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Broadband internal matching Typical CW pulsed performance, 2620 MHz, 28 V - Output power at P1dB = 280 W - Effi ciency = 52% - Gain = 18 dB Typical 1-carrier WCDMA performance, 2655 MHz, 28 V - Output power at P 1dB = 56 W avg. - Effi ciency = 24% - Gain = 18.0 dB Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance RoHS-compliant Capable of handling 10:1 VSWR at 28 V, 280 W (CW) ouput power RF Characteristics Single-carrier WCDMA Specifi cations (tested in Infi neon production test fi xture) VDD = 28 V, IDQ = 1800 mA, POUT = 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G ps 16.5 18.0 — dB Drain Efficiency ηD 22 24 — % Adjacent Channel Power Ratio ACPR — –33 –30 dBc 38 40 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c262808sv-gr1
Data Sheet 2 of 8 Rev. 02.1, 2013-08-02
Ordering Information
Type and Version Order Code Package and Description Shipping PTFC 262808SV V1 R250 PTFC262808SVV1R250XTMA1 H-37275G-6/2, ceramic open-cavity, formed leads, earless Tape & Reel, 250 pcs DC Characteristics (single side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V (BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 1.0 µA V DS = 63 V, VGS = 0 V I DSS — — 10.0 µA On-State Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 0.05 — Ω Operating Gate Voltage V DS = 28 V, IDQ = 1.45 A V GS — 2.65 — V Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS –6 to +10 V Operating Voltage V DD 0 to +32 V Junction Temperature T J 200 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) R θJC 0.20 °C/W
Data Sheet 3 of 8 Rev. 02.1, 2013-08-02 PTFC262808SV Typical Performance (data taken in a reference design fixture) -50 -45 -40 -35 -30 -25 -20 38 40 42 44 46 48 50 52 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IM3L IM3U ACPR Eff c262808sv-gr2 -45 -40 -35 -30 -25 -20 38 40 42 44 46 48 50 52 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW c262808sv-gr3
2620 MHz
2655 MHz
2690 MHz
Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance VDD = 28 V, IDQ = 1.8 A Efficiency Gain -40 -35 -30 -25 -20 -15 -10 2300 2400 2500 2600 2700 2800 2900 3000 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Pulsed CW Performance (gain and input return loss) VDD = 28 V, IDQ = 650 mA IRL Gain c262808sv-gr7
Data Sheet 4 of 8 Rev. 02.1, 2013-08-02 Typical Performance (cont.) 42 44 46 48 50 52 54 56 Efficiency (%) Power Gain (dB) Output Power (dBm) Pulsed CW Performance at selected supply voltages IDQ = 1800 mA, ƒ = 2690 MHz VDD = 32 V VDD = 28 V VDD = 24 V Gain Efficiency c 262808sv-gr6 Z Source Z Load G D G S D Broadband Circuit Impedance Frequency Z Source Z Load MHz R jX R jX 2620 2.07 –2.45 0.69 –4.22 2655 1.98 –2.39 0.68 –4.19 2690 1.91 –2.33 0.66 –4.08
Data Sheet 5 of 8 Rev. 02.1, 2013-08-02 PTFC262808SV Component Information Component Description Suggested Manufacturer P/N Input C101, C102, C107, C108 Chip capacitor, 18 pF ATC ATC800A180JW250X C103, C104 Capacitor, 10 µF Murata Electronics North America LLL31BC70G106MA01L C105 Chip capacitor, 0.4 pF ATC ATC100B0R4CW150X C106 Chip capacitor, 0.7 pF ATC ATC100B0R7CW150X C801, C802, C803 Chip capacitor, 1,000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R102 Resistor, 10 Ω Panasonic Electronic Components ERJ-3GEYJ100V (table cont. next page) Reference circuit assembly diagram (not to scale) Reference Circuit, tuned for 2620 – 2690 MHz DUT PTFC262808SV Test Fixture Part No. LTN/PTFC262808SV V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber fi les for this test fi xture on the Infi neon Web site at (http://www.infi neon.com/rfpower) R107 c282808sv_cd_6-28-13 +C205 C202 RF_OUT VDD VDD C103 C106 R101R104 C108 C105 RF_IN C204 C206 C201 C209 C210 C208 C207 R103 C803 C107 S1 C802 C101 R108 C102 C801 C104 R109 R102 R803 R802 R801 RO4350, .020 (60)RO4350, .020 (60) R804 PTFC262808SV_IN_1A PTFC262808SV_OUT_01 C211 C212 C203 PTFC262808SV
Data Sheet 6 of 8 Rev. 02.1, 2013-08-02 Component Information (cont.) Component Description Suggested Manufacturer P/N Input (cont.) R103, R104 Resistor, 10 Ω Panasonic Electronic Components ERJ-8GEYJ100V R107, R109 Resistor, 0.0 Ω Panasonic Electronic Components ERJ-8GEY0R00V R108 Resistor, 0.0 Ω Panasonic Electronic Components ERJ-3GEY0R00V R801 Resistor, 1 Ω Panasonic Electronic Components ERJ-8GEYJ1R0V R802 Resistor, 1k Ω Panasonic Electronic Components ERJ-8GEYJ102V R803 Resistor, 1.3k Ω Panasonic Electronic Components ERJ-3GEYJ132V R804 Resistor, 1.2k Ω Panasonic Electronic Components ERJ-3GEYJ122V S1 Potentiometer, 2k Ω Bourns Inc. 3224W-1-202E S2 Transistor Infi neon Technologies BCP56-10 S3 Voltage regulator Fairchild Semiconductor LM7805 Output C201, C204 Chip capacitor, 0.2 pF ATC ATC100B0R2BW150X C202, C206, C207, C208, C209, C210 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C203, C212 Chip capacitor, 18 pF ATC ATC800A180JW250X C205, C211 Capacitor, 220 µF , 35 V Panasonic Electronic Components EEE-FP1V221AP Reference Circuit (cont.) Pinout Diagram Pin Description V1, V2 V DD G1, G2 Gate D1, D2 Drain S Source (fl ange) S V2V1 D2D1 G1 G2
Data Sheet 7 of 8 Rev. 02.1, 2013-08-02 PTFC262808SV Diagram Notes—unless otherwise specifi ed: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [0.005]. 4. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V1, V2 – V DD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. Find the latest and most complete information about products and packaging at the Infi neon Internet page http://www.infi neon.com/rfpower) Package Outline Specifications Package H-37275G-6/2 >@ +*BJZBSRBB * * '9 ' &//& ; [ >@ 63+''** 63+99
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infi neon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFC262808SV V1 Page Subjects (major changes since last revision) Data Sheet 8 of 8 Rev. 02.1, 2013-08-02 Edition 2013-08-02 Published by Infi neon Technologies AG
85579 Neubiberg, Germany
© 2012 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce ( www.infi neon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Revision History: 2013-08-02 Data Sheet Previous Version: 2013-07-24, Data Sheet; 2012-08-09, Advance Specifi cation all Product released to production, information complete and current. 1, 2, 6 Typos corrected.