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  • PDF pages: 14

Technical content

Features

  • Input and output internal matching
  • Typical CW performance, 960 MHz, 28 V - Output power at P1dB = 90 W - Efficiency = 65%
  • Typical two-carrier WCDMA performance,

960 MHz, 28 V

  • Average output power = 20 W - Linear Gain = 20.8 dB - Efficiency = 35% - Intermodulation distortion = –35 dBc
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS-compliant
  • Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 25 W average, ƒ = 960 MHz 3GPP signal, PAR = 10 dB @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 19 19.5 — dB Drain Efficiency hD 36 40 — % Adjacent Channel Power Ratio ACPR — –35 –31.5 dBc ficiency (%) Gain (dB) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz Gain 31 33 35 37 39 41 43 45 47 49 Eff G Output Power, Avg. (dBm) Efficiency b090901 gr 1

Data Sheet 2 of 14 Rev. 05.2, 2016-06-09 RF Characteristics (cont.) Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 70 W PEP , ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 19.5 — dB Drain Efficiency hD — 48 — % Intermodulation Distortion IMD — –30 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.123 — W Operating Gate Voltage VDS = 28 V, IDQ = 650 mA VGS — 3.8 — V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 85 W CW) RqJC 0.73 °C/W

Ordering Information

Type and Version Order Code Package Package Description Shipping PTFB090901EA V2 R0 PTFB090901EAV2R0XTMA1 H-36265-2 Ceramic open-cavity, bolt-down Tape & Reel, 50 pcs PTFB090901EA V2 R250 PTFB090901EAV2R250XTMA1 H-36265-2 Ceramic open-cavity, bolt-down Tape & Reel, 250 pcs PTFB090901FA V2 R0 PTFB090901FAV2R0XTMA1 H-37265-2 Ceramic open-cavity, earless Tape & Reel, 50 pcs PTFB090901FA V2 R250 PTFB090901FAV2R250XTMA1 H-37265-2 Ceramic open-cavity, earless Tape & Reel, 250 pcs

Data Sheet 3 of 14 Rev. 05.2, 2016-06-09 PTFB090901EA PTFB090901FA Typical Performance (data taken in a production test fixture) -35 -30 -25 -20 Imd (dBc) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz BW

960 MHz

940 MHz

920 MHz

-45 -40 31 33 35 37 39 41 43 45 47 Output Power, Avg. (dBm) -30 -25 -20 -15 ficiency (%) Bc), ACPR (dBc) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz IMD Low IMD Up Efficiency -45 -40 31 34 37 40 43 46 49 Eff IMD (dB Output Power, Avg. (dBm) b090901 gr 3 ACPR -30 -20 -10 Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, TM1 w/64 DPCH, 43% clipping, PAR = 7.5 dB, 3.84 MHz BW aion Distortion (dBc) Efficiency ACPR Low ACPR Up -60 -50 -40 32 35 38 41 44 47 50 Drain Output Power, Avg. (dBm) Intermodula b090901 gr 4 -30 -20 -10 Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, TM1 w/64 DPCH, 100% clipping, PAR = 10 dB, 3.84 MHz BW nnel Power Ratio (dB) Efficiency ACPU -60 -50 -40 32 35 38 41 44 47 50 Drain Output Power, Avg. (dBm) Adjacent Chan ACPL b090901 gr 5

Data Sheet 4 of 14 Rev. 05.2, 2016-06-09 -35 -25 iciency (%) MD (dBc) Two-tone Drive-up VDD = 28 V, IDQ = 650 mA, ƒ1 = 960 MHz, ƒ2 = 959 MHz 3rd Order IMD -55 -45 33 36 39 42 45 48 51 Effi IM Output Power, PEP (dBm) Efficiency b090901 gr 8 Typical Performance (cont.) iency (%) ain (dB) CW Power Sweep VDD = 30 V, IDQ = 650 mA, ƒ = 960 MHz Gain Effi i 34 38 42 46 50 Effici Ga Output Power, Avg. (dBm) Efficiency b090901 gr 7 -30 -20 -10 s (dB) / ACP (dBc) Single-carrier WCDMA Broadband VDD = 28 V, IDQ = 620 mA, POUT = 28 W, 3GPP WCDMA signal IML3 Efficiency B), Efficiency (%) . IRL -50 -40 810 855 900 945 990 1035 1080 Return Los Frequency (MHz) Gain Gain (dB b090901 gr 6 ciency (%) Gain (dB) Two-tone Drive-up VDD = 30 V, IDQ = 650 mA, ƒ1 = 960 MHz, ƒ2 = 959 MHz Gain Efficiency 33 36 39 42 45 48 51 Effic G Output Power, PEP (dBm) y b090901 gr 9

Data Sheet 5 of 14 Rev. 05.2, 2016-06-09 PTFB090901EA PTFB090901FA Typical Performance (cont.) fficiency (%) Gain (dB) CW Drive-up (over temperature) VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz Gain 34 36 38 40 42 44 46 48 50 Ef G Output Power, Avg. (dBm) +25ºC +85°C –30ºCEfficiency b090901 gr 12 wer Gain (dB) CW Drive-up VDD = 28 V, ƒ = 960 MHz IDQ = 980 mA IDQ = 650 mA 34 36 38 40 42 44 46 48 50 Pow Output Power, Avg. (dBm) IDQ = 330 mA b090901 gr 13 -40 -30 -20 rd Order (dBc) Two-tone Drive-up at selected frequencies VDD = 28 V, IDQ = 650 mA, 1 MHz tone spacing -60 -50 33 36 39 42 45 48 51 IMD 3r Output Power, PEP (dBm) -50 -40 -30 -20 D (dBc) Two-tone Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 650 mA, ƒ1 = 960 MHz, ƒ2 = 959 MHz 3rd Order 7th 5th -70 -60 33 36 39 42 45 48 51 IMD Output Power, PEP (dBm) b090901 gr 11

Data Sheet 6 of 14 Rev. 05.2, 2016-06-09 Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX See next page for reference circuit information Z Source Z Load G S D

Data Sheet 7 of 14 Rev. 05.2, 2016-06-09 PTFB090901EA PTFB090901FA 1 2 TL202TL203 TL238TL220 TL221 TL222TL223 TL224TL225TL226 TL227 TL228 TL229 TL230 DCVS DCVS C214 33 pF C211 2.5 pFC210 2.5 pF TL245 TL246 TL241 3TL242 12 TL243TL231 TL232 TL233 TL234 C215 10000000 pF TL237 C207 10000000 pFC204 1000000 pF C206 33 pF C205 10000000 pF C213 100000 pF TL236 1 2 TL206 C202 10000000 pF TL201 TL219TL244 C212 1000000 pF C208 33 pF C209 10000000 pF TL205 TL207 C201 0.9 pF TL240 TL204 TL218 TL235 1 2 TL217 TL213 TL214 TL208TL210TL211TL212 TL239 TL209 TL215 TL216 C216 10000000 pF C203 100000 pF PORT PORT RF_OUT b090901 ef a - v1_ B D- out _1 - 27 - 2012 DRAIN DUT TL101 TL102 TL103 TL104 TL105 TL106 TL107 TL108 TL109 TL110 TL111 TL112 C101 33 pF C804 100000 pF C805 100000 pF R804

10 Ohm

1000 Ohm

4.7 pF C104 4710000 pF C105 10000 pF R103 4.8 pF C107 4.8 pF TL122 C108 1.5 pF TL123 TL124 C109 8.2 pF TL125 TL126 TL127TL128 R802

1300 Ohm

1200 Ohm

S C B E In Out NC NC 2 3 4 56 7 C803 100000 pF C802 100000 pF C801 100000 pF R805 b090901 ef a - v1_ B D- i n_ 1- 27 - 2012 RF_IN GATE DUT Reference Circuit Reference circuit input schematic for ƒ = 960 MHz Reference circuit output schematic for ƒ = 960 MHz ε = 3.48 H = 20 mil RO/RO4350B1 r ε = 3.48 H = 20 mil RO/RO4350B1 r

Data Sheet 8 of 14 Rev. 05.2, 2016-06-09 Reference Circuit (cont.) Reference Circuit Assembly DUT PTFB090901EA or PTFB090901FA Reference Circuit Part No. LTN/PTFB090901EA (PTFB090901EA) LTN/PTFB090901FA (PTFB090901FA) PCB Rogers RO4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.48 Find Gerber files for this test fixture on the Infineon Web site at (http://www.infineon.com/rfpower) Electrical Characteristics at 960 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL102 0.0064 l, 69.6 W W = 0.65, L = 1.23 W = 25, L = 48 TL103 0.1238 l, 51.53 W W = 1.1, L = 23.38 W = 43, L = 921 TL104 0.1658 l, 69.6 W W = 0.65, L = 31.91 W = 25, L = 1256 TL105 0.0205 l, 69.6 W W = 0.65, L = 3.94 W = 25, L = 155 TL106 0.0014 l, 26.81 W W = 2.79, L = 0.25 W = 110, L = 10 TL107 0.0195 l, 7.47 W W = 12.37, L = 3.37 W = 487, L = 133 TL108 0.0014 l, 26.81 W W = 2.79, L = 0.25 W = 110, L = 10 TL109 0.0369 l, 51.53 W W = 1.1, L = 6.97 W = 43, L = 275 TL117, TL118, TL119 TL122 0.0294 l, 7.47 W W = 12.37, L = 5.08 W = 487, L = 200 TL124 0.0183 l, 51.53 W W = 1.1, L = 3.45 W = 43, L = 136 TL126, TL128 0.0055 l, 34.08 W W = 2.03, L = 1.02 W = 80, L = 40

Data Sheet 9 of 14 Rev. 05.2, 2016-06-09 PTFB090901EA PTFB090901FA Electrical Characteristics at 960 MHz (cont.) Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL201 0.055 l, 9.74 W W = 9.25, L = 9.65 W = 364, L = 380 TL202 0.010 l, 11.08 W W1 = 8, W2 = 8, W3 = 1.78 W1 = 315, W2 = 315, W3 = 70 TL203 0.081 l, 11.08 W W = 8, L = 14.2 W = 315, L = 559 TL219 TL207 0.007 l, 47.12 W W = 1.27, L = 1.4 W = 50, L = 55 TL209 0.030 l, 9.74 W W = 9.25, L = 5.21 W = 364, L = 205 TL210 0.075 l, 47.12 W W = 1.27, L = 14.05 W = 50, L = 553 TL211, TL232 0.002 l, 47.12 W W = 1.27, L = 0.38 W = 50, L = 15 TL212 0.060 l, 47.12 W W = 1.27, L = 11.2 W = 50, L = 441 TL215 0.055 l, 9.74 W W = 9.25, L = 9.65 W = 364, L = 380 TL216 0.007 l, 47.12 W W = 1.27, L = 1.4 W = 50, L = 55 TL221 0.006 l, 38.69 W W = 1.7, L = 1.14 W = 67, L = 45 TL222, TL223 0.061 l, 38.69 W W = 1.7, L = 11.3 W = 67, L = 445 TL224 0.030 l, 51.46 W W = 1.1, L = 5.69 W = 43, L = 224 TL225 0.012 l, 38.69 W W = 1.7, L = 2.22 W = 67, L = 87 TL226 0.073 l, 11.08 W W = 8, L = 12.7 W = 315, L = 500 TL231 0.060 l, 47.12 W W = 1.27, L = 11.2 W = 50, L = 441 TL233 0.075 l, 47.12 W W = 1.27, L = 14.05 W = 50, L = 553 TL234 0.030 l, 9.74 W W = 9.25, L = 5.21 W = 364, L = 205 TL237, TL239 0.082 l, 47.12 W W = 1.27, L = 15.35 W = 50, L = 604 TL245 0.017 l, 11.08 W W = 8, L = 2.92 W = 315, L = 115 Reference Circuit (cont.)

Data Sheet 10 of 14 Rev. 05.2, 2016-06-09 R803 RF_IN C212 C208 C213 C214 C203 C215 R804 R801 C802 C804 C805 C205 C206 C211 10 µF 10 µF 10 µF 10 µF RF_OUT R802 C101 C106 C107 C104 C109 C103 C108 C105 C803 C102 R805 R103 C207 R102 C801 R101 C204 C201C210 C216 C202 C209 b 090901 ef a - v1 _C D _1- 27 - 2012 VDD VDD PTFB090901EA PTFB090901_IN_01 R04350, .020 (62) PTFB090901_OUT_01 R04350, .020 (62) VDD Reference Circuit (cont.) Reference circuit assembly diagram (not to scale) Component ID Description Manufacturer P/N Input C101 Chip capacitor, 33 pF ATC 100B330FW500XB C102 Chip capacitor, 10000 pF ATC 200B103MW C103 Chip capacitor, 4.7 pF ATC 100B4R7BW500XB C104 Chip capacitor, 4.7 µF Nichicon F931C475MAA C105 Chip capacitor, 10000 pF ATC 200B103MW C106, C107 Chip capacitor, 4.8 pF ATC 100B4R8BW500XB C108 Chip capacitor, 1.5 pF ATC 100B1R5BW500XB C109 Chip capacitor, 8.2 pF ATC 100B8R2BW500XB C801, C804 Chip capacitor, 0.1 µF Panasonic Electronic Components ECJ-3VB1H104K C802, C803, C805 Chip capacitor, 1,000 pF Panasonic Electronic Components ECJ-1VB1H102K R801 Resistor, 1.0k W Panasonic Electronic Components ERJ-8GEYJ102V R802 Resistor, 1.3k W Panasonic Electronic Components ERJ-8GEYJ132V R803 Resistor, 1.2k W Panasonic Electronic Components ERJ-8GEYJ122V R804, R805 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V table cont. next page

Data Sheet 11 of 14 Rev. 05.2, 2016-06-09 PTFB090901EA PTFB090901FA Component ID Description Manufacturer P/N Input (cont.) S1 Transistor Fairchild Semiconductor BCP56 S2 Potentiometer, 2k W Bourns Inc. 3224W-1-202E S3 Voltage Regulator National Semiconductor LM7805 Output C201 Chip capacitor, 1 pF ATC 100B0R9BW500XB C202, C207, C215, Chip capacitor, 1.0 µF ATC 281M5002106K C216 C203, C213 Chip capacitor, 0.1 µF Panasonic Electronic Components ECJ-3VB1H104K C204, C212 Chip capacitor, 1 µF AVX Corporation 2225PC105KAT1A C205, C209 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C206, C208 Chip capacitor, 33 pF ATC 100B330JW500XB C210, C211 Chip capacitor, 3 pF ATC 100B2R5BW500XB C214 Chip capacitor, 33 pF ATC 100B330FW500XB See next page for package outline Reference Circuit (cont.)

Data Sheet 12 of 14 Rev. 05.2, 2016-06-09 Package Outline Specifications Package H-36265-2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [0.005] unless specified otherwise. 4. Pins: D – drain, S – source, G – gate. 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. 2X 7.11 [.280] 45° X 2.03 [.080] 3.05 [.120] CL CL FLANGE 9.78 [.385] 2X R1.52 [R.060] 4X R0.63 [R.025] MAX D S G 15.49±.51 [.610±.020] 4X R1.52 [R.060] LID 10.16±.25 [.400±.010] 2.66±.51 [.105±.020] ALL FOUR CORNERS 15.23 [.600] SPH 1.57 [.062] 20.31 [.800] 1.02 [.040] 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] h - 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

Data Sheet 13 of 14 Rev. 05.2, 2016-06-09 PTFB090901EA PTFB090901FA Package Outline Specifications (cont.) Package H-37265-2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain, G – gate, S – source. 6. Exposed metal plane on top of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. (Find the latest and most complete information about products and packaging at the Infineon Internet page (http://www.infineon.com/rfpower) D G 2X 7.11 [.280] LID 10.16±.25 [.400±.010] 15.49±.51 [.610±.020] FLANGE 10.16 [.400] 45° X 2.03 [.080] 2.66±.51 [.105±.020] 4X R0.63 [R.025] MAX ALL FOUR CORNERS SPH 1.57 [.062] 1.02 [.040] 10.16 [.400] S LC LC 3.61±.38 [.142±.015] 10.16±.25 [.400±.010] 2X 7.11 [.280] 45° X 2.03 [.080] 3.05 [.120] CL CL FLANGE 9.78 [.385] 2X R1.52 [R.060] 4X R0.63 [R.025] MAX D S G 15.49±.51 [.610±.020] 4X R1.52 [R.060] LID 10.16±.25 [.400±.010] 2.66±.51 [.105±.020] ALL FOUR CORNERS 15.23 [.600] SPH 1.57 [.062] 20.31 [.800] 1.02 [.040] 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] h - 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

85579 Neubiberg, Germany

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Revision History

Revision Date Data Sheet Page Subjects (major changes in comparison with previous revision) Data Sheet 14 of 14 Rev. 05.2, 2016-06-09 01 2010-09-02 Advance All New product PTFB090801FA, proposed only. 02 2010-11-05 Advance All Product number revised. 03 2011-09-08 Advance All Added eared package H-36265-2 04 2012-02-23 Production All Products released to production: specifications finalized, circuit informa- tion added. 05 2013-01-23 Production All Version 2 (V2) products will replace previous Version 1 (V1) products. No change to form, fit or function. 05.1 2014-07-08 Production 7 10-11 Correct label for output schematic. Identify component manufacturer and part number. 05.2 2016-06-09 Production 2 Updated ordering code to R0