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Technical content
Features
Broadband internal matching Wide video bandwidth Typical pulsed CW performance, 2655 MHz, 28 V (combined outputs) - Output power at P 1dB = 140 W - Effi ciency = 50% - Gain = 16.5 dB Typical single-carrier WCDMA performance, 2655 MHz, 28 V - Output power = 46 dBm avg - Gain = 17.5 dB - Effi ciency = 30.5% Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power Integrated ESD protection Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifi cations (combined outputs, tested in Infi neon production test fi xture) VDD = 28 V, IDQ = 900 mA, POUT = 28 W avg, ƒ = 2655 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G ps 17 18 — dB Drain Efficiency D 23.5 25 — % Adjacent Channel Power Ratio ACPR — –34 –31 dBc -60 -40 -20 33 38 43 48 53 Efficiency (%) Peak/Average (dB), Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
PAR @ 0.01% CCDF c261402fc_gr1
Data Sheet 2 of 10 Rev. 05, 2016-06-21 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V (BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 1 µA V DS = 63 V, VGS = 0 V I DSS — — 10 µA Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1 µA On-State Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 0.1 — Operating Gate Voltage V DS = 28 V, IDQ = 900 mA V GS — 2.5 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS –6 to +10 V Operating Voltage V DD 0 to +32 V Junction Temperature T J 225 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 140 W CW) R JC 0.30 °C/W
Ordering Information
Type and Version Order Code Package and Description Shipping PTFC261402FC V1 R0 PTFC261402FCV1R0XTMA1 Thermally-enhanced earless fl ange, push-pull Tape & Reel, 50 pcs PTFC261402FC V1 R250 PTFC261402FCV1R250XTMA1 Thermally-enhanced earless fl ange, push-pull Tape & Reel, 250 pcs Pinout Diagram Lead connections for PTFC261402FC S D1 D2 G1 G2 Pin Description D1, D2 Drain G1, G2 Gate S Source (fl ange)
Data Sheet 3 of 10 Rev. 05, 2016-06-21 PTFC261402FC Typical Performance (data taken in a production test fixture) -60 -40 -20 33 38 43 48 53 Efficiency (%) Peak/Average (dB), Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2655 MHz 3GPP WCDMA signal, 7.5 dB PAR, PAR @ 0.01% CCDF c261402fc_g r2 -60 -40 -20 33 38 43 48 53 Efficiency (%) Peak/Average (dB), Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2690 MHz 3GPP WCDMA signal, 7.5 dB PAR, PAR @ 0.01% CCDF c261402fc_gr3 -60 -50 -40 -30 -20 -10 33 38 43 48 53 Drain Efficiency(%) ACPR (dB) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 900 mA, 3GPP WCDMA signal, 7.5 dB PAR, c261402fc_gr5
2620 MHz
2655 MHz
2690 MHz
DrainEfficiency(%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 50 dBm, 3GPP WCDMA signal, 7.5 dB PAR Efficiency Gain c261402fc_gr8
Data Sheet 4 of 10 Rev. 05, 2016-06-21 Typical Performance (cont.) -30 -25 -20 -15 -10 -30 -25 -20 -15 -10 2570 2610 2650 2690 2730 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 50 dBm, 3GPP WCDMA signal, 7.5 dB PAR Return Loss ACP Up c 261402fc_gr9 -30 -25 -20 -15 -10 -30 -25 -20 -15 -10 2570 2610 2650 2690 2730 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 49 dBm, 3GPP WCDMA signal, 7.5 dB PAR Return Loss ACP Up c261402fc_gr11 37 2570 2610 2650 2690 2730 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 48 dBm, 3GPP WCDMA signal, 7.5 dB PAR Efficiency Gain c261402fc_gr12 2570 2610 2650 2690 2730 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 49 dBm, 3GPP WCDMA signal, 7.5 dB PAR Efficiency Gain c261402fc_gr10
Data Sheet 5 of 10 Rev. 05, 2016-06-21 PTFC261402FC Typical Performance (cont.) 33 35 37 39 41 43 45 47 49 51 53 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 900 mA Efficiency Gain c261402fc_gr14 34 36 38 40 42 44 46 48 50 52 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at selected VDD, (single side) IDQ = 900 mA, ƒ = 2620 MHz VDD = 32 V VDD = 28 V VDD = 24 V Gain Efficiency c261402fc_gr15 34 36 38 40 42 44 46 48 50 52 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at selected VDD, (single side) IDQ = 900 mA, ƒ = 2655 MHz VDD = 32 V VDD = 28 V VDD = 24 V Gain Efficiency c261402fc_gr16 -30 -25 -20 -15 -10 -30 -25 -20 -15 -10 2570 2610 2650 2690 2730 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 48 dBm, 3GPP WCDMA signal, 7.5 dB PAR Return Loss ACP Up c261402fc_gr13
Data Sheet 6 of 10 Rev. 05, 2016-06-21 Load Pull Performance Single Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 450 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs Zl Gain [dB] P OUT [dBm] POUT [W] PAE % Zl Gain [dB] P OUT [dBm] POUT [W] PAE % Z Source Z Load G D G S D Typical Performance (cont.) 34 36 38 40 42 44 46 48 50 52 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at selected VDD, (single side) IDQ = 900 mA, ƒ = 2690 MHz VDD = 32 V VDD = 28 V VDD = 24 V VDD = 32 V VDD = 28 V VDD = 24 V Gain Efficiency c261402f c_gr17 -35 -30 -25 -20 -15 -10 2540 2580 2620 2660 2700 2740 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss, single side VDD = 28 V, IDQ = 900 mA IRL Gain c261402fc_gr19
Data Sheet 7 of 10 Rev. 05, 2016-06-21 PTFC261402FC Reference Circuit C211 R803 RF_OUT C205 C210 R101 R104 C212 C201 C102 R103 C801C803 R805 C103 C209 C207 PTFC261402_OUT_01 RF_IN C208 C203 C804 C104 C208 R103 C204 R802C802 C101 C202 PTFC261402_IN_01 c261402fc_cd_1-30-13 R804 R04350, .020 (60)R04350, .020 (60) VDD VDD VDD PTFC261402FC DUT PTFC261402FC Test Fixture Part No. LTN/PTFC261402FC PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 Find Gerber fi les for this test fi xture on the Infi neon Web site at (http://www.infi neon.com/rfpower) Reference circuit assembly diagram (not to scale)
Data Sheet 8 of 10 Rev. 05, 2016-06-21 Components Information Component Description Suggested Supplier P/N Input C101, C104 Chip capacitor, 10 pF ATC ATC800A100JT C102, C103 Capacitor, 10 µF Murata Electronics North America LLL31BC70G106MA01L C801, C802, C803 Capacitor, 1 nF Panasonic ECJ-1VB1H102K L1, L2 Chip inductor, 47 nH Coilcraft 0603HP-47NXJLU R101, R102 Resistor, 10 W Panasonic Electronic Components ERJ-3GEYJ100V R103, R104 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R801, R804 Resistor, 1k W Panasonic Electronic Components ERJ-8GEYJ102V R802 Resistor, 1.3k W Panasonic Electronic Components ERJ-3GEYJ132V R803 Resistor, 1.2k W Panasonic Electronic Components ERJ-3GEYJ122V S1, S2 High frequency EMI fi lter, 1 µF Murata Electronics North America NFM18PS105R0J3D S3 Potentiometer, 2k Bourns Inc. 3224W-1-202E S4 Voltage Regulator National Semiconductor LM7805 S5 Transistor Infi neon Technologies BCP56 Output C201, C202, C203, C210 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C204, C208 Electrolytic capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP C205, C206 Chip capacitor, 1 pF ATC ATC800A1R2BT C206, C211 Chip capacitor, 2 pF ATC ATC800A1R6BT C207 Chip capacitor, 8 pF ATC ATC800A8R2CT C209, C212 Chip capacitor, 10 pF ATC ATC800A100JT Reference Circuit (cont.)
Data Sheet 9 of 10 Rev. 05, 2016-06-21 PTFC261402FC Package Outline Specifications Package H-37248-4 Find the latest and most complete information about products and packaging at the Infi neon Internet page (http://www.infi neon.com/rfpower) Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. >@ /,' )/$1*( >@ 63+ @' ' * * >@6 ;; >;@ >@ +BSRBB >@ $
Infi neon Technologies AG
85579 Neubiberg, Germany
© 2011 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce ( www.infi neon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infi neon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 10 of 10 Rev. 05, 2016-06-21 PTFC261402FC V1
Revision History
Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2011-11-10 Advance All Data Sheet refl ects advance specifi cation for product development. 02 2012-04-27 Preliminary 1, 2 Specifi cations updated. 03 2012-06-01 Advance all Reformat to Advance Specifi cation—Marketing survey only. 04 2014-02-14 Production all Data Sheet refl ects released product specifi cation. 05 2016-06-21 Production 1 Added ESD rating Maximum junction temperature raised to 225 °C, updated ordering info.