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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

  • Broadband internal matching
  • Typical single-carrier WCDMA performance at

2170 MHz, 28 V

  • Average output power = 25 W - Linear Gain = 18.5 dB - Efficiency = 32.5% - Adjacent channel power = –37 dBc
  • Typical CW performance, 2170 MHz, 28 V - Output power at P 1dB = 80 W - Efficiency = 55%
  • Integrated ESD protection
  • Capable of handling 10:1 VSWR @ 28 V,

80 W (CW) output power

  • Pb-free and RoHS compliant -50 -45 -40 -35 -30 -25 -20 -15 36 37 38 39 40 41 42 43 44 45 46 47 48 Efficiency (%) ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 2140 MHz, 10 MHz Spacing, 8dB PAR Adj Lower Adj Upper Alt Efficiency

Data Sheet 2 of 11 Rev. 01.1, 2016-06-14 PTFB210801FA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 30 V, IDQ = 750 mA VGS 2.3 3.0 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 80 W CW) RqJC 0.50 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTFB210801FA V1 R0 PTFB210801FAV1R0XTMA1 H-37265-2, earless flange Tape & Reel, 50 pcs PTFB210801FA V1 R250 PTFB210801FAV1R250XTMA1 H-37265-2, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 11 Rev. 01.1, 2016-06-14 Typical Performance (data taken in a production test fixture) -50 -45 -40 -35 -30 -25 -20 -15 36 37 38 39 40 41 42 43 44 45 46 47 48 Efficiency (%) ACPR (dBc) Output Power (dBm) Two-carrier WCDMA vs. Frequency VDD = 28 V, IDQ = 750 mA,

10 MHz Spacing, PAR = 8 dB

Eff.2110 MHz Eff.2170 MHz 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 39 40 41 42 43 44 45 46 47 48 49 50 51 Gain (dB) Output Power (dBm) CW Performance vs. Temperature VDD = 28 V, IDQ = 750 mA, ƒ = 2140 MHz Gain Efficiency Efficiency (%) -25°C 25° C 85° C -30 -25 -20 -15 -10 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 Input Return Loss (dB) Power Gain (dB) Frequency (GHz) Single Side Small Signal CW Gain & Input Return Loss VDD = 28 V, IDQ = 750 mA IRL Gain 17.0 17.5 18.0 18.5 19.0 19.5 20.0 39 40 41 42 43 44 45 46 47 48 49 50 51 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Gain & Efficiency vs. Output Power & VDD ƒ = 2140 MHz, IDQ = 750 mA VDD = 30 V VDD = 28 V

Data Sheet 4 of 11 Rev. 01.1, 2016-06-14 PTFB210801FA Z Source Z Load G S D Typical Performance (cont.) 16.5 17.5 18.5 19.5 39 40 41 42 43 44 45 46 47 48 49 50 51 Drain Efficiency (%) Gain (dB) Output Power (dBm) CW Sweep at P1dB vs. Frequency VDD = 28 V, IDQ = 750 mA, T = 25°C Gain Efficiency 2110 MHz

2140 MHz

2170 MHz

17.5 18.5 39 40 41 42 43 44 45 46 47 48 49 50 51 Gain (dB) Average Output Power (dBm) CW Performance at Various IDQ ƒ = 2170 MHz VDD = 28 V, IDQ = Varying 620mA 720mA 820mA 920mA Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX

Data Sheet 5 of 11 Rev. 01.1, 2016-06-14 R801

3000 Ohm R102

2000 Ohm

10 Ohm

S C B E C801 1000 pF C802 1000 pF C803 1000 pF C101 10000000 pF TL103 TL104 R802

1300 Ohm

1200 Ohm

TL105 TL106TL107 TL108TL109 1 2 TL112 TL113 R104 1.5 pF C102 15 pF TL110 R103 b 2 1 0 8 0 1 f a _ b d i n _ 0 3 - 1 5 - 2 0 1 1 RF_IN GATE DUT (Pin G) TL208 TL207 TL209 C201 10000000 pF C203 10000000 pF TL221 TL222 1 2 TL212 TL213 TL214 TL215TL216 1 2 TL217 TL218 TL219 TL220TL201 TL202 TL203 TL204 TL205 4TL206 C209 15 pF C208 2.2 pF TL223TL224 C206 2.7 pF C207 2.7 pF TL228 TL210TL227 TL211 C205 22000000 pF TL226 TL225 C210 22000000 pF C211 4710000 pF C202 4710000 pF C212 18 pF C204 18 pF b 2 1 0 8 0 1 f a _ b d o u t _ 0 3 - 1 5 - 2 0 1 1 DRAIN DUT (Pin D) RF_OUT Reference Circuit Reference circuit input schematic for ƒ = 2170 MHz Reference circuit output schematic for ƒ = 2170 MHz er = 3.66 H = 20 mil RO/RO4350B1 er = 3.66 H = 20 mil RO/RO4350B1

Data Sheet 6 of 11 Rev. 01.1, 2016-06-14 PTFB210801FA Reference Circuit (cont.)

Description

PCB 0.508 mm [.020"] thick, er = 3.66, Rogers 4350, 1 oz. copper Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL103 0.021 λ, 54.17 W W = 1.016, L = 1.778 W = 40, L = 70 TL104 W1 = 9.398, W2 = 1.270, W3 = 9.398, W1 = 370, W2 = 50, W3 = 370, W4 = 1.270 W4 = 40 TL105 W1 = 1.024, W2 = 9.398 W1 = 40, W2 = 370 TL106 W1 = 9.398, W2 = 9.398 W1 = 370, W2 = 370 TL107 0.050 λ, 53.93 W W = 1.024, L = 4.153 W = 40, L = 164 TL108 0.025 λ, 9.59 W W = 9.398, L = 1.905 W = 370, L = 75 TL109 0.019 λ, 53.93 W W = 1.024, L = 1.605 W = 40, L = 63 TL110 0.092 λ, 53.93 W W = 1.024, L = 7.696 W = 40, L = 303 TL111 0.072 λ, 53.93 W W = 1.024, L = 5.994 W = 40, L = 236 TL113 0.212 λ, 47.12 W W = 1.270, L = 17.577 W = 50, L = 692 TL118, TL120 0.004 λ, 35.71 W W = 1.905, L = 0.361 W = 75, L = 14 TL119 0.021 λ, 54.17 W W = 1.016, L = 1.778 W = 40, L = 70 TL124 0.039 λ, 35.71 W W = 1.905, L = 3.172 W = 75, L = 125 TL125 0.048 λ, 47.12 W W = 1.270, L = 4.013 W = 50, L = 158 TL126 0.071 λ, 47.12 W W = 1.270, L = 5.906 W = 50, L = 233 TL127, TL128 0.005 λ, 47.12 W W = 1.270, L = 0.406 W = 50, L = 16 TL129 W1 = 1.024, W2 = 2.032 W1 = 40, W2 = 80 TL130, TL131 0.012 λ, 34.08 W W = 2.032, L = 1.016 W = 80, L = 40 TL132 W1 = 2.032, W2 = 1.024 W1 = 80, W2 = 40 table continued on page 7

Data Sheet 7 of 11 Rev. 01.1, 2016-06-14 Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL201, TL203 0.009 λ, 47.12 W W = 1.270, L = 0.762 W = 50, L = 30 TL202, TL204 0.064 λ, 47.12 W W = 1.270, L = 5.334 W = 50, L = 210 TL205, TL206 W1 = 1.905, W2 = 2.540, W3 = 1.905 W1 = 75, W2 = 100, W3 = 75, W4 = 2.540 W4 = 100 TL207 W1 = 9.398, W2 = 1.270, W3 = 9.398 W1 = 370, W2 = 50, W3 = 370, W4 = 1.270 W4 = 50 TL208, TL209 W = 1.270 W = 50 TL210 W1 = 0.002, W2 = 0.005, Offset = 0.001 W1 = 2, W2 = 184, Offset = 55 TL211, TL225 0.172 λ, 17.67 W W = 4.674, L = 13.564 W = 184, L = 534 TL213 W1 = 9.398, W2 = 0.889, W3 = 9.398 W1 = 370, W2 = 35, W3 = 370, W4 = 0.889 W4 = 35 TL214 0.016 λ, 9.59 W W = 9.398, L = 1.219 W = 370, L = 48 TL215 0.032 λ, 53.93 W W = 1.024, L = 2.713 W = 40, L = 107 TL216 0.185 λ, 53.93 W W = 1.024, L = 15.491 W = 40, L = 610 TL218 W1 = 9.398, W2 = 9.398 W1 = 370, W2 = 370 TL219 W1 = 1.024, W2 = 9.398 W1 = 40, W2 = 370 TL220, TL227 0.068 λ, 35.71 W W = 1.905, L = 5.588 W = 75, L = 220 TL223 0.012 λ, 53.93 W W = 1.024, L = 0.991 W = 40, L = 39 TL224 0.011 λ, 9.59 W W = 9.398, L = 0.813 W = 370, L = 32 TL226 W1 = 0.002, W2 = 0.005, Offset = –0.001 W1 = 2, W2 = 184, Offset = –55

Data Sheet 8 of 11 Rev. 01.1, 2016-06-14 PTFB210801FA Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB210801FA Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Reference circuit assembly diagram (not to scale) RO4350, .020 (60) PTFB210801_IN_01 PTFB210801_OUT_01 b 2 1 0 8 0 1 f a _ c d _ 0 3 - 1 5 - 2 0 1 1 RO4350, .020 (60) C103 R104 C102 C104 C105 R103 C101 R101 R801 R102 S3 S5 R804 R803 R802C802C803 C801 C201 C205 C206 C204 C211 C202 C212 C208 C209 C210 C203 C207

Data Sheet 9 of 11 Rev. 01.1, 2016-06-14 Reference Circuit (cont.) Components Information Component Description Suggested Manufacturer P/N Input C101, C103 Capacitor, 10 µF Digi-Key 490-4393-2-ND C102, C105 Chip capacitor, 15 pF ATC 800A150GT C104 Chip capacitor, 1.5 pF ATC 800A1T5GR C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT -ND L1, L2 Inductor, 22 nH Coilcraft 0805CS-220X_BG R101, R103, R104 Resistor, 10 W Digi-Key P10GCT -ND R102, R804 Resistor, 2000 W Digi-Key P2.0KECT -ND R801 Resistor, 3000 W Digi-Key P3.0KECT -ND R802 Resistor, 1300 W Digi-Key P1.3KGECT -ND R803 Resistor, 1200 W Digi-Key P1.2KGECT -ND S1, S2 EMI Suppression Capacitor Digi-Key NFM18PS105R0J3D S3 Potentiometer, 2k W Digi-Key 3224W-202ECT -ND S4 Voltage Regulator Digi-Key LM7805 S5 Transistor Digi-Key BCP56 Output C201, C203 Capacitor, 10 µF Digi-Key 587-1818-2-ND C202, C211 Chip capacitor, 4.71 µF ATC 490-1864-2-ND C204, C212 Chip capacitor, 18 pF ATC 800A180JT C205, C210 Capacitor, 22 µF Digi-Key PCE4444TR-ND C206, C207 Chip capacitor, 2.7 pF ATC 800A2R7BT C208 Chip capacitor, 2.2 pF ATC 800A2R2BT C209 Chip capacitor, 15 pF ATC 800A150GT

Data Sheet 10 of 11 Rev. 01.1, 2016-06-14 PTFB210801FA Package Outline Specifications Package H-37265-2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain, S = source, G = gate. 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] D G 2X 7.11 [.280] LID 10.16±.25 [.400±.010] 15.49±.51 [.610±.020] FLANGE 10.16 [.400] 45° X 2.03 [.080] 2.66±.51 [.105±.020] 4X R0.63 [R.025] MAX ALL FOUR CORNERS SPH 1.57 [.062] 1.02 [.040] 10.16 [.400] S LC LC 3.61±.38 [.142±.015] 10.16±.25 [.400±.010] 2X 7.11 [.280] 45° X 2.03 [.080] 3.05 [.120] CL CL FLANGE 9.78 [.385] 2X R1.52 [R.060] 4X R0.63 [R.025] MAX D S G 15.49±.51 [.610±.020] 4X R1.52 [R.060] LID 10.16±.25 [.400±.010] 2.66±.51 [.105±.020] ALL FOUR CORNERS 15.23 [.600] SPH 1.57 [.062] 20.31 [.800] 1.02 [.040] 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] h - 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

Data Sheet 11 of 11 Rev. 01.1, 2016-06-14 Edition 2016-06-14 Published by Infineon Technologies AG

81726 Munich, Germany

© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFB210801FA V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2011-03-30 Production All Data Sheet reflects advance specification for product development 01.1 2016-06-14 Production 2 Updated ordering information