PTFB192503FL

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Document overview

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• PDF pages: 14

Technical content

Features

• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance, 30 V,

1990 MHz

• Average output power = 50 W - Linear gain = 19 dB - Drain efficiency = 28 % - Intermodulation distortion = –35 dBc
• Typical CW performance, 1990 MHz, 30 V - Output power at P 1dB = 240 W - Efficiency = 55%
• Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
• Integrated ESD protection. Human Body Model, Class 2 (minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power
• Pb-free, RoHS-compliant PTFB192503FL Package H-34288-4/2 33 35 37 39 41 43 45 47 49 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing BW 3.84MHz Efficiency Gain

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 RF Characteristics (cont.) Two-tone Measurements (tested in Wolfspeed test fixture) VDD = 30 V, IDQ = 1.9 A, POUT = 220 W PEP , ƒ = 1990 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency hD 40 41.5 — % Intermodulation Distortion IMD — –29 –27 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V R DS(on) — 0.03 — W Operating Gate Voltage VDS = 30 V, IDQ = 1.9 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) RqJC 0.262 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTFB192503FL V2 R0 PTFB192503FL-V2-R0 H-34288-4/2, earless Tape & Reel, 50pcs PTFB192503FL V2 R250 PTFB192503FL-V2-R250 H-34288-4/2, earless Tape & Reel, 250pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 010, 2018-06-01 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 Typical Performance (data taken in a production test fixture) -60 -55 -50 -45 -40 -35 -30 -25 33 35 37 39 41 43 45 47 49 IMD (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.85 A, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing BW 3.84 MHz

1990 Lower

1990 Upper

1960 Lower

1960 Upper

1930 Lower

1930 Upper

-60 -55 -50 -45 -40 -35 -30 -25 -20 33 35 37 39 41 43 45 47 49 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz Efficiency IMD Up IMD Low ACPR 38 40 42 44 46 48 50 52 54 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz Efficiency Gain -50 -45 -40 -35 -30 -25 -20 -15 -10 1890 1920 1950 1980 2010 Frequency (MHz) Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency VDD = 30 V, IDQ = 1.85 A, POUT = 110 W Gain Efficiency RL IMD3 Gain (dB) / Efficiency (%) Return Loss (dB), IMD (dBc)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 4PTFB192503FL Typical Performance (cont.) -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 51 53 55 Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz Efficiency IMD 3 37 39 41 43 45 47 49 51 53 55 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz Efficiency Gain -60 -50 -40 -30 -20 35 40 45 50 55 IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 1.85 A, Tone Spacing = 1 MHz

1930 MHz

1960 MHz

-40 -35 -30 -25 -20 -15 22 24 26 28 30 32 34 3rd Order IMD (dBc) Supply Voltage (V) Two-tone Voltage Sweep IDQ = 1.85 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz Output Power = 53.3 dBm Efficiency Gain IMD3 Gain (dB) / Efficiency (%)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 010, 2018-06-01 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 Typical Performance (cont.) 40 45 50 55 Drain Efficiency (%) Gain (dB) Output Power (dBm) CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz +85° C +25° C –10° CEfficiency Gain 40 45 50 55 Power Gain (dB) Output Power (dBm) CW Performance Gain vs. Output Power VDD = 30 V, ƒ = 1990 MHz IDQ = 1.85 A IDQ = 2.5 A IDQ = 1.2 A -70 -60 -50 -40 -30 -20 35 40 45 50 55 IMD (dBc) Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz IMD3 IMD7 IMD5

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 6PTFB192503FL Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 1900 2.63 –3.92 1.36 –4.49 1930 2.56 –3.67 1.33 –4.35 1960 2.48 –3.44 1.31 –4.21 1990 2.42 –3.21 1.28 –4.07 2020 2.35 –2.98 1.26 –3.93 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.7 0.2 0.4 0.6 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.40 0.45 0.05 0.10 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 Nornalized to 50 Ohms b192503efl db192503efl Sept. 9, 2009 7:36:47 PM Z SourceZ Load

2020 MHz

1900 MHz

See next page for reference circuit information Z0 = 50 W Z Source Z Load G S D

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 Reference Circuit Reference circuit input schematic for ƒ = 1990 MHz PTFB192503EL/FL_INPUT In Out NC NC 2 3 4 56 7 C107 8.2 pF C102 8.2 pF C103 10000000 pF C104 10000000 pF TL135 TL136 C105 2200000 pF C106 2200000 pF R801

100 Ohm

10 Ohm

RF_IN S C B E 4 S1 C101 10 pF TL114 TL115 TL116 TL117 TL118 TL119 TL120 TL121 TL122 TL123 TL124 TL125 TL101 TL102TL103 TL104 TL105 TL106 TL133 TL134 R804

1300 Ohm

1200 Ohm

(Pin G) b 1 9 2 5 0 3 e f l _ b d i n _ 0 8 - 2 3 - 2 0 1 0 er = 3.48 H = 30 mil RO/RO4350B1

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 Reference Circuit (cont.) Reference circuit output schematic for ƒ = 1990 MHz See next page for more reference circuit information PTFB192503EL/FL_OUTPUT C201 100000 pF 1 2 TL201 TL202 TL203 TL204TL205 TL206 TL207 C202 10000000 pF TL208 C203 10000000 pF 3TL209 TL210 TL211 1 2 TL212 1 2 TL213 1 2 TL214 TL215 TL216 C204 10000000 pF TL217 TL218 C205 10000000 pF TL219 C206 100000 pF TL220 TL221 TL222 TL223 TL224 TL225TL226 TL227 TL228TL229 C207 10 pF C208 1000000 pF C209 1000000 pF C210 2200000 pF C211 2200000 pF TL230 C212 1.1 pF C213 1.1 pF TL231 TL232 TL233 TL234 TL235 TL236 RF_OUT b 1 9 2 5 0 3 e f l _ b d o u t _ 0 8 - 2 3 - 2 0 1 0 DUT (Pin V) DRAIN DUT (Pin D) DUT (Pin V) VDD VDD er = 3.48 H = 30 mil RO/RO4350B1

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 Reference Circuit (cont.)

Description

PCB 0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 1990 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101 0.037 λ, 51.58 W W = 1.651, L = 3.358 W = 65, L = 132 TL102 0.053 λ, 9.67 W W = 13.970, L = 4.470 W = 550, L = 176 TL103 0.033 λ, 51.58 W W = 1.651, L = 3.018 W = 65, L = 119 TL104 W1 = 13.970, W2 = 0.762, W3 = 13.970, W1 = 550, W2 = 30, W3 = 550, W4 = 0.762 W4 = 30 TL105, TL106 W = 0.762 W = 30 TL109 W1 = 1.651, W2 = 2.032 W1 = 65, W2 = 80 TL110, TL130 0.015 λ, 38.82 W W = 2.540, L = 1.321 W = 100, L = 52 TL111 0.071 λ, 92.53 W W = 0.508, L = 6.756 W = 20, L = 266 TL112 0.016 λ, 68.02 W W = 1.016, L = 1.524 W = 40, L = 60 TL113, TL133 0.024 λ, 78.27 W W = 0.762, L = 2.286 W = 30, L = 90 TL114, TL125 0.023 λ, 78.27 W W = 0.762, L = 2.159 W = 30, L = 85 TL115, TL116 0.001 λ, 68.02 W W = 1.016, L = 0.127 W = 40, L = 5 TL117, TL118 0.014 λ, 78.27 W W = 0.762, L = 1.270 W = 30, L = 50 TL119 0.024 λ, 9.67 W W = 13.970, L = 1.981 W = 550, L = 78 TL120, TL121 0.007 λ, 68.02 W W = 1.016, L = 0.686 W = 40, L = 27 TL122, TL123 0.125 λ, 78.27 W W = 0.762, L = 11.684 W = 30, L = 460 TL124 0.008 λ, 45.17 W W = 2.032, L = 0.762 W = 80, L = 30 TL129 0.077 λ, 9.67 W W = 13.970, L = 6.502 W = 550, L = 256 TL131 0.016 λ, 68.02 W W = 1.016, L = 1.524 W = 40, L = 60 table continued on page 10

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 Reference Circuit (cont.) Electrical Characteristics at 1990 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL204 0.012 λ, 51.58 W W = 1.651, L = 1.118 W = 65, L = 44 TL205 0.084 λ, 6.86 W W = 20.320, L = 6.985 W = 800, L = 275 TL206 0.029 λ, 23.60 W W = 4.928, L = 2.540 W = 194, L = 100 TL207 0.029 λ, 23.79 W W = 4.877, L = 2.540 W = 192, L = 100 TL210 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700 TL215, TL217 0.118 λ, 34.08 W W = 3.048, L = 10.516 W = 120, L = 414 TL216 0.019 λ, 34.08 W W = 3.048, L = 1.702 W = 120, L = 67 TL218 0.025 λ, 34.08 W W = 3.048, L = 2.210 W = 120, L = 87 TL222 0.007 λ, 51.58 W W = 1.651, L = 0.635 W = 65, L = 25 TL223 0.011 λ, 45.17 W W = 2.032, L = 1.016 W = 80, L = 40 TL224, TL225, TL226, TL228 W = 0.002, ANG = 90, R = 0.002 W = 2, ANG = 3543307, R = 70 TL227 0.014 λ, 51.58 W W = 1.651, L = 1.270 W = 65, L = 50 TL230 0.000 λ, 19.45 W W = 6.248, L = 0.025 W = 246, L = 1 TL231 0.000 λ, 8.37 W W = 16.383, L = 0.025 W = 645, L = 1 TL232, TL233 0.000 λ, 146.88 W W = 0.025, L = 0.025 W = 1, L = 1 TL234 W1 = 20.320, W2 = 0.025, W3 = 20.320, W1 = 800, W2 = 1, W3 = 800, W4 = 0.025 W4 = 1 TL235 0.005 λ, 6.86 W W = 20.320, L = 0.406 W = 800, L = 16 TL236 0.014 λ, 51.58 W W = 1.651, L = 1.270 W = 65, L = 50

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB192503EF Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Reference circuit assembly diagram (not to scale) R802 R803 R804 C803 R801 R805 C802 C801 C104 C102 C106 C107 C101 C103 R101 C105 R102 C209 C205 C206 C208 C211 C202C210 C204 C201 C203 C207 C213 C212 b19 25 03 ef l _ C D_06 - 13 - 20 18 PTFB192503_IN_02A RO4350, .030 (60)RO4350, .030 (60) 10 µF 10 µF C102 R804 R803 R802 R805 R102 C801 C802C803 C101 C103 C104 C105 C106 C107 R101 R801 C205 C202 C212 C213 C208C210 C206 C207 C204 VDD VDD RF_IN RF_OUT PTFB192503_OUT_02A VDD C201 C209C211 C203

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 Reference Circuit (cont.) Component Description Suggested Manufacturer P/N Input C101 Chip capacitor, 10 pF ATC ATC100B100FW500XB C102, C107 Chip capacitor, 8.2 pF ATC ATC100A8R2BW150XB C103, C104 Capacitor, 10 µF Digi-Key 587-1818-2-ND C105, C106 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT -ND R101, R102, R802, R803 Resistor, 10 W Digi-Key P10ECT -ND R801 Resistor, 100 W Digi-Key P100ECT -ND R804 Resistor, 1300 W Digi-Key P1.3KGCT -ND R805 Resistor, 1200 W Digi-Key P1.2KGCT -ND S1 Transistor Digi-Key BCP5616TA-ND S2 Voltage Regulator Digi-Key LM78L05ACM-ND S3 Potentiometer, 2k W Digi-Key 3224W-202ECT -ND Output C201, C206 Chip capacitor, 0.1 µF Digi-Key 399-1267-2-ND C202, C203 Chip capacitor, 10 µF Digi-Key 587-1818-2-ND C204, C205 Capacitor, 10 µF Digi-Key 281M5002106K C207 Capacitor, 10 pF ATC ATC100B100FW500XB C208, C209 Chip capacitor, 1 µF Digi-Key 445-1411-2-ND C210, C211 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND C212, C213 Chip capacitor, 1.1 pF ATC ATC100A1R1BW150XB

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12 Package Outline Specifications (cont.) Package H-34288-4/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD 6. Gold plating thickness: 0.25 micron [10 microinch] max. 23.114 [.910] 1.016 [.040] 1.575 [.062] (SPH) 22.352±.200 [.880±.008] 4.039+.254 -.127 [.159+.010 -.005 ] S LC LC D G CL 19.558±.510 [.770±.020] 2X 12.700 [.500] 45° X 2.032 [45° X .080] 2X 1.143 [.045] 9.398 [.370] 9.779 [.385] 22.860 [.900] 2X 5.080 [.200] 4.889±.510 [.192±.020] V V 2X 30° 4X R0.508+.381 -.127 [R.020+.015 -.005 ]

Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTFB192503FL

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 09.1 2016-06-13 Data Sheet 2 Updated ordering code to R0 10 06-12-2018 Production All Converted to Wolfspeed Data Sheet, Removed EL version Rev. 10, 2018-06-12 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com