DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
Broadband internal matching Wide video bandwidth Typical pulsed CW performance, 2655 MHz, 28 V (combined outputs) - Output power at P 1dB = 140 W - Effi ciency = 50% - Gain = 16.5 dB Typical single-carrier WCDMA performance, 2655 MHz, 28 V - Output power = 46 dBm avg - Gain = 17.5 dB - Effi ciency = 30.5% Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power Integrated ESD protection Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifi cations (combined outputs, tested in Wolfspeed production test fi xture) VDD = 28 V, IDQ = 900 mA, POUT = 28 W avg, ƒ = 2655 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G ps 17 18 — dB Drain Efficiency D 23.5 25 — % Adjacent Channel Power Ratio ACPR — –34 –31 dBc -60 -40 -20 33 38 43 48 53 Efficiency (%) Peak/Average (dB), Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
PAR @ 0.01% CCDF c261402fc_gr1 PTFC261402FC
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-07-03 PTFC261402FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V (BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 1 µA V DS = 63 V, VGS = 0 V I DSS — — 10 µA Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1 µA On-State Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 0.1 — Operating Gate Voltage V DS = 28 V, IDQ = 900 mA V GS — 2.5 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS –6 to +10 V Operating Voltage V DD 0 to +32 V Junction Temperature T J 225 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 140 W CW) R JC 0.30 °C/W
Ordering Information
Type and Version Order Code Package and Description Shipping PTFC261402FC V1 R0 PTFC261402FC-V1-R0 Thermally-enhanced earless fl ange, push-pull Tape & Reel, 50 pcs PTFC261402FC V1 R250 PTFC261402FC-V1-R250 Thermally-enhanced earless fl ange, push-pull Tape & Reel, 250 pcs Pinout Diagram Lead connections for PTFC261402FC S D1 D2 G1 G2 Pin Description D1, D2 Drain G1, G2 Gate S Source (fl ange)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-07-03 3PTFC261402FC Typical Performance (data taken in a production test fixture) -60 -40 -20 33 38 43 48 53 Efficiency (%) Peak/Average (dB), Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2655 MHz 3GPP WCDMA signal, 7.5 dB PAR, PAR @ 0.01% CCDF c261402fc_g r2 -60 -40 -20 33 38 43 48 53 Efficiency (%) Peak/Average (dB), Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2690 MHz 3GPP WCDMA signal, 7.5 dB PAR, PAR @ 0.01% CCDF c261402fc_gr3 -60 -50 -40 -30 -20 -10 33 38 43 48 53 Drain Efficiency(%) ACPR (dB) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 900 mA, 3GPP WCDMA signal, 7.5 dB PAR, c261402fc_gr5
2620 MHz
2655 MHz
2690 MHz
DrainEfficiency(%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 50 dBm, 3GPP WCDMA signal, 7.5 dB PAR Efficiency Gain c261402fc_gr8
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-07-03 PTFC261402FC Typical Performance (cont.) -30 -25 -20 -15 -10 -30 -25 -20 -15 -10 2570 2610 2650 2690 2730 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 50 dBm, 3GPP WCDMA signal, 7.5 dB PAR Return Loss ACP Up c 261402fc_gr9 -30 -25 -20 -15 -10 -30 -25 -20 -15 -10 2570 2610 2650 2690 2730 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 49 dBm, 3GPP WCDMA signal, 7.5 dB PAR Return Loss ACP Up c261402fc_gr11 37 2570 2610 2650 2690 2730 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 48 dBm, 3GPP WCDMA signal, 7.5 dB PAR Efficiency Gain c261402fc_gr12 2570 2610 2650 2690 2730 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 49 dBm, 3GPP WCDMA signal, 7.5 dB PAR Efficiency Gain c261402fc_gr10
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-07-03 5PTFC261402FC Typical Performance (cont.) 33 35 37 39 41 43 45 47 49 51 53 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 900 mA Efficiency Gain c261402fc_gr14 34 36 38 40 42 44 46 48 50 52 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at selected VDD, (single side) IDQ = 900 mA, ƒ = 2620 MHz VDD = 32 V VDD = 28 V VDD = 24 V Gain Efficiency c261402fc_gr15 34 36 38 40 42 44 46 48 50 52 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at selected VDD, (single side) IDQ = 900 mA, ƒ = 2655 MHz VDD = 32 V VDD = 28 V VDD = 24 V Gain Efficiency c261402fc_gr16 -30 -25 -20 -15 -10 -30 -25 -20 -15 -10 2570 2610 2650 2690 2730 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 48 dBm, 3GPP WCDMA signal, 7.5 dB PAR Return Loss ACP Up c261402fc_gr13
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-07-03 PTFC261402FC Load Pull Performance Single Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 450 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs Zl Gain [dB] P OUT [dBm] POUT [W] PAE % Zl Gain [dB] P OUT [dBm] POUT [W] PAE % Z Source Z Load G D G S D Typical Performance (cont.) 34 36 38 40 42 44 46 48 50 52 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at selected VDD, (single side) IDQ = 900 mA, ƒ = 2690 MHz VDD = 32 V VDD = 28 V VDD = 24 V VDD = 32 V VDD = 28 V VDD = 24 V Gain Efficiency c261402f c_gr17 -35 -30 -25 -20 -15 -10 2540 2580 2620 2660 2700 2740 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss, single side VDD = 28 V, IDQ = 900 mA IRL Gain c261402fc_gr19
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-07-03 7PTFC261402FC Reference Circuit DUT PTFC261402FC Test Fixture Part No. LTN/PTFC261402FC PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 Find Gerber fi les for this test fi xture on the Wolfspeed Web site at (www.wolfspeed.com/RF) C211 R803 RF_OUT C205 C210 R101 R104 C212 C201 C102 R103 C801C803 R805 C103 C209 C207 PTFC261402_OUT_01 RF_IN C208 C203 C804 C104 C208 R103 C204 R802C802 C101 C202 PTFC261402_IN_01 c261402fc_cd_1-30-13 R804 R04350, .020 (60)R04350, .020 (60) VDD VDD VDD PTFC261402FC Reference circuit assembly diagram (not to scale)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-07-03 PTFC261402FC Components Information Component Description Suggested Supplier P/N Input C101, C104 Chip capacitor, 10 pF ATC ATC800A100JT C102, C103 Capacitor, 10 µF Murata Electronics North America LLL31BC70G106MA01L C801, C802, C803 Capacitor, 1 nF Panasonic ECJ-1VB1H102K L1, L2 Chip inductor, 47 nH Coilcraft 0603HP-47NXJLU R101, R102 Resistor, 10 W Panasonic Electronic Components ERJ-3GEYJ100V R103, R104 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R801, R804 Resistor, 1k W Panasonic Electronic Components ERJ-8GEYJ102V R802 Resistor, 1.3k W Panasonic Electronic Components ERJ-3GEYJ132V R803 Resistor, 1.2k W Panasonic Electronic Components ERJ-3GEYJ122V S1, S2 High frequency EMI fi lter, 1 µF Murata Electronics North America NFM18PS105R0J3D S3 Potentiometer, 2k Bourns Inc. 3224W-1-202E S4 Voltage Regulator National Semiconductor LM7805 S5 Transistor Infi neon Technologies BCP56 Output C201, C202, C203, C210 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C204, C208 Electrolytic capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP C205, C206 Chip capacitor, 1 pF ATC ATC800A1R2BT C206, C211 Chip capacitor, 2 pF ATC ATC800A1R6BT C207 Chip capacitor, 8 pF ATC ATC800A8R2CT C209, C212 Chip capacitor, 10 pF ATC ATC800A100JT Reference Circuit (cont.)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-07-03 9PTFC261402FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. >@ /,' )/$1*( >@ 63+ @' ' * * >@6 ;; >;@ >@ +BSRBB >@ $
www.wolfspeed.comRev. 06, 2018-07-03 Notes Disclaimer Specifi cations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in diff erent applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolf speed logo are trademarks of Cree, Inc. For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 10PTFC261402FC
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2011-11-10 Advance All Data Sheet refl ects advance specifi cation for product development. 02 2012-04-27 Preliminary 1, 2 Specifi cations updated. 03 2012-06-01 Advance All Reformat to Advance Specifi cation—Marketing survey only. 04 2014-02-14 Production All Data Sheet refl ects released product specifi cation. 05 2016-06-21 Production 1 Added ESD rating Maximum junction temperature raised to 225 °C, updated ordering info. 06 2018-07-03 Production All Converted to Wolfspeed Data Sheet.