PTFC210202FC CREE | Alldatasheet

Document overview

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Technical content

Features

  • Input matched
  • Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P 1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB
  • Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power
  • Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture) VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 20 21 — dB Drain Efficiency hD 26.5 29 — % Adjacent Channel Power Ratio ACPR — –31 –28 dBc -60 -40 -20 28 32 36 40 44 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF ptfc210202fc_g1 PTFC210202FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-29 2PTFC210202FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 0.1 µA VDS = 63 V, VGS = 0 V IDSS — — 1.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 0.17 VGS 2.40 2.70 3.05 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 25 W CW) RqJC 2.2 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTFC210202FC V1 R0 PTFC210202FC-V1-R0 H-37248-4, earless flange Tape & Reel, 50 pcs PTFC210202FC V1 R250 PTFC210202FC-V1-R250 H-37248-4, earless flange Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-29 3PTFC210202FC Typical Performance (data taken in a production test fixture) -60 -50 -40 -30 -20 -10 28 32 36 40 44 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 170 mA, 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz

2110 ACPL

2140 ACPL

2170 ACPL

2110 ACPU

2140 ACPU

2170 ACPU

2110 EFF

2140 EFF

2170 EFF

ptfc210202fc_g3 -60 -50 -40 -30 -20 -10 28 32 36 40 44 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz Efficiency ACP Up ACP Low ptfc210202fc_g2 -25 -20 -15 -10 -45 -40 -35 -30 -25 1950 2000 2050 2100 2150 2200 2250 2300 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 170 mA, POUT = 36dBm, 3GPP WCDMA signal, PAR = 7.5 dB Return Loss ACP Up ptfc210202fc_g5 15 1950 2000 2050 2100 2150 2200 2250 2300 Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 170 mA, POUT = 36dBm, 3GPP WCDMA signal, PAR = 7.5 dB Efficiency Gain ptfc210202fc_g4

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-29 4PTFC210202FC Typical Performance (cont.) -30 -25 -20 -15 -10 1790 1890 1990 2090 2190 2290 2390 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss, single side VDD = 28 V, IDQ = 170 mA IRL Gain ptfc210202fc_g8 32 34 36 38 40 42 44 46 48 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 170 mA, ƒ = 2170 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency ptfc210202fc_g7 20 34 36 38 40 42 44 46 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 170mA Efficiency Gain

2110 MHz

2140 MHz

2170 MHz

ptfc210202fc_g6

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-29 5PTFC210202FC Each Side Load Pull Performance – CW signal; VDD = 28 V, 85 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Load Pull Performance Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 2110 4.86 –0.01 3.59 –2.65 2120 4.89 –0.01 3.63 –2.65 2130 4.92 –0.01 3.68 –2.66 2140 4.95 –0.01 3.72 –2.68 2150 4.98 –0.02 3.76 –2.69 2160 5.00 –0.02 3.81 –2.71 2170 5.03 –0.03 3.85 –2.73 Z Source Z Load S

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-29 6PTFC210202FC Reference Circuit Reference circuit assembly diagram (not to scale) PTFC210202FC_IN_02 PTFC210202FC_OUT_02 RO4350, .020 (62)RO4350, .020 (61) RF_IN C101 VDD RF_OUT C107 C104 C102 C106 R101 R102 C108 C103 C105 R201 C203 C202 C209 C210 C201 C207 C206 C208 C204 C205 VDD VGS VGS c 2 1 0 2 0 2 f c _ C D _ 0 3 - 0 8 - 2 0 1 3

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-29 7PTFC210202FC Reference Circuit (cont.) Reference Circuit Assembly DUT PTFC210202FC Test Fixture Part No. LTN/PTFC210202FC PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF Components Information Component Description Suggested Manufacturer P/N Input C101, C108 Capacitor, 10 μF TDK Corporation C5750X5R1H106K230KA C102, C103 Chip capacitor, 20 pF ATC ATC100A200JW150XB C104, C107 Chip capacitor, 5.1 pF ATC ATC100A5R1CW250XT C105, C106 Chip capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V Output C201, C205 Chip capacitor, 20 pF ATC ATC100A200JW250XT C202, C203, C206, C207 Chip capacitor, 1.6 pF ATC ATC800A1R6BT250XT C204, C210 Chip capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C208, C09 Capacitor, 100 µF Panasonic Electronic Components ECA-1HHG101 R201 Resistor, 10 W ATC CR11206T0100J Pinout Diagram (top view) Lead connections for PTFC210202FC S D1 D2 G1 G2 Pin Description D1 Drain Device 1 D2 Drain Device 2 G1 Gate Device 1 G2 Gate Device 2 S Source (flange)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-29 8PTFC210202FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

www.wolfspeed.comRev. 04, 2018-06-29 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTFC210202FC

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-11-15 Advance All Data Sheet reflects advance specification for product development 02p 2012-12-19 Preliminary All Data Sheet reflects preliminary specification 03 2013-03-11 Production All Data Sheet reflects released product specification 03.1 2013-06-27 Production 1 Classified ESD protection Added operating voltage 03.2 2014-05-14 Production 2 Revised juntion temperature in Maximum Ratings table 03.3 2015-12-23 Production 2 DC Chracteristic table 03.4 2016-06-22 Production 2 Updated ordering information 04 2018-06-29 Production All Converted to Wolfspeed Data Sheet