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Document overview
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- PDF pages: 14
Technical content
Features
- Broadband internal matching
- Enhanced for use in DPD error correction systems
- Typical two-carrier WCDMA performance at 2170 MHz, 30 V - Average output power = 32 W - Linear Gain = 18 dB - Efficiency = 29% - Intermodulation distortion = –34 dBc - Adjacent channel power = –37 dBc
- Typical CW performance, 2170 MHz, 30 V - Output power at P 1dB = 150 W - Efficiency = 55%
- Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
- Integrated ESD protection
- Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power
- Pb-Free and RoHS compliant PTFB211503FL H-34288-4/2
Data Sheet 2 of 14 Rev. 04.1, 2016-06-14 PTFB211503EL PTFB211503FL RF Characteristics (cont.) Two-tone Measurement (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 150 W PEP , ƒ = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 18 — dB Drain Efficiency hD 39 40 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.08 — W Operating Gate Voltage VDS = 30 V, IDQ = 1.2 A VGS 1.6 2.1 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) RqJC 0.27 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping PTFB211503EL V1 R0 PTFB211503ELV1R0XTMA1 H-33288-6, bolt-down Tape & Reel, 50 pcs PTFB211503EL V1 R250 PTFB211503ELV1R250XTMA1 H-33288-6, bolt-down Tape & Reel, 250 pcs PTFB211503FL V2 R0 PTFB211503FLV2R0XTMA1 H-34288-4/2, earless flange Tape & Reel, 50 pcs PTFB211503FL V2 R250 PTFB211503FLV2R250XTMA1 H-34288-4/2, earless flange Tape & Reel, 250 pcs
Data Sheet 3 of 14 Rev. 04.1, 2016-06-14 31 33 35 37 39 41 43 45 47 49 Gain (dB) Output Power (dBm) Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84MHz Gain Efficiency Drain Efficiency (%) -55 -50 -45 -40 -35 -30 -25 31 33 35 37 39 41 43 45 47 49 Drain Efficiency (%) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
2170 Low
2140 Low
2110 Low
-60 -55 -50 -45 -40 -35 -30 -25 -20 31 33 35 37 39 41 43 45 47 49 Drain Efficiency (%) ACP (dBc) Output Power (dBm) Single-carrier WCDMA Drive-Up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 8 dB, BW 3.84 MHz ACP Low Efficiency ACP Up -50 -40 -30 -20 -10 2080 2100 2120 2140 2160 2180 2200 IRL (dB), ACP up (dBc) Frequency (MHz) Single-carrier WCDMA, 3GPP Broadband VDD = 30 V, IDQ = 1.20 A, POUT = 40 W Efficiency IRL ACP Gain (dB), Efficiency (%) Gain Typical Performance (data taken in a production test fixture)
Data Sheet 4 of 14 Rev. 04.1, 2016-06-14 PTFB211503EL PTFB211503FL 40 42 44 46 48 50 52 54 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz Efficiency Gain -65 -55 -45 -35 -25 -15 40 42 44 46 48 50 52 54 Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz Efficiency IMD3 -50 -45 -40 -35 -30 -25 -20 -15 -10 2070 2090 2110 2130 2150 2170 2190 2210 Frequency (MHz) Two-tone Broadband Performance VDD = 30 V, IDQ = 1.20 A, POUT = 63 W Gain Efficiency IRL IMD3 Return Loss (dB), IMD (dBc) Gain (dB), Efficiency (%) -70 -60 -50 -40 -30 -20 41 43 45 47 49 51 53 IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz 2170MHz 2140MHz 2110MHz Typical Performance (cont.)
Data Sheet 5 of 14 Rev. 04.1, 2016-06-14 41 43 45 47 49 51 53 Power Gain (dB) Output Power (dBm) CW Performance Gain vs. Output Power VDD = 30 V, ƒ = 2170 MHz IDQ = 1.40 A IDQ = 0.80 A IDQ = 1.20 A 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz Gain Efficiency +25ºC +85ºC –10ºC -70 -60 -50 -40 -30 -20 40 45 50 55 IMD (dBc) Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.20 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz 3rd Order 7th 5th Typical Performance (cont.)
Data Sheet 6 of 14 Rev. 04.1, 2016-06-14 PTFB211503EL PTFB211503FL 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.2 0.4 0.6 0.1 0.3 0.5 0.2 0.4 0.6 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.45 0.05 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 Nornalized to 50 Ohms b211503efl db211503efl Oct. 14, 2009 1:47:14 PM Z Source Z Load
2080 MHz
2200 MHz
Z0 = 50 W Z Source Z Load G S D Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 2200 2.06 –6.08 2.19 –4.73 2170 2.17 –6.33 2.19 –4.82 2140 2.30 –6.59 2.20 –4.91 2110 2.43 –6.86 2.21 –5.00 2080 2.58 –7.14 2.22 –5.09 See next page for reference circuit information
Data Sheet 7 of 14 Rev. 04.1, 2016-06-14 PTFB211503EL/FL_INPUT C101 10 pF C102 10 pF C801 1000 pF C802 1000 pF C803 1000 pF TL101 TL102 TL103 TL104 TL105 TL106 TL107 TL108 TL109 1 2 TL110 TL111 TL112TL113 TL114 TL115 TL116 TL117 TL118 TL119 TL120 TL121 TL122 TL123 TL124 TL125 TL126 TL127 TL128 TL129 R101
10 Ohm
1200 Ohm
1300 Ohm
100 Ohm R805
RF_IN In Out NC NC 2 3 4 56 7 TL140 C105 0.6 pF C106 2.2 pF C107 8.2 pF R104 S C B E b 2 1 1 5 0 3 e f l _ b d i n _ 0 8 - 1 9 - 2 0 1 0 GATE DUT (Pin G) Reference Circuit Reference circuit input schematic for ƒ = 2170 MHz Reference circuit output schematic for ƒ = 2170 MHz PTFB211503EL/FL_OUTPUT C201 1000000 pF C202 2200000 pF TL201TL202TL203 TL204 TL205TL206 TL207TL208TL209 TL210 TL211TL212 TL213 TL214 1 2 TL215 C203 10000000 pF TL216 TL217 TL218 1 2 TL219 1 2 TL220 1 2 TL221 TL222TL223 TL224 TL225TL226 TL227 TL228 C204 10000000 pF C205 10000000 pF C206 1000000 pF C207 8.2 pF 1 2 TL229 C208 0.5 pF TL230 C209 10000000 C210 2200000 pF TL231 b 2 1 1 5 0 3 e f l _ b d o u t _ 0 8 - 1 9 - 2 0 1 0 DUT (Pin V) DRAIN DUT (Pin D) DUT (Pin V) RF_OUT VDD VDD
Data Sheet 8 of 14 Rev. 04.1, 2016-06-14 PTFB211503EL PTFB211503FL Reference Circuit (cont.)
Description
DUT PTFB211503EL or PTFB211503FL PCB 0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101, TL129 0.095 λ, 54.17 W W = 1.016, L = 8.001 W = 40, L = 315 TL102 0.016 λ, 31.24 W W = 2.286, L = 1.270 W = 90, L = 50 TL103 0.026 λ, 54.17 W W = 1.016, L = 2.159 W = 40, L = 85 TL104 0.032 λ, 47.12 W W = 1.270, L = 2.692 W = 50, L = 106 TL105 0.005 λ, 6.67 W W = 13.970, L = 0.381 W = 550, L = 15 TL106 W1 = 13.970, W2 = 1.016, W3 = 13.970, W1 = 550, W2 = 40, W3 = 550, W4 = 1.016 W4 = 40 TL107, TL108, TL109 W = 1.016 W = 40 TL112 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500 TL113 W1 = 1.270, W2 = 2.286 W1 = 50, W2 = 90 TL114 0.031 λ, 34.72 W W = 1.981, L = 2.540 W = 78, L = 100 TL115 0.027 λ, 63.89 W W = 0.762, L = 2.286 W = 30, L = 90 TL116 0.096 λ, 63.89 W W = .762, L = 8.136 W = 30, L = 320 TL117 0.029 λ, 54.17 W W = 1.016, L = 2.451 W = 40, L = 97 TL118 0.018 λ, 54.17 W W = 1.016, L = 1.524 W = 40, L = 60 TL119 0.021 λ, 54.17 W W = 1.016, L = 1.727 W = 40, L = 68 TL120 0.026 λ, 54.17 W W = 1.016, L = 2.159 W = 40, L = 85 TL121, TL122 0.002 λ, 54.17 W W = 1.016, L = 0.127 W = 40, L = 5 TL123, TL124 0.030 λ, 54.17 W W = 1.016, L = 2.540 W = 40, L = 100 TL125 0.053 λ, 6.67 W W = 13.970, L = 4.064 W = 550, L = 160 TL126 0.012 λ, 54.17 W W = 1.016, L = 1.021 W = 40, L = 40 TL127 0.134 λ, 47.12 W W = 1.270, L = 11.151 W = 50, L = 439 TL128 0.012 λ, 54.17 W W = 1.016, L = 1.016 W = 40, L = 40 TL130, TL133 0.000 λ, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1 TL131 W1 = 10.922, W2 = 0.025, W3 = 10.922 W1 = 430, W2 = 1, W3 = 430, W4 = 0.025 W4 = 1 TL132, TL135 0.000 λ, 8.37 W W = 10.922, L = 0.000 W = 430, L = 0 TL140 0.021 λ, 63.89 W W = 0.762, L = 1.778 W = 30, L = 70 table continued on page 9
Data Sheet 9 of 14 Rev. 04.1, 2016-06-14 Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL203 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700 TL204 W1 = 1.651, W2 = 2.540 W1 = 65, W2 = 100 TL205 W1 = 1.270, W2 = 2.540 W1 = 50, W2 = 100 TL206 0.000 λ, 5.33 W W = 17.780, L = 0.025 W = 700, L = 1 TL207 0.047 λ, 47.12 W W = 1.270, L = 3.886 W = 50, L = 153 TL208 0.021 λ, 39.51 W W = 1.651, L = 1.753 W = 65, L = 69 TL209 0.057 λ, 4.84 W W = 19.685, L = 4.318 W = 775, L = 170 TL210, TL211 0.016 λ, 28.85 W W = 2.540, L = 1.270 W = 100, L = 50 TL212 0.035 λ, 39.51 W W = 1.651, L = 2.896 W = 65, L = 114 TL213 0.032 λ, 16.90 W W = 4.928, L = 2.540 W = 194, L = 100 TL214 0.032 λ, 17.05 W W = 4.877, L = 2.540 W = 192, L = 100 TL216, TL217 0.095 λ, 25.04 W W = 3.048, L = 7.645 W = 120, L = 301 TL218, TL230 W = 3.048 W = 120 TL222, TL224 0.067 λ, 25.04 W W = 3.048, L = 5.359 W = 120, L = 211 TL223, TL226 0.010 λ, 25.04 W W = 3.048, L = 0.762 W = 120, L = 30
Data Sheet 10 of 14 Rev. 04.1, 2016-06-14 PTFB211503EL PTFB211503FL Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB211503EF Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Reference circuit assembly diagram (not to scale) 10 µF 10 µF C102 R804 R803 R802 R801 R805 C801 C802 C803 C101 C103 C104 C105 C106 C107 R101 R104 C201 C205 C202 C208 C209 C210 C203 C206 C204 C207 b 2 1 1 5 0 3 e f l _ C D _ 1 1 - 1 0 - 2 0 1 0 PTFB211503_OUT_02PTFB211503_IN_02 RO4350, .030 (60) RO4350, .030 (60) RF_IN RF_OUT VDD VDD VDD
Data Sheet 11 of 14 Rev. 04.1, 2016-06-14 Reference Circuit (cont.) Component Information Component Description Suggested Manufacturer P/N Input C101, C102 Chip capacitor, 10 pF ATC ATC100A100FW150XB C103, C104 Chip capacitor, 4.71 µF Digi-Key 493-2372-2-ND C105 Chip capacitor, 0.6 pF ATC ATC100B0R6BW500XB C106 Chip capacitor, 2.2 pF ATC ATC100B2R2BW500XB C107 Chip capacitor, 8.2 pF ATC ATC100B8R2BW500XB C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT -ND R101, R104, R803, R805 Resistor, 10 W Digi-Key P10ECT -ND R801 Resistor, 1200 W Digi-Key P1.2KGCT -ND R802 Resistor, 1300 W Digi-Key P1.3KGCT -ND R804 Resistor, 100 W Digi-Key P100ECT -ND S1 Voltage Regulator Digi-Key LM78L05ACM-LD S2 Transistor Digi-Key BCP5616TA-ND S3 Potentiometer, 2k W Digi-Key 3224W-202ECT -ND Output C201, C206 Chip capacitor, 1 µF Digi-Key 445-1411-2-ND C202, C210 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND C203, C209 Capacitor, 10 µF Digi-Key 281M5002106K C204, C205 Capacitor, 10 µF Digi-Key 587-1818-2-ND C207 Chip capacitor, 8.2 pF ATC ATC100B8R2BW500XB C208 Chip capacitor, 0.5 pF ATC ATC100B0R5BW500XB
Data Sheet 12 of 14 Rev. 04.1, 2016-06-14 PTFB211503EL PTFB211503FL 22.352±.200 [.880±.008] 34.036 [1.340] LC 1.016 [.040] 1.575 [.062] (SPH) 4.039+.254 -.127 [.159+.010 -.005 ] D G VV FE LC 19.558±.510 [.770±.020] 9.779 [.385]9.398 [.370]LC 2X 12.700 [.500] 4X 30° 2X 22.860 [.900] 27.940 [1.100] 2X R1.626 [R.064] 45° X 2.032 [45° X .080] 4.889±.510 [.192±.020] 4X 1.143 [.045] (4 PLS) 2X 5.080 [.200] (2 PLS) 4X R1.524 [R.060] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD; E, F – N.C. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Package Outline Specifications Package H-33288-6 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: A = gate, B = source, C = drain, D = VDD, E, F = N.C. 6. Gold plating thickness: 0.25 micron [10 microinch] max.
Data Sheet 13 of 14 Rev. 04.1, 2016-06-14 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD 6. Gold plating thickness: 0.25 micron [10 microinch] max. 23.114 [.910] 1.016 [.040] 1.575 [.062] (SPH) 22.352±.200 [.880±.008] 4.039+.254 -.127 [.159+.010 -.005 ] S LC LC D G CL 19.558±.510 [.770±.020] 2X 12.700 [.500] 45° X 2.032 [45° X .080] 2X 1.143 [.045] 9.398 [.370] 9.779 [.385] 22.860 [.900] 2X 5.080 [.200] 4.889±.510 [.192±.020] V V 2X 30° 4X R0.508+.381 -.127 [R.020+.015 -.005 ] Package Outline Specifications (cont.) Package H-34288-4/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet 14 of 14 Rev. 04.1, 2016-06-14 Edition 2016-06-14 Published by Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFB211503EL V1 / PTFB211503FL V2 Revision History: 2016-06-14 Data Sheet Previous Version: 2011-03-07, Data Sheet Page Subjects (major changes since last revision)