PTFC270101MV1R1K | DigiCamel IC Datasheet

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Technical content

Features

Unmatched input and output Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efﬁ ciency = 60% Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efﬁ ciency = 21% - ACPR = –44.9 dBc @ 5 MHz Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power Integrated ESD protection Pb-free and RoHS compliant

Description

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon production test fixture) VDD = 28 V, IDQ = 120 mA, POUT = 2.4 W avg, ƒ = 2170 MHz 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G ps 19.5 20.5 — dB 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth Gain Efficiency c270101m-2.1-gr1c

Data Sheet 2 of 22 Rev. 04.1, 2016-07-26 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V( BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 1 µA V DS = 63 V, VGS = 0 V I DSS — — 10 µA Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — 1 — µA On-State Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 1 —  Operating Gate Voltage V DS = 28 V, IDQ = 120 mA V GS 2.2 2.7 3.2 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS –6 to +10 V Operating Voltage V DD 0 to +32 V Junction Temperature T J 225 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 12 W CW) R JC 4.04 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit

3 IPC/JEDEC J-STD-020 260 °C

Test Type Rated Class Standard Human Body Model (HBM) 1A ANSI/ESDA/JEDEC JS-001 Charge Device Model (CDM)  JESD 22-C101

Ordering Information

Type Order Code Package and Description Shipping PTFC270101M V1 R1K PTFC270101MV1R1KXUMA1 PG-SON-10, molded plastic, SMD Tape & Reel, 1000 pcs

Data Sheet 3 of 22 Rev. 04.1, 2016-07-26 PTFC270101M Evaluation Boards Order Code Frequency Description LTN/PTFC270101M V1 2110 – 2170 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270101M E3 2620 – 2690 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270101M E4 920 – 960 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270101M E5 1930 – 1990 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270101M E6 1805 – 1880 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270101M E7 2400 – 2500 MHz Class AB with combined outputs, R04360, 0.508 mm thick Find Gerber files for these reference fixtures on the Infineon Web site at www.infineon.com/rfpower See next page for Typical RF Performance

Data Sheet 4 of 22 Rev. 04.1, 2016-07-26 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2140 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth Gain Efficiency c270101m-2.1-gr1b -65 -55 -45 -35 -25 -15 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2110 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth IMD Low IMD Up ACPR Efficiency c270101m-2.1-gr2a 5 -65 -55 -45 -35 -25 -15 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2140 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth IMD Low IMD Up ACPR Efficiency c270101m-2.1-gr2b Typical RF Performance, 2110 – 2170 MHz (data taken in production test fixture) 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2110 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth Gain Efficiency c270101m-2.1-gr1a

Data Sheet 5 of 22 Rev. 04.1, 2016-07-26 PTFC270101M -65 -55 -45 -35 -25 -15 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth IMD Low IMD Up ACPR Efficiency c270101m-2.1-gr2c Typical RF Performance, 2110 – 2170 MHz (cont.) 24 26 28 30 32 34 36 38 40 42 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 2170 MHz VDD = 24 V VDD = 28 V VDD = 32 V c270101m-2.1-gr5c Gain Efficiency 24 26 28 30 32 34 36 38 40 42 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 2140 MHz VDD = 24 V VDD = 28 V VDD = 32 V c270101m-2.1-gr5b Gain Efficiency 24 26 28 30 32 34 36 38 40 42 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 2110 MHz VDD = 24 V VDD = 28 V VDD = 32 V c270101m-2.1-gr5a Gain Efficiency

Data Sheet 6 of 22 Rev. 04.1, 2016-07-26 -50 -40 -30 -20 -10 24 26 28 30 32 34 36 38 40 IMD, Up and Low (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW

2170 IMD-U

2140 IMD-U

2110 IMD-U

2170 IMD-L

2140 IMD-L

2110 IMD-L

c270101m-2.1-gr3 Typical RF Performance, 2110 – 2170 MHz (cont.) 24 26 28 30 32 34 36 38 40 42 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 120 mA

2110 MHz

2140 MHz

2170 MHz

c270101m-2.1-gr4 Gain Efficiency -25 -20 -15 -10 1975 2075 2175 2275 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Performance Gain and Input Return Loss VDD = 28 V, IDQ = 120 mA Gain Input Return Loss c270101m-2.1-gr6_v2

Data Sheet 7 of 22 Rev. 04.1, 2016-07-26 PTFC270101M Reference Circuit, 2100 MHz DUT PTFC270101M V1 Reference Circuit No. LTN/PTFC270101M V1 Order Code LTNPTFC270101MV1TOBO1 PCB Rogers RO4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [] Zl [] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [] Gain [dB] POUT [dBm] POUT [W] PAE [%] Broadband Circuit Impedance Z Source Z Load G S DFreq [MHz] Z Source  Z Load  Rj XRj X Load Pull Performance

Data Sheet 8 of 22 Rev. 04.1, 2016-07-26 Assembly diagram for reference circuit LTN/PTFC270101M V1, 2100 MHz (not to scale) RF_IN RF_OUT ptfc270101m_cd_10-22-14 2100 MHZPTFC270101M_05 (169) RO4350, .020 R102 C103 C104 R101 C101 C105 C102 C107 C108 C106 VDD VGG DUT Components Information Component Description Manufacturer P/N C101 Capacitor, 1.5 pF ATC ATC600F1R5CW250 C102, C103, C106, C107 Capacitor, 12 pF ATC ATC600F120JW250 C104 Capacitor, 1.0 µF TDK Corporation C4532X7R2A105M230KA C105 Capacitor, 1.2 pF ATC ATC600F1R2CW250 C108 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V Reference Circuit, 2100 MHz (cont.)

Data Sheet 9 of 22 Rev. 04.1, 2016-07-26 PTFC270101M RF Characteristics Two-carrier WCDMA Characteristics (not subject to production test) VDD = 28 V, IDQ = 120 mA, POUT = 1.3 W avg, ƒ1 = 947.5 MHz, ƒ2 = 957.5 MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G ps — 23 — dB Drain Efﬁ ciency D — 20 — % Intermodulation Distortion IMD — –39 — dBc 24 26 28 30 32 34 36 38 40 42 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 920 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270101m-900-gr1a 0 24 26 28 30 32 34 36 38 40 42 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 940 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270101m-900-gr1b Typical RF Performance, 920 – 960 MHz (data taken in production test fixture)

Data Sheet 10 of 22 Rev. 04.1, 2016-07-26 24 26 28 30 32 34 36 38 40 42 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 960 MHz. 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270101m-900-gr1c -65 -55 -45 -35 -25 -15 24 26 28 30 32 34 36 38 40 42 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 920 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270101m-900-gr2a -65 -55 -45 -35 -25 -15 24 26 28 30 32 34 36 38 40 42 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 940 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270101m-900-gr2b 5 -65 -55 -45 -35 -25 -15 24 26 28 30 32 34 36 38 40 42 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 960 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270101m-900-gr2c Typical RF Performance, 920 – 960 MHz (cont.)

Data Sheet 11 of 22 Rev. 04.1, 2016-07-26 PTFC270101M -45 -35 -25 -15 24 26 28 30 32 34 36 38 40 42 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW

920 IMDL

920 IMDU

940 IMDL

940 IMDU

960 IMDL

960 IMDU

Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 120 mA

960 MHz

940 MHz

920 MHz

Typical RF Performance, 920 – 960 MHz (cont.) -30 -25 -20 -15 -10 750 850 950 1050 1150 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Performance Gain & Input Return Loss VDD = 28 V, IDQ = 120 mA Input Return Loss Gain c270101m-900-gr6_v2 24 28 32 36 40 44 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 920 MHz c270101m-900-gr5a Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V

Data Sheet 12 of 22 Rev. 04.1, 2016-07-26 Broadband Circuit Impedance Z Source Z Load G S DFreq [MHz] Z Source  Z Load  Rj XRj X 920 2.5 3.8 16.3 3.0 940 2.5 4.0 16.3 3.2 960 2.5 4.3 16.3 3.4 Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [ Zl [] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [] Gain [dB] POUT [dBm] POUT [W] PAE [%] Typical RF Performance, 920 – 960 MHz (cont.) Load Pull Performance 24 28 32 36 40 44 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 940 MHz c270101m-900-gr5b Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V 24 28 32 36 40 44 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 960 MHz Gain Efficiency c270101m-900-gr5c VDD = 24 V VDD = 28 V VDD = 32 V

Data Sheet 13 of 22 Rev. 04.1, 2016-07-26 PTFC270101M Assembly diagram for reference circuit LTN/PTFC270101M E4, 900 MHz (not to scale) Reference Circuit, 900 MHz DUT PTFC270101M V1 Reference Circuit No. LTN/PTFC270101M E4 Order Code LTNPTFC270101ME4TOBO1 PCB Rogers RO4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower RF_IN RF_OUT ptfc270101m_CD-900_01-23-15

900 MHZ

PTFC270101M_04 (73)RO4350, .020 R108 C108 C106 C104 R106 DUT VDD VGG C101 C102 R105 R109C109 R101 C110 C103 C105 R110 R102 R103 R104 S1S1 S3S3S2S2 R101 C107

Data Sheet 14 of 22 Rev. 04.1, 2016-07-26 Components Information Component Description Manufacturer P/N C101 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C102 Capacitor, 5.6 pF ATC ATC600F5R6JW250 C103, C104 C105, C110 Capacitor, 56 pF ATC ATC100A560JW250 C106, C108, C109 Capacitor, .001 µF Panasonic ECJ-1VB1H102K C107 Capacitor, 2.2 µF TDK Corporation C3225X7R1H225K250AB R101, R102, R103, R104, R110 Resistor, 10 ohms Panasonic – ECG ERJ-3GEYJ100V R105, R108 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R106 Resistor, 1.1K ohms Panasonic Electronic Components ERJ-8GEYJ112V R107 Resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ122V R109 Resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V S1 Potentiometer, 2k ohms Bourns Inc. 3224W-1-202E S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Transistor Infineon Technologies BCP56-10 Reference Circuit, 900 MHz (cont.) See next page for 2600 MHz operation

Data Sheet 15 of 22 Rev. 04.1, 2016-07-26 PTFC270101M RF Characteristics Two-carrier WCDMA Characteristics (not subject to production test) VDD = 28 V, IDQ = 120 mA, POUT = 1.3 W avg, ƒ1 = 2650 MHz, ƒ2 = 2660 MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G ps — 18.2 — dB Drain Efﬁ ciency D — 19.7 — % Intermodulation Distortion IMD — –45 — dBc Typical RF Performance, 2620 – 2690 MHz (data taken in production test fixture) 24 27 30 33 36 39 42 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270101m-2.6-gr1a 0 24 27 30 33 36 39 42 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2655 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270101m-2.6-gr1b

Data Sheet 16 of 22 Rev. 04.1, 2016-07-26 24 27 30 33 36 39 42 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270101m-2.6-gr1c Typical RF Performance, 2620 – 2690 MHz (cont.) -65 -55 -45 -35 -25 -15 24 27 30 33 36 39 42 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270101m-2.6-gr2a -65 -55 -45 -35 -25 -15 24 27 30 33 36 39 42 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2655 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270101m-2.6-gr2b -65 -55 -45 -35 -25 -15 24 27 30 33 36 39 42 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270101m-2.6-gr2c

Data Sheet 17 of 22 Rev. 04.1, 2016-07-26 PTFC270101M -65 -55 -45 -35 -25 -15 24 27 30 33 36 39 42 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW

2620 IMDL 2620 IMDU

2655 IMDL 2655 IMDU

2690 IMDL 2690 IMDU

c270101m-2.6-gr3 Typical RF Performance, 2620 – 2690 MHz (cont.) 24 28 32 36 40 44 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 120 mA Gain Efficiency c270101m-2.6-gr4

2620 MHz

2655 MHz

2690 MHz

Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 2655 MHz Gain Efficiency c270101m-2.6-gr5b 32 V 28 V 24 V 24 28 32 36 40 44 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 2620 MHz Gain Efficiency c270101m-2.6-gr5a 32 V 28 V 24 V

Data Sheet 18 of 22 Rev. 04.1, 2016-07-26 Broadband Circuit Impedance Z Source Z Load G S D Freq [MHz] Z Source  Z Load  Rj XRj X Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [] Zl [] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [] Gain [dB] POUT [dBm] POUT [W] PAE [%] Typical RF Performance, 2620 – 2690 MHz (cont.) Load Pull Performance -15 -10 2500 2550 2600 2650 2700 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Performance Gain & Input Return Loss VDD = 28 V, IDQ = 120 mA Gain Input Return Loss c270101m-2.6-gr6_v2 24 28 32 36 40 44 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 2690 MHz Gain Efficiency c270101m-2.6-gr5c 32 V 28 V 24 V

Data Sheet 19 of 22 Rev. 04.1, 2016-07-26 PTFC270101M Assembly diagram for reference circuit LTN/PTFC270101M E3, 2600 MHz (not to scale) Reference Circuit, 2620 – 2690 MHz DUT PTFC270101M V1 Reference Circuit No. LTN/PTFC270101M E3 Order Code LTNPTFC270101ME3TOBO1 PCB Rogers RO4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower C102 C106 C101 C103 C104 C105 R102 C110 C109 C107 C108 R106 R103 R105 R101 R104 RF_IN RF_OUT ptfc270101m_CD-2600_01-23-15

2600 MHZ

PTFC270101M_03_A (73)RO4350, .020 DUT VDDVGG S3S3 S1S1 S2S2

Data Sheet 20 of 22 Rev. 04.1, 2016-07-26 Components Information Component Description Manufacturer P/N C101, C102, C103 Capacitor, 0.001 µF Panasonic ECJ-1VB1H102K C104, C108, C109 Capacitor, 12 pF ATC ATC600S120JW250 C105 Capacitor, 2.2 µF TDK Corporation C3225X7R1H225K250AB C106 Capacitor, 1 pF ATC ATC600S1R0CW250 C107 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C110 Capacitor, 0.3 pF ATC ATC600S0R3CW250 R101, R103 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R102 Resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ122V R104 Resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V R105 Resistor, 470 ohms Panasonic Electronic Components ERJ-8GEYJ471V R106 Resistor, 10 ohms Panasonic Electronic Components ERJ-3GEYJ100V S1 Potentiometer, 2k ohms Bourns Inc. 3224W-1-202E S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Transistor Infineon Technologies BCP56-10 Reference Circuit, 2620 – 2690 MHz (cont.)

Data Sheet 21 of 22 Rev. 04.1, 2016-07-26 PTFC270101M Package Outline Specifications Package PG-SON-10 7239,(: ,1'(; 0$5.,1* %277209,(: >@3/$&(6 >@3/$&(6 >@3/$&(6 ,1'(; 0$5.,1* >@3/$&(6 6,'(9,(: >@%27+6,'(6 3*621BSRBB Diagram Notes—unless otherwise speciﬁ ed: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.10 [0.004]. 5. Pins: 1 – 5, gate; 6 – 10, drain; S (bottom side metallization) – source. 6. Gold plating thickness: 0.025 – 0.127 micron [1 – 5 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@inﬁ neon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 22 of 22 Rev. 04.1, 2016-07-26 Edition 2016-07-26 Published by Inﬁ neon Technologies AG

85579 Neubiberg, Germany

© 2013 Inﬁ neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Inﬁ neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Inﬁ neon Technologies Ofﬁ ce ( www.inﬁ neon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Inﬁ neon Technologies Ofﬁ ce. Inﬁ neon Technologies components may be used in life-support devices or systems only with the express written approval of In- ﬁ neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTFC270101M V1

Revision History

Revision Date Data Sheet Page Subjects (major changes in each revision) 01 2013-03-05 Advance all Proposed speciﬁ cation for new product development. 02 2013-06-10 Advance 2 Lower maximum junction temperature spec, add thermal resistance. 02.1 2013-06-25 Advance 2 Rev. 02.1 reverts junction temperature back to 200°C 03 2014-12-17 Production all Complete production-released product information, including typical performance graphs and reference circuits for 2100 MHz, 900 MHz and 2600 MHz operation. Maximum Operating Voltage added, maximum V GS revised. Maximum junction temperature raised to 225 °C. ESD ratings clariﬁ ed. 04 2015-04-01 Production 5, 10, Corrected IDQ in Small Signal CW Performance graphs 04.1 2016-07-26 Production 3 Add ordering information for additional evaluation boards.

Product Information

PTFC270101MV1R1K specifications and overview.

Summary

High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26

Description

High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26

Source title PTFC270101MV1R1K Datasheet(PDF) - Infineon Technologies AG

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