PTFC262808FV CREE | Alldatasheet

Document overview

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Technical content

Features

  • Broadband internal matching
  • T ypical 1-carrier WCDMA performance, 2655 MHz,

28 V, 10 dB PAR

  • Output power at P 1dB = 56 W avg. - Efficiency = 24% - Gain = 18 dB - ACPR = –33 dBc @ 3.84 MHz
  • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • RoHS-compliant
  • Capable of handling 10:1 VSWR at 28 V, 280 W (CW) ouput power PTFC262808FV Package H-37275G-6/2 30 34 38 42 46 50 54 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c262808fv-gr1 RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) VDD = 28 V, IDQ = 1800 mA, POUT = 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 18.0 — dB Drain Efficiency hD 22 24 — % Adjacent Channel Po wer Ratio ACPR — –33 –30 dBc PTFC262808FV not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-03 2PTFC262808FV

Ordering Information

Type and Version Order Code Package and Description Shipping PTFC262808FV V1 R0 PTFC262808FV-V1-R0 H-37275G-6/2, ceramic open-cavity, earless T ape & Reel, 50 pcs PTFC262808FV V1 R250 PTFC262808FV-V1-R250 H-37275G-6/2, ceramic open-cavity, earless T ape & Reel, 250 pcs DC Characteristics (single side) Characteristic Conditions Symbol Min T yp Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Dr ain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 1800 mA VGS — 2.6 — V Maximum Ratings Parameter Symbol V alue Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Oper ating Voltage VDD 0 to +32 V J unction Temperature TJ 225 °C Stor age Temperature Range TSTG –65 to +150 °C Ther mal Resistance (TCASE = 70°C, 200 W CW) RqJC 0.20 °C/W not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-03 3PTFC262808FV Typical Performance (data taken in Wolfspeed production test fixture) -50 -45 -40 -35 -30 -25 -20 30 34 38 42 46 50 54 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c262802fv-gr2 -45 -35 -25 -15 30 34 38 42 46 50 54 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW c262802fv -gr3

2620 MHz

2655 MHz

2690 MHz IMD Up

Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance VDD = 28 V, IDQ = 1.8 A Efficiency Gain

2690 MHz

-30 -25 -20 -15 -10 2450 2550 2650 2750 2850 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Pulsed CW Performance Gain & Input Return Loss, single side VDD = 28 V, IDQ = 650 mA IRL Gain c262802fv-gr6 not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-03 4PTFC262808FV Z Source Z Load G D G S D Broadband Circuit Impedance 36 40 44 48 52 56 Efficiency (%) Power Gain (dB) Output Power (dBm) Pulsed CW Performance at selected VDD IDQ = 1800 mA, ƒ = 2690 MHz VDD = 32 V VDD = 28 V VDD = 24 V Gain Efficiency c262802fv -gr5 Typical Performance (cont.) Frequency Z Sour ce W Z Load W MHz R jX R jX 2620 2.88 –1.58 0.55 –2.45 2655 2.99 –1.55 0.53 –2.39 2690 3.10 –1.52 0.52 –2.33 not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-03 5PTFC262808FV Component Information Component Description Suggested Manufacturer P/N Input C101, C102 Chip capacitor, 10 pF ATC ATC100A100JW500XB C103, C104 Chip capacitor, 18 pF ATC ATC100A180JW150XB C105, C106 Chip capacitor, 0.4 pF ATC ATC100B0R4CW500XB C107, C108 Capacitor, 10 µF Murata Electronics North America LLL31BC70G106MA01L C801, C802, C803 Chip capacitor, 1,000 pF Panasonic ECJ-1VB1H102K R101, R102 Resistor, 10 W Panasonic Electronic Components ERJ-3GEYJ100V (table cont. next page) Reference circuit assembly diagram (not to scale) Reference Circuit, tuned for 2620 – 2690 MHz DUT PTFC262808FV T est Fixture Part No. LTN/PTFC262808FV V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF) PTFC262808FV_OUT_02 RO4350, .020 (60)RO4350, .020 (60) PTFC262808FV_IN_02 C103 C107 C101 R103 C104 C205 R101 C202 R102 C108 C802 C208 C201 C203 C206 C209 C207 R105 RF_IN VDD VDD C102 C801 R804R801 R104 R802 R803 RF_OUT C204 c 2 8 2 8 0 8 f v _ c d _ 7 - 1 9 - 1 3 C105 C106 PTFC262808FV not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-03 6PTFC262808FV Component Information (cont.) Component Description Suggested Manufacturer P/N Input (cont.) R102, R103, R104, R801, R802 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R803 Resistor, 1.3k W Panasonic Electronic Components ERJ-3GEYJ132V R804 Resistor, 1.2k W Panasonic Electronic Components ERJ-3GEYJ122V S1 Potentiometer, 2k W Bourns Inc. 3224W-1-202E S2 Transistor Infineon Technologies BCP56-10 S3 Voltage regulator Fairchild Semiconductor LM7805 Output C201 Chip capacitor, 18 pF ATC ATC100B180KW500XB C202, C206 Capacitor, 470 µF , 50 V Cornell Dubilier Electronics (CDE) SEK471M050ST C203, C204, C205, C207, C208, C209 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T Reference Circuit (cont.) Lead connections for PTFC262808FV Pinout Diagram (top view) Pin

Description

V1, VDD G1, G2 Gate D1, D2 Dr ain S Source (flange) V2V1 D2D1 G1 G2 S not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-03 7PTFC262808FV Package Outline Specifications Package H-37275G-6/2 Diagram Notes—unless otherwise specified: 1. Inter pret dimensions and tolerances per ASME Y14.5M-1994. 2. Pr imary dimensions are mm. Alternate dimensions are inches. 3. All toler 4. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V1, V2 – VDD. 5. Lead thic 6. Gold plating thic kness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. (1.63 [0.064]) 4.58+0.25-0.13 [.180+.010-.005 ] 32.26 [1.270] 31.24±0.28 [1.230±.011] CL S SPH 2.134 [.084] 2X 45° x .64 [.025] 2X 2.29 [.090] (13.72 [.540]) 2X 2.22 [.087] 30.61 [1.205] 2X (1.27 [.050]) 2X 30° LC CLLC 4X R0.51+.38-.13 [R.020+.015-.005 ] 4X 12.45 [.490] CL G1 G2 D2D1V1 2X 26.16 [1.030] (18.24 [.718]) 10.16 [.400] 6X 4.04±0.51 [.159±.020] 9.14 [.360] D not recommended for new design

www.wolfspeed.comRev. 04, 2018-07-03 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTFC262802FV

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-09-14 Advance All New product, proposed only. 02 2013-07-24 Data Sheet All Product released to production. All information updated. 02.1 2013-08-02 Data Sheet 2 Order Code for Tape and Reel corrected. 02.2 2013-08-06 Data Sheet 2 Order Code for Tray corrected. 03 2016-06-22 Data Sheet 2 Operating Gate Voltage conditions corrected, maximum junction temperature raised to 225 °C, update ordering information 04 2018-07-03 Production All Converted to Wolfspeed Data Sheet. Not recommended for new design not recommended for new design