PTFC262157FHV1R0

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Document overview

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• PDF pages: 10

Technical content

Features

• Broadband internal matching, optimized for Doherty peak side
• Wide video bandwidth
• Typical single-carrier WCDMA performance, 2690 MHz, 28 V, 10 dB PAR @ 0.01% CCDR - Output power at P1dB = 50 W - Efficiency = 29% - Gain = 19.5 dB - ACPR = –31.5 dBc at 2690 MHz
• Capable of handling 10:1 VSWR @ 28 V,

180 W (CW) output power

• Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant Thermally-Enhanced High Power RF LDMOS FET

200 W, 28 V, 2620 – 2690 MHz

Description

The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum performance as the peak side transistor in a Doherty amplifier. Other features include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262157FH Package H-34288G-4/2 RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 1150 mA, POUT = 50 W average, ƒ = 2690 MHz, 3GPP WCDMA signal, 3.84 MHz bandwidth,10 dB PAR @0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 18.0 19.5 — dB Drain Efficiency hD 27 29 — % Adjacent Channel Power Ratio ACPR — –31.5 –30 dBc 32 36 40 44 48 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1200 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c262157sh-gr1

Data Sheet 2 of 10 Rev. 03.1, 2016-06-21 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 1.1 A VGS — 2.65 — V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) RqJC 0.34 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PTFC262157FH V1 R0 PTFC262157FHV1R0XTMA1 H-34288G-4/2, ceramic open-cavity, earless T ape & Reel, 50 pcs PTFC262157FH V1 R250 PTFC262157FHV1R250XTMA1 H-34288G-4/2, ceramic open-cavity, earless T ape & Reel, 250 pcs

Data Sheet 3 of 10 Rev. 03.1, 2016-06-21 PTFC262157FH 32 36 40 44 48 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1200 mA, ƒ = 2655 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c262157sh-gr2 -50 -40 -30 -20 32 36 40 44 48 52 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1200 mA, ƒ = 2655 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c262157sh-gr5 Typical Performance (data taken in a reference test fixture) 32 36 40 44 48 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1200 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency c262157sh-gr3 -50 -40 -30 -20 32 36 40 44 48 52 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1200 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c262157sh-gr4

Data Sheet 4 of 10 Rev. 03.1, 2016-06-21 -40 -30 -20 -10 2450 2550 2650 2750 2850 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 1200 mA IRL Gain c262157sh-gr12 Typical Performance (cont.) -50 -40 -30 -20 32 36 40 44 48 52 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1200 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency c262157sh-gr6 -40 -35 -30 -25 -20 30 34 38 42 46 50 54 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1200 mA, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW c262157sh-gr7

2620 MHz

2655 MHz

2690 MHz

34 36 38 40 42 44 46 48 50 52 54 56 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 1200 mA Efficiency Gain

Data Sheet 5 of 10 Rev. 03.1, 2016-06-21 PTFC262157FH 34 36 38 40 42 44 46 48 50 52 54 56 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 1200 mA, ƒ = 2655 MHz Gain Efficiency c262157sh-gr10 VDD = 24 V VDD = 28 V VDD = 32 V c262157sh-gr11 34 36 38 40 42 44 46 48 50 52 54 56 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 1200 mA, ƒ = 2690 MHz Gain Efficiency c262157sh-gr11 VDD = 24 V VDD = 28 V VDD = 32 V c262157sh-gr12 Typical Performance (cont.) 34 36 38 40 42 44 46 48 50 52 54 56 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 1200 mA, ƒ = 2620 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency c262157sh-gr9

Data Sheet 6 of 10 Rev. 03.1, 2016-06-21 Load Pull Performance Z Source Z Load G S D Broadband Circuit Impedance Frequency [MHz] Z Source [W] Z Load [W] 2585 2.23 – 4.85 4.41 – 3.07 2620 2.18 – 4.70 4.43 – 3.13 2655 2.13 – 4.56 4.44 – 3.18 2690 2.08 – 4.42 4.43 – 3.25 2725 2.04 – 4.28 4.41 – 3.31 Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 1100 mA P1dB Class AB Max Output Power Max PAE Z Optimum Freq [MHz] Zs [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 50 mA P1dB Class B Max Output Power Max PAE Z Optimum Freq [MHz] Zs [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [W] Gain [dB] PAE [%] POUT [dBm] POUT [W]

Data Sheet 7 of 10 Rev. 03.1, 2016-06-21 PTFC262157FH Component Information Component Description Suggested Manufacturer P/N Input C101 Chip capacitor, 1.7 pF ATC ATC100A1R7CW150XB C102 Chip capacitor, 10 pF ATC ATC100B100JW500XB C103, C104 Chip capacitor, 4.7 µF Nichicon F931C475MAA C105, C106 Chip capacitor, 10 pF ATC ATC100A100JW500XB C801, C802, C803 Capacitor, 1k pF Panasonic Electronic Components ECJ-1VB1H102K (table cont. next page) Reference circuit assembly diagram (not to scale) Reference Circuit, tuned for 2620 – 2690 MHz DUT PTFC262157FH Test Fixture Part No. LTN/PTFC262157FH V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at (http://www.infineon.com/rfpower) C802 C801R801 RF_IN VDD RF_OUT c 2 6 2 1 5 7 f h _ c d _ 8 - 8 - 1 3 R802 R804 C803 R803S3 R105 R101 R102C106 C203 C211 C212 C207 C201 C206 C208 C210 C204 C209 C213 C205 C214 C202 C101C102 R103 C105C103 C104 R104 RO4350, .020 (60) RO4350, .020 (60) PTFC262157_IN_01 PTFC262157_OUT_01 A VDD VDD PTFC262157FH

Data Sheet 8 of 10 Rev. 03.1, 2016-06-21 Component Information (cont.) Component Description Suggested Manufacturer P/N Input (cont.) R101, R802 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R102, R103, R104 Resistor, 10 W Panasonic Electronic Components ERJ-3GEYJ100V R105 Resistor, 5.1k W Panasonic Electronic Components ERJ-8GEYJ512V R801 Resistor, 100 W Panasonic Electronic Components ERJ-8GEYJ101V R803 Resistor, 1.2k W Panasonic Electronic Components ERJ-3GEYJ122V R804 Resistor, 1.2k W Panasonic Electronic Components ERJ-3GEYJ132V S1 Transistor Infineon Technologies BCP56-10 S2 Voltage regulator Fairchild Semiconductor LM7805 S3 Potentiometer, 2k W Bourns Inc. 3224W-1-202E Output C201 Chip capacitor, 0.6 ATC ATC100A0R6CW150XB C202, C204 Capacitor, 2.2 µF , 50 V Panasonic Electronic Components EEE-FP1V221AP C203, C206 Chip capacitor, 12 pF ATC ATC100A120JW150XB C205, C212 Capacitor, 10 µF Garrett Electronics 281M5002106K C207, C209 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C208 Chip capacitor, 0.5 pF ATC ATC100A0R5CW150XB C210, C211 Chip capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C213, C214 Chip capacitor, 2.2 µF TDK Corporation C4532X7R1H225M160KA Reference Circuit (cont.)

Data Sheet 9 of 10 Rev. 03.1, 2016-06-21 PTFC262157FH Package Outline Specifications Package H-34288G-4/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D – drain, S – source, G – gate, V – drain voltage (VDD). 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information tabout products and packaging at the Infineon Internet page (www.infineon.com/rfpower) Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. 2X 2.29 [.090] 1.98 [.078] 21.72 [.855] 30.0° 4X R0.51+.38 -.13 [R.020+.015 -.005 ] 2X 17.75 [.699] CL CL CL 45° x .64 [.025] G D VV 16.76±0.51 [.660±.020]9.78 [.385] 4X 3.49±0.51 [.138±.020] CL 9.40 [.370] D 4.04+0.25 -0.13 [.159+.010 -.005 ] SPH 1.57 [.062] 1.02 [.040] 23.11 [.910] S 22.35±0.20 [.880±.008]

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 10 of 10 Rev. 03.1, 2016-06-21 Edition 2016-06-21 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTFC262157FH V1

Revision History

Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2012-08-07 Advance all Proposed specification for new product development. 02 2013-08-08 Production all Data Sheet reflects released product specifications 03 2014-04-14 Production 2 Maximum junction temperature raised to 225 °C. 03.1 2016-06-21 Production 2 Updated ordering information