PTMA210152M CREE | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Features
- Designed for wide RF bandwidth and low memory effects
- Broadband input on-chip matching
- Typical two-carrier WCDMA performance at 2140 MHz, 28 V, 7 W avg. - Gain = 28.5 dB - Power Added Efficiency = 33 % - IMD3 = –32 dBc
- Typical CW performance at 2140 MHz, 28 V - Output power at P 1dB ~ 20 W - Efficiency > 49%
- Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F .
- Capable of handling 10:1 VSWR @ 28 V,
15 W (CW) output power
- Thermally-enhanced RoHS-compliant package PTMA210152M
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 2PTMA210152M RF Characteristics (cont.) Two-tone Measurement (tested in Wolfspeed test fixture) VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, POUT = 8 W AVG, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 27.5 28.5 30 dB Drain Efficiency hD 33 34 — % Third Order Intermodulation Distortion IMD3 — –33 –31 dBc Input Return Loss IRL — –14 –10 dB DC Characteristics Stage 1 Characteristic Conditions Symbol Min Typ Max Unit Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 3.5 — W Operating Gate Voltage VDS = 28 V, IDQ = 80 mA VGS 2 2.5 3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Stage 2 Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.6 — W Operating Gate Voltage VDS = 28 V, IDQ = 160 mA VGS 2 2.5 3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 3PTMA210152M Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Input Power PIN 15 dBm Total Device Dissipation PD 70 W Above 25°C derate by 0.4 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 15 W CW) Stage 1 RqJC 10.7 °C/W Stage 2 RqJC 2.9 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit
3 IPC/JEDEC J-STD-020 260 °C
Ordering Information
Type and Version Order Code Package and Description Shipping PTMA210152M V1 R500 PTMA210152M-V1-R500 PG-DSO-20-63, molded plastic T ape & Reel, 500 pcs
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 4PTMA210152M Typical Performance, circuit tuned for 2140 MHz (data taken in a production test fixture) -45 -40 -35 -30 -25 D3 (dBc) Two-carrier WCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz IMD3 ded Efficiency (%)
2110 MHz
2140 MHz
2170 MHz
-60 -55 -50 30 32 34 36 38 40 42 IMD Output Power (dBm) PAE IMD3 Power Add Gain (dB) CW Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA for 2110, 2140, 2170 MHz Gain ded Efficiency (%) 29 31 33 35 37 39 41 43 45 G Output Power (dBm) PAE Power Add -45 -35 -25 -15 MD3 (dBc) Two-tone Drive-up VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA For 2110, 2140, 2170 MHz PAE IMD3 ded Efficiency (%) -75 -65 -55 -45 30 32 34 36 38 40 42 44 IM Output Power, avg. ( dBm ) Power Add -45 -40 -35 -30 -25 PR (dBc) WCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz ACPR ded Efficiency (%) -60 -55 -50 30 32 34 36 38 40 AC Output Power (dBm) PAE Power Add
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 5PTMA210152M Typical Performance—2140 MHz (cont.) -45 -40 -35 -30 -25 CPR (dBc) Two-carrier WCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, series show 2110, 2140, 2170 MHz ACPR dded Efficiency (%) -60 -55 -50 30 32 34 36 38 40 42 AC Output Power (dBm) PAE Power Ad -45 -40 -35 -30 -25 CPR (dBc) Two-carrier WCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA, ƒ = 2140 MHz ACPR ded Efficiency (%) –25 °C 25 °C 90 °C -60 -55 -50 30 32 34 36 38 40 42 AC Output Power (dBm) PAE Power Add -45 -40 -35 -30 -25 Six-carrier TD-SCDMA Performance VDD = 28 V, IDQ1 = 80 mA, IDQ2 = 160 mA ACPR ded Efficiency (%) CPR (dBc) -60 -55 -50 30 32 34 36 38 40 42 Output Power (dBm) PAE Power Add AC
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 6PTMA210152M Broadband Circuit Impedance—2140 MHz Frequency Z Load W MHz R jX 2110 1.89 –5.84 2114 1.87 –5.80 2118 1.85 –5.76 2122 1.84 –5.72 2126 1.82 –5.67 2130 1.80 –5.63 2134 1.78 –5.60 2138 1.77 –5.55 2142 1.75 –5.51 2146 1.73 –5.47 2150 1.71 –5.42 2154 1.70 –5.38 2158 1.68 –5.34 2162 1.66 –5.30 2166 1.65 –5.25 2170 1.63 –5.21 See next page for reference circuit information 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.40 0.45 0.05 0.10 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 ornalized to 50 Ohms a210152m 210152m July 9, 2009 11:52:37 AM Z Load Z0 = 50 W Z LoadD S IN
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 7PTMA210152M Reference Circuit—tuned for 2140 MHz Reference circuit schematic for ƒ = 2140 MHz Circuit Assembly Information DUT PTMA210152M, LDMOS IC Reference Fixture Part No. LTN/PTMA210152M PCB Rogers RO4350: 0.76 mm [.030"] thick, er = 3.48, 1 oz. copper Find Gerber files for this reference fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF) Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) at 2140 MHz *Calculated at 10.5 a 2 1 0 1 5 2 m _ b d _ 7 - 2 3 - 0 9 J2J1 C18 10µF C16 0.1µF C15 12 pF C17 1µF C19 100µF 50V VD2 C22 12pF 7 8 9 PTMA210152M5 16 DUT C14 12pF C10 12pF C12 1µF 1µF 10µF C11 10µF 0.1µF C13 0.1µF V 100µF 50V 10µF 1µF 0.5pF 0.1µF 12pF VG1 G2V C20 2.2pF C21 1.0pF 5 6
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 8PTMA210152M Reference Circuit—2140 MHz (cont.) Component Description Suggested Manufacturer P/N or Comment C3, C8, C12, C17 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND C4, C9, C13, C16 Capacitor, 0.1 µF Digi-Key PCC104BCT -ND C2, C7, C11, C18 Tantalum capacitor, 10 µF , 50 V Digi-Key P5571-ND C1, C19 Electrolytic capacitor, 100 µF , 50 V Digi-Key PCE3718CT -ND C6 Ceramic capacitor, 0.5 pF ATC 600S 0R5 CT C20 Ceramic capacitor, 2.2 pF ATC 600S 2R2 CT C21 Ceramic capacitor, 1.0 pF ATC 600S 1R0 CT C5, C10, C14, C15, C22 Ceramic capacitor, 12 pF ATC 600S 120 JT Q1, Q2 Transistor Infineon Technologies BCP56 R1, R2 Chip resistor, 0 ohms Digi-Key P00ECT -ND R3, R4 Potentiometer, 2 k ohms Digi-Key 3224W-202ETR-ND Reference circuit assembly diagram (not to scale) a210152 m_ cd_7 -23 - 09 RF_IN RF_OUT VD1 VG2 C10 C14 C17 C18 C22 R1 Q2 C21 C20 C11 C12 C13 C15 C16 VG1 VD2 C19 PTMA210152MPTMA210152M_03A_CUS
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 9PTMA210152M Typical Performance, circuit tuned for 1840 MHz (data taken in a production test fixture) ain (dB) CW Performance VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, ƒ = 1805, 1830, 1880 MHz Gain ded Efficiency (%)PAE ded Efficiency (%)
1805 MHz
1830 MHz
1880 MHz
29 31 33 35 37 39 41 43 45 Ga Output Power (dBm) Power AddPower Add -40 -30 -20 -10 MD3 (dBc) Two-tone Drive-up VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, ƒ = 1805, 1830, 1880 MHz PAE IMD3 ded Efficiency (%) -60 -50 29 31 33 35 37 39 41 43 IM Output Power, avg. (dBm) Power Add -65 -55 -45 -35 n Spectrum (dBc) Edge Modulation Spectrum Performance VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 160 mA, series are at selected frequencies PAE 400 kHz ded Efficiency (%)
1805.2 MHz
1836.6 MHz
1879.8 MHz
-85 -75 30 32 34 36 38 40 42 Modulation Output Power (dBm) 600 kHz Power Add 4 or Magnitude (%) Edge - EVM VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 160 mA, series are at selected frequencies EVMPAE dded Efficiency (%) 30 31 32 33 34 35 36 37 38 39 40 41 42 Error Vecto Output Power (dBm) PAE Power Ad
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 10PTMA210152M Broadband Circuit Impedance—1840 MHz Frequency Z Load W MHz R jX 1800 4.34 –7.66 1810 4.28 –7.57 1820 4.21 –7.48 1830 4.15 –7.40 1840 4.09 –7.30 1850 4.03 –7.21 1860 3.96 –7.12 1870 3.90 –7.03 1880 3.85 –6.94 1890 3.79 –6.85 1900 3.73 –6.76 1910 3.67 –6.67 1920 3.62 –6.57 1930 3.56 –6.48 1940 3.50 –6.39 1950 3.45 –6.30 1960 3.40 –6.21 1970 3.34 –6.11 1980 3.29 –6.02 1990 3.24 –5.93 2000 3.19 –5.84 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.350.40 0.45 0.05 0.10 0.15 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 Nornalized to 50 Ohms a210152m for
1800 MHz
1900 MHz
2000 MHz
da210152m18 July 22, 2009 12:17:35 PM Z Load Z Source
2020 MHz
1800 4.34 -7 1810 4.28 -7 1820 4.21 -7 1830 4.15 -7 1840 4.09 -7 1850 4.03 -7 1860 3.96 -7 1870 3.90 -7 1880 3.85 -6 1890 3.79 -6 1900 3.73 -6 1910 3.67 -6 1920 3.62 -6 1930 3.56 -6 1940 3.50 -6 1950 3.45 -6 1960 3.40 -6 1970 3.34 -6 1980 3.29 -6 1990 3.24 -5 2000 3.19 -5 Z LoadD S IN Z0 = 50 W
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 11PTMA210152M Reference Circuit, tuned for 1840 MHz Reference circuit schematic for ƒ = 1840 MHz Circuit Assembly Information DUT PTMA210152M, LDMOS IC Test Fixture Part No. LTN/PTMA210152M–18 PCB Rogers RO4350: 0.76 mm [.030"] thick, er = 3.48, 1 oz. copper Fnd Gerber files for this test fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF) Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) at 1840 MHz *Calculated at 10.5 a 2 1 0 1 5 2 m _ b d _ 7 - 2 3 - 0 9 C18 1µF C16 0.1µF C15 12 pF C17 10µF C19 100µF 50V VD2 C22 12pF C21 3.3pF 7 8 PTMA210152M5 16 DUT C14 12pF C10 12pF C12 10µF 10µF 1µF C11 1µF 0.1µF C13 0.1µF V 100µF 50V 1µF 10µF 1pF 0.1µF 12pF VG1 G2V C20 1.2pF 2.7nH
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 12PTMA210152M Reference Circuit—1840 MHz (cont.) Reference circuit assembly diagram (not to scale) Component Description Suggested Manufacturer P/N or Comment C3, C8, C12, C17 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND C4, C9, C13, C16 Capacitor, 0.1 µF Digi-Key PCC104BCT -ND C2, C7, C11, C18 Tantalum capacitor, 10 µF , 50 V Digi-Key P5571-ND C1, C19 Electrolytic capacitor, 100 µF , 50 V Digi-Key PCE3718CT -ND C6 Ceramic capacitor, 1.0 pF ATC 600S 1R0 CT C20 Ceramic capacitor, 1.2 pF ATC 600S 1R2 CT C21 Ceramic capacitor, 3.3 pF ATC 600S 3R3 CT C5, C10, C14, C15, C22 Ceramic capacitor, 12 pF ATC 600S 120 JT Q1, Q2 Transistor Infineon Technologies BCP56 R1, R2 Chip resistor, 0 ohms Digi-Key P00ECT -ND R3, R4 Potentiometer, 2 k ohms Digi-Key 3224W-202ETR-ND L1 Inductor, 2.7 nH Digi-Key PCD1287CT -ND a210152 m_ cd_7 -23 - 09 RF_IN RF_OUT VD1 VG2 C9 C10 C14 C17 C18 C22 R1 Q2 C21 C20 C11 C12 C13 C15 C16 VG1 VD2 C19 PTMA210152M PTMA210152M_03A_CUS
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 13PTMA210152M Pinout Diagram (top view) Source/ground: plated copper heatslug on backside of package a 2 1 0 1 5 2 m - v 1 _ p d _ 0 9 - 0 2 - 2 0 0 9 NC NC NC NC RFIN RFIN NC NC NC NC NC VDD1 VG1 VG2 VDD2 RFOUT VDD2 RFOUT VDD2 RFOUT VDD2 RFOUT VDD2 RFOUT VDD2 RFOUT
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 14PTMA210152M Package Outline Specifications Package PG-DSO-20-63 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 3. JEDEC drawing number: MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte): 5 – 15 micron [196.85 – 590.55 microinch]. 2X 2.90 [0.114] MAX (2 PLS) 13.00 [0.512] MAX 110 11 20 INDEX PIN 1 14.20±0.30 11.00 [0.433] 9 X 1.27 = 11.43 9 X .050 = .450 1.10 [0.043] MAX (2 PLS) 2.95 [0.116] 6.00 [0.236] TOP VIEW BOTTOM VIEW [0.559±0.012] 0.40+0.13 [0.015+0.005] 0.25mm C A B 15.90±0.10 [0.626±0.004] 1.27 [0.050] 14°±1° (2 PLS) TOP/BOTTOM ALL SIDES 11.00±0.10 [0.433±0.004] 3.50 [0.137] MAX SEE DETAIL A SIDE VIEW END VIEW M S S 0.95±0.15 [0.037±0.006] 0.35 [0.014] GAUGE PLANE 0.15 [0.006] REF 0+0.1 [0+0.004] STANDOFF 1.60 [0.063] REF 0.25+0.07 –0.02 [0.010 ]+0.003 –0.001 DETAIL A Diagram Notes–unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 3. JEDEC drawing number : MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte) : 5 - 15 micron [196.85 – 590.55 microinch].
www.wolfspeed.comRev. 10, 2018-05-19 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTMA210152M 01 2009-06-15 Preliminary all Preliminary specification for new product in development. 02 2009-08-11 Production all Add 1840 MHz characterization. 03 2009-09-02 Production 14 Update pinout diagram. 04 2010-04-16 Production 3; 14 Add moisture sensitivity information; update package outline notes. 05 2010-10-28 Production 6, 11 Recalculate electrical characteristics. 06 2011-04-25 Production 4, 6 Removed graphs. 07 2011-06-10 Production 2 Clarify DC characteristics per stage 08 2011-06-11 Production 2 Revise RF table to better reflect test specifications. 09 2014-05-07 Production 3 Add shipping option. 10 2018-05-19 Production All Converted to Wolfspeed Data Sheet