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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
- Broadband internal matching
- Typical CW performance, 1842 MHz, 28 V - Output power at P1dB = 180 W - Efficiency = 58% - Gain = 18.5 dB
- Capable of handling 10:1 VSWR @28 V, 170 W (CW) output power
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 1300 mA, POUT = 30 W avg, ƒ1 = 1870 MHz, ƒ2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 18 19 — dB Drain Efficiency hD 24 26 — % Intermodulation Distortion IMD — –35 –33 dBc 34 36 38 40 42 44 46 48 50 52 Efficiency (%) Gain (dB) Average Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.3 A, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
1805 MHz
1842.5 MHz
1880 MHz
Data Sheet 2 of 8 Rev. 02.1, 2016-06-10 PTFB181702FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.11 — W Operating Gate Voltage VDS = 28 V, IDQ = 650 mA VGS 2.5 3.0 3.5 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 170 W CW) RqJC 0.27 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping PTFB181702FC V1 R0 PTFB181702FCV1R0XTMA1 H-37248-4, earless flange Tape & Reel, 50 pcs PTFB181702FC V1 R250 PTFB181702FCV1R250XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs
Data Sheet 3 of 8 Rev. 02.1, 2016-06-10 Typical Performance (data taken in a production test fixture) -40 -35 -30 -25 -20 -15 -10 -16 -14 -12 -10 1690 1730 1770 1810 1850 1890 1930 1970 ACPR (dBc) Return Loss (dB) Frequency (MHz) Single-carrier Broadband Performance VDD = 28 V, IDQ = 1.3 A, POUT = 80 W, 3GPP WCDMA signal, PAR = 10 dB Return Loss ACPR b181702fc-g3 42 1690 1730 1770 1810 1850 1890 1930 1970 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier Broadband Performance VDD = 28 V, IDQ = 1.3 A, POUT = 80 W, 3GPP WCDMA signal, PAR = 10 dB Gain Efficiency b181702fc-g2 -80 -70 -60 -50 -40 -30 -20 38 41 43 46 48 51 53 IMD (dBc) Output Power, PEP (dBm) Two-tone Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 1.3 A, ƒ1 = 1880 MHz, ƒ2 = 1879 MHz IM3 IM7 IM5 b181702fc-g5 -55 -50 -45 -40 -35 -30 -25 -20 -15 34 36 38 40 42 44 46 48 50 52 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.3 A, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
1880 Lower
1880 Upper
1842.5 Lower
1842.5 Upper
1805 Lower
1805 Upper
Data Sheet 4 of 8 Rev. 02.1, 2016-06-10 PTFB181702FC Typical Performance (cont.) Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 1805 2.99 –6.14 1.87 –4.46 1825 2.99 –6.08 1.52 –4.50 1845 3.00 –6.03 1.35 –4.34 1865 3.00 –5.97 1.25 –4.19 1880 3.00 –5.94 1.20 –4.08 17.5 18.0 18.5 19.0 19.5 20.0 20.5 37 39 41 43 45 47 49 51 53 Power Gain (dB) Output Power (dBm) CW Gain vs. Output Power VDD = 28 V, ƒ = 1880 MHz IDQ = 1.6 A IDQ = 1.3 A IDQ = 1.0 A b181702fc-g6 0 37 39 41 43 45 47 49 51 53 Drain Efficiency (%) Gain (dB) Output Power (dBm) CW Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 1.3 A, ƒ = 1880 MHz -10 °C +25 °C +85 °C Gain b181702fc-g4 Z Source Z Load SG1
Data Sheet 5 of 8 Rev. 02.1, 2016-06-10 Reference Circuit Reference circuit assembly diagram (not to scale)* PTFB181702F_IN_02 RF_OUT PTFB181702F_OUT_01 RF_IN RO4350, .020 (60) RO4350, .020 (60) b 1 8 1 7 0 2 f c _ C D _ 1 0 - 1 8 - 2 0 1 2 C201 C202 C209C210 C211 C203 C206 C204 C207 C102 R803 R802 R801 R102 C801 C802 C803 C101 C103 C104C105 C106 C107 R101 C804 L101 L102 R804 S3 S2 C205 C208 VDD VDD VG2 VDD VG1
Data Sheet 6 of 8 Rev. 02.1, 2016-06-10 PTFB181702FC Reference Circuit (cont.) Reference Circuit Assembly DUT PTFB181702FC Test Fixture Part No. LTN/PTFB181702FC PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Supplier P/N Input C101, C102 Capacitor, 10 µF Digi-Key 490-4393-2-ND C103, C104 Capacitor, 18 pF ATC ATC800A180JT250XT C105 Capacitor, 1.5 pF ATC ATC800A1R5BT250XT C106, C107 EMI Suppression Capacitor Digi-Key NFM18PS105R0J3D-ND C801, C804 Capacitor, 10 µF Digi-Key 587-1818-2-ND C802 Chip capacitor, 1000 pF Digi-Key PCC1772CT -ND C803 Capacitor, 1 µF Digi-Key 490-4736-2-ND L101, L102 Inductor, 27.3 nH Coilcraft 0908SQ-27NGLB R101, R102, R803 Resistor, 10 ohm Digi-Key P10GTR-ND R801 Resistor, 100 ohm Digi-Key P100GTR-ND R802 Resistor, 1300 ohm Digi-Key P1.3KGTR-ND R804 Resistor, 1200 ohm Digi-Key P1.2KGTR-ND S1 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND S2 Transistor Digi-Key BCP56-ND S3 Voltage Regulator Digi-Key LM7805 Output C201, C211 Chip capacitor, 1.2 pF ATC ATC800A1R2BT250XT C202, C203, C204 Chip capacitor, 18 pF ATC ATC800A180JT250XT C205, C208 Capacitor, 220 µF Digi-Key PCE4444TR-ND C206, C207, C209, C210 Capacitor, 10 µF Digi-Key 587-1818-2-ND Pinout Diagram (top view) Lead connections for PTFB181702FC S D1 D2 G1 G2 Pin Description D1 Drain Device 1 D2 Drain Device 2 G1 Gate Device 1 G2 Gate Device 2 S Source (flange)
Data Sheet 7 of 8 Rev. 02.1, 2016-06-10 Package Outline Specifications Package H-37248-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-
Data Sheet 8 of 8 Rev. 02.1, 2016-06-10 Edition 2016-06-10 Published by Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFb181702FC V1
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-05-29 Advance All Data Sheet reflects advance specification for product development 02 2012-10-15 Advance All Data sheet reflects released product specifications 02.1 2016-06-10 Production 2, 7 Updated ordering code to R0, revised package outline-minor changes