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Technical content
Features
Broadband internal matching Wide video bandwidth Typical two-carrier WCDMA performance,
2170 MHz, 28 V, 3GPP signal, PAR = 8 dB,
10 MHz carrier spacing
- Average output power = 40 W - Linear gain = 18 dB - Efficiency = 27% - Intermodulation distortion = –35 dBc - Adjacent channel power= –39 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P 1dB = 200 W - Efficiency = 52% - Gain = 17 dB Capable of handling 10:1 VSWR @28 V, 200 W (CW) output power Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 30 V, IDQ = 1850 mA, POUT = 50 W avg, ƒ = 2170 MHz. 3GPP signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 16.75 18 19 dB Drain Effi ciency ηD 25 27.5 — % Adjacent Channel Power Ratio ACPR — –36.5 –32 dBc -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) IMD (dBc) Output Power (dBm) Single-carrier WCDMA, 3GPP Drive-up VDD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz IMD Low IMD Up Efficiency
Data Sheet 2 of 13 Rev. 03, 2015-10-30 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V( BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V IDSS — — 0.1 µA V DS = 63 V, VGS = 0 V IDSS — — 1.0 µA Gate Leakage Current V GS = 12 V, VDS = 0 V IGSS — — 1 µA On-State Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 0.05 — Ω Operating Gate Voltage V DS = 28 V, IDQ = 1.6 A V GS — 2.85 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature T J 200 °C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 30 V VDD, 200 W CW) RθJC 0.26 °C/W
Ordering Information
Type and Version Order Code Package and Description Shipping PTFB212507SH V2 R2 PTFB212507SHV2R2XTMA1 H-37288G-4/2, ceramic open-cavity, Tape & Reel, 250 pcs formed leads
Data Sheet 3 of 13 Rev. 03, 2015-10-30 PTFB212507SH Typical Performance (data taken in a production test fi xture) -55 -50 -45 -40 -35 -30 -25 -20 34 36 38 40 42 44 46 48 50 52 IMD (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 1.6 A, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
2110 Lower
2110 Upper
2140 Lower
2140 Upper
2170 Lower
2170 Upper
-60 -55 -50 -45 -40 -35 -30 -25 -20 -15 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz IMD Low IMD Up ACPR Efficiency -50 -40 -30 -20 -10 2040 2070 2100 2130 2160 2190 2220 Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) Frequency (MHz) Single-carrier WCDMA, 3GPP Broadband VDD = 28 V, IDQ = 1.6 A, POUT = 63 W Gain Efficiency RL IMD 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA 3GPP VDD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz Efficiency Gain
Data Sheet 4 of 13 Rev. 03, 2015-10-30 Typical Performance (cont.) 35 40 45 50 55 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz Gain -10°C Gain +25°C Gain +85°c Efficiency -10°C Efficiency +25°C Efficiency +85°C 35 40 45 50 55 Power Gain (dB) Output Power (dBm) CW Performance Gain vs. Output Power VDD = 28 V, ƒ = 2170 MHz IDQ = 1.62 A IDQ = 2.187 A IDQ = 1.05 A -80 -70 -60 -50 -40 -30 -20 35 40 45 50 55 IMD (dBc) Output Power, PEP (dBm) Two-tone Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 1.6 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz 3rd Order 7th 5th 37 39 41 43 45 47 49 51 53 55 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz Efficiency Gain
Data Sheet 5 of 13 Rev. 03, 2015-10-30 PTFB212507SH Typical Performance (cont.) 37 39 41 43 45 47 49 51 53 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD = 28 V, IDQ = 1.6 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz Efficiency Gain -65 -55 -45 -35 -25 -15 37 39 41 43 45 47 49 51 53 55 Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up VDD = 28 V, IDQ = 1.6 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz Efficiency IMD3 -70 -60 -50 -40 -30 -20 35 40 45 50 55 IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up at Selected Frequencies VDD = 28 V, IDQ = 1.6 A, Tone Spacing = 1 MHz
2110 MHz
2140 MHz
2170 MHz
-50 -45 -40 -35 -30 -25 -20 -15 -10 2040 2080 2120 2160 2200 2240 Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) Frequency (MHz) Two-tone Broadband Performance VDD = 28 V, IDQ = 1.6 A, POUT = 89 W Efficiency RL IMD3 Gain
Data Sheet 6 of 13 Rev. 03, 2015-10-30 Z Source Z Load G S D Broadband Circuit Impedance Frequency Z Source Z Load MHz R jX R jX 2080 2.89 –6.50 1.58 –4.39 2110 2.74 –6.29 1.55 –4.29 2140 5.61 –6.09 1.52 –4.20 2170 2.48 –5.89 1.49 –4.11 2200 2.37 –5.70 1.45 –4.02 See next page for reference circuit information
Data Sheet 7 of 13 Rev. 03, 2015-10-30 PTFB212507SH Reference Circuit Reference circuit input schematic for ƒ = 2170 MHz Reference circuit output schematic for ƒ = 2170 MHz TL115 TL116 TL117 TL118 C801 1000 pF C802 1000 pF C803 1000 pF TL105 TL119 TL120 TL121 TL122 TL123 TL126 TL127 TL128 R803
100 Ohm
10 Ohm
2.1 pF R101
1200 Ohm
1300 Ohm
S C B E TL125 RF_IN GATE DUT (Pin G) VDD TL233 C213 220000000 pF C212 220000000 pF TL231 TL209 TL210 TL211TL212 TL213 TL214TL215 TL216 TL217 C207 1000000 pF C208 10000000 pF C209 10000000 pF C210 2200000 pF C211 2200000 pF TL218TL219 C204 10000000 pF TL220 TL221 TL222 TL223 TL224 TL225 TL226TL227 TL228 TL229 TL230TL202 TL201 C201 10 pFTL205 C202 1.9 pF C203 1.9 pF 3TL207 TL206 TL208 TL203 3TL204 C205 10000000 pF C206 1000000 pF TL232 VDD DUT (Pin V) DRAIN_DUT (Pin D) RF_OUT DUT (Pin V) VDD b212507sh_bdout_05-15-2012 Hr = 3.66 H = 20 mil RO/RO4350B1 Hr = 3.66 H = 20 mil RO/RO4350B1
Data Sheet 8 of 13 Rev. 03, 2015-10-30 Reference Circuit (cont.) Reference Circuit Assembly DUT PTFB212507SH-V2 Test Fixture Part No. LTN/PTFB212507SH PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, r = 3.66 Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101 W1 = 19.050, W2 = 1.270 W1 = 750, W2 = 50 TL102 0.017 λ, 54.17 Ω W = 1.016, L = 1.448 W = 40, L = 57 TL103 W1 = 0.762, W2 = 1.016 W1 = 30, W2 = 40 TL105 0.018 λ, 54.17 Ω W = 1.016, L = 1.524 W = 40, L = 60 TL106, TL107, TL108 W = 1.016, W = 40 TL109 0.032 λ, 47.12 Ω W = 1.270, L = 2.652 W = 50, L = 104 TL110, TL129 0.014 λ, 54.17 Ω W = 1.016, L = 1.143 W = 40, L = 45 TL111 0.016 λ, 31.24 Ω W = 2.286, L = 1.270 W = 90, L = 50 TL112, TL113 0.095 λ, 54.17 Ω W = 1.016, L = 8.001 W = 40, L = 315 TL114 0.015 λ, 54.17 Ω W = 1.016, L = 1.270 W = 40, L = 50 TL115 0.154 λ, 47.12 Ω W = 1.270, L = 12.802 W = 50, L = 504 TL116 0.058 λ, 54.17 Ω W = 1.016, L = 4.831 W = 40, L = 190 TL117 0.060 λ, 4.99 Ω W = 19.050, L = 4.572 W = 750, L = 180 TL118 0.030 λ, 54.17 Ω W = 1.016, L = 2.540 W = 40, L = 100 TL119 0.044 λ, 54.17 Ω W = 1.016, L = 3.670 W = 40, L = 145 TL120 0.149 λ, 63.89 Ω W = 0.762, L = 12.581 W = 30, L = 495 TL121 0.044 λ, 63.89 Ω W = 0.762, L = 3.759 W = 30, L = 148 TL122 0.031 λ, 34.72 Ω W = 1.981, L = 2.540 W = 78, L = 100 TL123 W1 = 1.270, W2 = 2.286 W1 = 50, W2 = 90 TL130 W1 = 19.050, W2 = 1.016, W3 = 19.050 W1 = 750, W2 = 40, W3 = 750, W4 = 1.016 W4 = 40 TL131 W1 = 1.016, W2 = 1.981 W1 = 40, W2 = 78 table continued on page 9
Data Sheet 9 of 13 Rev. 03, 2015-10-30 PTFB212507SH Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL201 W1 = 3.048, W2 = 4.877 W1 = 120, W2 = 192 TL202 W1 = 3.048, W2 = 4.928 W1 = 120, W2 = 194 TL203 W1 = 14.992, W2 = 0.508, W3 = 14.992 W1 = 590, W2 = 20, W3 = 590, W4 = 0.508 W4 = 20 TL205 W1 = 18.263, W2 = 1.651 W1 = 719, W2 = 65 TL206 0.004 λ, 78.27 Ω W = 0.508, L = 0.366 W = 20, L = 14 TL208 0.004 λ, 78.27 Ω W = 0.508, L = 0.363 W = 20, L = 14 TL209 W1 = 1.651, W2 = 2.540 W1 = 65, W2 = 100 TL210 W1 = 1.270, W2 = 2.540 W1 = 50, W2 = 100 TL211 0.047 λ, 47.12 Ω W = 1.270, L = 3.912 W = 50, L = 154 TL212 0.067 λ, 5.19 Ω W = 18.263, L = 5.080 W = 719, L = 200 TL213, TL214 0.016 λ, 28.85 Ω W = 2.540, L = 1.270 W = 100, L = 50 TL215 0.141 λ, 39.51 Ω W = 1.651, L = 11.582 W = 65, L = 456 TL216 0.036 λ, 16.90 Ω W = 4.928, L = 2.794 W = 194, L = 110 TL217 0.035 λ, 17.05 Ω W = 4.877, L = 2.794 W = 192, L = 110 TL219, TL227 0.010 λ, 25.04 Ω W = 3.048, L = 0.762 W = 120, L = 30 TL221, TL222 W = 3.048 W = 120 TL233 TL231 TL226, TL228 0.119 λ, 25.04 Ω W = 3.048, L = 9.576 W = 120, L = 377
Data Sheet 10 of 13 Rev. 03, 2015-10-30 Reference Circuit (cont.) Reference circuit assembly diagram (not to scale) RF_IN RO4350, .020 (60) PTFB212507_IN_02 R803 R802 R801 C801C802 C803 R804 R103 R101 C105 C101 C104 C106 R102 C103 R104 C102 PTFB212507_OUT_02 C205 C208 C209 C211 C203 C207 RF_OUT 10 μF 10 μF C210 C206 C204 C201 C212 C213 RO4350, .020 (60) C202
Data Sheet 11 of 13 Rev. 03, 2015-10-30 PTFB212507SH Reference Circuit (cont.) Components Information Component Description Supplier P/N Input C101 Chip capacitor, 2.1 pF ATC ATC100B2R1CW500XB C102 Chip capacitor, 10 pF ATC ATC100B100CW500XB C103, C106 Chip capacitor, 4.7 µF Digi-Key 493-2372-2-ND C104, C105 Chip capacitor, 10 pF ATC ATC100A100JW500XB C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT -ND R101, R103, R804 Resistor, 10 Ohm Digi-Key P10ECT -ND R102, R104 Resistor, 10 Ohm Digi-Key P10GCT -ND R801 Resistor, 1200 Ohm Digi-Key P1.2KGCT -ND R802 Resistor, 1300 Ohm Digi-Key P1.3KGCT -ND R803 Resistor, 100 Ohm Digi-Key P101ECT -ND S1 Transistor Digi-Key BCP56 S2 Voltage Regulator Digi-Key LM78L05ACM-ND S3 Potentiometer, 2k ohm Digi-Key 3224W-202ECT -ND Output C201 Chip capacitor, 10 pF ATC ATC100A100GW150XB C202, C203 Chip capacitor, 1.9 pF ATC ATC100B1R9CW500XB C204, C205 Capacitor, 10 µF Digi-Key 587-1818-2-ND C206, C207 Chip capacitor, 1 µF Digi-Key 445-1411-2-ND C208, C209 Capacitor, 10 µF Digi-Key 281M5002106K C210, C211 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND C212, C213 Capacitor, 220 µF Digi-Key PCE4444TR-ND
Data Sheet 12 of 13 Rev. 03, 2015-10-30 Package Outline Specifi cations Package H-37288G-4/2 with Formed Leads Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower &/ &/ ' 99 ; >@ 63+'* ; >@ 63+'* 63+9 >@ >@ +*BJZBSRBB Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm, alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] 4. Pins: D – drain; G – gate; S – source (flange); V – V DD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max.
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 Inter national Data Sheet 13 of 13 Rev. 03, 2015-10-30 Edition 2015-10-30 Published by Infi neon Technologies AG
85579 Neubiberg, Germany
© 2012 – 2015 Inineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce (www.infineon.com/rfpower). W arnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTFB212507SH V2
Revision History
Revision Date Data Sheet Page Subjects (major changes at each revision) 01 2012-01-23 Advance all Proposed specification for new product development. 02 2012-05-16 Production all All specifications finalized, circuit and performance information added. 03 2015-10-30 Production 1, 2, 12 Package changed from H-34288G-4/2 to H-37288G-4/2.