PTFC270051M CREE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 14

Technical content

Features

  • Unmatched
  • Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Efficiency = 62%
  • Typical CW performance, 2170 MHz, 28 V - Output power (P1dB) = 7.3 W - Gain = 20.3 dB - Efficiency = 60%
  • Typical CW performance, 2655 MHz, 28 V - Output power (P 1dB) = 7.3 W - Gain = 19.9 dB - Efficiency = 59.5%
  • Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power
  • Integrated ESD protection: Human Body Model Class 1A (per JESD22-A114)
  • Pb-free and RoHS compliant High Power RF LDMOS Field Effect Transistor

5 W, 28 V, 900 – 2700 MHz

Description

The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. RF Characteristics, 2170 MHz CW Specifications (tested in Wolfspeed test fixture) VDD = 28 V, IDQ = 65 mA, POUT = 5 W, ƒ1 = 2110 MHz, ƒ2 = 2170 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18.5 19.5 — dB 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270051m-gr1.3

2110 MHz

2140 MHz

2170 MHz

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 2PTFC270051M DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 60 V, VGS = 0 V IDSS — — 1 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 2 — W Operating Gate Voltage VDS = 28 V, IDQ = 65 mA VGS 2.2 2.7 3.2 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE 70°C, 5.5 W CW) RqJC 3.84 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit

3 IPC/JEDEC J-STD-020 260 °C

Ordering Information

Type Order Code Package and Description Shipping PTFC270051M V2 R1K PTFC270051M-V2-R1K PG-SON-10, molded plastic, SMD Tape & Reel, 1000 pcs Evaluation Boards Order Code Frequency Description LTN/PTFC270051M V2 2110 – 2170 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270051M E3 2620 – 2690 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270051M E4 920 – 960 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270051M E5 1930 – 1990 MHz Class AB with combined outputs, R04360, 0.508 mm thick LTN/PTFC270051M E6 1805 – 1880 MHz Class AB with combined outputs, R04360, 0.508 mm thick Find Gerber files for these reference fixtures on the Wolfspeed Web site at www.wolfspeed.com/RF

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 3PTFC270051M Typical Performance, 2170 MHz (data taken in a production test fixture) -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2110 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2100-gr4 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2140 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2100-gr5 RF Characteristics, 2170 MHz Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Wolfspeed test fixture) VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 2157.5 MHz, ƒ2 = 2167.5 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 21 — dB Drain Efficiency hD — 21.5 — % Intermodulation Distortion IMD — –35.5 — dBc

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 4PTFC270051M Typical Performance, 2170 MHz (cont.) 22 24 26 28 30 32 34 36 38 40 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 65 mA, ƒ = 2170 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c270051m-2100-gr11 22 24 26 28 30 32 34 36 38 40 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 65 mA Efficiency Gain c270051m-2100-gr8 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2100-gr6 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW

2110 IMD Low 2110 IMD Up

2140 IMD Low 2140 IMD Up

2170 IMD Low 2170 IMD Up

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 5PTFC270051M -30 -25 -20 -15 -10 2000 2050 2100 2150 2200 2250 2300 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 65 mA IRL Gain c270051m-2100-gr12 Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Load Pull Performance Z Source Z Load G S D Broadband Circuit Impedance, 2170 MHz Freq [MHz] Z Source W Z Load W R jX R jX 2110 1.5 –2.6 9.5 5.4 2140 1.5 –2.7 8.7 5.5 2170 1.5 –2.9 7.7 5.6 Typical Performance, 2170 MHz (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 6PTFC270051M Reference Circuit, 2170 MHz DUT PTFC270051M Test Fixture Part No. LTN/PTFC270051M V2 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF) Components Information Component Description Supplier P/N C101 Chip capacitor, 1 pF ATC ATC600S1R0BI250X C102 Chip capacitor, 2.2 µF TDK Corporation C4532X7R1H225M160KA C103 Chip capacitor, 12 pF ATC ATC600S120BT250X C201 Chip capacitor, 1.1 pF ATC ATC600S1R1BT250X C202 Chip capacitor, 12 pF ATC ATC600S120BT250X C203 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C204 Chip capacitor, 12 pF ATC ATC600S120BT250X R101, R102 Resistor, 10 W Panasonic ERJ-8GEYJ100V Production test circuit assembly diagram (not to scale) RF_OUT R101 PTFC270051M_06 RF_IN c 2 7 0 0 5 1 M _ c d _ 1 0 - 1 6 - 1 3 VDD RO4350, .020 (169) R102 C204 C101 C103 C102 C202 C203 C201

2100 MHz

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 7PTFC270051M RF Characteristics, 940 MHz Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Wolfspeed test fixture) VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 935 MHz, ƒ2 = 945 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 24 — dB Drain Efficiency hD — 20.7 — % Intermodulation Distortion IMD — –42 — dBc Typical Performance, 940 MHz 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270051m-900-gr1.3

920 MHz

940 MHz

960 MHz

-55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW

920 IMDL 920 IMDU

940 IMDL 940 IMDU

960 IMDL 960 IMDU

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 8PTFC270051M Reference Circuit, 940 MHz (cont.) -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 920 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-900-gr4 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 960 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-900-gr6 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 940 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low ACPR IMD Up Efficiency c270051m-900-gr5 21 25 29 33 37 41 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 65 mA Efficiency Gain

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 9PTFC270051M Typical Performance, 940 MHz (cont.) Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jX R jX 920 3.3 10 25.6 13.2 940 3.4 10.2 24.7 13.3 960 3.5 10.3 24.3 14.7 Loadpull Performance Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] -24 -20 -16 -12 750 800 850 900 950 1000 1050 1100 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 65 mA IRL Gain c270051m-900-gr12 Z Source Z Load G S D 22 24 26 28 30 32 34 36 38 40 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltages IDQ = 65 mA, ƒ = 960 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c270051m-900-gr9

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 10PTFC270051M Typical Performance, 2655 MHz RF Characteristics, 2655 MHz Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Wolfspeed test fixture) VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 2650 MHz, ƒ2 = 2660 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 20.9 — dB Drain Efficiency hD — 19 — % Intermodulation Distortion IMD — –40 — dBc 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c270051m-2600-gr1.3

2620 MHz

2655 MHz

2690 MHz

-45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW

2620 IMD Low

2620 IMD Up

2655 IMD Low

2655 IMD Up

2690 IMD Low

2690 IMD Up

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 11PTFC270051M Typical Performance, 2655 MHz (cont.) -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2655 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2600-gr5 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2690 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2600-gr6 -65 -55 -45 -35 -25 -15 22 24 26 28 30 32 34 36 38 40 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c270051m-2600-gr4 22 24 26 28 30 32 34 36 38 40 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 65 mA Efficiency Gain c270051m-2600-gr8

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 12PTFC270051M Typical Performance, 2655 MHz (cont.) Load Pull Performance Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Z Source Z Load G S D Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jX R jX 2490 1.5 –4.1 7.2 1.5 2590 1.5 –4.6 6.6 0.7 22 26 30 34 38 42 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltages IDQ = 65 mA, ƒ = 2690 MHz Gain Efficiency c270051m-2600-gr11 VDD = 24 V VDD = 28 V VDD = 32 V -30 -25 -20 -15 -10 2590 2640 2690 2740 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 65 mA IRL Gain c270051m-2600-gr12

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-06-20 13PTFC270051M Package Outline Specifications Package PG-SON-10 Diagram Notes–unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.1 [0.004] unless specified otherwise. 5. Pins: S = Source, 1-5 = Gate, 6-10 = Drain. 6. NiPdAu plating (gold top layer) : 0.025 – 0.127 micron[1 – 5 microinch]. TOP VIEW 4.00 [.157] 4.00 [.157] INDEX MARKING BOTTOM VIEW 5 4 3 2 1 6 7 8 9 10 5X .515 [.0203] 2 PLACES 2.37 [.093] 0.54 [.021] 2 PLACES 5X .320 [.0126] 2 PLACES .815 [.0321] 0.30 [.012] 3.40 [.134] INDEX MARKING 4X 0.65 [.026] 2 PLACES 2.97 [.117] S SIDE VIEW 0.38 [.015] BOTH SIDES 1.42 [.056] 0.05 [.002] PG-SON-10_po_02_12-07-2012 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.10 [0.004]. 5. Pins: 1 – 5, gate; 6 – 10, drain; S (bottom side metallization), source. 6. Gold plating thickness: 0.025 – 0.127 micron [1 – 5 microinch].

www.wolfspeed.comRev. 02, 2018-06-20 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTFC270051M

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2015-03-20 Production All Specifications and performance represent released product. 01.1 2016-07-26 Production 2 Add ordering information for additional evaluation boards. 02 2018-06-20 Production All Converted to Wolfspeed Data Sheet