PTFB183404E

Cree, Inc

High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

Manufacturer: Cree, Inc

Document: 18 Pages / 649Kb

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Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 18

Technical content

Features

Broadband internal input and output matching
Wide video bandwidth
T ypical single-carrier WCDMA perfor mance,

1880 MHz, 30 V

Output pow er = 125 W - Efficiency = 31% - Gain = 17 dB - PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz = –37 dBc
Increased negative gate-source voltage range for improved perf ormance in Doherty amplifiers
Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power Integrated ESD protection
Excellent thermal stability
Pb-free and RoHS compliant PTFB183404F Pac kage H-37275-6/2

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 2PTFB183404E/F RF Characteristics (cont.) Single-carrier WCDMA Performance (not subject to production test – verified by design / characterization in Wolfspeed test fixture) VDD = 30 V, IDQ = 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability Characteristic Conditions Symbol 1805 MHz 1842 MHz 1880 MHz (Typ) (Typ) (Typ) Gain POUT (AVG) = 49 dBm Gps 17.1 17.3 17.5 POUT (AVG) = 51 dBm 17.0 17.15 17.4 Drain Efficiency POUT (AVG) = 49 dBm hD 25 24.5 24 POUT (AVG) = 51 dBm 31 30 30 Output PAR at 0.01% POUT (AVG) = 49 dBm dB 6.5 6.5 6.5 POUT (AVG) = 51 dBm 5.5 5.5 5.5 Adjacent Channel Po wer Ratio POUT (AVG) = 49 dBm ACPR –43 –42.5 –41 POUT (AVG) = 51 dBm –36 –35 –34 Two-tone Specifications (not subject to production test – verified by design / characterization in Wolfspeed test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 310 W PEP , ƒ = 1880 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 17.5 — dB Drain Efficiency hD — 35 — % Intermodulation Distor tion IMD — 30 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Oper ating Gate Voltage VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 3PTFB183404E/F -55 -50 -45 -40 -35 -30 -25 36 38 40 42 44 46 48 50 52 IMD (dBc) Average Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz

1880 Lower

1880 Upper

1842.5 Lower

1842.5 Upper

1805 Lower

1805 Upper

36 38 40 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Average Output Power (dBm) Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 2.6 A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84MHz Efficiency Gain Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source V oltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 340 W CW) RqJC 0.2 °C/W

Ordering Information

Type and Version Order Code Pac kage Description Shipping PTFB183404E V1 R0 PTFB183404E-V1-R0 Slotted push-pull Tape & Reel, 50pcs PTFB183404E V1 R250 PTFB183404E-V1-R250 Slotted push-pull Tape & Reel, 250pcs PTFB183404F V2 R0 PTFB183404F-V2-R0 Earless push-pull Tape & Reel, 50pcs PTFB183404F V2 R250 PTFB183404F-V2-R250 Earless push-pull Tape & Reel, 250pcs Typical Performance (data taken in a production test fixture)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 4PTFB183404E/F -50 -40 -30 -20 -10 1730 1767.5 1805 1842.5 1880 1917.5 1955 Frequency (MHz) Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency VDD = 30 V, IDQ = 2.6 A, POUT = 170 W Gain Efficiency RL IMD3 Return Loss (dB), IMD (dBc) Gain (dB) / Efficiency (%) -65 -60 -55 -50 -45 -40 -35 -30 -25 39 41 43 45 47 49 51 53 55 Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ1 = 1880 MHz, ƒ 2 = 1879 MHz Efficiency IMD3 40 42 44 46 48 50 52 54 56 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ1 = 1880 MHz, ƒ 2 = 1879 MHz Efficiency Gain 39 41 43 45 47 49 51 53 55 57 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up (over temp) (POUT -max 3rd order IMD @ -30dBc) VDD = 30 V, IDQ = 2.6 A, ƒ1 = 1842.5 MHz, ƒ 2 = 1841.5 MHz +85°C +25°C -30°C Efficiency Gain Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 5PTFB183404E/F -60 -50 -40 -30 -20 39 41 43 45 47 49 51 53 55 57 IMD 3rd Order (dBc) Output Power, PEP (dBm) Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz 1880MHz 1842.5MHz 1805MHz -70 -60 -50 -40 -30 -20 39 41 43 45 47 49 51 53 55 57 IMD (dBc) Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 2.6 A, ƒ1 = 1880 MHz, ƒ 2 = 1879 MHz 3rd Order 7th 5th -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 1 10 100 IMD (dBc) Two Tone Spacing (MHz) Intermodulation Distortion vs. Tone Spacing ƒ = 1842.5 MHz, P OUT = 330 W (PEP), VDD = 30 V, IDQ = 2.6 A IMD7 IMD5 IMD3 IMD Lower IMD Upper -60 -55 -50 -45 -40 -35 -30 -25 36 38 40 42 44 46 48 50 52 54 Drain Efficiency (%) ACP (dBc) Average Output Power (dBm) Single-carrier Drive-up, 1880 MHz VDD = 30 V, IDQ = 2.6 A, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz ACP Up Efficiency ACP Low Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 6PTFB183404E/F -60 -40 -20 36 38 40 42 44 46 48 50 52 54 Efficiency (%) / ACP (dBc) Average Output Power (dBm) Single-carrier Drive-up, 1880 MHz VDD = 30 V, IDQ = 2.6 A, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz ACP PARC @ .01% CCDF Efficiency Gain PARC & PARC Gain (dB) -40 -35 -30 -25 -20 -15 -10 1693 1768 1843 1918 1993 Frequency (MHz) Single-carrier Broadband Performance VDD = 30 V, IDQ = 2.6 A, POUT = 125 W Gain Efficiency RL ACP PARC Gain & PARC (dB) / Efficiency (%) Return Loss (dB) / ACP (dBc) -60 -40 -20 36 38 40 42 44 46 48 50 52 54 Efficiency (%) / ACP(dBc) Average Output Power (dBm) Single-carrier Drive-up, 1842 MHz VDD = 30 V, IDQ = 2.6 A, ƒ = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz ACP PARC @ .01% CCDF Efficiency Gain PARC & PARC Gain (dB) -60 -40 -20 36 38 40 42 44 46 48 50 52 54 Efficiency (%) / ACP(dBc) Average Output Power (dBm) Single-carrier Drive-up, 1805 MHz VDD = 30 V, IDQ = 2.6 A, ƒ = 1805 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz ACP PARC @ .01% CCDF Efficiency Gain PARC & PARC Gain (dB) Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 7PTFB183404E/F 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-01 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.7 0.2 0.4 0.6 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.350.40 0.45 0.05 0.10 0.15 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 Nornalized to 50 Ohms ptfb183404f-v1 db183404f-v1 Aug. 27, 2010 12:45:00 PM Freq Z Source R jX R 1730.0 1.86 -4.2 1767.5 1.77 -4.0 1805.0 1.68 -3.8 1842.5 1.61 -3.7 1880.0 1.56 -3.5 1917.5 1.51 -3.3 1955.0 1.47 -3.2 Z Source

1955 MHz

1730 MHz

Z0 = 50 W Z Source Z Load G D G S D Broadband Circuit Impedance (combined leads) Frequency Z Source W Z Load W MHz R jX R jX 1730 1.86 –4.25 0.55 –2.78 1768 1.77 –4.06 0.54 –2.66 1805 1.68 –3.88 0.53 –7.54 1843 1.61 –3.70 0.52 –2.43 1880 1.56 –3.53 0.51 –2.32 1918 1.51 –3.37 0.51 –2.21 1955 1.47 –3.22 0.5 –2.11 See next page for reference circuit information

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 8PTFB183404E/F C802 1000 pF C803 1000 pF C101 4700000 pF C102 100000 pF TL104 TL105 TL106 TL107TL108 TL109 TL110TL111 TL112 TL113TL114 TL115 TL116 TL117 TL118 TL119 TL120 C801 1000 pF TL123 TL124 TL125 TL126 TL127 TL128 TL129 TL130 TL131 TL132 TL133 TL134 TL135 TL136 TL137 TL138 TL139 TL140 TL141 TL101 TL102 TL103 3TL143 TL144 1 2 TL145 TL146 TL147 TL148TL149 TL150 TL151 TL152 TL153 TL154 TL155 TL156 TL157 TL158 TL159 TL121 TL122 R101

10 Ohm

10 OhmR802

1200 Ohm

1300 Ohm

S C B E C103 0.7 pF TL169TL170 1 2 TL171 TL172 C106 1.7 pF C107 1.7 pFC108 10 pF C109 10 pF R805 bb b b b b bbb b b bbbb bbb bbb b b b VDD Reference Circuit Reference circuit input schematic for ƒ = 1880 MHz er = 3.48 H = 20 mil RO/RO4350

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 9PTFB183404E/F Reference Circuit (cont.) Reference circuit output schematic for ƒ = 1880 MHz TL211 TL212 TL213 TL214 TL215TL216 TL217 TL218 TL223 TL224 TL225TL226 TL227TL228 TL229 TL230 TL231 TL232 TL233 VDD C204 10000000 pF C203 10000000 pF TL206TL207 TL208 TL209 TL210 TL236 C207 1000000 pF 1 2 TL237 C208 0.4 pF C209 1.8 pF C210 1.3 pF C211 1.3 pF C212 1.3 pF C213 1.3 pF TL238 TL239 TL240 TL219 TL220 1 2 TL221 TL222 C215 1000000 pF C214 1000000 pF C216 10 pFTL201TL202 C201 1.4 pF C202 10000000 pF TL203 3TL204 TL205 TL234 C205 2200000 pF C206 2200000 pF 3TL235 b b b b b b bbb b b b b bbb bbb bbb b b b RF OUT VDD DRAIN DUT VDD VDD er = 3.48 H = 20 mil RO/RO4350

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 10PTFB183404E/F Reference Circuit (cont.)

Description

PCB 0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 1880 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101, TL129 0.017 λ , 54.17 W W = 1.016, L = 1.651 W = 40, L = 65 TL102 0.002 λ , 63.89 W W = 0.762, L = 0.203 W = 30, L = 8 TL103, TL139 0.000 λ , 41.75 W W = 1.524, L = 0.025 W = 60, L = 1 TL104 0.208 λ , 63.89 W W = 0.762, L = 20.297 W = 30, L = 799 TL105 0.008 λ , 28.85 W W = 2.540, L = 0.762 W = 100, L = 30 TL106 0.005 λ , 63.89 W W = 0.762, L = 0.508 W = 30, L = 20 TL107, TL157 0.061 λ , 8.03 W W = 11.430, L = 5.359 W = 450, L = 211 TL108, TL172 0.004 λ , 8.03 W W = 11.430, L = 0.338 W = 450, L = 13 TL109, TL170 0.002 λ , 8.03 W W = 11.430, L = 0.196 W = 450, L = 8 TL110 0.022 λ , 32.60 W W = 2.159, L = 2.032 W = 85, L = 80 TL111 0.028 λ , 49.69 W W = 1.168, L = 2.710 W = 46, L = 107 TL112 0.000 λ , 63.89 W W = 0.762, L = 0.025 W = 30, L = 1 TL113 0.016 λ , 49.69 W W = 1.168, L = 1.549 W = 46, L = 61 TL114 0.029 λ , 49.69 W W = 1.168, L = 2.743 W = 46, L = 108 TL115, TL116, TL117, TL118 W = 2.540 W = 100 TL119, TL120 W = 1.016 W = 40 TL121, TL141 0.013 λ , 34.08 W W = 2.032, L = 1.270 W = 80, L = 50 TL122, TL123 0.000 λ , 63.89 W W = 0.762, L = 0.000 W = 30, L = 0 TL124, TL156 0.014 λ , 17.20 W W = 4.826, L = 1.270 W = 190, L = 50 TL125 0.013 λ , 63.89 W W = 0.762, L = 1.270 W = 30, L = 50 TL126, TL139, TL159 0.000 λ , 41.75 W W = 1.524, L = 0.025 W = 60, L = 1 TL127 0.002 λ , 63.89 W W = 0.762, L = 0.203 W = 30, L = 8 TL128, TL130 0.013 λ , 54.17 W W = 1.016, L = 1.262 W = 40, L = 50 TL131, TL138 0.014 λ , 54.17 W W = 1.016, L = 1.397 W = 40, L = 55 TL132, TL137 0.000 λ , 34.08 W W = 2.032, L = 0.025 W = 80, L = 1 TL133, TL136 0.079 λ , 54.17 W W = 1.016, L = 7.620 W = 40, L = 300 TL134, TL135 0.008 λ , 54.17 W W = 1.016, L = 0.762 W = 40, L = 30 TL140 0.015 λ , 63.89 W W = 0.762, L = 1.422 W = 30, L = 56 TL142, TL144 0.010 λ , 63.89 W W1 = 0.762, W2 = 0.762, W3 = 1.016 W1 = 30, W2 = 30, W3 = 40 TL143, TL168 0.016 λ , 63.89 W W1 = 0.762, W2 = 0.762, W3 = 1.524 W1 = 30, W2 = 30, W3 = 60 TL145 0.008 λ , 49.69 W W1 = 1.168, W2 = 1.168, W3 = 0.762 W1 = 46, W2 = 46, W3 = 30 TL146 W1 = 0.003, W2 = 0.005, Offset = 0.000 W1 = 3, W2 = 190, Offset = 10 TL147 W1 = 0.005, W2 = 0.011, Offset = 0.003 W1 = 5, W2 = 450, Offset = 130 table continued on page 11

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 11PTFB183404E/F Reference Circuit (cont.) Electrical Characteristics at 1880 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL148 W1 = 0.005, W2 = 0.011, Offset = –0.003 W1 = 5, W2 = 450, Offset = –130 TL149 W1 = 0.003, W2 = 0.005, Offset = 0.000 W1 = 3, W2 = 190, Offset = –10 TL150 W1 = 2.032, W2 = 0.762 W1 = 80, W2 = 30 TL151 W1 = 2.540, W2 = 0.762 W1 = 100, W2 = 30 TL152 W1 = 1.168, W2 = 2.159 W1 = 46, W2 = 85 TL153 0.008 λ , 28.85 W W = 2.540, L = 0.762 W = 100, L = 30 TL154, TL155 0.006 λ , 17.20 W W = 4.826, L = 0.508 W = 190, L = 20 TL158 0.015 λ , 63.89 W W = 0.762, L = 1.422 W = 30, L = 56 TL160 0.004 λ , 63.89 W W = 0.762, L = 0.404 W = 30, L = 16 TL161 0.023 λ , 28.85 W W1 = 2.540, W2 = 2.540, W3 = 2.159 W1 = 100, W2 = 100, W3 = 85 TL162, TL165 0.011 λ , 8.03 W W1 = 11.430, W2 = 11.430, W3 = 1.016 W1 = 450, W2 = 450, W3 = 40 TL163, TL164 0.016 λ , 63.89 W W1 = 0.762, W2 = 0.762, W3 = 1.524 W1 = 30, W2 = 30, W3 = 60 TL166, TL167 0.021 λ , 54.17 W W1 = 1.016, W2 = 1.016, W3 = 2.032 W1 = 40, W2 = 40, W3 = 80 TL169, TL171 0.009 λ , 8.03 W W1 = 11.430, W2 = 11.430, W3 = 0.762 W1 = 450, W2 = 450, W3 = 30 See next page for more reference circuit information

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 12PTFB183404E/F Reference Circuit (cont.) Electrical Characteristics at 1880 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL201 (taper) 0.011 λ, TL202 (taper) 0.009 λ, TL203 0.019 λ, 20.93 W W = 3.810, L = 1.778 W = 150, L = 70 TL204 0.019 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 1.778 W1 = 150, W2 = 150, W3 = 70 TL205, TL230 0.003 λ, 20.93 W W = 3.810, L = 0.254 W = 150, L = 10 TL206 (taper) 0.023 λ, TL207 W1 = 25.400, W2 = 26.365 W1 = 1000, W2 = 1038 TL208, TL209 0.000 λ, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1 TL210 0.055 λ, 3.67 W W = 26.365, L = 4.801 W = 1038, L = 189 TL211 0.044 λ, 34.72 W W = 1.981, L = 4.115 W = 78, L = 162 TL212 0.005 λ, 47.12 W W = 1.270, L = 0.432 W = 50, L = 17 TL213, TL214, TL239, TL240 0.000 λ, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1 TL215 0.066 λ, 47.12 W W = 1.270, L = 6.299 W = 50, L = 248 TL216 0.014 λ, 28.85 W W = 2.540, L = 1.270 W = 100, L = 50 TL217 W1 = 16.002, W2 = 0.025, W3 = 16.002 W1 = 630, W2 = 1, W3 = 630, W4 = 0.025 W4 = 1 TL218 W1 = 11.557, W2 = 0.025, W3 = 11.557 W1 = 455, W2 = 1, W3 = 455, W4 = 0.025 W4 = 1 TL219 W1 = 7.112, W2 = 0.025, W3 = 7.112 W1 = 280, W2 = 1, W3 = 280 W4 = 0.025 W4 = 1 TL220, TL221, TL223, TL224 0.042 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 3.810 W1 = 150, W2 = 150, W3 = 150 TL222 0.019 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 1.778 W1 = 150, W2 = 150, W3 = 70 TL225, TL227 0.023 λ, 20.93 W W = 3.810, L = 2.078 W = 150, L = 82 TL226, TL228 0.066 λ, 20.93 W W = 3.810, L = 6.020 W = 150, L = 237 TL229, TL232 0.028 λ, 20.93 W W = 3.810, L = 2.540 W = 150, L = 100 TL231, TL233 0.097 λ, 20.93 W W = 3.810, L = 8.915 W = 150, L = 351 TL234, TL235 0.019 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 1.778 W1 = 150, W2 = 150, W3 = 70, TL236 0.019 λ, 20.93 W W = 3.810, L = 1.778 W = 150, L = 70 TL237 0.021 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 2.032 W1 = 50, W2 = 50, W3 = 80 TL238 (taper) 0.009 λ,

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 13PTFB183404E/F Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB183404EF Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF RO4350, .020 (60/RNK47) b 1 8 3 4 0 4 f _ C D _ 0 7 - 2 8 - 2 0 1 0 PTFB183404_OUT_02 10 µF C201 C206 C204 C205 C202 C212 C213 C214 C207 C208 C209 C210 C211 C203 C216 C215 RO4350, .020 (60/RNK47) PTFB183404_IN_02 + C101 C102 C112 C111 C103 C104 C105 C106 C109 C110 R804 R104 R103 R803 R802 R801 R805 R102 R101 C107 C108 C801 C802 C803 RF_IN RF_OUT VDD VDD VDD 10 µF Reference circuit assembly diagram (not to scale)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 14PTFB183404E/F Reference Circuit (cont.) Component Description Sugg ested Manufacturer P/N Input C101, C110 Chip capacitor, 4.7 µF Digi-Ke y PCS3475CT -ND C102, C105 Chip capacitor, 0.1 µF Digi-Ke y PCC104BCT -ND C103 Chip capacitor, 0.7 pF ATC ATC100B0R7BW500XB C104, C108, C109 Chip capacitor, 10 pF ATC ATC100B100JW500XB C106, C107 Chip capacitor, 1.7 pF ATC ATC100A1R7BW150XB C111, C112 Chip capacitor, 10 pF ATC ATC100A100JW500XB C801, C802, C803 Chip capacitor, 1000 pF Digi-Ke y PCC1772CT -ND R101, R102, R801, R804, Resistor, 10 W Digi-Ke y P10ECT -ND R805 R103, R104 Resistor, 10 W Digi-Ke y P10GCT -ND R802 Resistor, 1200 W Digi-Ke y P1.2KGCT -ND R803 Resistor, 1300 W Digi-Ke y P1.3KGCT -ND S1 Potentiometer , 2k W Digi-Ke y 3224W-202ECT -ND S2 Tr ansistor Digi-Ke y BCP5616TA-ND S3 Voltage Regulator Digi-Ke y LM7805 Output C201 Chip capacitor, 1.4 pF ATC ATC100B1R4BW500XB C202, C207 Chip capacitor, 10 µF Digi-Ke y 587-1818-2-ND C203, C204 Tantalum capacitor , 10 µF Digi-Ke y TPSE106K050R0400 C205, C206 Chip capacitor, 2.2 µF Digi-Ke y 445-1447-2-ND C208 Chip capacitor, 0.4 pF ATC ATC100B0R4BW500XB C209 Chip capacitor, 1.8 pF ATC ATC100B1R8BW500XB C210, C211, C212, C213 Chip capacitor, 1.3 pF ATC ATC100B1R3BW500XB C214, C215 Chip capacitor, 1 µF Digi-Ke y 445-1411-2-ND C216 Chip capacitor, 10 pF ATC ATC100B100JW500XB

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 15PTFB183404E/F Pinout Diagram PTFB183404E PTFB183404F Data Sheet 15 of 18 Rev. 04.1, 2016-06-10 Pin Description V1 V DD Device 1 V2 V DD Device 2 G1 Gate Device 1 G2 Gate Device 2 D1 Drain Device 1 D2 Drain Device 2 E N.C. F N.C. S Source (flange) Pinout Diagram

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 16PTFB183404E/F Package Outline Specifications Package H-36275-8 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and toler ances per ASME Y14.5M-1994. 2. Primar y dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise 4. Pins: G1, G2 = gate; D1, D2 = drain; V1, V2 = VDD; E, F = N.C.; S = source 5. Lead thickness: 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Data Sheet 16 of 18 Rev. 04.1, 2016-06-10 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36275-8 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: G1, G2 = gate; D1, D2 = drain; V1, V2 = V DD; E, F = N.C.; S = source 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. 35.560 [1.400] 4X 11.684 [.460] 2X 45° X 1.19 [45° X .047] 9.398 [.370] CL CLLC 4X 30° 2X R1.587 [R.062] 4X 1.143 [.045] 2x 2.032 [.080] REF 4X 3.175 [.125]13.716 [.540] 9.144 [.360] 16.612±.500 [.654±.020] 10.160 [.400] 2X 31.750 [1.250] 1.626 [.064] 2.134 [.084] SPH 3.226±0.508 [.127±.020] 4.585+0.254 –.127 [.180 ]+.010 –.005 31.242±0.280 [1.230±.011] R0.508 +0.127 –0.508 [R.020 ]+.005 –.020 S LC CL G2E D1 D2 F 41.148 [1.620] H - 36275 - 8_po _ 2- 18 - 2010 V1 V2

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-06-25 17PTFB183404E/F Package Outline Specifications (cont.) Package H-37275-6/2 Diagram Notes—unless otherwise specified: 1. Inter pret dimensions and tolerances per ASME Y14.5M-1994. 2. Pr imary dimensions are mm. Alternate dimensions are inches. 3. All toler ances ± 0.127 [.005] unless specified otherwise. 4. Pins: G1, G2 = gate; D1, D2 = drain; V1, V2 = VDD; S = source. 5. Lead thic 6. Gold plating thic kness: 1.1 ±.38 micron [45 ± 15 microinch]. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V1, V2 – VDD 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. G1 G2 D2D1 V2 32.258 [1.270] 1.626 [0.064] 10.160 [.400] 4X 11.684 [.460] 2X 45° X 1.19 [45° X .047] 2X 1.143 [.045] 16.612±.500 [.654±.020] 9.398 [.370] CL 13.716 [.540] 9.144 [.360] 2X 3.175 [.125] 2X 30° 31.750 [1.250] 2X 2.032 [.080] REF 2.134 [.084] SPH 3.226±0.508 [.127±.020] 31.242±0.280 [1.230±.011] 4.585+0.250-0.127 [ .180 +.010 -.005 ] S 4X R0.508 +.381 -.127 [R.020+.015 -.005 ] CL CL CL CL

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 4.1 2016-06-10 Data Sheet 3 Updated ordering code 05 2018-06-25 Production All Converted to Wolfspeed Data Sheet www.wolfspeed.comRev. 05, 2018-06-25 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTFB183404E/F

Product Information

PTFB183404E specifications and overview.

Summary

High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

Description

High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

Source title PTFB183404E Datasheet(PDF) - Cree, Inc

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