PTFB092707FHV1R0

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Document overview

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• PDF pages: 10

Technical content

Features

• Broadband internal input and output matching
• Typical pulsed CW performance (10 µs pulse width10%, duty cycle, class AB), 960 MHz, 28 V - Output power at P 1dB = 250 W - Efficiency = 52% - Gain = 18.5 dB
• Typical single-carrier WCDMA performance, 960 MHz, 28 V, 7.5 dB PAR @ 0.01% CCDF , - Output power = 63 W - Efficiency = 33% - Gain = 19.5 dB - ACPR = –35 dBc @ 3.84 MHz
• Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant

Description

The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output match- ing, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 2150 mA, POUT = 60 W avg, ƒ = 960 MHz, 3GPP signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF , 10 MHz spacing Characteristic Symbol Min Typ Max Unit Gain Gps 18 19 — dB Drain Efficiency hD 28 29 — % Intermodulation Distortion IMD — –34 –33 dBc 29 33 37 41 45 49 53 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2150 mA, ƒ = 925 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency b092707fh-gr1a

Data Sheet 2 of 10 Rev. 03.1, 2016-06-10 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 2150 mA VGS 2.5 3.9 4.5 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 220 W CW) RqJC 0.214 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PTFB092707FH V1 R0 PTFB092707FHV1R0XTMA1 H-37288L-4/2, earless flange T ape & Reel, 50 pcs PTFB092707FH V1 R250 PTFB092707FHV1R250XTMA1 H-37288L-4/2, earless flange T ape & Reel, 250 pcs

Data Sheet 3 of 10 Rev. 03.1, 2016-06-10 PTFB092707FH 29 33 37 41 45 49 53 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2150 mA, ƒ = 940 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency b092707fh-gr1b 0 29 33 37 41 45 49 53 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2150 mA, ƒ = 960 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency b092707fh-gr1c -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 53 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2150 mA, ƒ = 925 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency b092707fh-gr2a -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 53 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2150 mA, ƒ = 940 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency b092707fh-gr2b Typical Performance (data taken in an Infineon test fixture)

Data Sheet 4 of 10 Rev. 03.1, 2016-06-10 29 33 37 41 45 49 53 57 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 2150 mA, ƒ = 925 MHz Gain Efficiency b092707fh-gr5a VDD = 24 V VDD = 28 V VDD = 32 V -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 53 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2150 mA, ƒ = 960 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency b092707fh-gr2c 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 2150 mA Gain Efficiency b092707fh-gr4

925 MHz

940 MHz

960 MHz

Typical Performance (cont.) -55 -45 -35 -25 -15 29 33 37 41 45 49 53 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2150 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW b092707fh-gr3 IMD Up IMD Low

Data Sheet 5 of 10 Rev. 03.1, 2016-06-10 PTFB092707FH 29 33 37 41 45 49 53 57 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 2150 mA, ƒ = 940 MHz Gain Efficiency b092707fh-gr5b VDD = 24 V VDD = 28 V VDD = 32 V 29 33 37 41 45 49 53 57 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 2150 mA, ƒ = 960 MHz Gain Efficiency b092707fh-gr5c VDD = 24 V VDD = 28 V VDD = 32 V -25 -20 -15 -10 850 900 950 1000 1050 1100 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 2150 mA Gain IRL b092707fh-gr6 Typical Performance (cont.)

Data Sheet 6 of 10 Rev. 03.1, 2016-06-10 Load Pull Performance Z Source Z Load G S D Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 900 1.52 –1.80 0.98 –1.65 920 1.55 –1.69 0.89 –1.54 940 1.59 –1.60 0.82 –1.42 960 1.63 –1.53 0.74 –1.29 980 1.65 –1.48 0.67 –1.16 Pulsed CW signal: 10 µsec, 10% duty cycle, 28 V, 2.0 A P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Reference Circuit, tuned for 925 – 960 MHz DUT PTFB092707FH V1 Reference Circuit Part No. LTN/PTFB092707FH V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference fixture on the Infineon Web site (www.infineon.com/rfpower)

Data Sheet 7 of 10 Rev. 03.1, 2016-06-10 PTFB092707FH Reference Circuit (cont.) Reference circuit assembly diagram (not to scale) Assembly Information Component Description Suggested Manufacturer P/N Input C101 Chip capacitor, 1 pF ATC ATC100B1R0CW500XB C102 Chip capacitor, 0.002 µF ATC ATC200B203MW50X C103 Chip capacitor, 4.7 pF ATC ATC100B4R7CW500XB C104 Chip capacitor, 33 pF ATC ATC100B330JW C105 Capacitor 4.7 µF Nichicon F931C475MAA C106, C108 Chip capacitor, 56 pF ATC ATC100B560JT C107 Chip capacitor, 12 pF ATC ATC100B120JW C109 Chip capacitor, 4.7 pF ATC ATC100B4R7CT C110 Chip capacitor, 0.01 µF ATC ATC200B103MW50X C801, C804 Chip capacitor, 0.1 µF Panasonic Electronic Components ECJ-3VB1H104K C802, C803, C805 Chip capacitor, 0.001 µF Panasonic ECJ-1VB1H102K R101, R801, R803 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R102, R103 Resistor, 20 W Panasonic Electronic Components ERJ-8GEYJ200V R802 Resistor, 1k W Panasonic Electronic Components ERJ-8GEYJ102V R804 1.3k ohms Panasonic Electronic Components ERJ-3GEYJ132V R805 1.2k ohms Panasonic Electronic Components ERJ-3GEYJ122V (table cont. next page) b 0 9 2 7 0 7 f h _ c d _ 2 0 1 4 - 0 3 - 2 7 PTFB092707FH/1_OUT_01 (62)RO4350, .020 C214 C217 C206 C216 C201 C209 C207 C211 C203 C204 C212 C213 C202 C210 C218 C208 C215 (62)RO4350, .020 PTFB092707FH/1_IN_01 R801 C801 R803 C804 R802 C803 R804 R805 C802 C805 C101 C106 C110C103 R101 C107 C108 C109 C104 C105 R102C102 R103 S3 RF_OUTRF_IN VDD VDD PTFB092707FH C205

Data Sheet 8 of 10 Rev. 03.1, 2016-06-10 Reference Circuit (cont.) Lead connections for PTFB092707FH Pinout Diagram (top view) Assembly Information (cont.) Component Description Suggested Manufacturer P/N S1 Transistor Fairchild Semiconductor BCP56-10 S2 Potentiometer, 2k W Bourns Inc. 3224W-1-202E S3 Voltage regulator Fairchild Semiconductor LM7805 Output C201, C212 Chip capacitor, 10 µF Matsuo 281M5002106K C202 Chip capacitor, 2.2 pF ATC ATC100B2R2CW C203, C213 Ceramic capacitor, 1 µF , 250 V AVX Corporation 2225PC105KAT1A C204, C205, C214, C215 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C206 Chip capacitor, 4.2 pF ATC ATC100B4R2CT C207 Chip capacitor, 56 pF ATC ATC100B560JT C208 Chip capacitor, 3.3 pF ATC ATC100B3R3CW C209, C216, C217, C218 Ceramic capacitor, 4.7 µF , 50 V Murata Electronics North America GRM32ER71H475KA88L C210, C211 Capacitor, 10k pF ATC ATC200B103MW50X G D S V V h - 3 7 2 8 8 L - 4 / 2 _ p d _ 3 - 2 7 - 2 0 1 4 Pin Description D Drain G Gate S (flange) Source V Supply voltage, VDD

Data Sheet 9 of 10 Rev. 03.1, 2016-06-10 PTFB092707FH Package Outline Specifications Package H-37288L-4/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. 2X 1.02 [.040] 4.03 [.158] 2X 17.75 [.699] CL CL CL 45° x 1.96 [.077] G D VV 1.02 [.040] 23.11 [.910] S 22.35±0.20 [.880±.008] 9.78 [.385] 4X 4.83±0.51 [.190±.020] CL 4.04+0.25 -0.13 [.159+.010 -.005 ] (19.43 [.765]) LC 2X 5.46 [.215] 2X 2.16 [.085] 22.86 [.900] 25.81 [1.016] 2X 4.06 [.160] 9.40 [.370] 1.57 [.062] SPH D 4X R0.51+0.38 -0.13 [R.020+.015 -.005 ] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D – drain, G – gate, S (flange) – source, V – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information tabout products and packaging at the Infineon Internet page (www.infineon.com/rfpower)

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© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 10 of 10 Rev. 03.1, 2016-06-10 PTFB092707FH V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2011-03-25 Advance All New product, proposed only 02 2014-02-25 Advance All Package changed, revised all data 03 2014-04-01 Production All Data Sheet now represents production-released product specificaitons, including reference circuit and performance information 03.1 2016-06-10 Production 2 Updated ordering code to R0