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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • Broadband internal matching
  • Typical CW performance, 1842 MHz, 28 V - Output power at P1dB = 180 W - Efficiency = 58% - Gain = 18.5 dB
  • Capable of handling 10:1 VSWR @28 V, 170 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Wolfspeed test fixture) VDD = 28 V, IDQ = 1300 mA, POUT = 30 W avg, ƒ1 = 1870 MHz, ƒ2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 18 19 — dB Drain Efficiency hD 24 26 — % Intermodulation Distortion IMD — –35 –33 dBc 34 36 38 40 42 44 46 48 50 52 Efficiency (%) Gain (dB) Average Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.3 A, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz

1805 MHz

1842.5 MHz

1880 MHz

not recommended for new design PTFB181702FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-08-20 2PTFB181702FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V( BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V R DS(on) — 0.11 — W Operating Gate Voltage VDS = 28 V, IDQ = 650 mA V GS 2.5 3.0 3.5 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 170 W CW) RqJC 0.27 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTFB181702FC V1 R0 PTFB181702FC-V1-R0 H-37248-4, earless flange Tape & Reel, 50 pcs PTFB181702FC V1 R250 PTFB181702FC-V1-R250 H-37248-4, earless flange Tape & Reel, 250 pcs not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-08-20 3PTFB181702FC Typical Performance (data taken in a production test fixture) -40 -35 -30 -25 -20 -15 -10 -16 -14 -12 -10 1690 1730 1770 1810 1850 1890 1930 1970 ACPR (dBc) Return Loss (dB) Frequency (MHz) Single-carrier Broadband Performance VDD = 28 V, IDQ = 1.3 A, POUT = 80 W, 3GPP WCDMA signal, PAR = 10 dB Return Loss ACPR b181702fc-g3 42 1690 1730 1770 1810 1850 1890 1930 1970 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier Broadband Performance VDD = 28 V, IDQ = 1.3 A, POUT = 80 W, 3GPP WCDMA signal, PAR = 10 dB Gain Efficiency b181702fc-g2 -80 -70 -60 -50 -40 -30 -20 38 41 43 46 48 51 53 IMD (dBc) Output Power, PEP (dBm) Two-tone Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 1.3 A, ƒ1 = 1880 MHz, ƒ2 = 1879 MHz IM3 IM7 IM5 b181702fc-g5 -55 -50 -45 -40 -35 -30 -25 -20 -15 34 36 38 40 42 44 46 48 50 52 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.3 A, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz

1880 Lower

1880 Upper

1842.5 Lower

1842.5 Upper

1805 Lower

1805 Upper

not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-08-20 4PTFB181702FC Typical Performance (cont.) Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 1805 2.99 –6.14 1.87 –4.46 1825 2.99 –6.08 1.52 –4.50 1845 3.00 –6.03 1.35 –4.34 1865 3.00 –5.97 1.25 –4.19 1880 3.00 –5.94 1.20 –4.08 17.5 18.0 18.5 19.0 19.5 20.0 20.5 37 39 41 43 45 47 49 51 53 Power Gain (dB) Output Power (dBm) CW Gain vs. Output Power VDD = 28 V, ƒ = 1880 MHz IDQ = 1.6 A IDQ = 1.3 A IDQ = 1.0 A b181702fc-g6 0 37 39 41 43 45 47 49 51 53 Drain Efficiency (%) Gain (dB) Output Power (dBm) CW Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 1.3 A, ƒ = 1880 MHz -10 °C +25 °C +85 °C Gain b181702fc-g4 Z Source Z Load SG1 not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-08-20 5PTFB181702FC Reference Circuit Reference circuit assembly diagram (not to scale)* PTFB181702F_IN_02 RF_OUT PTFB181702F_OUT_01 RF_IN RO4350, .020 (60) RO4350, .020 (60) b 1 8 1 7 0 2 f c _ C D _ 1 0 - 1 8 - 2 0 1 2 C201 C202 C209C210 C211 C203 C206 C204 C207 C102 R803 R802 R801 R102 C801 C802 C803 C101 C103 C104C105 C106 C107 R101 C804 L101 L102 R804 S3 S2 C205 C208 VDD VDD VG2 VDD VG1 not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-08-20 6PTFB181702FC Reference Circuit (cont.) Reference Circuit Assembly DUT PTFB181702FC Test Fixture Part No. LTN/PTFB181702FC PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF Components Information Component Description Suggested Supplier P/N Input C101, C102 Capacitor, 10 µF Digi-Key 490-4393-2-ND C103, C104 Capacitor, 18 pF ATC ATC800A180JT250XT C105 Capacitor, 1.5 pF ATC ATC800A1R5BT250XT C106, C107 EMI Suppression Capacitor Digi-Key NFM18PS105R0J3D-ND C801, C804 Capacitor, 10 µF Digi-Key 587-1818-2-ND C802 Chip capacitor, 1000 pF Digi-Key PCC1772CT -ND C803 Capacitor, 1 µF Digi-Key 490-4736-2-ND L101, L102 Inductor, 27.3 nH Coilcraft 0908SQ-27NGLB R101, R102, R803 Resistor, 10 ohm Digi-Key P10GTR-ND R801 Resistor, 100 ohm Digi-Key P100GTR-ND R802 Resistor, 1300 ohm Digi-Key P1.3KGTR-ND R804 Resistor, 1200 ohm Digi-Key P1.2KGTR-ND S1 Potentiometer, 2k W Digi-Key 3224W-202ECT -ND S2 Transistor Digi-Key BCP56-ND S3 Voltage Regulator Digi-Key LM7805 Output C201, C211 Chip capacitor, 1.2 pF ATC ATC800A1R2BT250XT C202, C203, C204 Chip capacitor, 18 pF ATC ATC800A180JT250XT C205, C208 Capacitor, 220 μF Digi-Key PCE4444TR-ND C206, C207, C209, C210 Capacitor, 10 µF Digi-Key 587-1818-2-ND Pinout Diagram (top view) Lead connections for PTFB181702FC S D1 D2 G1 G2 Pin Description D1 Drain Device 1 D2 Drain Device 2 G1 Gate Device 1 G2 Gate Device 2 S Source (flange) not recommended for new design

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-08-20 7PTFB181702FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A- not recommended for new design

www.wolfspeed.comRev. 04, 2018-08-20 PTFB181702FC Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-05-29 Advance All Data Sheet reflects advance specification for product development 02 2012-10-15 Advance All Data sheet reflects released product specifications 02.1 2016-06-10 Production 2, 7 Updated ordering code to R0, revised package outline-minor changes 03 2018-02-21 Production All Not recommended for new design 04 2018-08-20 Production All Converted to Wolfspeed data sheet not recommended for new design