PTFB211803FL

PTFB211803EL V1 & PTFB211803FL V2, Data Sheet, Rev. 05, 10 Nov 2010

Document overview

• Manufacturer or author: Infineon Technologies, T Tran, P Lee
• PDF pages: 14

Technical content

Features

• Broadband internal matching
• Typical two-carrier WCDMA performance at

2170 MHz, 30 V

• Average output power = 40 W - Linear Gain = 17.5 dB - Efficiency = 29.7% - Intermodulation distortion = –34 dBc - Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V - Output power at P 1dB = 180 W - Efficiency = 55%
• Increased negative gate-source voltage range for improved performance in Doherty amplifiers
• Integrated ESD protection.
• Capable of handling 10:1 VSWR @ 30 V,

180 W (CW) output power

• Pb-free and RoHS compliant PTFB211803FL H-34288-4/2

Data Sheet 2 of 14 Rev. 05, 2010-11-10 PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.3 A, POUT = 38 W average, ƒ1 = 2165 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16 17 — dB Drain Efficiency hD 28 29.5 — % Intermodulation Distortion IMD — –32.5 –31.5 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 30 V, IDQ = 1.3 A VGS 2.3 3.0 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 180 W CW) RqJC 0.3 °C/W

Ordering Information

Type and Version Package Type Package Description Shipping PTFB211803EL V1 H-33288-6 Slotted flange, single-ended Tray PTFB211803EL V1 R250 H-33288-6 Slotted flange, single-ended Tape & Reel, 250 pcs PTFB211803FL V2 H-34288-4/2 Earless flange, single-ended Tray PTFB211803FL V2 R250 H-34288-4/2 Earless flange, single-ended Tape & Reel, 250 pcs

Confidential, Limited Internal Distribution Data Sheet – DRAFT ONLY 3 of 14 Rev. 05, 2010-11-10 33 35 37 39 41 43 45 47 49 Gain (dB) Output Power (dBm) Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz Gain Efficiency Drain Efficiency (%) -50 -40 -30 -20 -10 2080 2100 2120 2140 2160 2180 2200 IRL (dB) / ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA, 3GPP Broadband VDD = 30 V, IDQ = 1.30 A, POUT = 47 dBm Efficiency IRL ACP Gain (dB) / Efficiency (%) Gain 41 43 45 47 49 51 53 Power Gain (dB) Output Power (dBm) CW Performance Gain vs. Output Power VDD = 30 V, ƒ = 2170 MHz IDQ = 1.80 A IDQ = 0.90 AIDQ = 1.30 A -60 -55 -50 -45 -40 -35 -30 -25 -20 33 35 37 39 41 43 45 47 49 Drain Efficiency (%) ACP (dBc) Output Power (dBm) Single-carrier WCDMA Drive-Up VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz ACP Up Efficiency ACP Low Typical Performance (data taken in a production test fixture)

Data Sheet 4 of 14 Rev. 05, 2010-11-10 PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution -65 -55 -45 -35 -25 -15 40 42 44 46 48 50 52 54 Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 1.30 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz Efficiency IMD3 -50 -40 -30 -20 -10 2080 2100 2120 2140 2160 2180 2200 Frequency (MHz) Two-tone Broadband Performance VDD = 30 V, IDQ = 1.30 A, POUT = 63 W Gain EfficiencyIRL IMD3 Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) 40 42 44 46 48 50 52 54 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 1.30 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz Efficiency Gain -50 -40 -30 -20 41 43 45 47 49 51 53 IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 1.30 A, tone spacing = 1 MHz 2170MHz 2140MHz 2110MHz -50 -40 -30 -20 41 43 45 47 49 51 53 IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 1.30 A, tone spacing = 1 MHz 2170MHz 2140MHz 2110MHz Typical Performance (cont.)

Confidential, Limited Internal Distribution Data Sheet – DRAFT ONLY 5 of 14 Rev. 05, 2010-11-10 -70 -60 -50 -40 -30 -20 40 45 50 55 IMD (dBc) Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.30 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz 3rd Order 7th 5th 41 43 45 47 49 51 53 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz Efficiency Gain 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz Gain Efficiency +25° C +85° C –10° C Typical Performance (cont.)

Data Sheet 6 of 14 Rev. 05, 2010-11-10 PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.7 0.2 0.4 0.6 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.40 0.45 0.05 0.10 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 nalized to 50 Ohms 1803efl Mar. 22, 2010 7:12:29 PM Z Source Z Load fb211803efl-v1

2080 MHz

2080 MHzMHz

2200 MHz

Z0 = 50 W Z Source Z Load G S D Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 2200 2.02 –6.03 1.70 –4.67 2170 2.12 –6.26 1.72 –4.76 2140 2.23 –6.50 1.73 –4.85 2110 2.34 –6.75 1.75 –4.95 2080 2.47 –7.01 1.77 –5.05 See next page for reference circuit information

Confidential, Limited Internal Distribution Data Sheet 7 of 14 Rev. 05, 2010-11-10 Reference Circuit Reference circuit input schematic for ƒ = 2170 MHz C106 10 pF C105 100000 pF C102 100000 pF TL133 TL134 TL132 TL135 TL101 TL102 TL103 TL104 TL105 TL106 TL107 C801 1000 pF C802 1000 pF C803 1000 pF TL108 R805

1200 Ohm

1300 Ohm

10 Ohm

100 Ohm

S C B E C108 2.1 pF 1 2 TL136TL137 RF_IN GATE DUT (Pin G) b 2 1 1 8 0 3 e f l _ b d i n _ 0 8 - 2 6 - 2 0 1 0 TL201TL202 TL203TL204TL205 TL206 TL207TL208 TL209 TL210 TL211 TL212 1 2 TL213TL214 TL215 TL216 TL217 TL218TL219 C201 10 pF TL220 TL221 TL222TL223 TL224 TL225 TL226 C202 10000000 pF C203 0.3 pF 1 2 TL227 C204 100000000 pF C205 100000000 pF C206 2200000 pF TL228 TL229TL230 TL231 C207 1000000 pF TL232 TL233 C208 2200000 pF TL234 C209 1000000 pF TL235 C210 10000000 pF TL236 TL237 TL238 DUT (Pin V) DRAIN DUT (Pin D) DUT (Pin V) RF_OUT VDD VDD b 2 1 1 8 0 3 e f l _ b d o u t _ 0 8 - 2 6 - 2 0 1 0 Reference circuit output schematic for ƒ = 2170 MHz er=3.48 H=20 mil RO/RO4350B1 er=3.48 H=20 mil RO/RO4350B1

Data Sheet 8 of 14 Rev. 05, 2010-11-10 PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Reference Circuit (cont.)

Description

DUT PTFB211803EL or PTFB211803FL PCB 0.508 mm [.020"] thick, er = 3.66, Rogers 4350, 1 oz. copper Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101 0.053 λ, 6.67 W W = 13.970, L = 4.064 W = 550, L = 160 TL102, TL103 0.019 λ, 54.17 W W = 1.016, L = 1.575 W = 40, L = 62 TL104, TL105 0.000 λ, 36.77 W W = 1.829, L = 0.025 W = 72, L = 1 TL106, TL122 0.026 λ, 54.17 W W = 1.016, L = 2.159 W = 40, L = 85 TL107 0.021 λ, 54.17 W W = 1.016, L = 1.727 W = 40, L = 68 TL108 0.018 λ, 54.17 W W = 1.016, L = 1.524 W = 40, L = 60 TL109 0.029 λ, 54.17 W W = 1.016, L = 2.451 W = 40, L = 97 TL110 0.092 λ, 63.89 W W = 0.762, L = 7.831 W = 30, L = 308 TL111 0.031 λ, 34.72 W W = 1.981, L = 2.540 W = 78, L = 100 TL112 W1 = 1.270, W2 = 2.286 W1 = 50, W2 = 90 TL113 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500 TL128 TL117, TL118, TL119 W = 1.016 W = 40 TL120 W1 = 13.970, W2 = 1.016, W3 = 13.970 W1 = 550, W2 = 40, W3 = 550 W4 = 1.016 W4 = 40 TL121 0.032 λ, 47.12 W W = 1.270, L = 2.692 W = 50, L = 106 TL123 0.016 λ, 31.24 W W = 2.286, L = 1.270 W = 90, L = 50 TL124, TL134 0.095 λ, 54.17 W W = 1.016, L = 8.001 W = 40, L = 315 TL129 0.005 λ, 6.67 W W = 13.970, L = 0.356 W = 550, L = 14 TL130 0.000 λ, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1 TL132 0.134 λ, 47.12 W = 1.270, L = 11.151 W = 50, L = 439 TL133 0.012 λ, 54.17 W = 1.016, L = 1.016 W = 40, L = 40 TL135 0.012 λ, 54.17 W = 1.016, L = 1.021 W = 40, L = 40 table continued on page 9

Confidential, Limited Internal Distribution Data Sheet 9 of 14 Rev. 05, 2010-11-10 Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL201 W1 = 1.270, W2 = 2.540 W1 = 50, W2 = 100 TL202 0.001 λ, 5.33 W W = 17.780, L = 0.076 W = 700, L = 3 TL203 0.047 λ, 47.12 W W = 1.270, L = 3.912 W = 50, L = 154 TL204 0.044 λ, 39.51 W W = 1.651, L = 3.581 W = 65, L = 141 TL205 0.054 λ, 4.84 W W = 19.685, L = 4.064 W = 775, L = 160 TL206, TL207 0.016 λ, 28.85 W W = 2.540, L = 1.270 W = 100, L = 50 TL208 0.012 λ, 39.51 W W = 1.651, L = 1.016 W = 65, L = 40 TL209 0.032 λ, 16.90 W W = 4.928, L = 2.540 W = 194, L = 100 TL210 0.032 λ, 17.05 W W = 4.877, L = 2.540 W = 192, L = 100 TL211, TL212 W = 3.048 W = 120 TL214, TL216 0.135 λ, 25.04 W W = 3.048, L = 10.820 W = 120, L = 426 TL215, TL217 0.046 λ, 25.04 W W = 3.048, L = 3.683 W = 120, L = 145 TL219, TL228, TL233, 0.003 λ, 25.04 W W = 3.048, L = 0.254 W = 120, L = 10 TL234 TL220, TL229 0.016 λ, 25.04 W W = 3.048, L = 1.270 W = 120, L = 50 TL223 0.003 λ, 4.84 W W = 19.685, L = 0.254 W = 775, L = 10 TL232 TL230, TL236 W1 = 4.928, W2 = 3.048, W1 = 194, W2 = 120 TL235 W1 = 1.651, W2 = 2.540 W1 = 65, W2 = 100 TL238 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700

Data Sheet 10 of 14 Rev. 05, 2010-11-10 PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution RO4350, .020 (60) C208 C207 C201 C209 C206 C205 C210 C202 C204 PTFB211803_OUT_01 C203 b 2 1 1 8 0 3 e f l _ c d _ 1 1 - 0 8 - 2 0 1 0 RO4350, .020 (60) R804 R805 R801 R802 C802 C801 R803 C803 R101 R102 C101 C102 C105 C106 C108 C103 C107 C104 PTFB211803_IN_01 + S1 RF_IN RF_OUT VDD VDD VDD Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB211803EF Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Reference circuit assembly diagram (not to scale)

Confidential, Limited Internal Distribution Data Sheet 11 of 14 Rev. 05, 2010-11-10 Reference Circuit (cont.) Components Information Component Description Suggested Manufacturer P/N Input C101, C106, C107 Chip capacitor,10 pF ATC ATC100B100JW500XJ C102, C105 Chip capacitor, 0.1 μF Digi-Key PCC104BCT-ND C103, C104 Chip capacitor, 4.71 μF Digi-Key 493-2372-2-ND C108 Chip capacitor, 2.1 pF ATC ATC100B2R1BW500XB C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT-ND R101, R102, R802, R803 Resistor, 10 W Digi-Key P10ECT-ND R801 Resistor, 1300 W Digi-Key P1.3KGCT-ND R804 Resistor, 100 W Digi-Key P100ECT-ND R805 Resistor, 1200 W Digi-Key P1.2KGCT-ND S1 Transistor Digi-Key BCP56-ND S2 Voltage Regulator Digi-Key LM78L05ACM-ND S4 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND Output C201 Chip capacitor, 10 pF ATC ATC100B100JW500XJ C202, C210 Capacitor, 10 μF Digi-Key 587-1818-2-ND C203 Chip capacitor, 0.3 pF ATC ATC100B0R3BW500XB C204, C205 Capacitor, 100 μF Digi-Key PCE4442TR-ND C206, C208 Chip capacitor, 2.2 μF Digi-Key 445-1447-2-ND C207, C209 Chip capacitor, 1 μF Digi-Key 445-1411-2-ND

Data Sheet 12 of 14 Rev. 05, 2010-11-10 PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-6 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: A = gate, B = source, C = drain, D = VDD, E, F = N.C. 6. Gold plating thickness: 0.25 micron [10 microinch] max. +.254 –.127 +. 010 –.005 ] LC D G S CL 19.558±.510 [.770±.020] 27.940 [1.100] 2X 12.700 [.500] 45° X 2.032 [45° X .080] 4X 1.143 [.045] (4 PLS) 9.398 [.370] 9.779 [.385] 34.036 [1.340]1.016 [.040] 1.575 [.062] (SPH) 22.352±.200 [.880±.008] 4.039 [.159 2X 22.860 [.900] [.200] (2 PLS) CL 4.889±.510 [.192±.020] 4X R1.524 [R.060] 2X R1.626 [R.064] V E V F 4X 30° H -33288 - 6_ po _02 -18 - 2010 2X 5.080

Confidential, Limited Internal Distribution Data Sheet 13 of 14 Rev. 05, 2010-11-10 LC D G CL 19.558±.510 [.770±.020] 2X 12.700 [.500] 45° X 2.032 [45° X .080] 2X 1.143 [.045] 9.398 [.370] 9.779 [.385] 23.114 [.910] 1.016 [.040] 1.575 [.062] (SPH) 22.352±.200 [.880±.008] 4.039+.254 -.127 [.159+.010 -.005 ] 22.860 [.900] 2X 5.080 [.200] 4.889±.510 [.192±.020] V V S 2X 30° C 66065-A0003- C743- 01-0027 H- 34288- 4_2 .dw g LC 4X R0.508+.381 -.127 [R.020+.015 -.005 ] Package Outline Specifications (cont.) Package H-34288-4/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower

Data Sheet 14 of 14 Rev. 05, 2010-11-10 Edition 2010-11-10 Published by Infineon Technologies AG

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFB211803EL V1 / PTFB211803FL V2 Confidential, Limited Internal Distribution Revision History: 2010-11-10 Data Sheet Previous Version: 2010-08-25, Data Sheet Page Subjects (major changes since last revision) 1, 2, 12 Changed eared flange package type