PTFB091507FHV1R0

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Document overview

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• PDF pages: 13

Technical content

Features

• Broadband internal matching
• Wide video bandwidth
• Typical CW performance, 960 MHz, 28 V - Average output power = 160 W - Gain = 19.5 dB - Efficiency = 60%
• Integrated ESD protection
• Low thermal resistance
• Thermally enhanced package is Pb-free and RoHS compliant
• Capable of handling 10:1 VSWR @ 28 V, 160 W (CW) output power RF Characteristics Single-carrier WCDMA Specifications (not subject to production test; verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 50 W average ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF probability Characteristic Symbol Min Typ Max Unit Gain Gps — 20 — dB Drain Efficiency hD — 38 — % Adjacent Channel Power Ratio ACPR — –36 — dBc

Data Sheet 2 of 13 Rev. 03.1, 2016-06-09 Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 70 W avg, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 19.5 20 — dB Drain Efficiency hD 43.5 45 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 1.2 A VGS 2.5 3.9 4.5 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.31 °C/W RF Characteristics (cont.)

Ordering Information

Type and Version Order Code Package Description Shipping PTFB091507FH V1 R0 PTFB091507FHV1R0XTMA1 H-34288-4/2, earless flange Tape & Reel, 50 pcs PTFB091507FH V1 R250 PTFB091507FHV1R250XTMA1 H-34288-4/2, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 13 Rev. 03.1, 2016-06-09 PTFB091507FH -40 -30 -20 n Efficiency (%) IMD (dBc) Two-tone Drive-up VDD = 28 V, IDQ = 2.4 A, ƒ1 = 960 MHz, ƒ2 = 959 MHz Efficiency -60 -50 -40 -30 -20 38 40 42 44 46 48 50 Drain Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up VDD = 28 V, IDQ = 2.4 A, ƒ1 = 960 MHz, ƒ2 = 959 MHz Efficiency IMD 3rd Order -40 -30 -20 Order IMB (dBc) Two-tone Drive-up at Selected Frequencies VDD = 28 V, IDQ = 1.2 A, tone spacing = 1 MHz

960 MHz

940 MHz

920 MHz

-60 -50 -40 -30 -20 42 44 46 48 50 52 3rd Order IMB (dBc) Output Power, PEP (dBm) Two-tone Drive-up at Selected Frequencies VDD = 28 V, IDQ = 1.2 A, tone spacing = 1 MHz -30 -20 -10 Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency VDD = 28 V, IDQ = 1.2 A, POUT = 63 W Efficiency Input Return Loss IMD3 oss (dB) / IMD (dBc) ) / Efficiency (%) -50 -40 -30 -20 -10 840 890 940 990 1040 Frequency (MHz) Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency VDD = 28 V, IDQ = 1.2 A, POUT = 63 W Gain Efficiency Input Return Loss IMD3 Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) 20.0 20.5 21.0 n Efficiency (%) Gain (dB) Two-tone Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ1 = 960 MHz, ƒ2 = 959 MHz Effi i Gain 19.0 19.5 20.0 20.5 21.0 38 40 42 44 46 48 50 Drain Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ1 = 960 MHz, ƒ2 = 959 MHz Efficiency Gain Typical Performance (data taken in Infineon test fixture)

Data Sheet 4 of 13 Rev. 03.1, 2016-06-09 -45 -35 -25 rder IMB (dBc) Intermodulation Distortion VDD = 28 V, IDQ = 1.2 A,, ƒ1 = 960 MHz, ƒ2 = 959 MHz 3rd Order 5th 7th -65 -55 -45 -35 -25 41 43 45 47 49 51 53 3rd Order IMB (dBc) Output Power, PEP (dBm) Intermodulation Distortion VDD = 28 V, IDQ = 1.2 A,, ƒ1 = 960 MHz, ƒ2 = 959 MHz 3rd Order 5th 7th Efficiency ACP Up Efficiency ACP Low -55 -45 -35 -25 -15 42 44 46 48 50 Drain Efficiency (%) ACP (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz -20 cy (%) / Gain (dB) dB) / ACPR (dBc) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz PAR* Efficiency -60 -40 42 44 46 48 50 Efficienc PAR (d Average Output Power (dBm) ACPR Gain -20 PAR (dB) ACPR (dBc) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz PAR* -60 -40 -20 42 44 46 48 50 PAR (dB) ACPR (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz ACPR PAR* Typical Performance (cont.) *Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve

Data Sheet 5 of 13 Rev. 03.1, 2016-06-09 PTFB091507FH -20 ncy (%) / Gain (dB) (dB) / ACPR (dBc) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz PAR* Efficiency -60 -40 -20 42 44 46 48 50 Efficiency (%) / Gain (dB) PAR (dB) / ACPR (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz ACPR PAR* Efficiency Gain -20 cy (%) / Gain (dB) dB) / ACPR (dBc) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz PAR* Efficiency -60 -40 42 44 46 48 50 Efficienc PAR (d Average Output Power (dBm) ACPR Gain -20 PAR (dB) ACPR (dBc) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz PAR* -60 -40 -20 42 44 46 48 50 PAR (dB) ACPR (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz ACPR PAR* -20 PAR (dB) ACPR (dBc) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz PAR* -60 -40 -20 42 44 46 48 50 PAR (dB) ACPR (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz ACPR PAR* Typical Performance (cont.) *Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve

Data Sheet 6 of 13 Rev. 03.1, 2016-06-09 Z Source Z Load G S D Broadband Circuit Impedance Frequency Z source (W) Z Load (W) MHz R jX R jX 910 2.23 -3.12 1.53 -0.87 920 2.23 -3.03 1.52 -0.84 930 2.23 -2.95 1.50 -0.81 940 2.24 -2.87 1.49 -0.77 950 2.25 -2.80 1.46 -0.74 960 2.26 -2.73 1.44 -0.71 970 2.27 -2.65 1.42 -0.67 See next page for Reference Circuit information

Data Sheet 7 of 13 Rev. 03.1, 2016-06-09 PTFB091507FH Reference Circuit TL142 TL140 TL141 TL105 TL104 TL107 TL108 C101 33 pF 1 2 TL110 1 2 TL111 TL112TL113 TL114 TL115 TL116 TL117 TL118 TL119 TL120 TL121 TL122 TL123 TL124 TL125TL126 TL127 TL103TL106 TL138 TL139 C108 1.5 pF C803 1000 pF R801

1300 Ohm

1200 Ohm

10 Ohm

2000 Ohm

4.7 pF TL134 R102

5100 Ohm

3.3 pF TL137 C106 3.9 pF C107 56 pF PORT PORT PORT S C B E 3 4 S3 C804 1000 pF C805 100000 pF b0 915 07 f h_B D i n_ 2- 2 8- 11 GATE DUT VDD RF_IN TL205 C205 56 pF TL204 C223 10000000 pF C207 0.2 pF TL229 TL230 TL231 TL232 TL233 TL236 TL237 TL217 TL218 TL219TL221 TL222 TL223 TL224 TL225 TL226 TL227 C209 5.6 pF C215 1 pF C210 1 pF TL209TL208TL210 1 2 TL211 3TL238 12 3TL239 TL240 3TL228 C204 10000 pF C213 100000000 pF C220 10000000 pF C211 10000000 pF C217 10000000 pF C212 10000000 pF C214 10000 pF TL207 TL234 C201 100000000 pF 3TL220 C222 10000000 pF C208 10000000 pF TL203 C216 1000000 pF C221 10000000 pF C206 10000000 pF C202 1.2 pF TL235 C203 3.9 pF TL201 PORT PORT PORT PORT TL214 TL215 TL213 TL206 TL212 TL216 4TL202 C219 10000000 pF C218 1000000 pF b 09 150 7f h _B D out _2- 2 8- 1 1 DRAIN DUT DRAIN DUT DRAIN DUT DRAIN DUT er = 3.48 H = 20 mil RO/RO4350 Reference circuit input schematic for ƒ = 960 MHz Reference circuit output schematic for ƒ = 960 MHz er = 3.48 H = 20 mil RO/RO4350

Data Sheet 8 of 13 Rev. 03.1, 2016-06-09 Reference Circuit (cont.) DUT PTFB091507FH Test Fixture Part No. LTN/PTFB091507FH PCB Rogers RO4350, 0.508 mm [0.020"] thick, 2 oz. copper, er = 3.48 Gerber Files Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower ELectrical Characteristics at 960 MHz Microstrip Characteristics Dimensions: mm Dimensions: mils TL102 0.004 l, 26.8 W W = 2.79, L = 0.76 W = 110, L = 30 TL103 0.007 l, 39.1 W W = 1.68, L = 1.27 W = 66, L = 50 TL114 0.003 l, 63.9 W W = 0.76, L = 0.51 W = 30, L = 20 TL115 0.026 l, 51.5 W W = 1.10, L = 4.88 W = 44, L = 192 TL116 0.036 l, 39.1 W W = 1.68, L = 6.74 W = 66, L = 266 TL117 0.042 l, 51.5 W W = 1.10, L = 8.00 W = 44, L = 315 TL118 0.007 l, 63.9 W W = 0.76, L = 1.27 W = 30, L = 50 TL119 0.035 l, 39.1 W W = 1.68, L = 6.49 W = 66, L = 256 TL120 0.015 l, 63.9 W W = 0.76, L = 2.92 W = 30, L = 115 TL121 0.100 l, 63.9 W W = 0.76, L = 19.05 W = 30, L = 750 TL122 0.005 l, 51.5 W W = 1.10, L = 1.02 W = 44, L = 40 TL123 0.008 l, 63.9 W W = 0.76, L = 1.52 W = 30, L = 60 TL124 0.006 l, 26.8 W W = 2.79, L = 1.04 W = 110, L = 41 TL125 0.102 l, 5.3 W W = 17.78, L = 17.55 W = 700, L = 691 TL126 0.040 l, 51.5 W W = 1.10, L = 7.57 W = 44, L = 298 TL127 0.004 l, 26.8 W W = 2.79, L = 0.76 W = 110, L = 30 TL134 0.007 l, 26.8 W W = 2.79, L = 1.19 W = 110, L = 47 TL136 0.008 l, 63.9 W W = 0.76, L = 1.52 W = 30, L = 60 TL138 0.002 l, 51.5 W W = 1.10, L = 0.33 W = 44, L = 13 W4 = 1.83 TL204 0.014 l, 51.5 W W = 1.10, L = 2.67 W = 44, L = 105 TL210 0.109 l, 5.7 W W = 16.51, L = 18.62 W = 650, L = 733 TL212 0.014 l, 20.9 W W = 3.81, L = 2.51 W = 150, L = 99 table continued on next page

Data Sheet 9 of 13 Rev. 03.1, 2016-06-09 PTFB091507FH TL216 0.041 l, 20.9 W W = 3.81, L = 7.29 W = 150, L = 287 TL217 0.008 l, 39.1 W W = 1.68, L = 1.52 W = 66, L = 60 TL218 0.016 l, 16.5 W W = 5.08, L = 2.90 W = 200, L = 114 TL219 0.011 l, 39.1 W W = 1.68, L = 2.03 W = 66, L = 80 TL221 0.037 l, 5.7 W W = 16.51, L = 6.38 W = 650, L = 251 TL222 0.016 l, 16.5 W W = 5.08, L = 2.89 W = 200, L = 114 W4 = 1.83 W4 = 72 TL230 0.006 l, 51.5 W W = 1.10, L = 1.14 W = 44, L = 45 TL231 0.060 l, 51.5 W W = 1.10, L = 11.3 W = 44, L = 445 TL232 0.027 l, 51.5 W W = 1.10, L = 5.08 W = 44, L = 200 TL233 0.006 l, 51.5 W W = 1.10, L = 1.12 W = 44, L = 44 TL234 0.041 l, 20.9 W W = 3.81, L = 7.29 W = 150, L = 287 TL236 0.014 l, 20.9 W W = 3.81, L = 2.51 W = 150, L = 99 TL237 0.052 l, 5.7 W W = 16.51, L = 8.89 W = 650, L = 350 Reference Circuit (cont.) Microstrip Characteristics Dimensions: mm Dimensions: mils

Data Sheet 10 of 13 Rev. 03.1, 2016-06-09 R803 RF_IN C208 C201 C214 C216 C215 C102 C804 R801 R805 C803 C805 C222 HHD 4V6 C221 C206 C205 C109 C202 C801 HHD 4V6 C105 C212 C106 C204 C211 C219 C108 R103 C101 C107 C210 C200 C203 C207 C218 C213 C217 C220 C110 R102C104 C103 RF_OUT PTFB091507_IN_01 R04350, .020 (62) PTFB091507_IN_01 R04350, .020 (62) VDD VDD C802 b 091507 f h _C D_ 3- 08 - 11 C223 Reference circuit board layout (not to scale) Component Description Suggested Supplier P/N or Comment C101 Chip capacitor, 33 pF ATC ATC100B330JW500XB C102 Chip capacitor, 4.71 µF Digi-Key 493-2372-2-ND C103 Capacitor, 10 nF ATC ATC200B103MW50XC C104, C107 Chip capacitor, 56 pF ATC ATC100B560JW500XB C105 Chip capacitor, 3.3 pF ATC ATC100B3R3CW500XB C106, C203 Chip capacitor, 3.9 pF ATC ATC100B3R9CW500XB C108 Chip capacitor, 1.5 pF ATC ATC100B1R5CW500XB C109 Capacitor, 10 nF ATC ATC200B103MW50XC C110 Chip capacitor, 4.7 pF ATC ATC100B4R7CW500XB C201, C213 Electrolytic cap., 100 uF , 50 V Digi-Key PCE4442TR-ND C202 Chip capacitor, 1.2 pF ATC ATC100B1R2CW500XB C204 Capacitor, 10 nF ATC ATC200B103MW50XC C205 Chip capacitor, 56 pF ATC ATC100B560JW500XB C206, C208, C211, Capacitor, 10 µF Digi-Key 587-1818-2-ND C212, C217, C220, C221, C222 C207 Chip capacitor, 0.2 pF ATC ATC100B0R2CW500XB C209 Chip capacitor, 5.6 pF ATC ATC100B5R6CW500XB C210 Chip capacitor, 1 pF ATC ATC100B1R0CW500XB table continued on next page Reference Circuit (cont.)

Data Sheet 11 of 13 Rev. 03.1, 2016-06-09 PTFB091507FH C214 Capacitor, 10 nF ATC ATC200B103MW50XC C215 Chip capacitor, 1 pF ATC ATC100B1R0CW500XB C216, C218 Chip capacitor, 1 µF Digi-Key 478-3993-2-ND C219, C223 Tantalum capacitor, 10 µF , 35 V Garrett Electronics 281M5002106K C801, C803, C804 Chip capacitor, 1 nF Digi-Key PCC1772CT -ND C802, 805 Chip capacitor, 100 nF Digi-Key PCC104BCT -ND R101 Resistor, 10 W Digi-Key P10ECT -ND R102 Resistor, 5.1 W Digi-Key P5.1KECT -ND R103 Resistor, 10 W Digi-Key P10ECT -ND R801 Resistor, 1.3k W Digi-Key P1.3KGCT -ND R802 Resistor, 1.2k W Digi-Key P1.2KGCT -ND R803, R805 Resistor, 10 W Digi-Key P10ECT -ND R804 Resistor, 2k W Digi-Key P2.0KECT -ND S1 Transistor Digi-Key BCP5616-ND S2 Potentiometer, 2k W Digi-Key 3224W-202ECT -ND S3 Voltage regulator Digi-Key LM78L05ACM-ND Reference Circuit (cont.) Component Description Suggested Supplier P/N or Comment See package outline specifications on next page

Data Sheet 12 of 13 Rev. 03.1, 2016-06-09 Package Outline Specifications Package H-34288-4/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [.005] unless specified otherwise. 4. Pins: D - drain; S - source; G - gate; V - VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD 6. Gold plating thickness: 0.25 micron [10 microinch] max. 23.114 [.910] 1.016 [.040] 1.575 [.062] (SPH) 22.352±.200 [.880±.008] 4.039+.254 -.127 [.159+.010 -.005 ] S LC LC D G CL 19.558±.510 [.770±.020] 2X 12.700 [.500] 45° X 2.032 [45° X .080] 2X 1.143 [.045] 9.398 [.370] 9.779 [.385] 22.860 [.900] 2X 5.080 [.200] 4.889±.510 [.192±.020] V V 2X 30° 4X R0.508+.381 -.127 [R.020+.015 -.005 ]

Data Sheet 13 of 13 Rev. 03.1, 2016-06-09 Edition 2016-06-09 Published by Infineon Technologies AG

81726 Munich, Germany

© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Y our Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFB091507FH V1 Page Subjects (major changes since last revision) Revision History: 2016-06-09 Data Sheet Previous Revision: 2011-03-14, Data sheet 2 updated ordering code to R0