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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- Input matched
- Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P 1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB
- Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power
- Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114)
- Low thermal resistance
- Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 20 21 — dB Drain Efficiency hD 26.5 29 — % Adjacent Channel Power Ratio ACPR — –31 –28 dBc -60 -40 -20 28 32 36 40 44 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF ptfc210202fc_g1
Data Sheet 2 of 9 Rev. 03.4, 2016-06-22 PTFC210202FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 0.1 µA VDS = 63 V, VGS = 0 V IDSS — — 1.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 0.17 VGS 2.40 2.70 3.05 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 25 W CW) RqJC 2.2 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping PTFC210202FC V1 R0 PTFC210202FCV1R0XTMA1 H-37248-4, earless flange Tape & Reel, 50 pcs PTFC210202FC V1 R250 PTFC210202FCV1R250XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs
Data Sheet 3 of 9 Rev. 03.4, 2016-06-22 Typical Performance (data taken in a production test fixture) -60 -50 -40 -30 -20 -10 28 32 36 40 44 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 170 mA, 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz
2110 ACPL
2140 ACPL
2170 ACPL
2110 ACPU
2140 ACPU
2170 ACPU
2110 EFF
2140 EFF
2170 EFF
ptfc210202fc_g3 -60 -50 -40 -30 -20 -10 28 32 36 40 44 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz Efficiency ACP Up ACP Low ptfc210202fc_g2 -25 -20 -15 -10 -45 -40 -35 -30 -25 1950 2000 2050 2100 2150 2200 2250 2300 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 170 mA, POUT = 36dBm, 3GPP WCDMA signal, PAR = 7.5 dB Return Loss ACP Up ptfc210202fc_g5 15 1950 2000 2050 2100 2150 2200 2250 2300 Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 170 mA, POUT = 36dBm, 3GPP WCDMA signal, PAR = 7.5 dB Efficiency Gain ptfc210202fc_g4
Data Sheet 4 of 9 Rev. 03.4, 2016-06-22 PTFC210202FC Typical Performance (cont.) -30 -25 -20 -15 -10 1790 1890 1990 2090 2190 2290 2390 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss, single side VDD = 28 V, IDQ = 170 mA IRL Gain ptfc210202fc_g8 32 34 36 38 40 42 44 46 48 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 170 mA, ƒ = 2170 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency ptfc210202fc_g7 20 34 36 38 40 42 44 46 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 170mA Efficiency Gain
2110 MHz
2140 MHz
2170 MHz
ptfc210202fc_g6
Data Sheet 5 of 9 Rev. 03.4, 2016-06-22 Each Side Load Pull Performance – CW signal; VDD = 28 V, 85 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Load Pull Performance Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 2110 4.86 –0.01 3.59 –2.65 2120 4.89 –0.01 3.63 –2.65 2130 4.92 –0.01 3.68 –2.66 2140 4.95 –0.01 3.72 –2.68 2150 4.98 –0.02 3.76 –2.69 2160 5.00 –0.02 3.81 –2.71 2170 5.03 –0.03 3.85 –2.73 Z Source Z Load S
Data Sheet 6 of 9 Rev. 03.4, 2016-06-22 PTFC210202FC Reference Circuit Reference circuit assembly diagram (not to scale) PTFC210202FC_IN_02 PTFC210202FC_OUT_02 RO4350, .020 (62)RO4350, .020 (61) RF_IN C101 VDD RF_OUT C107 C104 C102 C106 R101 R102 C108 C103 C105 R201 C203 C202 C209 C210 C201 C207 C206 C208 C204 C205 VDD VGS VGS c 2 1 0 2 0 2 f c _ C D _ 0 3 - 0 8 - 2 0 1 3
Data Sheet 7 of 9 Rev. 03.4, 2016-06-22 Reference Circuit (cont.) Reference Circuit Assembly DUT PTFC210202FC Test Fixture Part No. LTN/PTFC210202FC PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Manufacturer P/N Input C101, C108 Capacitor, 10 μF TDK Corporation C5750X5R1H106K230KA C102, C103 Chip capacitor, 20 pF ATC ATC100A200JW150XB C104, C107 Chip capacitor, 5.1 pF ATC ATC100A5R1CW250XT C105, C106 Chip capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V Output C201, C205 Chip capacitor, 20 pF ATC ATC100A200JW250XT C202, C203, C206, C207 Chip capacitor, 1.6 pF ATC ATC800A1R6BT250XT C204, C210 Chip capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C208, C09 Capacitor, 100 µF Panasonic Electronic Components ECA-1HHG101 R201 Resistor, 10 W ATC CR11206T0100J Pinout Diagram (top view) Lead connections for PTFC210202FC S D1 D2 G1 G2 Pin Description D1 Drain Device 1 D2 Drain Device 2 G1 Gate Device 1 G2 Gate Device 2 S Source (flange)
Data Sheet 8 of 9 Rev. 03.4, 2016-06-22 PTFC210202FC Package Outline Specifications Package H-37248-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-
Data Sheet 9 of 9 Rev. 03.4, 2016-06-22 Edition 2016-06-22 Published by Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFC210202FC V1
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-11-15 Advance All Data Sheet reflects advance specification for product development 02p 2012-12-19 Preliminary All Data Sheet reflects preliminary specification 03 2013-03-11 Production All Data Sheet reflects released product specification 03.1 2013-06-27 Production 1 Classified ESD protection Added operating voltage 03.2 2014-05-14 Production 2 Revised juntion temperature in Maximum Ratings table 03.3 2015-12-23 Production 2 DC Chracteristic table 03.4 2016-06-22 Production 2 Updated ordering information