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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- Broadband input matching
- Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency = 57% - Linear Gain = 19.4 dB
- Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power
- Integrated ESD protection
- Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2615 MHz, ƒ2 = 2625 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 19 20 — dB Drain Efficiency hD 27.5 30 — % Intermodulation Distortion IMD — –31.5 –30 dBc 30 31 32 33 34 35 36 37 38 39 40 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz Efficiency Gain
Data Sheet 2 of 9 Rev. 03.3, 2016-06-21 PTFC260202FC DC Characteristics (single side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V( BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V R DS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 1.35 A V GS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 25 W CW) RqJC 2.2 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping PTFC260202FC V1 R0 PTFC260202FCV1R0XTMA1 H-37248-4, earless flange Tape & Reel, 50 pcs PTFC260202FC V1 R250 PTFC260202FCV1R250XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs
Data Sheet 3 of 9 Rev. 03.3, 2016-06-21 Typical Performance (data taken in a production test fixture) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 30 31 32 33 34 35 36 37 38 39 40 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz IMD Low IMD Up ACPR Efficiency -40 -35 -30 -25 -20 -15 -10 2480 2520 2560 2600 2640 2680 2720 Gain (dB) / Efficiency (%) Frequency (MHz) Single-carrier WCDMA 3GGP Broadband VDD = 28 V, IDQ = 0.17 A, POUT = 4 W, PAR = 10 dB Gain Efficiency IRL ACPR IMD (dBc) / ACPR (dBc) 35 36 37 38 39 40 41 42 43 44 45 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz Efficiency Gain -40 -35 -30 -25 -20 30 31 32 33 34 35 36 37 38 39 40 IMD (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
2690 Upper
2690 Lower
2496 Upper
2496 Lower
Data Sheet 4 of 9 Rev. 03.3, 2016-06-21 PTFC260202FC Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 2495 25.5 –18.0 8.4 –11.1 2533 24.7 –17.9 8.3 –11.2 2570 24.0 –17.8 8.3 –11.3 2620 23.1 –17.6 8.0 –11.4 2655 22.5 –17.4 7.9 –11.5 2690 22.0 –17.1 7.6 –11.6 Reference Circuit Reference circuit input schematic for ƒ = 2680 MHz TL101 TL102TL103 TL104 TL105 TL106TL107TL108 TL109 TL110 TL111 C101 15 pF TL112 R101
10 Ohm
1.2 pF TL130 C105 15 pF C106 15 pF C107 10000000 pF C108 220000 pF TL131 TL132 TL133 RF_IN R103
4.7 Ohm
c 2 6 0 2 0 2 f c _ b d i n _ 0 9 - 1 3 - 2 0 1 2 GATE_DUT Pin G1 GATE_DUT Pin G2 εr = 3.66 H = 30 mil RO/RO4350 Z Source Z Load S
Data Sheet 5 of 9 Rev. 03.3, 2016-06-21 Reference Circuit Reference circuit output schematic for ƒ = 2680 MHz TL201 TL202 TL203 TL204 TL205 TL206 1 2 TL207 TL208 C201 15 pF C202 1.6 pF 3TL209 1 2 TL210 C203 1 pF 3TL211 TL212 TL213 TL214 TL215 TL216 TL217 TL218 C204 10000000 pF C205 15 pF C206 1.6 pF C207 1 pF C208 100000000 pF TL219 C209 100000000 pF 1 2 TL220 TL221 C210 10000000 pF TL222 1 2 TL223 TL224 TL225 TL226 R201
100 Ohm
c 2 6 0 2 0 2 f c _ b d o u t _ 0 9 - 1 3 - 2 0 1 2 RF_OUT Drain_DUT Pin D1 Drain_DUT Pin D2 εr = 3.66 H = 30 mil RO/RO4350
Data Sheet 6 of 9 Rev. 03.3, 2016-06-21 PTFC260202FC Reference Circuit (cont.) Reference circuit assembly diagram (not to scale) RO4350, .020 (61) C102 R102 C101 C103 C104 C105 C106 C109 R103 C107 C108 R101 R104 RF_IN PTFC260202F_IN_02 c 2 6 0 2 0 2 f c _ C D _ 0 9 - 1 3 - 2 0 1 2 PTFC260202F_OUT_01 RF_OUT RO4350, .020 (105) C201 C205 C202 C210 C203 C206 C204 C207 R201 C208 C209 VDD VDD VGS VGS
Data Sheet 7 of 9 Rev. 03.3, 2016-06-21 Components Information Component Description Suggested Manufacturer P/N Input C101, C105, C106, C109 Chip capacitor, 15 pF ATC ATC800A150GT250X C102, C108 Capacitor, 220000 pF Digi-Key 445-1814-2-ND C103, C107 Chip capacitor, 10 µF Digi-Key 587-1818-2-ND C104 Chip capacitor, 1.2 pF ATC ATC800A1R2GT250X R101, R102 Resistor, 10 W Digi-Key P10ECT-ND R103, R104 Resistor, 4.7 W Digi-Key P4.7ECT-ND Output C201, C205 Chip capacitor, 15 pF ATC ATC800A150GT250X C202, C206 Chip capacitor, 1.6 pF ATC ATC800A1R6BT250X C203, C207 Chip capacitor, 1 pF ATC ATC800A1R0BT250X C204, C210 Chip capacitor, 10 µF Digi-Key 587-1818-2-ND C208, C209 Capacitor, 100 µF Digi-Key P5571-ND R201 Resistor, 100 W Digi-Key CR11206T0100J Reference Circuit (cont.) Reference Circuit Assembly DUT PTFC260202FC Test Fixture Part No. LTN/PTFC260202FC PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2680 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Pinout Diagram (top view) Lead connections for PTFC260202FC S D1 D2 G1 G2 Pin Description D1 Drain Device 1 D2 Drain Device 2 G1 Gate Device 1 G2 Gate Device 2 S Source (flange)
Data Sheet 8 of 9 Rev. 03.3, 2016-06-21 PTFC260202FC Package Outline Specifications Package H-37248-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-
Data Sheet 9 of 9 Rev. 03.3, 2016-06-21 Edition 2016-06-21 Published by Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFC260202FC V1
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-06-12 Advance All Data Sheet reflects advance specification for product development 02 2012-09-04 Production All Data Sheet reflects released product specification 03 2013-04-05 Production 2 Revised storage temperature range Revised broadband impedance icon Updated package outline 03.1 2013-11-20 Production 1 Revised min efficiency in Two-carrier WCDMA Specification table 03.2 2014-05-14 Production 2 Added operating voltage and revised juntion temperature in Maximum Ratings table 03.3 2016-06-21 Production 1, 2 Added ESD rating and updated ordering information