DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 16

Technical content

Features

  • Broadband internal matching
  • Enhanced for use in DPD error correction systems
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance at

2170 MHz, 30 V

  • P OUT = 49.5 dBm Avg - Gain = 17.5 dB - Efficiency = 30%
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
  • Capable of handling 10:1 VSWR @ 30 V, 300 W (CW) output power
  • Excellent thermal stability
  • Integrated ESD protection
  • Pb-free and RoHS-compliant

Data Sheet 2 of 16 Rev. 05.3, 2016-06-15 PTFB213004F RF Characteristics (cont.) Two-tone Measurements (not subject to production test—verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.4 A, POUT = 250 W PEP , ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 18 — dB Drain Efficiency hD — 37 — % Intermodulation Distortion IMD — –30 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 30 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) — 0.03 — W Operating Gate Voltage VDS = 30 V, IDQ = 2.4 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS –0.5 to +65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C ) RqJC 0.23 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTFB213004F V2 R0 PTFB213004FV2R0XTMA1 H-37275-6/2, earless flange Tape & Reel, 50 pcs PTFB213004F V2 R250 PTFB213004FV2R250XTMA1 H-37275-6/2, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 16 Rev. 05.3, 2016-06-15 PTFB213004F Typical Performance (data taken in a production test fixture) -60 -50 -40 -30 35 39 43 47 51 Intermodulation Distortion (dBc) Output Power, Avg. (dBm) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz BW IM3 Up IM3 Low

2170 MHz

2140 MHz

2110 MHz

Drain Efficiency (%) Gain (db) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.85 MHz BW Efficiency Gain -65 -55 -45 -35 -25 36 40 44 48 52 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power, avg. (dBm) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz BW Efficiency ACPR IMD Up IMD Low -50 -40 -30 -20 -10 2060 2100 2140 2180 2220 Return Loss (dB), IMD (dBc) Gain (dB), Efficiency (%) Frequency (MHz) Two-tone Broadband Performance VDD = 30 V, IDQ = 2.4 A, POUT = 126 W Gain Efficiency Return Loss IMD 3

Data Sheet 4 of 16 Rev. 05.3, 2016-06-15 PTFB213004F -75 -65 -55 -45 -35 -25 -15 39 43 47 51 55 IMD 3rd Order (dBc) Output Power, Avg. (dBm) Two-tone IMD vs. Output Power VDD = 30 V, IDQ = 2.4 A, tone spacing = 1 MHz Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-tone Drive-up (over temp) (POUT max 3rd order IMD @ –30dBc) VDD = 30 V, IDQ = 2.4 A, ƒ1 = 2140.5 MHz, ƒ2 = 2139.5 MHz +25°C +85°C –30°C Efficiency Gain 17.0 17.5 18.0 18.5 19.0 39 43 47 51 55 Drain Efficiency (%) Gain (db) Output Power (dBm) Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz Efficiency Gain -70 -60 -50 -40 -30 -20 38 43 48 53 58 Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz Efficiency IMD 3 Typical Performance (cont.)

Data Sheet 5 of 16 Rev. 05.3, 2016-06-15 PTFB213004F -80 -60 -40 -20 36 40 44 48 52 56 Efficiency (%) / ACP (dBc) PARC, PARC Gain (dB) Output Power, avg. (dBm) Output PAR Compression (PARC), VDD = 30 V, IDQ = 2.4 A, ƒ = 2140 MHz, single-carrier 3GPP WCDMA signal, input PAR = 7.5 dB, 3.84 MHz BW Gain Efficiency PARC @ .01% CCDF ACP -80 -60 -40 -20 36 40 44 48 52 56 Efficiency (%) / ACP (dBc) PARC, PARC Gain (dB) Output Power, avg. (dBm) Output PAR Compression (PARC), VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, single-carrier 3GPP WCDMA signal, input PAR = 7.5 dB, 3.84 MHz BW Gain Efficiency PARC @ .01% CCDF ACP -65 -55 -45 -35 -25 -15 0 10 20 30 40 50 60 70 80 Intermodulation Distortion (dBc) Tone Spacing (MHz) Intermodulation Distortion vs. Tone Spacing VDD = 30 V, IDQ = 2.4 A, ƒ = 2140 MHz, POUT = 251 W (PEP) IM5 IM7 IM3 -75 -65 -55 -45 -35 -25 -15 39 43 47 51 55 IMD (dBc) Output Power, Avg. (dBm) Two-tone IMD vs. Output Power VDD = 30 V, IDQ = 2.4 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz 3rd Order 5th 7th Typical Performance (cont.)

Data Sheet 6 of 16 Rev. 05.3, 2016-06-15 PTFB213004F 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.7 0.2 0.4 0.6 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.40 0.45 0.05 0.10 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 Nornalized to 50 Ohms ptfb213004f-v1 db213004f-v1_2sgr Jan. 29, 2010 2:30:00 PM Z Source Z Load Graph #2

2200 MHz

2080 MHz

Z0 = 50 W -40 -35 -30 -25 -20 -15 -10 2060 2100 2140 2180 2220 Return Loss (dB)/ACP (dBc) Gain, PARC (dB), Efficiency (%) Frequency (MHz) Single-carrier Broadband Performance VDD = 30 V, IDQ = 2.4 A, POUT = 89 W, single-carrier 3GPP WCDMA signal Gain Efficiency IRL PARC ACP -80 -60 -40 -20 36 40 44 48 52 56 Efficiency (%) / ACP (dBc) PARC, PARC Gain (dB) Output Power, avg. (dBm) Output PAR Compression (PARC), VDD = 30 V, IDQ = 2.4 A, ƒ = 2110 MHz, single-carrier 3GPP WCDMA signal, input PAR = 7.5 dB, 3.84 MHz BW Gain Efficiency PARC @ .01% CCDF ACP Z Source Z Load G D G S D Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 2080 1.55 –4.57 0.71 –2.91 2090 1.54 –4.52 0.71 –2.89 2100 1.52 –4.48 0.70 –2.86 2110 1.51 –4.44 0.70 –2.84 2120 1.50 –4.40 0.70 –2.81 2130 1.48 –4.36 0.70 –2.79 2140 1.47 –4.32 0.70 –2.77 2150 1.46 –4.28 0.70 –2.74 2160 1.45 –4.24 0.69 –2.72 2170 1.43 –4.20 0.69 –2.70 2180 1.42 –4.17 0.69 –2.67 2190 1.41 –4.13 0.69 –2.65 2200 1.40 –4.09 0.69 –2.63 Typical Performance (cont.)

Data Sheet 7 of 16 Rev. 05.3, 2016-06-15 Reference Circuit (cont.) Reference circuit input schematic for ƒ = 2170 MHz TL122 TL123 TL106 TL124 TL125 TL107TL108 TL109 TL110 TL111 TL112 TL113 TL114 C801 1000 pF C802 1000 pF C803 1000 pF C102 4700000 pF C101 100000 pF TL126 TL127 TL128 TL129 TL130 TL131 TL132 TL133 TL134 TL135 TL136 TL102 TL101 TL103 TL104TL105 TL142 TL143 TL144TL145 TL146 TL147 TL148 TL149 TL150 TL151 TL152 TL153 TL115 TL116 TL117 TL118 TL119 TL120 TL121 C105 10 pF C106 10 pF TL155TL156 R801

10 OhmR802

1200 Ohm

10 Ohm

1300 Ohm

100 Ohm

0.6 pF R104

0 Ohm

0.7 pF TL154 VGS 1 GATE 2 DUT RF IN In Out NC NC 2 3 4 5 6 7 S C B E 1 2 TL157 C103 8.2 pF 1 2 TL168 C114 0.6 pF TL171 TL170 GATE 1 DUT b b b b b b bb bb b bbbb bbb bbb b b b er = 3.48 H = 20 mil RO/RO4350 B1

Data Sheet 8 of 16 Rev. 05.3, 2016-06-15 PTFB213004F Reference Circuit (cont.) Reference circuit output schematic for ƒ = 2170 MHz TL201 TL202TL203TL204 TL205 TL206 TL207 TL208 TL209 TL210 TL211 TL212TL213 TL214 TL215 C201 8.2 pF 3TL216 3TL217 TL218 TL219 TL220 TL221 TL222 TL223 TL224 TL225 TL226 TL227 C202 10000000 pF C203 10000000 pFTL228 TL229 TL230 TL231 C204 1000000 pF C205 2200000 pF C206 2200000 pF C207 1000000 pF 1 2 TL232 C208 0.4 pF C209 1.2 pF C210 1.2 pF C211 1.2 pF C212 1.2 pF TL233 1 2 TL234 TL235 RF OUTDRAIN DUT C213 10000000 pF C214 10000000 pF TL236 3TL237 3TL238 TL239 TL240TL241 1 2 TL242 TL243 TL244 TL245 TL246 TL247 TL248 b b b b b b bbb b b b b bb b bbb bbb b b b VDD 2 VDD VDD VDD 1 er = 3.48 H = 20 mil RO/RO4350 B1

Data Sheet 9 of 16 Rev. 05.3, 2016-06-15 Reference Circuit (cont.)

Description

DUT PTFB213004F LDMOS Transistor PCB LTN/PTFB213004EF 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. copper Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101 0.010 λ, 28.85 W W = 2.540, L = 0.787 W = 100, L = 31 TL102 0.207 λ, 63.89 W W = 0.762, L = 17.526 W = 30, L = 690 TL103 0.006 λ, 63.89 W W = 0.762, L = 0.508 W = 30, L = 20 TL104 0.070 λ, 8.03 W W = 11.430, L = 5.359 W = 450, L = 211 TL105, TL106 0.017 λ, 8.03 W W = 11.430, L = 1.270 W = 450, L = 50 TL107 0.025 λ, 32.60 W W = 2.159, L = 2.032 W = 85, L = 80 TL108 0.015 λ, 49.69 W W = 1.168, L = 1.270 W = 46, L = 50 TL109, TL110, TL111, W = 2.540 W = 100 TL112 TL113, TL114 W = 1.016 W = 40 TL115, TL131 0.000 λ, 41.75 W W = 1.524, L = 0.025 W = 60, L = 1 TL116, TL133 0.016 λ, 34.08 W W = 2.032, L = 1.270 W = 80, L = 50 TL117 0.016 λ, 17.20 W W = 4.826, L = 1.270 W = 190, L = 50 TL118 0.041 λ, 63.89 W W = 0.762, L = 3.480 W = 30, L = 137 TL119, TL136 0.000 λ, 41.75 W W = 1.524, L = 0.025 W = 60, L = 1 TL120, TL122 0.015 λ, 54.17 W W = 1.016, L = 1.262 W = 40, L = 50 TL121, TL135 0.020 λ, 54.17 W W = 1.016, L = 1.651 W = 40, L = 65 TL123, TL130 0.017 λ, 54.17 W W = 1.016, L = 1.397 W = 40, L = 55 TL124, TL129 0.000 λ, 34.08 W W = 2.032, L = 0.025 W = 80, L = 1 TL125, TL128 0.091 λ, 54.17 W W = 1.016, L = 7.620 W = 40, L = 300 TL126, TL127 0.009 λ, 54.17 W W = 1.016, L = 0.762 W = 40, L = 30 TL132 0.018 λ, 63.89 W W = 0.762, L = 1.524 W = 30, L = 60 TL134 0.006 λ, 63.89 W W = 0.762, L = 0.508 W = 30, L = 20 TL143 W1 = 0.003, W2 = 0.005, Offset = 0.000 W1 = 3, W2 = 190, Offset = 10 TL144 W1 = 0.005, W2 = 0.011, Offset = –0.003 W1 = 5, W2 = 450, Offset = –130 TL145 W1 = 0.003, W2 = 0.005, Offset = 0.000 W1 = 3, W2 = 190, Offset = –10 TL146 W1 = 2.032, W2 = 0.762 W1 = 80, W2 = 30 TL147 W1 = 2.540, W2 = 0.762 W1 = 100, W2 = 30 TL148 W1 = 1.168, W2 = 2.159 W1 = 46, W2 = 85 TL149 0.009 λ, 28.85 W W = 2.540, L = 0.762 W = 100, L = 30 TL150, TL151 0.006 λ, 17.20 W W = 4.826, L = 0.508 W = 190, L = 20 table continued on page 10

Data Sheet 10 of 16 Rev. 05.3, 2016-06-15 PTFB213004F Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL152 0.070 λ, 8.03 W W = 11.430, L = 5.359 W = 450, L = 211 TL153 0.018 λ, 63.89 W W = 0.762, L = 1.524 W = 30, L = 60 TL154 0.016 λ, 17.20 W W = 4.826, L = 1.270 W = 190, L = 50 TL155 0.060 λ, 49.69 W W = 1.168, L = 5.022 W = 46, L = 198 TL156 0.002 λ, 49.69 W W = 1.168, L = 0.203 W = 46, L = 8 TL163, TL164 0.004 λ, 63.89 W W = 0.762, L = 0.330 W = 30, L = 13 TL165, TL171 W1 = 0.011, W2 = 0.003, Offset = 0.005 W1 = 11, W2 = 100, Offset = 200 TL166 W1 = 0.005, W2 = 0.011, Offset = 0.003 W1 = 5, W2 = 450, Offset = 130 TL167 W1 = 0.000, W2 = 0.000, W3 = 0.000 W1 = 0, W2 = 1, W3 = 1 TL169 0.000 λ, 102.05 W W = 0.254, L = 0.025 W = 10, L = 1 TL170 0.000 λ, 47.12 W W = 1.270, L = 0.025 W = 50, L = 1 See next page for reference circuit output characteristics

Data Sheet 11 of 16 Rev. 05.3, 2016-06-15 Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL204 W1 = 25.400, W2 = 26.365 W1 = 1000, W2 = 1038 TL205, TL206, TL210, 0.000 λ, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1 TL211 TL207 0.064 λ, 3.67 W W = 26.365, L = 4.801 W = 1038, L = 189 TL208 0.050 λ, 34.72 W W = 1.981, L = 4.115 W = 78, L = 162 TL209 0.028 λ, 47.12 W W = 1.270, L = 2.337 W = 50, L = 92 TL212 0.053 λ, 47.12 W W = 1.270, L = 4.394 W = 50, L = 173 TL213 0.016 λ, 28.85 W W = 2.540, L = 1.270 W = 100, L = 50 TL214 W1 = 17.526, W2 = 0.025, W3 = 17.526, W1 = 690, W2 = 1, W3 = 690, W4 = 0.025 W4 = 1 TL215 W1 = 9.398, W2 = 0.025, W3 = 9.398, W1 = 370, W2 = 1, W3 = 370, W4 = 0.025 W4 = 1 TL219, TL220 0.017 λ, 20.93 W W = 3.810, L = 1.372 W = 150, L = 54 TL221 0.008 λ, 20.93 W W = 3.810, L = 0.635 W = 150, L = 25 TL222, TL225, TL228, 0.000 λ, 37.51 W W = 1.778, L = 0.025 W = 70, L = 1 TL231 TL223 0.032 λ, 20.93 W W = 3.810, L = 2.540 W = 150, L = 100 TL224 0.008 λ, 20.93 W W = 3.810, L = 0.635 W = 150, L = 25 TL226 0.165 λ, 20.93 W W = 3.810, L = 13.106 W = 150, L = 516 TL227 0.032 λ, 20.93 W W = 3.810, L = 2.540 W = 150, L = 100 TL229, TL230 0.000 λ, 20.93 W W = 3.810, L = 0.025 W = 150, L = 1 TL236, TL239 0.018 λ, 20.93 W W = 3.810, L = 1.397 W = 150, L = 55 TL240 0.165 λ, 20.93 W W = 3.810, L = 13.106 W = 150, L = 516 TL241 0.006 λ, 20.93 W W = 3.810, L = 0.508 W = 150, L = 20 TL243, TL246, TL247 0.000 λ, 34.08 W W = 2.032, L = 0.025 W = 80, L = 1 TL244 0.006 λ, 20.93 W W = 3.810, L = 0.508 W = 150, L = 20 TL248 W1 = 2.540, W2 = 1.270 W1 = 100, W2 = 50

Data Sheet 12 of 16 Rev. 05.3, 2016-06-15 PTFB213004F Reference Circuit (cont.) Reference circuit assembly diagram (not to scale)* *Gerber Files for this circuit available on request 10 µF PTFB213004_IN_01 b 2 1 3 0 0 4 f _ C D _ 0 8 - 0 6 - 2 0 1 0 PTFB213004_OUT_02 R805 R801 R106 R803 R104 C106 C113 R105 C110 R107 C114 C102 C101 C103 C105 C104 C112 C111 C109 C801C803 R802 C802 R804 RO4350, .020 (60)RO4350, .020 (60) C211 C201 C209 C210 C208 C212 C206 C207 C202 C213 C203 C204 C205 C214 VDD VDD RF IN RF OUT VDD 10 µF

Data Sheet 13 of 16 Rev. 05.3, 2016-06-15 Reference Circuit (cont.) Circuit Assembly Information Component Description Suggested Manufacturer P/N Input C101, C108, C111 Chip capacitor, 0.1 µF Digi-Key PCC104BTR-ND C102, C112 Chip capacitor, 4.7 µF Digi-Key 493-2372-2-ND C103 Chip capacitor, 8.2 pF ATC ATC100B8R2BW500XB C104 Chip capacitor, 0.7 pF ATC ATC100A0R7BW150XB C105, C106 Chip capacitor, 10 pF ATC ATC100B100FW500XB C107 Capacitor, 10 µF Digi-Key 399-1655-2-ND C109, C110 Chip capacitor, 10 pF ATC ATC100A100FW150XB C113, C114 Chip capacitor, 0.6 pF ATC ATC100B0R6BW500XB C801, C802, C803 Chip capacitor, 1000 pF Digi-Key PCC1772CT -ND R101, R102 Resistor, 0 W Digi-Key P0.0ECT -ND R103, R106, R107, R801, Resistor, 10 W Digi-Key P10ECT -ND R803 R104, R105 Resistor, 0 W Digi-Key P0.0GCT -ND R802 Resistor, 1200 W Digi-Key P1.2KECT -ND R804 Resistor, 1300 W Digi-Key P1.3KGCT -ND R805 Resistor, 100 W Digi-Key P100ECT -ND S1 Potentiometer, 2k W Digi-Key 3224W-202ECT -ND S2 Transistor Digi-Key BCP56 S3 Voltage Regulator Digi-Key LM7805 Output C201 Chip capacitor, 8.2 pF ATC ATC100B8R2BW500XB C202, C203 Capacitor, 10 µF Digi-Key 399-1655-2-ND C204, C207 Chip capacitor, 1 µF Digi-Key 445-1411-2-ND C205, C206 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND C208 Chip capacitor, 0.4 pF ATC ATC100B0R4BW500XB C209, C210, C211, C212 Chip capacitor, 1.2 pF ATC ATC100A1R2BW150XB C213, C214 Capacitor, 10 µF Digi-Key 587-1818-2-ND

Data Sheet 14 of 16 Rev. 05.3, 2016-06-15 PTFB213004F S = flange G1 G2 D1 D2 Pin Description G1, G2 Gate D1, D2 Drain V1, V2 VDD S Source (flange) h - 3 6 / 3 7 2 7 5 - 8 _ B D - s _ 2 - 3 - 2 0 1 0 D D G G Pinout Diagram See next page for package outline specifications

Data Sheet 15 of 16 Rev. 05.3, 2016-06-15 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: G1, G2 = gate; D1, D2 = drain; S = source; V1, V2 = VDD. 6. Gold plating thickness: 1.1 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Package Outline Specifications Package H-37275-6/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V1, V2 – VDD 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. G1 G2 D2D1 V2 32.258 [1.270] 1.626 [0.064] 10.160 [.400] 4X 11.684 [.460] 2X 45° X 1.19 [45° X .047] 2X 1.143 [.045] 16.612±.500 [.654±.020] 9.398 [.370] CL 13.716 [.540] 9.144 [.360] 2X 3.175 [.125] 2X 30° 31.750 [1.250] 2X 2.032 [.080] REF 2.134 [.084] SPH 3.226±0.508 [.127±.020] 31.242±0.280 [1.230±.011] 4.585+0.250-0.127 [ .180 +.010 -.005 ] S 4X R0.508 +.381 -.127 [R.020+.015 -.005 ] CL CL CL CL

Data Sheet 16 of 16 Rev. 05.3, 2016-06-15 We Listen to Y our Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFB213004F V2 Revision History: 2016-06-15 Data Sheet Previous Version: 2010-12-09, Data Sheet Page Subjects (major changes since last revision)

2 Updated ordering information

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.