PTFB072707FHV1R0

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Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

Features

• Broadband internal matching
• Wide video bandwidth
• Typical pulsed performance, 768 MHz, 28 V (10 μs pulse width,10% duty cycle, class AB) - Output power at P 1dB = 320 W - Gain = 17.5 dB - Efficiency = 60%
• Integrated ESD protection: Human Body Model (HBM) Class 2 minimum (per JESD22-A114)
• Low thermal resistance
• RoHS compliant
• Capable of handling 5:1 VSWR @ 28 V, 270 W (CW) output power 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 728 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency b072707fh-gr1

Data Sheet 2 of 10 Rev. 02.1, 2016-06-15 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 μA VDS = 63 V, VGS = 0 V IDSS — — 10.0 μA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 μA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 2.0 A VGS 2.5 3.8 4.5 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 240 W CW) RqJC 0.17 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PTFB072707FH V1 R0 PTFB072707FHV1R0XTMA1 H-34288G-4/2, ceramic open-cavity, earless flange Tape & reel, 50 pcs PTFB072707FH V1 R250 PTFB072707FHV1R250XTMA1 H-34288G-4/2, ceramic open-cavity, earless flange Tape & reel, 250 pcs

Data Sheet 3 of 10 Rev. 02.1, 2016-06-15 PTFB072707FH 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 748 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency b072707fh-gr2 0 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 768 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency b072707fh-gr3 -50 -40 -30 -20 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 728 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency b072707fh-gr4 0 -50 -40 -30 -20 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 748 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency b072707fh-gr5 Typical Performance (data taken in an Infineon production test fixture)

Data Sheet 4 of 10 Rev. 02.1, 2016-06-15 -50 -40 -30 -20 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 768 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency b072707fh-gr6 -55 -45 -35 -25 -15 32 36 40 44 48 52 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW

728 MHz IMD Low

728 MHz IMD Up

748 MHz IMD Low

748 MHz IMD Up

768 MHz IMD Low

768 MHz IMD Up

34 36 38 40 42 44 46 48 50 52 54 56 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 2.0 A, ƒ = 728 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V b072707fh-gr9 Typical Performance (cont.) 36 40 44 48 52 56 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 2.0 A Efficiency Gain b072707fh-gr8

728 MHz

748 MHz

768 MHz

Data Sheet 5 of 10 Rev. 02.1, 2016-06-15 PTFB072707FH 34 36 38 40 42 44 46 48 50 52 54 56 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 2.0 A, ƒ = 748 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V b072707fh-gr10 0 34 36 38 40 42 44 46 48 50 52 54 56 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 2.0 A, ƒ = 768 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V b072707fh-gr11 -20 -15 -10 600 650 700 750 800 850 900 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 2.0 A Gain IRL b072707fh-gr12 Typical Performance (cont.)

Data Sheet 6 of 10 Rev. 02.1, 2016-06-15 Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jX R jX 700 0.29 –0.64 0.80 –1.52 710 0.29 –0.57 0.81 –1.45 720 0.28 –0.51 0.82 –1.39 730 0.28 –0.44 0.83 –1.33 740 0.28 –0.38 0.84 –1.27 750 0.28 –0.32 0.85 –1.22 760 0.28 –0.25 0.86 –1.17 770 0.27 –0.19 0.88 –1.11 780 0.27 –0.13 0.89 –1.07 790 0.27 –0.06 0.89 –1.02 800 0.27 0.00 0.90 –0.97 Pulsed CW signal: 10 μsec, 10% duty cycle, 28 V, 2.0 A P1dB Class AB Max Output Power Max PAE Freq (MHz) Zs (W) Zl (W) Gain (dB) POUT (dBm) POUT (W) PAE (%) Zl (W) Gain (dB) POUT (dBm) POUT (W) PAE (%) Pulsed CW signal: 10 μsec, 10% duty cycle, 28 V, 2.0 A P3dB Class AB Max Output Power Max PAE Freq (MHz) Zs (W) Zl (W) Gain (dB) POUT (dBm) POUT (W) PAE (%) Zl (W) Gain (dB) POUT (dBm) POUT (W) PAE (%) Z Source Z Load G S D Load Pull Performance

Data Sheet 7 of 10 Rev. 02.1, 2016-06-15 PTFB072707FH Reference Circuit, tuned for 728 to 768 MHz DUT PTFB072707FH Test Fixture Part No. LTN/PTFB072707FH V1 PCB 0.508 mm [0.020"] thick, er = 3.66 Rogers 4350, 1 oz. copper Find Gerber files for this test fixture on the Infineon Web site at (http://www.infineon.com/rfpower) Components Information Component Description Manufacturer P/N Input C101 Chip capacitor, 1.7 pF ATC ATC100B1R7CW500XB C102, C105 Chip capacitor, 5.6 pF ATC ATC100B5R6BW500XB C103 Chip capacitor, 8.2 pF ATC ATC100B8R2CW500XB C104, C106, C107, C108 Chip capacitor, 12 pF ATC ATC100B120JW500XB C109 Chip capacitor, 33 pF ATC ATC100B330JW C110, C115 Chip capacitor, 56 pF ATC ATC100B560JT C111 Capacitor, 20000 pF ATC ATC200B203MW C112 Capacitor, 10000 pF ATC ATC200B103MW C113 Chip capacitor, 4.7 pF ATC ATC100B4R7CT C114 Chip capacitor, 4.7 μF Nichicon F931C475MAA table cont. next page Circuit assembly diagram (not to scale) RF_OUT PTFB072707_OUT_01 RO4350, .020 (62) C216 C211 C215 C213 C223 C214 C204C206 C205 C212 C203C219 C220 C207 C209 C210 C202 C221 C201 C218 C217 10 μF 10 μF C222 VDD VDD (62)RO4350, .020PTFB072707_IN_01 C802 C805R801 C801 C804 R802 C803 R804 R805 R803 C107 C115 C103 C113 C111 C109 C114 C110 C101 C105 R102 C104 C108 C106 C102 R103 R101 C112 VDD S3 S1 RF_IN C208 b 0 7 2 7 0 7 f h _ c d _ r 2 _ 2 0 1 5 - 0 9 - 2 2 PTFB0727077FHPTFB072707FH

Data Sheet 8 of 10 Rev. 02.1, 2016-06-15 Components Information (cont.) Component Description Manufacturer P/N Input (cont.) C801, C804 Chip capacitor, 0.1 μF Panasonic Electronic Components ECJ-3VB1H104K C802, C803, C805 Chip capacitor, 1000 pF Panasonic ECJ-1VB1H102K R101, R103, R803 Resistor, 10 ohm Panasonic ERJ-8GEYJ100V R102 Resistor, 5.1k ohm Panasonic Electronic Components ERJ-8GEYJ512V R801 Resistor, 100 ohm Panasonic Electronic Components ERJ-8GEYJ101V R802 Resistor, 1000 ohm Panasonic Electronic Components ERJ-8GEYJ102V R804 Resistor, 1.3k ohm Panasonic Electronic Components ERJ-3GEYJ132V R805 Resistor, 1.2k ohm Panasonic Electronic Components ERJ-3GEYJ122V S1 Transistor Fairchild Semiconductor BCP56 S2 Potentiometer, 2k ohm Bourns Inc. 3224W-1-202E S3 Voltage regulator Fairchild Semiconductor LM7805 Output C201 Chip capacitor, 1 pF ATC ATC100B1R0CW500XB C202, C203, C206, C207, C209, C210, C220, C221 Capacitor, 10 μF Taiyo Yuden UMK325C7106MM-T C204, C219 Chip capacitor, 1 μF AVX Corporation 2225PC105KAT1A C205, C211 Chip capacitor, 10 μF Garrett 281M5002106k C208, C222 Capacitor, 100 μF Panasonic EEE-FP1V101AP C212 Chip capacitor, 56 pF ATC ATC100B560JT C213, C214 Chip capacitor, 3.6 pF ATC ATC100B3R6CW C215, C216 Chip capacitor, 1.3 pF ATC ATC100B1R3CW C217, C218 Chip capacitor, 2.2 pF ATC ATC100B2R2CW C223 Chip capacitor, 3 pF ATC ATC100B3R0CW500XB Reference Circuit (cont.)

Data Sheet 9 of 10 Rev. 02.1, 2016-06-15 PTFB072707FH Package Outline Specifications Package H-34288G-4/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm; alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D - drain; G - gate; S (flange) - source; V - VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. 2X 2.29 [.090] 1.98 [.078] 21.72 [.855] 30.0° 4X R0.51+.38 -.13 [R.020+.015 -.005 ] 2X 17.75 [.699] CL CL CL 45° x .64 [.025] G D VV 16.76±0.51 [.660±.020]9.78 [.385] 4X 3.49±0.51 [.138±.020] CL 9.40 [.370] D 4.04+0.25 -0.13 [.159+.010 -.005 ] SPH 1.57 [.062] 1.02 [.040] 23.11 [.910] S 22.35±0.20 [.880±.008]

85579 Neubiberg, Germany

© 2010 – 2016 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 10 of 10 Rev. 02.1, 2016-06-15 PTFB072707FH V1

Revision History

Revision Date Data Sheet Page Subjects (major changes at each revision) 01 2010-12-21 Advance all Proposed specifications for new product development. 02 2014-01-08 Data Sheet all Data Sheet for released product. 02.1 2016-06-15 Data Sheet 1, 2, 7, 9 Update package information to new configuration (same name), update ordering information