PTMA080152M CREE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 11
Technical content
Features
- Broadband on-chip matching, 50-ohm input and ~10 -ohm output
- Typical GSM/EDGE performance at 28 V, 920 to
960 MHz
- Gain = 30 dB - Efficiency = 34% at 8 W output power - EVM @ 8 W = 1.5% - ACPR @ 400 kHz = –61 dBc - ACPR @ 600 kHz = –75 dBc
- Typical CW performance, 940 MHz, 28 V - Output power at P 1dB = 20 W - Efficiency = 49%
- Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F .
- Excellent thermal stability, low HCI drift
- Capable of handling 10:1 VSWR @ 28 V, 20 W (CW) output power
- RoHS-compliant package PTMA080152M
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-05-19 2PTMA080152M RF Characteristics (cont.) GSM/EDGE Characteristics (cont.) VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, ƒ = 920 to 960 MHz, POUT = 8 W Avg. Characteristic Symbol Min Typ Max Unit Modulation Spectrum 400 kHz offset ACPR1 — –61 — dBc 600 kHz offset ACPR2 — –75 — dBc Spurs Load 3:1 — — — –60 dBc Gain Flatness ∆G — 0.2 — dB Two-tone Measurements (tested in Wolfspeed test fixture) VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA, POUT = 8 W avg., ƒ = 940 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 29 30 — dB Drain Efficiency hD 32.5 33.5 — % Third Order Intermodulation Distortion IMD3 — –34 –31 dBc DC Characteristics Stage 1 Characteristics Conditions Symbol Min Typ Max Unit Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 3.48 — Ω Operating Gate Voltage VDS = 28 V, IDQ1 = 70 mA, VGS 2.0 2.5 3.0 V Stage 2 Characteristics Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.6 — Ω Operating Gate Voltage VDS = 28 V, IDQ2 = 90 mA VGS 2.0 — 3.0 V
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-05-19 3PTMA080152M Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Input Power PIN 15 dBm Total Device Dissipation PD 91 W Above 25°C derate by 0.52 W/°C Storage Temperature Range TSTG –40 to +150 °C Overall Thermal Resistance (TCASE = 70°C) Stage 1 RθJC 8.5 °C/W POUT = 15 W, IDQ1 = 70 mA, IDQ2 = 90 mA Stage 2 RθJ0C 2.5 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit
3 IPC/JEDEC J-STD-020 260 °C
Ordering Information
Type and Version Order Code Package and Description Shipping PTMA080152M V1 R500 PTMA080152M-V1- R500 PG-DSO-20-63, molded plastic T ape & Reel, 500 pcs
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-05-19 4PTMA080152M Typical Performance (data taken in Wolfspeed production test fixture) -20 -16 -12 turn Loss (dB) Gain (dB) Broadband Performance VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA, fixture tuned for 920 – 960 MHz Gain Return Loss -32 -28 -24 750 800 850 900 950 1000 1050 1100 1150 Ret Frequency (MHz) CW Performance V = 28 V I = 70 mA I = 90 mA VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA ƒ = 920 , 940, 960 MHz Efficiency(%) (dB) Gain
920 MHz
940 MHz
Gain ( PAE 29 31 33 35 37 39 41 43 45 P Output Power (dBm) Vector Magnitude (%) dded Efficiency (%) EDGE - EVM VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, ƒ = 942.6 MHz PAE 90 °C –25 °C 25 °C 30 31 32 33 34 35 36 37 38 39 40 41 42 Error V Power A Output Power (dBm) EVM EDGE - EVM VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, series are at selected frequencies q
925.2 MHz
gnitude (%) ficiency (%) EVM
942.6 MHz
959.8 MHz
30 31 32 33 34 35 36 37 38 39 40 41 42 Output Power (dBm)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-05-19 5PTMA080152M Typical Performance (cont.) EDGE Modulation Spectrum Performance VDD = 28 V I DQ1 = 70 mA I DQ2 = 120 mA -3550 VDD 28 V, IDQ1 70 mA, IDQ2 120 mA, series show ƒ = 942.6 MHz, at selected temperatures -4540 m (dBc) ency (%) PAE90 °C –25 °C 25 °C -65 -55 on Spectru ded Efficie -7510 Modulatio Power Add 400 kHz 600 kH -850 30 32 34 36 38 40 42 P Output Power (dBm) 600 kHz -70 -65 -60 -55 -50 -45 -40 -35 dulation Spectrum (dBc) er Added Efficiency (%) EDGE Modulation Spectrum Performance VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, series are at selected frequencies PAE 400 kHz -85 -80 -75 30 32 34 36 38 40 42 Mod Powe Output Power (dBm) 600 kHz Gate – Source Voltage vs. Temperature VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA 1.15 tage V 1.05 1.10 ource Volt V VGS1 VGS2 0 9 1.00 Gate – So hreshold), Slope = –1.3 mV/°C 0.90 0.95 malized G (th 0.85 -30 -10 10 30 50 70 90 Norm T t ( °C)Temperature (°C)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-05-19 6PTMA080152M 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.2 0.4 0.1 0.3 0. 2 0.4 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.45 0.05 0.45 <---W AVELENGTHS TOW ARD LO AD - 0.0
700 MHz
1000 MHz
Z0 = 50 Ω Frequency Z Load Ω MHz R jX 700 10.6 –4.3 720 10.1 –3.7 740 9.8 –3.1 760 9.5 –2.4 780 9.2 –1.8 800 9.0 –1.2 820 8.8 –0.5 840 8.7 0.1 860 8.6 0.8 880 8.5 1.4 900 8.5 2.1 920 8.5 2.8 940 8.5 3.5 960 8.6 4.3 980 8.7 5.0 1000 8.8 5.8 Broadband Circuit Impedance See next page for reference circuit information
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-05-19 7PTMA080152M Reference circuit schematic for ƒ = 940 MHz Circuit Assembly Information DUT PTMA080152M, LDMOS IC Reference Fixture Part No. LTN/PTMA080152M PCB 0.76 mm [.030"] thick, εr = 3.48, Rogers RO4350, 1 oz. copper Find Gerber files for this reference fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF) Microstrip Electrical Characteristics at 940 MHz1 L x W (mm) L x W (in.) Reference Circuit C18 10µF C16 0.1µF C15 47 pF C17 1µF C19 100µF 50V VD2 l 3 l 4 C22 33pF l 5 l 6 C21 5.6pF l 7 l 8 J2 PTMA080152M DUT C14 47pF C10 47pF C12 1µF 1µF 10µF C11 10µF 0.1µF C13 0.1µF l 1 VD1 100µF 50V 10µF 1µF 1pF l 2 0.1µF 47pF VG1 G2V C20 2.2pF a 0 8 0 1 5 2m _ b d_ 8 - 2 2- 1 1 2k variable 2k variable
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-05-19 8PTMA080152M Component Description Suggested Manufacturer P/N or Comment C3, C8, C12, C17 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND C4, C9, C13, C16 Capacitor, 0.1 µF Digi-Key PCC104BCT -ND C2, C7, C11, C18 Tantalum capacitor, 10 µF , 50 V Digi-Key P5571-ND C1, C19 Electrolytic capacitor, 100 µF , 50 V Digi-Key PCE3718CT -ND C6 Ceramic capacitor, 1.0 pF ATC 600S 1RO CT C20 Ceramic capacitor, 2.2 pF ATC 600S 2R2 CT C21 Ceramic capacitor, 5.6 pF ATC 600S 5R6 CT C22 Ceramic capacitor, 33 pF ATC 600S 330 JT C5, C10, C14, C15 Ceramic capacitor, 47 pF ATC 600S 470 JT Q1, Q2 Transistor Infineon Technologies BCP56 R1, R2 Chip resistor, 0 ohms Digi-Key PXXECT -ND R3, R4 Variable resistor, 2K ohms Digi-Key 3224W-202ETR-ND RF_OUT a 0 8 0 1 5 2m _cd _ 2- 1 0- 0 9 RF_IN VD1 VD2 VG1 VG2 C19 C14 C18C17 C12 C13 C16 C15C1 C10 C11 C20 C21 C22 Q1R1 Reference Circuit (cont.) Reference circuit assembly diagram (not to scale) PTMA080152M_02A_CUS
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-05-19 9PTMA080152M Pinout Diagram (top view) Source/ground: plated copper heatslug on backside of package a 0 8 0 1 5 2m _ p d _1 0 -3 1 -0 8 VDD 1 VDD 1 RF In RF In VG 1 VG 2 NC NC VDD 2, RF Out VDD 2, RF Out VDD 2, RF Out VDD 2, RF Out VDD 2, RF Out VDD 2, RF Out NC NC NC NC NC NC
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-05-19 10PTMA080152M Package Outline Specifications Package PG-DSO-20-63 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 3. JEDEC drawing number: MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte): 5 – 15 micron [196.85 – 590.55 microinch]. 2X 2.90 [0.114] MAX (2 PLS) 13.00 [0.512] MAX 110 11 20 INDEX PIN 1 14.20±0.30 11.00 [0.433] 9 X 1.27 = 11.43 9 X .050 = .450 1.10 [0.043] MAX (2 PLS) 2.95 [0.116] 6.00 [0.236] TOP VIEW BOTTOM VIEW [0.559±0.012] 0.40+0.13 [0.015+0.005] 0.25mm C A B 15.90±0.10 [0.626±0.004] 1.27 [0.050] 14°±1° (2 PLS) TOP/BOTTOM ALL SIDES 11.00±0.10 [0.433±0.004] 3.50 [0.137] MAX SEE DETAIL A SIDE VIEW END VIEW M S S 0.95±0.15 [0.037±0.006] 0.35 [0.014] GAUGE PLANE 0.15 [0.006] REF 0+0.1 [0+0.004] STANDOFF 1.60 [0.063] REF 0.25+0.07 –0.02 [0.010 ]+0.003 –0.001 DETAIL A Diagram Notes–unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 3. JEDEC drawing number : MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte) : 5 - 15 micron [196.85 – 590.55 microinch].
www.wolfspeed.comRev. 08, 2018-05-19 11PTMA080152M Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 01 2007-05-05 Preliminary all Preliminary specification for new product in development. 02 2009-02-27 Production all Revise package information and circuit diagrams, add impedance information. 03 2009-08-31 Production 1 Revise VSWR rating. 04 2010-04-16 Production 3; 10 Add moisture sensitivity information; update package outline notes. 05 2011-05-17 Production 2; 4 Revise DC table; remove graph. 06 2011-08-22 Production 2; all Revise two-tone table; minor updates to graphics and diagrams for readability. 07 2014-05-07 Production 3 Add shipping option. 08 2018-05-19 Production All Converted to Wolfspeed Data Sheet