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Technical content
Features
Unmatched Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Effi ciency = 62% Typical CW performance, 2170 MHz, 28 V - Output power (P 1dB) = 7.3 W - Gain = 20.3 dB - Effi ciency = 60% Typical CW performance, 2655 MHz, 28 V - Output power (P 1dB) = 7.3 W - Gain = 19.9 dB - Effi ciency = 59.5% Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power Integrated ESD protection: Human Body Model Class 1A (per JESD22-A114) Pb-free and RoHS compliant High Power RF LDMOS Field Effect Transistor
5 W, 28 V, 900 – 2700 MHz
Description
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifi er applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, effi ciency and linearity performance in a small overmolded plastic package. RF Characteristics, 2170 MHz CW Specifi cations (tested in Infi neon test fi xture) VDD = 28 V, IDQ = 65 mA, POUT = 5 W, ƒ1 = 2110 MHz, ƒ2 = 2170 MHz Characteristic Symbol Min Typ Max Unit Gain G ps 18.5 19.5 — dB 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270051m-gr1.3
2110 MHz
2140 MHz
2170 MHz
Data Sheet 2 of 14 Rev. 01.1, 2016-07-26 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V( BR)DSS 65 — — V Drain Leakage Current V DS = 60 V, VGS = 0 V I DSS — — 1 µA Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1 µA On-State Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 2 — Operating Gate Voltage V DS = 28 V, IDQ = 65 mA V GS 2.2 2.7 3.2 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS –6 to +10 V Operating Voltage V DD 0 to +32 V Junction Temperature T J 225 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (TCASE 70°C, 5.5 W CW) R JC 3.84 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit
3 IPC/JEDEC J-STD-020 260 °C
Ordering Information
Type Order Code Package and Description Shipping PTFC270051M V2 R1K PTFC270051MV2R1KXUMA1 PG-SON-10, molded plastic, SMD Tape & Reel, 1000 pcs Evaluation Boards Order Code Frequency Description LTN/PTFC270051M V2 2110 – 2170 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270051M E3 2620 – 2690 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270051M E4 920 – 960 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270051M E5 1930 – 1990 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270051M E6 1805 – 1880 MHz Class AB with combined outputs, R04360, 0.508 mm thick Find Gerber fi les for these reference fi xtures on the Infi neon Web site at www.infi neon.com/rfpower
Data Sheet 3 of 14 Rev. 01.1, 2016-07-26 PTFC270051M Typical Performance, 2170 MHz (data taken in a production test fixture) -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2110 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2100-gr4 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2140 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2100-gr5 RF Characteristics, 2170 MHz Two-carrier WCDMA Specifi cations (not subject to production test—verifi ed by design/characterization in Infi neon test fi xture) VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 2157.5 MHz, ƒ2 = 2167.5 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G ps — 21 — dB Drain Effi ciency D — 21.5 — % Intermodulation Distortion IMD — –35.5 — dBc
Data Sheet 4 of 14 Rev. 01.1, 2016-07-26 Typical Performance, 2170 MHz (cont.) 22 24 26 28 30 32 34 36 38 40 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 65 mA, ƒ = 2170 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c270051m-2100-gr11 22 24 26 28 30 32 34 36 38 40 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 65 mA Efficiency Gain c270051m-2100-gr8 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2100-gr6 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW
2110 IMD Low 2110 IMD Up
2140 IMD Low 2140 IMD Up
2170 IMD Low 2170 IMD Up
Data Sheet 5 of 14 Rev. 01.1, 2016-07-26 PTFC270051M -30 -25 -20 -15 -10 2000 2050 2100 2150 2200 2250 2300 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 65 mA IRL Gain c270051m-2100-gr12 Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [ Zl [ Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [ Gain [dB] PAE [%] POUT [dBm] POUT [W] Load Pull Performance Z Source Z Load G S D Broadband Circuit Impedance, 2170 MHz Freq [MHz] Z Source Z Load Rj XRj X 2110 1.5 –2.6 9.5 5.4 2140 1.5 –2.7 8.7 5.5 2170 1.5 –2.9 7.7 5.6 Typical Performance, 2170 MHz (cont.)
Data Sheet 6 of 14 Rev. 01.1, 2016-07-26 Reference Circuit, 2170 MHz DUT PTFC270051M Test Fixture Part No. LTN/PTFC270051M V2 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 Find Gerber fi les for this test fi xture on the Infi neon Web site at (http://www.infi neon.com/rfpower) Components Information Component Description Supplier P/N C101 Chip capacitor, 1 pF ATC ATC600S1R0BI250X C102 Chip capacitor, 2.2 µF TDK Corporation C4532X7R1H225M160KA C103 Chip capacitor, 12 pF ATC ATC600S120BT250X C201 Chip capacitor, 1.1 pF ATC ATC600S1R1BT250X C202 Chip capacitor, 12 pF ATC ATC600S120BT250X C203 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C204 Chip capacitor, 12 pF ATC ATC600S120BT250X R101, R102 Resistor, 10 Panasonic ERJ-8GEYJ100V Production test circuit assembly diagram (not to scale) RF_OUT R101 PTFC270051M_06 RF_IN c270051M_cd_10-16-13 VDD RO4350, .020 (169) R102 C204 C101 C103 C102 C202 C203 C201
2100 MHz
Data Sheet 7 of 14 Rev. 01.1, 2016-07-26 PTFC270051M RF Characteristics, 940 MHz Two-carrier WCDMA Specifi cations (not subject to production test—verifi ed by design/characterization in Infi neon test fi xture) VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 935 MHz, ƒ2 = 945 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G ps — 24 — dB Drain Effi ciency D — 20.7 — % Intermodulation Distortion IMD — –42 — dBc Typical Performance, 940 MHz 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270051m-900-gr1.3
920 MHz
940 MHz
960 MHz
-55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW
920 IMDL 920 IMDU
940 IMDL 940 IMDU
960 IMDL 960 IMDU
Data Sheet 8 of 14 Rev. 01.1, 2016-07-26 Reference Circuit, 940 MHz (cont.) -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 920 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-900-gr4 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 960 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-900-gr6 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 940 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low ACPR IMD Up Efficiency c270051m-900-gr5 21 25 29 33 37 41 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 65 mA Efficiency Gain
Data Sheet 9 of 14 Rev. 01.1, 2016-07-26 PTFC270051M Typical Performance, 940 MHz (cont.) Broadband Circuit Impedance Freq [MHz] Z Source Z Load Rj XRj X 920 3.3 10 25.6 13.2 940 3.4 10.2 24.7 13.3 960 3.5 10.3 24.3 14.7 Loadpull Performance Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [ Zl [ Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [ Gain [dB] PAE [%] POUT [dBm] POUT [W] -24 -20 -16 -12 750 800 850 900 950 1000 1050 1100 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 65 mA IRL Gain c270051m-900-gr12 Z Source Z Load G S D 22 24 26 28 30 32 34 36 38 40 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltages IDQ = 65 mA, ƒ = 960 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c270051m-900-gr9
Data Sheet 10 of 14 Rev. 01.1, 2016-07-26 Typical Performance, 2655 MHz RF Characteristics, 2655 MHz Two-carrier WCDMA Specifi cations (not subject to production test—verifi ed by design/characterization in Infi neon test fi xture) VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 2650 MHz, ƒ2 = 2660 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G ps — 20.9 — dB Drain Effi ciency D — 19 — % Intermodulation Distortion IMD — –40 — dBc 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270051m-2600-gr1.3
2620 MHz
2655 MHz
2690 MHz
-45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW
2620 IMD Low
2620 IMD Up
2655 IMD Low
2655 IMD Up
2690 IMD Low
2690 IMD Up
Data Sheet 11 of 14 Rev. 01.1, 2016-07-26 PTFC270051M Typical Performance, 2655 MHz (cont.) -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2655 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2600-gr5 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2690 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2600-gr6 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2600-gr4 22 24 26 28 30 32 34 36 38 40 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 65 mA Efficiency Gain c270051m-2600-gr8
Data Sheet 12 of 14 Rev. 01.1, 2016-07-26 Typical Performance, 2655 MHz (cont.) Load Pull Performance Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [ Zl [ Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [ Gain [dB] PAE [%] POUT [dBm] POUT [W] Z Source Z Load G S D Broadband Circuit Impedance Freq [MHz] Z Source Z Load Rj XRj X 2490 1.5 –4.1 7.2 1.5 2590 1.5 –4.6 6.6 0.7 22 26 30 34 38 42 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltages IDQ = 65 mA, ƒ = 2690 MHz Gain Efficiency c270051m-2600-gr11 VDD = 24 V VDD = 28 V VDD = 32 V -30 -25 -20 -15 -10 2590 2640 2690 2740 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 65 mA IRL Gain c270051m-2600-gr12
Data Sheet 13 of 14 Rev. 01.1, 2016-07-26 PTFC270051M Package Outline Specifications Package PG-SON-10 7239,(: ,1'(; 0$5.,1* %277209,(: >@3/$&(6 >@3/$&(6 >@3/$&(6 ,1'(; 0$5.,1* >@3/$&(6 6,'(9,(: >@%27+6,'(6 3*621BSRBB Diagram Notes—unless otherwise specifi ed: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.10 [0.004]. 5. Pins: 1 – 5, gate; 6 – 10, drain; S (bottom side metallization), source. 6. Gold plating thickness: 0.025 – 0.127 micron [1 – 5 microinch]. Find the latest and most complete information about products and packaging at the Infi neon Internet page http://www.infi neon.com/rfpower)
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infi neon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 14 of 14 Rev. 01.1, 2016-07-26 Edition 2016-07-26 Published by Infi neon Technologies AG
85579 Neubiberg, Germany
© 2015 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce ( www.infi neon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTFC270051M V2
Revision History
Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2015-03-20 Production All Specifi cations and performance represent released product. 01.1 2016-07-26 Production 2 Add ordering information for additional evaluation boards.