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Technical content

Features

 Input matched  Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Effi ciency = 62% - Gain = 20.9 dB  Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power  Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114)  Low thermal resistance  Pb-free and RoHS compliantRF Characteristics Single-carrier WCDMA Specifi cations (tested in Infi neon test fi xture) VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain G ps 20 21 — dB Drain Effi ciency D 26.5 29 — % Adjacent Channel Power Ratio ACPR — –31 –28 dBc -60 -40 -20 28 32 36 40 44 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF ptfc210202fc_g1

Data Sheet 2 of 9 Rev. 03.2, 2014-05-14 PTFC210202FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V( BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 1 µA V DS = 63 V, VGS = 0 V I DSS — — 10 µA On-State Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 0.05 —  Operating Gate Voltage V DS = 28 V, IDQ = 0.17 V GS — 2.65 — V Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS –6 to +10 V Operating Voltage V DD 0 to +32 V Junction Temperature T J 225 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 25 W CW) R JC 2.2 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTFC210202FC V1 PTFC210202FCV1XWSA1 H-37248-4, earless fl ange Tray PTFC210202FC V1 R250 PTFC210202FCV1R250XTMA1 H-37248-4, earless fl ange Tape & Reel, 250 pcs

Data Sheet 3 of 9 Rev. 03.2, 2014-05-14 Typical Performance (data taken in a production test fi xture) -60 -50 -40 -30 -20 -10 28 32 36 40 44 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 170 mA, 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz

2110 ACPL

2140 ACPL

2170 ACPL

2110 ACPU

2140 ACPU

2170 ACPU

2110 EFF

2140 EFF

2170 EFF

ptfc210202fc_g3 -60 -50 -40 -30 -20 -10 28 32 36 40 44 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz Efficiency ACP Up ACP Low ptfc210202fc_g2 -25 -20 -15 -10 -45 -40 -35 -30 -25 1950 2000 2050 2100 2150 2200 2250 2300 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 170 mA, POUT = 36dBm, 3GPP WCDMA signal, PAR = 7.5 dB Return Loss ACP Up ptfc210202fc_g5 15 1950 2000 2050 2100 2150 2200 2250 2300 Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 170 mA, POUT = 36dBm, 3GPP WCDMA signal, PAR = 7.5 dB Efficiency Gain ptfc210202fc_g4

Data Sheet 4 of 9 Rev. 03.2, 2014-05-14 PTFC210202FC Typical Performance (cont.) -30 -25 -20 -15 -10 1790 1890 1990 2090 2190 2290 2390 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss, single side VDD = 28 V, IDQ = 170 mA IRL Gain ptfc210202fc_g8 32 34 36 38 40 42 44 46 48 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 170 mA, ƒ = 2170 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency ptfc210202fc_g7 20 34 36 38 40 42 44 46 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 170mA Efficiency Gain

2110 MHz

2140 MHz

2170 MHz

ptfc210202fc_g6

Data Sheet 5 of 9 Rev. 03.2, 2014-05-14 Each Side Load Pull Performance – CW signal; VDD = 28 V, 85 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [] Zl [] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [] Gain [dB] POUT [dBm] POUT [W] PAE [%] Load Pull Performance Broadband Circuit Impedance Frequency Z Source  Z Load  MHz R jX R jX 2110 4.86 –0.01 3.59 –2.65 2120 4.89 –0.01 3.63 –2.65 2130 4.92 –0.01 3.68 –2.66 2140 4.95 –0.01 3.72 –2.68 2150 4.98 –0.02 3.76 –2.69 2160 5.00 –0.02 3.81 –2.71 2170 5.03 –0.03 3.85 –2.73 Z Source Z Load S

Data Sheet 6 of 9 Rev. 03.2, 2014-05-14 PTFC210202FC Reference Circuit Reference circuit assembly diagram (not to scale) PTFC210202FC_IN_02 PTFC210202FC_OUT_02 RO4350, .020 (62)RO4350, .020 (61) RF_IN C101 VDD RF_OUT C107 C104 C102 C106 R101 R102 C108 C103 C105 R201 C203 C202 C209 C210 C201 C207 C206 C208 C204 C205 VDD VGS VGS c210202fc_CD_03-08-2013

Data Sheet 7 of 9 Rev. 03.2, 2014-05-14 Reference Circuit (cont.) Reference Circuit Assembly DUT PTFC210202FC Test Fixture Part No. LTN/PTFC210202FC PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper,  r = 3.66 Find Gerber fi les for this test fi xture on the Infi neon Web site at http://www.infi neon.com/rfpower Components Information Component Description Suggested Manufacturer P/N Input C101, C108 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C102, C103 Chip capacitor, 20 pF ATC ATC100A200JW150XB C104, C107 Chip capacitor, 5.1 pF ATC ATC100A5R1CW250XT C105, C106 Chip capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102 Resistor, 10  Panasonic Electronic Components ERJ-8GEYJ100V Output C201, C205 Chip capacitor, 20 pF ATC ATC100A200JW250XT C202, C203, C206, C207 Chip capacitor, 1.6 pF ATC ATC800A1R6BT250XT C204, C210 Chip capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C208, C09 Capacitor, 100 µF Panasonic Electronic Components ECA-1HHG101 R201 Resistor, 10  ATC CR11206T0100J Pinout Diagram (top view) Lead connections for PTFC210202FC S D1 D2 G1 G2 Pin Description D1 Drain Device 1 D2 Drain Device 2 G1 Gate Device 1 G2 Gate Device 2 S Source (fl ange)

Data Sheet 8 of 9 Rev. 03.2, 2014-05-14 PTFC210202FC Package Outline Specifi cations Package H-37248-4 Find the latest and most complete information about products and packaging at the Infi neon Internet page http://www.infi neon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. >“@ /,' )/$1*( >“@ 63+ @' ' * * >@6 ;ƒ; >ƒ;@ >“@ +BSRBB >@ $

Data Sheet 9 of 9 Rev. 03.2, 2014-05-14 Edition 2014-05-14 Published by Infi neon Technologies AG

85579 Neubiberg, Germany

© 2014 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce ( www.infi neon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infi neon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFC210202FC V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-11-15 Advance All Data Sheet refl ects advance specifi cation for product development 02p 2012-12-19 Preliminary All Data Sheet refl ects preliminary specifi cation 03 2013-03-11 Production All Data Sheet refl ects released product specifi cation 03.1 2013-06-27 Production 1 Classifi ed ESD protection Added operating voltage 03.2 2014-05-14 Production 2 Revised juntion temperature in Maximum Ratings table