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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
Features
- Broadband internal input and output matching
- Enhanced for use in DPD error correction systems
- Typical two-carrier WCDMA performance,
1880 MHz, 30 V
- Average output power = 50 W - Linear gain = 19 dB - Drain efficiency = 28 % - Intermodulation distortion = –35 dBc
- Typical CW performance, 1880 MHz, 30 V - Output power at P 1dB = 240 W - Efficiency = 55%
- Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
- Integrated ESD protection. Human Body Model, Class 2 (minimum)
- Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power
- Pb-free, RoHS compliant PTFB182503FL H-34288-4/2
Data Sheet 2 of 12 Rev. 07.2, 2016-06-10 PTFB182503EL PTFB182503FL RF Characteristics (cont.) Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.85 A, POUT = 220 W PEP , ƒ = 1840 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 18 — dB Drain Efficiency hD — 40 — % Intermodulation Distortion IMD — –28 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.03 — W Operating Gate Voltage VDS = 30 V, IDQ = 1.85 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 24 to 30 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 50 W WCDMA) RqJC 0.262 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping PTFB182503EL V1 R0 PTFB182503ELV1R0XTMA1 H-33288-6, slotted flange Tape & Reel, 50 pcs PTFB182503EL V1 R250 PTFB182503ELV1R250XTMA1 H-33288-6, slotted flange Tape & Reel, 250 pcs PTFB182503FL V2 R0 PTFB182503FLV2R0XTMA1 H-34288-4/2, earless flange Tape & Reel, 50 pcs PTFB182503FL V2 R250 PTFB182503FLV2R250XTMA1 H-34288-4/2, earless flange Tape & Reel, 250 pcs
Data Sheet 3 of 12 Rev. 07.2, 2016-06-10 -55 -50 -45 -40 -35 -30 38 40 42 44 46 48 50 3rd Order IMD (dBc) Average Output Power (dBm) Two-Carrier WCDMA at Various Biases VDD = 30 V, ƒ = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 5 MHz carrier spacing IDQ = 1.45 A IDQ = 2.25 A IDQ = 1.85 A IDQ = 2.05 A IDQ = 1.65 A -45 -40 -35 -30 -25 -20 -15 -10 37 39 41 43 45 47 49 51 IMD (dBc) Output Power (dBm) Six-Carrier GSM vs Power Out VDD = 30V, IDQ =1.85 A ƒ = 1842 MHz, PAR = 7.1 dB IM3 Up IM3 Low Efficiency Efficiency 35 40 45 50 55 Drain Efficiency (%) Gain (dB) Output Power (dBm) CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz Efficiency Gain 17.0 17.5 18.0 18.5 19.0 19.5 20.0 36 38 40 42 44 46 48 50 52 54 Power Gain (dB) Output Power (dBm) Power Sweep VDD = 30 V, ƒ = 1842 MHz 1.45 A 1.65 A 1.85 A 2.05 A 2.25 A Typical Performance (data taken in a production test fixture)
Data Sheet 4 of 12 Rev. 07.2, 2016-06-10 PTFB182503EL PTFB182503FL 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.7 0.2 0.4 0.6 0.1 0.3 0.5 0.7 0.9 0.2 0.4 0.6 0.8 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.350.40 0.45 0.05 0.10 0.15 0.45 <---W AVELENGTHS TOW ARD LOAD - 0.0 Nornalized to 50 Ohms b182503-v1efl-v1 gb182503eflV1 July 29, 2009 6:57:48 PM Z Load 1780 2.99 -2 1800 2.95 -2 1820 2.89 -2 1840 2.84 -1 1860 2.8 -1. 1880 2.78 -1 1900 2.74 -1 1920 2.72 -1 Z Source
1920 MHz
1780 MHz
Z0 = 50 W -50 -40 -30 -20 -10 23 25 27 29 31 33 Supply Voltage (V) Voltage Sweep IDQ = 1850 mA, ƒ = 1842 MHz, tone spacing =
1 MHz, Output Power (PEP) = 53 dBm
Gain (dB), Drain Efficiency (%) 3rd Order IMD (dBc) 0 40 80 120 160 200 240 Drain Efficiency (%) Gain (dB) Output Power (W) Power Sweep, CW Conditions VDD = 30 V, IDQ = 1850 mA, ƒ = 1842 MHz Gain TCASE = 25°C TCASE = 90°C Efficiency Z Source Z Load G S D Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 1780 2.99 –2.48 1.33 –0.49 1800 2.95 –2.30 1.33 –0.38 1820 2.89 –2.13 1.31 –0.27 1840 2.84 –1.96 1.29 –0.16 1860 2.80 –1.76 1.29 –0.02 1880 2.78 –1.58 1.28 0.10 1900 2.74 –1.39 1.29 0.23 1920 2.72 –1.21 1.29 0.36 Typical Performance (cont.)
Data Sheet 5 of 12 Rev. 07.2, 2016-06-10 PTFB182503EL/FL_INPUT RF_IN In Out NC NC 2 3 4 56 7 TL130 R803
100 Ohm
10 Ohm
0.3 pF TL134 TL135 TL136 TL137 TL138 TL139 R801
1300 Ohm
1200 Ohm
7.5 pF S C B E TL127 TL103 GATE DUT (Pin G) b 1 8 2 5 0 3 e f l _ b d i n _ 0 8 - 1 7 - 2 0 1 0 PTFB182503EL/FL_OUTPUT TL201TL202 TL203TL204 TL205 TL206 TL207 VDD TL208 TL209 TL210 1 2 TL211 1 2 TL212 1 2 TL213 TL214 C201 1000000 pF C202 10000000 pF TL215 C203 1000000 pF C204 10000000 pF TL216 TL217 TL218 TL219TL220 TL221 TL222TL223 C205 0.6 pF C206 0.6 pF C207 10000000 pF TL224 C208 10000000 pF 3TL225 TL226 C209 100000 pF 1 2 TL227 C210 100000 pF TL228 TL229TL230TL231 TL232 TL233 TL234 TL235 DUT (Pin V) TL236 TL237 TL238 TL239 TL240TL241 TL242 C211 0.9 pF C212 0.9 pF C213 2200000 pF C214 10 pF C215 2200000 pF b 1 8 2 5 0 3 e f l _ b d o u t _ 0 8 - 1 7 - 2 0 1 0 DRAIN DUT (Pin D) DUT (Pin V) RF_OUT VDD Reference Circuit Reference circuit input schematic for ƒ = 1880 MHz Reference circuit output schematic for ƒ = 1880 MHz er = 3.48 H = 30 mil RO/RO4350B1 er = 3.48 H = 30 mil RO/RO4350B1
Data Sheet 6 of 12 Rev. 07.2, 2016-06-10 PTFB182503EL PTFB182503FL Reference Circuit (cont.)
Description
DUT PTFB182503EL or PTFB182503FL PCB 0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 1880 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101, TL117 0.022 λ, 78.27 W W = 0.762, L = 2.159 W = 30, L = 85 TL102 0.035 λ, 51.58 W W = 1.651, L = 3.358 W = 65, L = 132 TL103 0.050 λ, 9.67 W W = 13.970, L = 4.445 W = 550, L = 175 TL104 0.031 λ, 51.58 W W = 1.651, L = 3.018 W = 65, L = 119 TL105 W1 = 13.970, W2 = 0.762, W3 = 13.970, W1 = 550, W2 = 30, W3 = 550 W4 = 0.762 W4 = 30 TL106, TL107 W = 0.762 W = 30 TL139 TL111 W1 = 1.651, W2 = 2.032 W1 = 65, W2 = 80 TL112, TL134 0.014 λ, 38.82 W W = 2.540, L = 1.321 W = 100, L = 52 TL113 0.020 λ, 78.27 W W = 0.762, L = 2.007 W = 30, L = 79 TL114 0.099 λ, 92.53 W W = 0.508, L = 9.957 W = 20, L = 392 TL115 0.016 λ, 68.02 W W = 1.016, L = 1.524 W = 40, L = 60 TL116, TL137 0.017 λ, 78.27 W W = 0.762, L = 1.727 W = 30, L = 68 TL118, TL119 0.001 λ, 68.02 W W = 1.016, L = 0.127 W = 40, L = 5 TL120, TL121 0.013 λ, 78.27 W W = 0.762, L = 1.270 W = 30, L = 50 TL122 0.022 λ, 9.67 W W = 13.970, L = 1.981 W = 550, L = 78 TL123, TL124 0.007 λ, 68.02 W W = 1.016, L = 0.686 W = 40, L = 27 TL125, TL126 0.118 λ, 78.27 W W = 0.762, L = 11.684 W = 30, L = 460 TL127 0.008 λ, 45.17 W W = 2.032, L = 0.762 W = 80, L = 30 TL128 0.000 λ, 45.17 W W = 2.032, L = 0.025 W = 80, L = 1 TL130 0.000 λ, 9.67 W W = 13.970, L = 0.025 W = 550, L = 1 TL133 0.050 λ, 9.67 W W = 13.970, L = 4.470 W = 550, L = 176 TL135 0.015 λ, 68.02 W W = 1.016, L = 1.514 W = 40, L = 60 TL138 0.010 λ, 78.27 W W = 0.762, L = 0.991 W = 30, L = 39 table continued on page 7
Data Sheet 7 of 12 Rev. 07.2, 2016-06-10 Reference Circuit (cont.) Electrical Characteristics at 1880 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL201, TL219, TL220, W = 0.002, ANG = 90.000, R = 0.002 W = 2, ANG = 3543307, R = 70 TL222 TL202 W1 = 1.651, W2 = 2.032 W1 = 65, W2 = 80 TL203 0.012 λ, 51.58 W W = 1.651, L = 1.118 W = 65, L = 44 TL204 0.084 λ, 6.86 W W = 20.320, L = 7.366 W = 800, L = 290 TL205 0.011 λ, 45.17 W W = 2.032, L = 1.016 W = 80, L = 40 TL206 0.028 λ, 23.60 W W = 4.928, L = 2.540 W = 194, L = 100 TL207 0.028 λ, 23.79 W W = 4.877, L = 2.540 W = 192, L = 100 TL209, TL210 0.076 λ, 34.08 W W = 3.048, L = 7.112 W = 120, L = 280 TL225 TL218, TL227 TL214, TL215 0.051 λ, 34.08 W W = 3.048, L = 4.826 W = 120, L = 190 TL221, TL242 0.013 λ, 51.58 W W = 1.651, L = 1.270 W = 65, L = 50 TL226 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700 TL229, TL230 0.000 λ, 19.45 W W = 6.248, L = 0.025 W = 246, L = 1 TL232 W1 = 6.248, W2 = 0.025 , W3 = 6.248, W1 = 246, W2 = 1, W3 = 246, W4 = 0.025 W4 = 1 TL233, TL234, TL237, 0.000 λ, 146.88 W W = 0.025, L = 0.025 W = 1, L = 1 TL238 TL235 0.005 λ, 51.58 W W = 1.651, L = 0.508 W = 65, L = 20 TL236 0.000 λ, 8.31 W W = 16.510, L = 0.025 W = 650, L = 1 TL239 W1 = 20.320, W2 = 0.025, W3 = 20.320 W1 = 800, W2 = 1, W3 = 800, W4 = 0.025 W4 = 1 TL240, TL241 0.000 λ, 6.86 W W = 20.320, L = 0.025 W = 800, L = 1
Data Sheet 8 of 12 Rev. 07.2, 2016-06-10 PTFB182503EL PTFB182503FL b 1 8 2 5 0 3 e f l _ C D _ 0 8 - 1 7 - 2 0 1 0 PTFB182503_OUT_02PTFB182503_IN_02 RO4350, .030 (60) RO4350, .030 (60) 10 µF C802C803 R803 R801 R802 R101 C101 C103 C104 C105 C102 C106 R102 R805 R804 C201 C202 C203 C204 C205 C206 C207 C208 C209 C210 C211 C212 C213 C214 C215 C801 RF_IN RF_OUT VDD VDD VDD 10 µF Reference Circuit (cont.) Reference circuit assembly diagram (not to scale) Circuit Assembly Information Test Fixture Part No. LTN/PTFB182503EF Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Data Sheet 9 of 12 Rev. 07.2, 2016-06-10 Reference Circuit (cont.) Component Description Suggested Manufacturer P/N Input C101 Chip capacitor, 7.5 pF ATC ATC100B7R5BW500XB C102, C103 Chip capacitor, 4.71 µF ATC 493-2372-2-ND C104 Chip capacitor, 0.3 pF ATC ATC100A0R3BW150XB C105, C106 Chip capacitor, 10 pF ATC ATC100A100FW150XB C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT -ND R101, R102, R804, R805 Resistor, 10 W Digi-Key P10ECT -ND R801 Resistor, 1300 W Digi-Key P1.3KGCT -ND R802 Resistor, 1200 W Digi-Key P1.2KGCT -ND R803 Resistor, 100 W Digi-Key P100ECT -ND S1 Potentiometer, 2k W Digi-Key 3224W-202ECT -ND S2 Transistor Digi-Key BCP5616TA-ND S3 Voltage Regulator Digi-Key LM78L05ACM-ND Output C201, C203 Chip capacitor, 0.1 µF Digi-Key 445-1411-2-ND C202, C204 Capacitor, 10 µF Garrett Electronics 281M5002106K C205, C206 Chip capacitor, 0.6 pF ATC ATC100B0R6BW500XB C207, C208 Chip capacitor, 10 µF Digi-Key 587-1818-2-ND C209, C210 Chip capacitor, 0.1 µF Digi-Key 399-1267-2-ND C211, C212 Chip capacitor, 0.9 pF ATC ATC100B0R9BW500XB C213, C215 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND C214 Chip capacitor, 10 pF ATC ATC100B100FW500XB
Data Sheet 10 of 12 Rev. 07.2, 2016-06-10 PTFB182503EL PTFB182503FL Package Outline Specifications Package H-33288-6 22.352±.200 [.880±.008] 34.036 [1.340] LC 1.016 [.040] 1.575 [.062] (SPH) 4.039+.254 -.127 [.159+.010 -.005 ] D G VV FE LC 19.558±.510 [.770±.020] 9.779 [.385]9.398 [.370]LC 2X 12.700 [.500] 4X 30° 2X 22.860 [.900] 27.940 [1.100] 2X R1.626 [R.064] 45° X 2.032 [45° X .080] 4.889±.510 [.192±.020] 4X 1.143 [.045] (4 PLS) 2X 5.080 [.200] (2 PLS) 4X R1.524 [R.060] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD; E, F – N.C. 6. Gold plating thickness: 0.25 micron [10 microinch] max.
Data Sheet 11 of 12 Rev. 07.2, 2016-06-10 Package Outline Specifications (cont.) Package H-34288-4/2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD 6. Gold plating thickness: 0.25 micron [10 microinch] max. 23.114 [.910] 1.016 [.040] 1.575 [.062] (SPH) 22.352±.200 [.880±.008] 4.039+.254 -.127 [.159+.010 -.005 ] S LC LC D G CL 19.558±.510 [.770±.020] 2X 12.700 [.500] 45° X 2.032 [45° X .080] 2X 1.143 [.045] 9.398 [.370] 9.779 [.385] 22.860 [.900] 2X 5.080 [.200] 4.889±.510 [.192±.020] V V 2X 30° 4X R0.508+.381 -.127 [R.020+.015 -.005 ]
Data Sheet 12 of 12 Rev. 07.2, 2016-06-10 Edition 2016-06-10 Published by Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFB182503EL V1 / PTFB182503FL V2 Revision History: 2016-06-10 Data Sheet Previous Version: 2013-08-06, Data Sheet Page Subjects (major changes since last revision)