - 09 RF_IN RF_OUT VD1 VG2 C9 C10 C14 C17 C18 C22 R1 Q2 C21 C20 C11 C12 C13 C15 C16 VG1 VD2 C19 PTMA210152M Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C3, C8, C12, C17 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND C4, C9, C13, C16 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C2, C7, C11, C18 Tantalum capacitor, 10 µF, 50 V Digi-Key P5571-ND C1, C19 Electrolytic capacitor, 100 µF, 50 V Digi-Key PCE3718CT-ND C6 Ceramic capacitor, 1.0 pF ATC 600S 1R0 CT C20 Ceramic capacitor, 1.2 pF ATC 600S 1R2 CT C21 Ceramic capacitor, 3.3 pF ATC 600S 3R3 CT C5, C10, C14, Ceramic capacitor, 12 pF ATC 600S 120 JT C15, C22 Q1, Q2 Transistor Infineon Technologies BCP56 R1, R2 Chip resistor, 0 ohms Digi-Key P00ECT-ND R3, R4 Potentiometer, 2 k ohms Digi-Key 3224W-202ETR-ND L1 Inductor, 2.7 nH Digi-Key PCD1287CT-ND *Gerber Files for this circuit available on request

Data Sheet 13 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Pinout Diagram a210152 m - v1_pd_09 - 02- 2009 NC NC NC NC RFIN RFIN NC NC NC NC NC VDD1 VG1 VG2 VDD2 RFOUT VDD2 RFOUT VDD2 RFOUT VDD2 RFOUT VDD2 RFOUT VDD2 RFOUT Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Source: Plated copper heatslug on backside of package

Data Sheet 14 of 15 Rev. 04, 2010-04-16 PTMA210152M Confidential, Limited Internal Distribution Package Outline Specifications Package PG-DSO-20-63 2X 2.90 [0.114] MAX (2 PLS) 13.00 [0.512] MAX 110 11 20 INDEX PIN 1 14.20±0.30 11.00 [0.433] 9 X 1.27 = 11.43 9 X .050 = .450 1.10 [0.043] MAX (2 PLS) 2.95 [0.116] 6.00 [0.236] TOP VIEW BOTTOM VIEW [0.559±0.012] 0.40+0.13 [0.015+0.005] 0.25mm C A B 15.90±0.10 [0.626±0.004] 1.27 [0.050] 14°±1° (2 PLS) TOP/BOTTOM ALL SIDES 11.00±0.10 [0.433±0.004] 3.50 [0.137] MAX SEE DETAIL A SIDE VIEW END VIEW M SS 0.95±0.15 [0.037±0.006] 0.35 [0.014] GAUGE PLANE 0.15 [0.006] REF 0+0.1 [0+0.004] STANDOFF 1.60 [0.063] REF 0.25+0.07 –0.02 [0.010 ]+0.003 –0.001 DETAIL A PG-DSO-20-63_po_02-19-2010 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 3. JEDEC drawing number: MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte) : 5 – 15 micron [196.85 – 590.55 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower

Data Sheet 15 of 15 Rev. 04, 2010-04-16 PTMA210152M V1 Confidential, Limited Internal Distribution Revision History: 2010-04-16 Data Sheet Previous Version: 2009-10-19 Data Sheet Page Subjects (major changes since last revision)

3 Added moisture sensitivity level table

14 Updated package outline notes

81726 Munich, Germany

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