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Document overview
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- PDF pages: 15
Technical content
Features
- Broadband internal input and output matching
- Enhanced for use in DPD error correction systems
- Typical two-carrier WCDMA performance, 30 V,
1990 MHz
- Average output power = 50 W - Linear gain = 19 dB - Drain efficiency = 28 % - Intermodulation distortion = –35 dBc
- Typical CW performance, 1990 MHz, 30 V - Output power at P 1dB = 240 W - Efficiency = 55%
- Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
- Integrated ESD protection. Human Body Model, Class 2 (minimum)
- Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power
- Pb-free, RoHS-compliant PTFB192503FL Package H-34288-4/2 33 35 37 39 41 43 45 47 49 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing BW 3.84MHz Efficiency Gain
Data Sheet 2 of 15 Rev. 09.1, 2016-06-13 PTFB192503EL PTFB192503FL RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.9 A, POUT = 220 W PEP , ƒ = 1990 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency hD 40 41.5 — % Intermodulation Distortion IMD — –29 –27 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.03 — W Operating Gate Voltage VDS = 30 V, IDQ = 1.9 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) RqJC 0.262 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping PTFB192503EL V1 R0 PTFB192503ELV1R0XTMA1 H-33288-6, bolt-down Tape & Reel, 50pcs PTFB192503EL V1 R250 PTFB192503ELV1R250XTMA1 H-33288-6, bolt-down Tape & Reel, 250pcs PTFB192503FL V2 R0 PTFB192503FLV2R0XTMA1 H-34288-4/2, earless Tape & Reel, 50pcs PTFB192503FL V2 R250 PTFB192503FLV2R250XTMA1 H-34288-4/2, earless Tape & Reel, 250pcs
Data Sheet 3 of 15 Rev. 09.1, 2016-06-13 Typical Performance (data taken in a production test fixture) -60 -55 -50 -45 -40 -35 -30 -25 33 35 37 39 41 43 45 47 49 IMD (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.85 A, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing BW 3.84 MHz
1990 Lower
1990 Upper
1960 Lower
1960 Upper
1930 Lower
1930 Upper
-60 -55 -50 -45 -40 -35 -30 -25 -20 33 35 37 39 41 43 45 47 49 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz Efficiency IMD Up IMD Low ACPR 38 40 42 44 46 48 50 52 54 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz Efficiency Gain -50 -45 -40 -35 -30 -25 -20 -15 -10 1890 1920 1950 1980 2010 Frequency (MHz) Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency VDD = 30 V, IDQ = 1.85 A, POUT = 110 W Gain Efficiency RL IMD3 Gain (dB) / Efficiency (%) Return Loss (dB), IMD (dBc)
Data Sheet 4 of 15 Rev. 09.1, 2016-06-13 PTFB192503EL PTFB192503FL Typical Performance (cont.) -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 51 53 55 Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz Efficiency IMD 3 37 39 41 43 45 47 49 51 53 55 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz Efficiency Gain -60 -50 -40 -30 -20 35 40 45 50 55 IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 1.85 A, Tone Spacing = 1 MHz
1930 MHz
1960 MHz
-40 -35 -30 -25 -20 -15 22 24 26 28 30 32 34 3rd Order IMD (dBc) Supply Voltage (V) Two-tone Voltage Sweep IDQ = 1.85 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz Output Power = 53.3 dBm Efficiency Gain IMD3 Gain (dB) / Efficiency (%)
Data Sheet 5 of 15 Rev. 09.1, 2016-06-13 Typical Performance (cont.) 40 45 50 55 Drain Efficiency (%) Gain (dB) Output Power (dBm) CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz +85° C +25° C –10° CEfficiency Gain 40 45 50 55 Power Gain (dB) Output Power (dBm) CW Performance Gain vs. Output Power VDD = 30 V, ƒ = 1990 MHz IDQ = 1.85 A IDQ = 2.5 A IDQ = 1.2 A -70 -60 -50 -40 -30 -20 35 40 45 50 55 IMD (dBc) Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz IMD3 IMD7 IMD5
Data Sheet 6 of 15 Rev. 09.1, 2016-06-13 PTFB192503EL PTFB192503FL Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 1900 2.63 –3.92 1.36 –4.49 1930 2.56 –3.67 1.33 –4.35 1960 2.48 –3.44 1.31 –4.21 1990 2.42 –3.21 1.28 –4.07 2020 2.35 –2.98 1.26 –3.93 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.7 0.2 0.4 0.6 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.40 0.45 0.05 0.10 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 Nornalized to 50 Ohms b192503efl db192503efl Sept. 9, 2009 7:36:47 PM Z SourceZ Load
2020 MHz
1900 MHz
See next page for reference circuit information Z0 = 50 W Z Source Z Load G S D
Data Sheet 7 of 15 Rev. 09.1, 2016-06-13 Reference Circuit Reference circuit input schematic for ƒ = 1990 MHz PTFB192503EL/FL_INPUT In Out NC NC 2 3 4 56 7 C107 8.2 pF C102 8.2 pF C103 10000000 pF C104 10000000 pF TL135 TL136 C105 2200000 pF C106 2200000 pF R801
100 Ohm
10 Ohm
RF_IN S C B E 4 S1 C101 10 pF TL114 TL115 TL116 TL117 TL118 TL119 TL120 TL121 TL122 TL123 TL124 TL125 TL101 TL102TL103 TL104 TL105 TL106 TL133 TL134 R804
1300 Ohm
1200 Ohm
(Pin G) b 1 9 2 5 0 3 e f l _ b d i n _ 0 8 - 2 3 - 2 0 1 0 er = 3.48 H = 30 mil RO/RO4350B1
Data Sheet 8 of 15 Rev. 09.1, 2016-06-13 PTFB192503EL PTFB192503FL Reference Circuit (cont.) Reference circuit output schematic for ƒ = 1990 MHz See next page for more reference circuit information PTFB192503EL/FL_OUTPUT C201 100000 pF 1 2 TL201 TL202 TL203 TL204TL205 TL206 TL207 C202 10000000 pF TL208 C203 10000000 pF 3TL209 TL210 TL211 1 2 TL212 1 2 TL213 1 2 TL214 TL215 TL216 C204 10000000 pF TL217 TL218 C205 10000000 pF TL219 C206 100000 pF TL220 TL221 TL222 TL223 TL224 TL225TL226 TL227 TL228TL229 C207 10 pF C208 1000000 pF C209 1000000 pF C210 2200000 pF C211 2200000 pF TL230 C212 1.1 pF C213 1.1 pF TL231 TL232 TL233 TL234 TL235 TL236 RF_OUT b 1 9 2 5 0 3 e f l _ b d o u t _ 0 8 - 2 3 - 2 0 1 0 DUT (Pin V) DRAIN DUT (Pin D) DUT (Pin V) VDD VDD er = 3.48 H = 30 mil RO/RO4350B1
Data Sheet 9 of 15 Rev. 09.1, 2016-06-13 Reference Circuit (cont.)
Description
DUT PTFB192503EL or PTFB192503FL PCB 0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 1990 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101 0.037 λ, 51.58 W W = 1.651, L = 3.358 W = 65, L = 132 TL102 0.053 λ, 9.67 W W = 13.970, L = 4.470 W = 550, L = 176 TL103 0.033 λ, 51.58 W W = 1.651, L = 3.018 W = 65, L = 119 TL104 W1 = 13.970, W2 = 0.762, W3 = 13.970, W1 = 550, W2 = 30, W3 = 550, W4 = 0.762 W4 = 30 TL105, TL106 W = 0.762 W = 30 TL109 W1 = 1.651, W2 = 2.032 W1 = 65, W2 = 80 TL110, TL130 0.015 λ, 38.82 W W = 2.540, L = 1.321 W = 100, L = 52 TL111 0.071 λ, 92.53 W W = 0.508, L = 6.756 W = 20, L = 266 TL112 0.016 λ, 68.02 W W = 1.016, L = 1.524 W = 40, L = 60 TL113, TL133 0.024 λ, 78.27 W W = 0.762, L = 2.286 W = 30, L = 90 TL114, TL125 0.023 λ, 78.27 W W = 0.762, L = 2.159 W = 30, L = 85 TL115, TL116 0.001 λ, 68.02 W W = 1.016, L = 0.127 W = 40, L = 5 TL117, TL118 0.014 λ, 78.27 W W = 0.762, L = 1.270 W = 30, L = 50 TL119 0.024 λ, 9.67 W W = 13.970, L = 1.981 W = 550, L = 78 TL120, TL121 0.007 λ, 68.02 W W = 1.016, L = 0.686 W = 40, L = 27 TL122, TL123 0.125 λ, 78.27 W W = 0.762, L = 11.684 W = 30, L = 460 TL124 0.008 λ, 45.17 W W = 2.032, L = 0.762 W = 80, L = 30 TL129 0.077 λ, 9.67 W W = 13.970, L = 6.502 W = 550, L = 256 TL131 0.016 λ, 68.02 W W = 1.016, L = 1.524 W = 40, L = 60 table continued on page 10
Data Sheet 10 of 15 Rev. 09.1, 2016-06-13 PTFB192503EL PTFB192503FL Reference Circuit (cont.) Electrical Characteristics at 1990 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL204 0.012 λ, 51.58 W W = 1.651, L = 1.118 W = 65, L = 44 TL205 0.084 λ, 6.86 W W = 20.320, L = 6.985 W = 800, L = 275 TL206 0.029 λ, 23.60 W W = 4.928, L = 2.540 W = 194, L = 100 TL207 0.029 λ, 23.79 W W = 4.877, L = 2.540 W = 192, L = 100 TL210 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700 TL215, TL217 0.118 λ, 34.08 W W = 3.048, L = 10.516 W = 120, L = 414 TL216 0.019 λ, 34.08 W W = 3.048, L = 1.702 W = 120, L = 67 TL218 0.025 λ, 34.08 W W = 3.048, L = 2.210 W = 120, L = 87 TL222 0.007 λ, 51.58 W W = 1.651, L = 0.635 W = 65, L = 25 TL223 0.011 λ, 45.17 W W = 2.032, L = 1.016 W = 80, L = 40 TL224, TL225, TL226, TL228 W = 0.002, ANG = 90, R = 0.002 W = 2, ANG = 3543307, R = 70 TL227 0.014 λ, 51.58 W W = 1.651, L = 1.270 W = 65, L = 50 TL230 0.000 λ, 19.45 W W = 6.248, L = 0.025 W = 246, L = 1 TL231 0.000 λ, 8.37 W W = 16.383, L = 0.025 W = 645, L = 1 TL232, TL233 0.000 λ, 146.88 W W = 0.025, L = 0.025 W = 1, L = 1 TL234 W1 = 20.320, W2 = 0.025, W3 = 20.320, W1 = 800, W2 = 1, W3 = 800, W4 = 0.025 W4 = 1 TL235 0.005 λ, 6.86 W W = 20.320, L = 0.406 W = 800, L = 16 TL236 0.014 λ, 51.58 W W = 1.651, L = 1.270 W = 65, L = 50
Data Sheet 11 of 15 Rev. 09.1, 2016-06-13 Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB192503EF Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Reference circuit assembly diagram (not to scale) PTFB192503EL/FL_02 b 1 9 2 5 0 3 e f l _ C D _ 1 1 - 0 9 - 2 0 1 0 PTFB192503_OUT_02PTFB192503_IN_02 RO4350, .030 (60)RO4350, .030 (60) 10 µF 10 µF C102 R804 R803 R802 R805 R102 C801 C802C803 C101 C103 C104 C105 C106 C107 R101 R801 C201 C205 C202 C212 C213 C208 C209 C210 C211 C203 C206 C207 C204 VDD VDD VDD RF_IN RF_OUT
Data Sheet 12 of 15 Rev. 09.1, 2016-06-13 PTFB192503EL PTFB192503FL Reference Circuit (cont.) Component Description Suggested Manufacturer P/N Input C101 Chip capacitor, 10 pF ATC ATC100B100FW500XB C102, C107 Chip capacitor, 8.2 pF ATC ATC100A8R2BW150XB C103, C104 Capacitor, 10 µF Digi-Key 587-1818-2-ND C105, C106 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT -ND R101, R102, R802, R803 Resistor, 10 W Digi-Key P10ECT -ND R801 Resistor, 100 W Digi-Key P100ECT -ND R804 Resistor, 1300 W Digi-Key P1.3KGCT -ND R805 Resistor, 1200 W Digi-Key P1.2KGCT -ND S1 Transistor Digi-Key BCP5616TA-ND S2 Voltage Regulator Digi-Key LM78L05ACM-ND S3 Potentiometer, 2k W Digi-Key 3224W-202ECT -ND Output C201, C206 Chip capacitor, 0.1 µF Digi-Key 399-1267-2-ND C202, C203 Chip capacitor, 10 µF Digi-Key 587-1818-2-ND C204, C205 Capacitor, 10 µF Digi-Key 281M5002106K C207 Capacitor, 10 pF ATC ATC100B100FW500XB C208, C209 Chip capacitor, 1 µF Digi-Key 445-1411-2-ND C210, C211 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND C212, C213 Chip capacitor, 1.1 pF ATC ATC100A1R1BW150XB
Data Sheet 13 of 15 Rev. 09.1, 2016-06-13 Package Outline Specifications Package H-33288-6 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: G = gate, S = source, D = drain, V = VDD, E, F = N.C. 6. Gold plating thickness: 0.25 micron [10 microinch] max. 22.352±.200 [.880±.008] 34.036 [1.340] LC 1.016 [.040] 1.575 [.062] (SPH) 4.039+.254 -.127 [.159+.010 -.005 ] D G VV FE LC 19.558±.510 [.770±.020] 9.779 [.385]9.398 [.370]LC 2X 12.700 [.500] 4X 30° 2X 22.860 [.900] 27.940 [1.100] 2X R1.626 [R.064] 45° X 2.032 [45° X .080] 4.889±.510 [.192±.020] 4X 1.143 [.045] (4 PLS) 2X 5.080 [.200] (2 PLS) 4X R1.524 [R.060] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD; E, F – N.C. 6. Gold plating thickness: 0.25 micron [10 microinch] max.
Data Sheet 14 of 15 Rev. 09.1, 2016-06-13 PTFB192503EL PTFB192503FL Package Outline Specifications (cont.) Package H-34288-4/2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD 6. Gold plating thickness: 0.25 micron [10 microinch] max. 23.114 [.910] 1.016 [.040] 1.575 [.062] (SPH) 22.352±.200 [.880±.008] 4.039+.254 -.127 [.159+.010 -.005 ] S LC LC D G CL 19.558±.510 [.770±.020] 2X 12.700 [.500] 45° X 2.032 [45° X .080] 2X 1.143 [.045] 9.398 [.370] 9.779 [.385] 22.860 [.900] 2X 5.080 [.200] 4.889±.510 [.192±.020] V V 2X 30° 4X R0.508+.381 -.127 [R.020+.015 -.005 ]
Data Sheet 15 of 15 Rev. 09.1, 2016-06-13 Edition 2016-06-13 Published by Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFB192503EL V1/ PTFB192503FL V2 Revision History: 2016-06-13 Data Sheet Previous Version: 2010-11-09, Data Sheet Page Subjects (major changes since last revision)