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- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 14
Technical content
Features
- Broadband internal matching
- Wide video bandwidth
- Typical single-carrier WCDMA performance,
1990 MHz, 30 V
- Output power = 100 W - Efficiency = 33% - Gain = 19 dB - PAR = 7.5 dB @ 0.01% CCDF - ACPR @ 5 MHz = –35 dBc
- Increased negative gate-source voltage range for improved performance in Doherty amplifiers
- Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power
- Integrated ESD protection
- Excellent thermal stability
- Pb-free and RoHS compliant PTFB193404F Package H-37275-6/2
Data Sheet 2 of 14 Rev. 05.2, 2016-06-14 PTFB193404F RF Characteristics (cont.) Two-carrier WCDMA Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.0 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 19 — dB Drain Efficiency ηD — 29 — % Intermodulation Distortion IMD — –33 — dBc Two-tone Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 265 W PEP , ƒ = 1990 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 19 — dB Drain Efficiency ηD — 36 — % Intermodulation Distortion IMD — 30 — dBc DC Characteristics (both sides) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 0.2 °C/W
Data Sheet 3 of 14 Rev. 05.2, 2016-06-14 PTFB193404F -45 -40 -35 -30 -25 D (dBc) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz IM3 Low IM3 Up -60 -55 -50 36 38 40 42 44 46 48 50 52 IM Average Output Power (dBm) 1990 1960 1930 Typical Performance (data taken in production test fixture)
Ordering Information
Type and Version Order Code Package Description Shipping PTFB193404F V1 R0 PTFB193404FV1R0XTMA1 H-37275-6/2, earless flange Tape & reel, 50 pcs PTFB193404F V1 R250 PTFB193404FV1R250XTMA1 H-37275-6/2, earless flange Tape & reel, 250 pcs ficiency (%) Gain (dB) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz Gain Efficiency 36 38 40 42 44 46 48 50 52 Eff G Average Output Power (dBm)
Data Sheet 4 of 14 Rev. 05.2, 2016-06-14 PTFB193404F Typical Performance (cont.) -20 -10 Two-tone Broadband Performance VDD = 30 V, IDQ = 2.6 A, POUT = 52 dBm Efficiency Return Loss IMD3 oss (dB) / IMD (dBc) B) / Efficiency (%) -50 -40 1840 1900 1960 2020 2080 Frequency (MHz) Gain IMD3 Return Lo Gain (dB ency (%) ain (dB) Two-tone Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ1 = 1989 MHz, ƒ2 = 1990 MHz Gain 40 44 48 52 56 Effici G Output Power, PEP (dBm) Efficiency ciency (%) Gain (dB) Two-tone Drive-up (over temperature) (POUT-max 3rd order IMD @ –30 dBc) VDD = 30 V, IDQ = 2.6 A, ƒ1 = 1959 MHz, ƒ2 = 1960 MHz Gain 39 41 43 45 47 49 51 53 55 57 Effi G Output Power, PEP (dBm) +25C +85C –30C Efficiency -45 -35 -25 ciency (%) IMD (dBc) Two-tone Drive-up VDD = 30 V, IDQ = 2.6 A,, ƒ1 = 1989 MHz, ƒ2 = 1990 MHz 3rd Order IMD Efficiency -65 -55 39 44 49 54 Effic Output Power, PEP. (dBm)
Data Sheet 5 of 14 Rev. 05.2, 2016-06-14 PTFB193404F Typical Performance (cont.) -45 -35 -25 -15 MD (dBc) Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 2.6 A, ƒ1 = 1989 MHz, ƒ2 = 1990 MHz 3rd Order 7th 5th -75 -65 -55 39 41 43 45 47 49 51 53 55 57 IM Output Power, PEP (dBm) -40 -30 -20 -10 MD (dBc) Intermodulation Distortion vs. Tone Spacing VDD = 30 V, IDQ = 2.6 A, ƒ = 1930 MHz, POUT = 317 W (PEP) IMD7 IMD5 IMD3 -70 -60 -50 1 10 100 IM Two Tone Spacing (MHz) IMD7 IMD Lower IMD Upper -40 -30 -20 Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 43% clipping, PAR = 7.5 dB, 3.84 MHz BW nnel Power Ratio (dB) Efficiency ACPR Up -60 -50 36 38 40 42 44 46 48 50 52 Drain E Average Output Power (dBm) Adjacent Chan ACPR Up ACPR Low -50 -40 -30 -20 d Order (dBc) Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz -70 -60 39 41 43 45 47 49 51 53 55 57 IMD 3rd Output Power, PEP (dBm)
1990 MHz
1960 MHz
1930 MHz
Data Sheet 6 of 14 Rev. 05.2, 2016-06-14 PTFB193404F Typical Performance (cont.) -10 y (%) / ACP (dBc) B) / PARC Gain (dB) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1930 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz PARC @ .01% CCDF Efficiency Gain -70 -50 -30 36 38 40 42 44 46 48 50 52 54 Efficiency PARC (dB Average Output Power (dBm) ACP -10 (%) / ACP (dBc) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz PARC @ 01% CCDF Efficiency Gain / PARC Gain (dB) -70 -50 -30 36 38 40 42 44 46 48 50 52 54 Efficiency ( Average Output Power (dBm) ACP PARC @ .01% CCDF PARC (dB) -10 y (%) / ACP (dBc) / PARC Gain (dB) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1960 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz PARC @ .01% CCDF Efficiency Gain -70 -50 -30 36 38 40 42 44 46 48 50 52 54 Efficiency PARC (dB) Average Output Power (dBm) ACP PARC @ .01% CCDF -20 -10 ss (dB) / ACP (dBc) dB) / Efficiency (%) Single-carrier WCDMA Broadband VDD = 30 V, IDQ = 2.6 A, POUT = 125 W, 3GPP WCDMA signal Efficiency Gain IRL -40 -30 1840 1900 1960 2020 2080 Return Los Gain, PARC (d Frequency (MHz) ACP PARC @ .01% CCDF
Data Sheet 7 of 14 Rev. 05.2, 2016-06-14 PTFB193404F Broadband Circuit Impedance (measurements taken on full part, both sides) Frequency Z Source Ω Z Load Ω MHz R jX R jX 1900 1.21 –3.60 0.73 –2.08 1930 1.21 –3.53 0.72 –2.01 1960 1.20 –3.47 0.72 –1.94 1990 1.20 –3.41 0.72 –1.87 2020 1.19 –3.35 0.72 –1.81 See next page for circuit information
Data Sheet 8 of 14 Rev. 05.2, 2016-06-14 PTFB193404F Reference Circuit TL101 TL102 TL103 TL104 TL105 R802
1300 Ohm
10 Ohm
1200 Ohm
TL111 TL112 TL113 TL114 TL115 C101 1000000 pF TL116 TL117 TL118 TL119 S C B E 4S2 C801 1000000 pF C802 10000000 pF C102 1000000 pF R103 1.5 pF C804 10000000 pF TL120 1 2 TL121 TL122 TL123 1 2 TL124 R801
100 Ohm
RF_IN b 1 93 4 0 4F - v1 _ B D o ut _1 2 - 1 6 - 2 0 10 Gate DUT (Pin G1) Gate DUT (Pin G2) Reference circuit input schematic for ƒ = 1990 MHz εr = 3.48 H = 20 mil RO/RO4350 B1
Data Sheet 9 of 14 Rev. 05.2, 2016-06-14 PTFB193404F Reference circuit output schematic for ƒ = 1990 MHz Reference Circuit Assembly DUT PTFB193404F Test Fixture Part No. LTN/PTFB193404EF PCB Rogers RO4350, 0.508 mm [0.020”] thick, 1 oz. copper, εr = 3.48 Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Transmission Electrical Dimensions: W, L (mm) Dimensions: W, L (mils) Line Characteristics Input TL102 0.039 λ, 47.12 Ω W = 1.270, L = 3.553 W = 50, L = 140 TL103 0.023 λ, 47.12 Ω W = 1.270, L = 2.055 W = 50, L = 81 TL104 0.013 λ, 47.12 Ω W = 1.270, L = 1.168 W = 50, L = 46 TL105 0.122 λ, 7.29 Ω W = 12.700, L = 10.160 W = 500, L = 400 TL106 W1 = 0.010, W2 = 1.168, Offset = 5.893 W1 = 10, W2 = 46, Offset = 232 TL107 W1 = 0.010, W2 = 1.168, Offset = –5.893 W1 = 10, W2 = 46, Offset = –232 TL108 0.007 λ, 34.08 Ω W = 2.032, L = 0.635 W = 80, L = 25 TL109 0.012 λ, 34.08 Ω W1 = 2.032, W2 = 1.034 W1 = 80, W2 = 41 TL110 0.055 λ, 53.60 Ω W = 1.034, L = 5.029 W = 41, L = 198 TL111 0.023 λ, 47.12 Ω W = 1.270, L = 2.111 W = 50, L = 83 TL112 0.017 λ, 47.12 Ω W = 1.270, L = 1.524 W = 50, L = 60 TL113 0.023 λ, 47.12 Ω W = 1.270, L = 2.055 W = 50, L = 81 table continued on next page Reference Circuit (cont.) TL201TL202 C201 0.8 pF TL203 TL204 TL205 TL206TL207 TL208 TL209 TL210 TL211TL212 DCVS DCVS TL213 TL214 TL215 TL216 TL217 TL218TL219 C202 100000000 pF TL220 C203 100000000 pF 3TL221 3TL222 3TL223 3TL224 3TL225 TL226 TL227 PORT C204 18 pF C205 18 pF C206 4700000 pF C207 4700000 pF C208 4700000 pF C209 4700000 pF C210 10000000 pF C211 10000000 pF C212 10000000 pF C213 10000000 pF b 1 9 3 4 0 4 F - v1 _ B D o u t _ 1 2- 1 6- 2 0 1 0 RF_OUT VDD VDD Drain DUT (Pin D1) Drain DUT (Pin D2) Drain VDD (Pin V1) Drain VDD (Pin V2) εr = 3.48 H = 20 mil RO/RO4350 B1
Data Sheet 10 of 14 Rev. 05.2, 2016-06-14 PTFB193404F Reference Circuit (cont.) Transmission Electrical Dimensions: W, L (mm) Dimensions: W, L (mils) Line Characteristics Input (cont.) TL114 0.013 λ, 47.12 Ω W = 1.270, L = 1.168 W = 50, L = 46 TL115 0.122 λ, 7.29 Ω W = 12.700, L = 10.160 W = 500, L = 400 TL116 0.068 λ, 47.12 Ω W = 1.270, L = 6.170 W = 50, L = 243 TL117 0.032 λ, 47.12 Ω W = 1.270, L = 2.875 W = 50, L = 113 TL118 0.024 λ, 47.12 Ω W = 1.270, L = 2.131 W = 50, L = 84 TL119 0.017 λ, 47.12 Ω W = 1.270, L = 1.524 W = 50, L = 60 TL120 0.084 λ, 53.60 Ω W = 1.034, L = 7.671 W = 41, L = 302 W4 = 1.270 W4 = 50 TL123 0.032 λ, 47.12 Ω W = 1.270, L = 2.896 W = 50, L = 114 Output TL201 W1 = 1.577, W2 = 1.046 W1 = 62, W2 = 41 TL202 W1 = 2.263, W2 = 1.577 W1 = 89, W2 = 62 TL204 0.139 λ, 31.48 Ω W = 2.263, L = 12.299 W = 89, L = 484 TL205 W1 = 0.001, W2 = 13.335, Offset = –6.223 W1 = 1, W2 = 525, Offset = –245 TL206 W1 = 3.048, W2 = 2.263 W1 = 120, W2 = 89 TL207 0.009 λ, 25.04 Ω W = 3.048, L = 0.762 W = 120, L = 30 TL208 0.266 λ, 40.78 Ω W = 1.577, L = 23.889 W = 62, L = 941 TL209 0.160 λ, 6.97 Ω W = 13.335, L = 13.335 W = 525, L = 525 TL210 0.160 λ, 6.97 Ω W = 13.335, L = 13.335 W = 525, L = 525 TL211 0.151 λ, 53.21 Ω W = 1.046, L = 13.774 W = 41, L = 542 TL212 0.120 λ, 31.48 Ω W = 2.263, L = 10.617 W = 89, L = 418 TL218 0.116 λ, 19.85 Ω W = 4.064, L = 10.008 W = 160, L = 394 TL219 0.052 λ, 19.85 Ω W = 4.064, L = 4.470 W = 160, L = 176 TL220 0.116 λ, 19.85 Ω W = 4.064, L = 10.008 W = 160, L = 394 TL226 0.052 λ, 19.85 Ω W = 4.064, L = 4.470 W = 160, L = 176 TL227 W1 = 0.001, W2 = 13.335, Offset = 6.223 W1 = 1, W2 = 525, Offset = 245
Data Sheet 11 of 14 Rev. 05.2, 2016-06-14 PTFB193404F Reference circuit assembly diagram (not to scale) Component ID Description Suggested Manufacturer P/N C101, C102 Chip capacitor, 1 µF ATC NFM18PS105R0J30 C103, C104 Capacitor, 10 µF Digi-Key 490-4393-2-ND C105, C106, Capacitor, 18 pF ATC 800A180JT C204, C205 C107 Capacitor, 1.5 pF ATC 800A1R5BT C801 Capacitor, 1 µF Digi-Key 490-4736-2-ND C802, C804 Capacitor, 10 µF Digi-Key 587-1818-2-ND C803 Chip capacitor, 1000 pF Digi-Key PCC1772CT -ND L101, L102 Inductor, 22 nH Digi-Key 0805W220JT R101, R102 Resistor, 1000 Ω Digi-Key P1.0KECT -ND R103, R104 Resistor, 10 Ω Digi-Key P10GTR-ND R801 Resistor, 100 Ω Digi-Key P100GTR-ND R802 Resistor, 1300 Ω Digi-Key P1.3KGTR-ND R803 Resistor, 10 Ω Digi-Key P101GTR-ND R804 Resistor, 1200 Ω Digi-Key P1.2KGTR-ND S1 Potentiometer Digi-Key 3224W-202ECT -ND S2 Transistor Digi-Key BCP56-ND, BCP56 S3 Voltage regulator Digi-Key LM780L05ACM-ND, 7805 C201 Capacitor, 0.8 pF ATC 800A0R8BT C202, C203 Capacitor, 100 µF Digi-Key PCE4442TR-ND C206, C207, Capacitor, 4.7 µF Digi-Key 490-1864-2-ND C208, C209 C210, C211, Capacitor, 10 µF Digi-Key 587-1818-2-ND C212, C213 b1 9 3 4 0 4 f - v 1 _ C D _1 2 - 1 6 - 2 0 1 0 C209 RF_OUTRF_IN C207 C210 C203 C202 C212 C208 C102 C101 C211 C201 C204 R104 R802 C105 C801 C104 C206 C106C107 R803 C803 C103 C205 L102 C104 R801 R103 C802 R804 .020 VDD VDD PTFB193404_IN_01 PTFB193404_OUT_01 C213 L101 .020 (60)RO4350, .020 (63) VDD RO4350, Reference Circuit (cont.)
Data Sheet 12 of 14 Rev. 05.2, 2016-06-14 PTFB193404F Pinout Diagram Package H-37275-6/2 Pin Description V1 VDD device 1 V2 VDD device 2 D1 Drain device 1 D2 Drain device 2 G1 Gate device 1 G2 Gate device 2 S Source (flange) See next page for package outline specifications
Data Sheet 13 of 14 Rev. 05.2, 2016-06-14 PTFB193404F Package Outline Specifications Package H-37275-6/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 - drain, devices 1 & 2; G1, G2 - gate, devices 1 & 2; V1, V2 - VDD, devices 1 & 2; S - source (flange). 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V1, V2 – VDD 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. G1 G2 D2D1 V2 32.258 [1.270] 1.626 [0.064] 10.160 [.400] 4X 11.684 [.460] 2X 45° X 1.19 [45° X .047] 2X 1.143 [.045] 16.612±.500 [.654±.020] 9.398 [.370] CL 13.716 [.540] 9.144 [.360] 2X 3.175 [.125] 2X 30° 31.750 [1.250] 2X 2.032 [.080] REF 2.134 [.084] SPH 3.226±0.508 [.127±.020] 31.242±0.280 [1.230±.011] 4.585+0.250 -0.127 [ .180 +.010 -.005 ] S 4X R0.508 +.381 -.127 [R.020+.015 -.005 ] CL CL CL CL
81726 Munich, Germany
© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Y our Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFB193404F V1 Page Subjects (major changes since last revision) Data Sheet 14 of 4 Rev. 05.2, 2016-06-14 Revision History: 2016-06-14 Data Sheet Previous Version: 2011-05-13 Data Sheet