PTFB091802FCV1R0

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Features

• Broadband internal input and output matching
• Dual path design (2 X 90 W)
• Typical CW performance at 960 MHz, 28 V - Ouput power @ P1dB = 206 W - Efficiency = 56% - Gain = 18 dB
• Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS-compliant -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10.0 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF ptfb091802fc_g1

Data Sheet 2 of 9 Rev. 02.1, 2016-06-10 PTFB091802FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.15 — W Operating Gate Voltage VDS = 28 V, IDQ = 1400 mA VGS 2.5 3.9 4.5 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 190 W CW) RqJC 0.38 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTFB091802FC V1 R0 PTFB091802FCV1R0XTMA1 H-37248-4, earless flange Tape & Reel, 50 pcs PTFB091802FC V1 R250 PTFB091802FCV1R250XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 9 Rev. 02.1, 2016-06-10 Typical Performance (data taken in a production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiecy ptfb091802fc_g2 -55 -50 -45 -40 -35 -30 -25 -20 25 30 35 40 45 50 55 ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 1400 mA, ƒ = 920-960 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz 960MHz ACPU 960MHz ACPL 940MHz ACPU 940MHz ACPL 920MHz ACPU 920MHz ACPL ptfb091802fc_g3 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 1400mA 960MHz Gain 940MHz Gain 920MHz Gain 960MHz Eff 940MHz Eff 920MHz Eff ptfb091802fc_g4 0 27 31 35 39 43 47 51 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 1400 mA, ƒ = 960 MHz 24V Gain 28V Gain 32V Gain 24V Eff 28V Eff Efficiency Gain ptfb091802fc_g5

Data Sheet 4 of 9 Rev. 02.1, 2016-06-10 PTFB091802FC Typical Performance (cont.) Load Pull Performance Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, IDQ = 1400 mA P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] -20 -15 -10 750 800 850 900 950 1000 1050 1100 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 28 V, IDQ = 1400 mA IRL Gain ptfb091802fc_g6

Data Sheet 5 of 9 Rev. 02.1, 2016-06-10 Reference Circuit , 920 – 960 MHz Reference circuit assembly diagram (not to scale) C102RF_IN RF_OUT VDD VDD p t f b 0 9 1 8 0 2 f c _ C D _ 0 3 - 2 6 - 2 0 1 5 C101 C103 C105 C104 C106 C108 C107 C109 R102 R101 R103 C205 C204 C206 C208 C207 C209 R802 R803 R805 R804 C202 C201 C203 RO4350, .020 (62) C110 C211 C212 C215 C213 C210 C216 S1S3 R801 C804C801 C802 C805 C803 C210 C214 PTB091802FC_OUT_01PTB091802FC_IN_01 RO4350, .020 (62)

Data Sheet 6 of 9 Rev. 02.1, 2016-06-10 PTFB091802FC Reference Circuit (cont.) Reference Circuit Assembly DUT PTFB091802FC V1 Test Fixture Part No. LTN/PTFB091802FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 920 – 960 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Inform Component Description Manufacturer P/N Input C101 Capacitor, 33 pF ATC ATC100B330JW500XB C102, C107 CAPACITOR, 56 pF ATC ATC100B560JW500XB C103 CAPACITOR, 2.6 pF ATC ATC100B2R6CW500XB C104 CAPACITOR, 4.7 pF ATC ATC100B4R7CW500XB C105 Tantalum Capacitor, 4.7 µF AVX Corporation F931C475MAA C106 Capacitor, 20000 pF ATC ATC200B203MC C108, C109 Capacitor, 3.9 pF ATC ATC100B3R9CW500XB C110 Capacitor, 10000 pF ATC ATC200B103MC C801, C802, C804 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K C803, C805 Capacitor, 0.1 µF Panasonic Electronic Components ECJ-3VB1H104 R101, R102 Resistor, 220 W Panasonic Electronic Components ERJ-8GEYJ221V R103, R803, R805 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R801 Resistor, 1300 W Panasonic Electronic Components ERJ-3GEYJ132V R802 Resistor, 1200 W Panasonic Electronic Components ERJ-3GEYJ122V R804 Resistor, 2000 W Panasonic Electronic Components ERJ-8GEYJ202V S1 Transistor Infineon Technologies BCP56 S2 Potentiometer, 2k W Bourns Inc. 3224W-1-202E S3 Voltage Regulator Texas Instruments LM78L05ACM Output C201, C202, C206, C208 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C203, C212, C213 Capacitor, 56 pF ATC ATC100B560JW500XB C204 Capacitor, 2.2 pF ATC ATC100B2R2CW500XB C205, C207, C209, C216 Capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88 C210, C214 Capacitor, 100 µF Panasonic Electronic Components EEE-FP1V101AP C211 Capacitor, 1.5 pF ATC ATC100B1R5CW500XB C215 Capacitor, 1.7 pF ATC ATC100B1R7CW500XB

Data Sheet 7 of 9 Rev. 02.1, 2016-06-10 Pinout Diagram (top view) Pin Description D1 Drain device 1 D2 Drain device 2 G1 Gate device 1 G2 Gate device 2 S Source (flange) Lead connections for PTFB091802FC S D1 D2 G1 G2

Data Sheet 8 of 9 Rev. 02.1, 2016-06-10 PTFB091802FC Package Outline Specifications Package H-37248-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

Data Sheet 9 of 9 Rev. 02.1, 2016-06-10 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2016-06-10 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTFB091802FC V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-07-22 Advance All Data Sheet reflects advance specification for product development 02 2015-03-27 Production All All Data Sheet reflects released product specification Revised all data and includes updated final specs, typical performance graphs, loadpull, refer- ence circuit, package outline 02.1 2016-06-10 Production 2 Updated ordering code to R0