PTMA180402M CREE | Alldatasheet
Document overview
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Technical content
Features
- Designed for wide RF bandwidth and low memory effects
- On-chip matching, integrated input DC block, 50-ohm input and ~4-ohm output
- Typical single-carrier CDMA performance at
1960 MHz, 28 V
- Average output power = 5 W - Linear gain = 30 dB - Efficiency = 16% - Adjacent channel power = –52 dBc
- Typical two-tone CW performance at
- Output power (PEP) = 40 W at IMD3 = –30 dBc - Efficiency = 34%
- Capable of handling 10:1 VSWR @ 28 V, 40 W (CW) output power
- Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F
- Thermally-enhanced, RoHS-compliant package -25 -20 -15 -10 1700 1800 1900 2000 2100 2200 Return Loss (dB) Gain (dB) Frequency (MHz) Broadband Performance VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA, Fixture tuned for 1930 - 1990 MHz Gain Return Loss PTMA180402M
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 2PTMA180402M RF Characteristics (cont.) Two-tone Specifications (not subject to production test—verified by design/characterization in Wolfspeed test fixture) VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA, POUT = 40 W PEP , ƒ = 1960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 30 — dB Power Added Efficiency PAE — 34 — % Third Order Intermodulation Distortion IMD3 — –32 — dBc DC Characteristics Stage 1 Characteristics Conditions Symbol Min Typ Max Unit Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance Stage 1 VGS = 10 V, VDS = 0.1 V RDS(on) — 1.6 — Ω Operating Gate Voltage VDS = 28 V, IDQ1 = 160 mA, VGS 2.0 2.5 3.0 V Stage 2 Characteristics Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance Stage 2 VGS = 10 V, VDS = 0.1 V RDS(on) — 0.21 — Ω Operating Gate Voltage VDS = 28 V, IDQ2 = 360 mA VGS 2.0 2.5 3.0 V
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 3PTMA180402M Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 175 W Above 25°C derate by 1.0 W/°C Storage Temperature Range TSTG –40 to +150 °C Overall Thermal Resistance Stage 1, IDQ1 = 160 mA RqJC 3.6 °C/W (TCASE = 70°C, 40 W CW) Stage 2, IDQ2 = 360 mA RqJC 1.5 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit
3 IPC/JEDEC J-STD-020 260 °C
Ordering Information
Type and Version Order Code Package and Description Shipping PTMA180402M V1 R500 PTMA180402M-V1-R500 PG-DSO-20-63, molded plastic T ape & Reel, 500 pcs
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 4PTMA180402M Typical Performance, circuit tuned for 2140 MHz (data taken in Wolfspeed test fixture) -50 -40 -30 -20 ded Efficiency (%) MD3 (dBc) Two-tone Drive Up VDD = 28 V, IDQ1 = 150 mA, IDQ2 = 400 mA, ƒ = 2140 MHz, 1 MHz tone spacing IM3L -70 -60 29 31 33 35 37 39 41 43 45 Power Add IM Average Output Power (dBm) IM3U Power Added Efficiency -32 -22 -12 1700 1900 2100 2300 2500 Input Return Loss (dB) Gain (dB) Frequency (MHz) Broadband Sweep VDD = 28 V, IDQ1 = 150 mA, IDQ2 = 400 mA, Fixture tuned for 2110 - 2170 MHz Gain IRL 30 32 34 36 38 40 42 44 46 Gain (dB) Output Power (dBm) Power Sweep, P-1dB VDD = 28 V, IDQ1 = 150 mA, IDQ2 = 400 mA
2110 MHz
2140 MHz
2170 MHz
Power Added Efficiency (%) Power Added Efficiency -50 -40 -30 -20 ed Efficiency (%) MD3 (dBc Two-tone Drive Up VDD = 28 V, IDQ1 = 150 mA, IDQ2 = 400 mA,
1 MHz tone spacing
-70 -60 -50 29 31 33 35 37 39 41 43 45 Power Add IM Average Output Power (dBm) Power Added Efficiency IMD3 (dBc) IMD3
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 5PTMA180402M Broadband Circuit Impedance — 2140 MHz Frequency Z Load Ω MHz R jX 1900 5.76 –6.18 1920 5.63 –6.13 1940 5.51 –6.09 1960 5.39 –6.04 1980 5.27 –5.99 2000 5.15 –5.93 2020 5.03 –5.88 2040 4.92 –5.82 2060 4.80 –5.76 2080 4.68 –5.69 2100 4.57 –5.63 2120 4.45 –5.56 2140 4.34 –5.49 2160 4.23 –5.41 2180 4.12 –5.34 2200 4.01 –5.26 Z LoadD S IN 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.40 0.45 0.05 0.10 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 Nornalized to 50 Ohms a180402m-2140 MHz
2200 MHz
1900 MHz
da180402m2140 Sept. 20, 2009 8:20:58 PM Z Load Z0 = 50 Ω
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 6PTMA180402M Reference Circuit, tuned for 2140 MHz Reference circuit schematic for ƒ = 2140 MHz Circuit Description DUT PTMA180402M, LDMOS IC PCB Rogers RO4350, 0.76 mm [.030"] thick, er = 3.48, 1 oz. copper Test fixture part no. LTN/PTMA180402M-21 Find Gerber files for this test fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF) Circuit Assembly Information Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) at 2140 MHz 100µF 50V C11 10µF G2V V 10µF VD1 C18 10µF C16 0.1µF C15 12pF C17 1µF C13 0.1µF C12 1µF C14 12pF 12pF 0.1µF 1µF C10 12pF 1µF 10µF 0.1µF 183 PTMA180402M DUT C29 100µF 50V C27 1µF C25 12pF C26 0.1µF C28 10µF C19 100µF 50V C20 12pF C30 1.8pF C31 1.8pF D1V 11 10 C32 2.4pF 6 7 C33 1.2pF C34 12pF C21 0.1µF C22 1µF C23 10µF VD2 C24 100µF 50V .5pF M A 1 8 0 4 0 2 m _ 2 1 4 0 M H z _ B D _ 9 - 2 - 0 9 RF_IN RF_OUT
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 7PTMA180402M Reference Circuit — 2140 MHz (cont.) Assembly diagram for 2140 MHz reference circuit (not to scale) Component Description Manufacturer P/N or Comment C1, C19, C24, C29 Electrolytic capacitor, 100 µF , 50 V Panasonic Electronic Components EEV-FK1H101GP C2, C7, C11, C18, Ceramic capacitor, 10 µF Murata GRM422Y5V106Z050AL C23, C28 C3, C8, C12, C17, Ceramic capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C22, C27 C4, C9, C13, C16, Capacitor, 0.1 µF Kemet C1210C104K5RACTU C21, C26 C5, C10, C12, C15, Ceramic capacitor, 12 pF ATC 600S120JT C20, C25, C34 C6 Ceramic capacitor, 0.5 pF ATC 100B 0R5 C30, C31 Ceramic capacitor, 1.8 pF ATC 600S1R8CT C32 Ceramic capacitor, 2.4 pF ATC 100B 2R4 C33 Ceramic capacitor, 1.2 pF ATC 100B 1R2 Q1, Q2 Transistor Infineon Technologies BCP56 R1, R2 Resistor, 0 Ω Panasonic Electronic Components ERJ-3GEY0R00V R3, R4 Potentiometer, 2k Ω Bourns, Inc. 3224W-1-202E C33 C24C23 C22 C21 C20 C29 C28 C27 C26 C25 C32 C34 C31 C30 C19 C15 C16 C17 C18 C8 C9 C13 C14C10 C11 C12 M A 1 8 0 4 0 2 m _ 2 1 4 0 M H z _ C D _ 9 - 2 - 0 9 VG2 VD1 VG1 VD2 VD2VD1 RF_IN RF_OUT R3 R4 Q2Q1 PTMA180402M_02A
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 8PTMA180402M Typical Performance, circuit tuned for 1960 MHz (data taken in a production test fixture) 30 32 34 36 38 40 42 44 46 48 Gain (dB) Output Power (dBm) CW Power Performance VDD = 28 V, IDQ1 = 130 mA, IDQ2 = 360 mA, ƒ = 1930, 1960, 1990 MHz
1930 MHz
1960 MHz
1990 MHz
Power Added Efficiency (%) Efficiency 30 32 34 36 38 40 42 44 46 Gain (dB) Output Power (dBm) CW Performance at Selected Drain Voltage VDD = 24 V, 28 V, 32 V IDQ1 = 130 mA, IDQ2 = 360 mA, ƒ = 1960 MHz 24 V 32 V 28 V -60 -50 -40 -30 -20 -10 30 32 34 36 38 40 42 44 46 IMD3 (dBc) Average Output Power ( dBm ) Two-tone Drive-up VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA ƒ = 1930, 1960, 1990 MHz Power Added Efficiency (%) -65 -60 -55 -50 -45 -40 -35 29 31 33 35 37 39 41 Power Added Efficiency (%) Output Power (dBm) CDMA IS-95 Drive-up, 3 Frequencies VDD = 28 V, IDQ1 = 160, IDQ2 = 360 mA, ƒ = 1930, 1960, 1990 MHz Adjacent Channel Power Ratio (dB) Efficiency ACPR Power Added Efficiency Power Added EfficiencyPower Added Efficiency
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 9PTMA180402M Typical Performance —1960 MHz (cont.) Edge Modulation Performance VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA ƒ = 1930 1960 1990 MHz -5040 ƒ = 1930, 1960, 1990 MHz -60 -55 400 kHz ctrum (dB ency (%) -70 -65 ation Spec ded Efficie -80 -75 600 kHz ge Modula Power Add Power Added Efficiency -85 30 32 34 36 38 40 42 44 Edg P Output Power ( dBm ) -40 -35 -30 -25 -20 M3 (dBc) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA, ƒ = 1930, 1960, 1990 MHz, PAR = 8 dB, 10 MHz spacing, 3.84 MHz bandwidth dded Efficiency (%) Power Added Efficiency -50 -45 30 32 34 36 38 40 42 I Output Power ( dBm ) IM3 Power Ad Edge EVM Performance VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA ƒ = 1930 1960 1990 MHz 3.540 ƒ 1930, 1960, 1990 MHz 2.5 3.0 de (%) ncy (%) 1.5 2.0 r Magnitud ed Efficien Power Added 0 5 1.0 ror Vector EVM ower Adde Efficiency 0.0 0.5 30 32 34 36 38 40 42 44 Err Po Output Power ( dBm ) -35 -30 -25 -20 M3 (dBc) Two-carrier WCDMA at Selected Temperatures VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA, ƒ = 1960 MHz, PAR = 8 dB, 10 MHz spacing,
3.84 MHz bandwidth
25°C 90°C –25°C Power Added Efficiency dded Efficiency (%) -50 -45 -40 30 32 34 36 38 40 42 IM Output Power ( dBm ) IM3 Power Ad
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 10PTMA180402M Broadband Circuit Impedance — 1960 MHz Z LoadD S IN Frequency Z Load Ω MHz R jX 1800 5.56 –6.95 1810 5.48 –6.91 1820 5.39 –6.87 1830 5.31 –6.83 1840 5.23 –6.79 1850 5.15 –6.75 1860 5.07 –6.70 1870 4.99 –6.66 1880 4.91 –6.61 1890 4.84 –6.56 1900 4.76 –6.51 1910 4.69 –6.47 1920 4.61 –6.42 1930 4.54 –6.36 1940 4.47 –6.31 1950 4.40 –6.26 1960 4.33 –6.21 1970 4.26 –6.15 1980 4.19 –6.10 1990 4.12 –6.04 2000 4.06 –5.99 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.40 0.45 0.05 0.10 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 Nornalized to 50 Ohms a180402m-1900 MHz
2200 MHz 1800 MHz
da180402m1900 Sept. 20, 2009 8:34:45 PM Z Load Z0 = 50 Ω
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 11PTMA180402M Reference Circuit, tuned for 1960 MHz Reference circuit schematic for ƒ = 1960 MHz Circuit Description DUT PTMA180402M, LDMOS IC PCB Rogers RO4350, 0.76 mm [.030"] thick, er = 3.48, 1 oz. copper Test Fixture Part No. LTN/PTMA180402M Find Gerber files for this test fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF) Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) at 1960 MHz 1µF 12pF 0.1µF 10µF C13 12pF G2V C11 1µF C10 10µF C12 0.1µF C16 1µF C14 12pF C15 0.1µF C18 100µF 50V C17 10µF D1V VD1 G1V 100µF 50V 10µF 1µF DUT PTMA180402M 0.1µF 12pF C29 1.8pF18 C30 1.8pF 2 3 C27 10µF C25 0.1µF C24 12pF 10 C26 1µF C28 100µF 50V VD2 C33 12pF C31 2.7pF 4 7 C19 12pF C20 0.1µF C21 1µF 8 J2 C23 100µF 50V C22 10µF C32 1pF M A 1 8 0 4 0 2 m _ 1 9 6 0 M H z _ B D _ 9 - 2 - 0 9 RF_IN RF_OUT
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 12PTMA180402M Reference Circuit — 1960 MHz (cont.) Assembly diagram for 1960 MHz reference circuit (not to scale) Component Description Manufacturer P/N or Comment C1, C18, C23, C28 Electrolytic capacitor, 100 µF , 50 V Panasonic Electronic Components EEV-FK1H101GP C2, C6, C10, C17, Ceramic capacitor, 10 µF Murata GRM422Y5V106Z050AL C22, C27 C3, C7, C11, C16, Ceramic capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C21, C26 C4, C8, C12, C15, Capacitor, 0.1 µF Kemet C1210C104K5RACTU C20, C25 C5, C9, C13, C14, Ceramic capacitor, 12 pF ATC 600S120JT C19, C24, C33 C29, C30, C31 Ceramic capacitor, 1.8 pF ATC 600S1R8CT C32 Ceramic capacitor, 1.0 pF ATC 100B 1R0 Q1, Q2 Transistor Infineon Technologies BCP56 R1, R2 Resistor, 0 Ω Panasonic Electronic Components ERJ-3GEY0R00V R3, R4 Potentiometer, 2k Ω Bourns, Inc. 3224W-1-202E C32 C23C22 C21 C20 C19 C28 C27 C26 C25 C24 C31 C33C30 C29 C18 C14 C15 C16 C17 C8 C12 C13C9 C10 C11 M A 1 8 0 4 0 2 m _ 1 9 6 0 M H z _ C D _ 9 - 2 - 0 9 R4R2 Q2Q1 VG1 VG2 VD2 VD1 VD1 VD2 RF_IN RF_OUT PTMA180402M_02A
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 13PTMA180402M Pinout Diagram Thermal FET a 1 8 0 4 0 2 m _ p d _ 9 - 3 - 2 0 0 9 VD2, RF Out VD2, RF Out VD2, RF Out VD2, RF Out VD2, RF Out VD2, RF Out NC NC NC NC RF In RF In VG Thermal FET VD Thermal FET VD1 VD1 VD1 VD1 VG1 VG2 Source: plated copper heat slug on backside of package
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19 14PTMA180402M Package Outline Specifications Package PG-DSO-20-63 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 3. JEDEC drawing number: MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. Sn plating (matte): 5 – 15 micron [196.85 – 590.55 microinch]. 2X 2.90 [0.114] MAX (2 PLS) 13.00 [0.512] MAX 110 11 20 INDEX PIN 1 14.20±0.30 11.00 [0.433] 9 X 1.27 = 11.43 9 X .050 = .450 1.10 [0.043] MAX (2 PLS) 2.95 [0.116] 6.00 [0.236] TOP VIEW BOTTOM VIEW [0.559±0.012] 0.40+0.13 [0.015+0.005] 0.25mm C A B 15.90±0.10 [0.626±0.004] 1.27 [0.050] 14°±1° (2 PLS) TOP/BOTTOM ALL SIDES 11.00±0.10 [0.433±0.004] 3.50 [0.137] MAX SEE DETAIL A SIDE VIEW END VIEW M S S 0.95±0.15 [0.037±0.006] 0.35 [0.014] GAUGE PLANE 0.15 [0.006] REF 0+0.1 [0+0.004] STANDOFF 1.60 [0.063] REF 0.25+0.07 –0.02 [0.010 ]+0.003 –0.001 DETAIL A Diagram Notes–unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 3. JEDEC drawing number : MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte) : 5 - 15 micron [196.85 – 590.55 microinch].
www.wolfspeed.comRev. 10, 2018-05-19 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTMA180402M 01 2008-12-23 Production all First information about this product 02 2009-01-22 Production 10 Revised pinout diagram 03 2009-03-03 Production 9 Package outline updated 04 2009-07-28 Production 1 Frequencies of operation changed. 05 2009-10-13 Production 3-12 Added 2100 MHz information and revised 1900 MHz characterization and circuit information 06 2010-04-16 Production 3, 14 Moisture sensitivity level table added; package outline notes updated 07 2010-11-02 Production 5, 11 Recalculate electrical characteristics 07.1 2011-03-17 Production 9, 11 Removed graph; corrected typo 08 2011-08-10 Production 1-2 Updates to and clarification for RF and DC tables. 09 2014-05-27 Production 3 Shipping option added. 10 2018-05-19 Production All Converted to Wolfspeed Data Sheet