PTFB072707FH CREE | Alldatasheet

Document overview

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Technical content

Features

  • Broadband internal matching
  • Wide video bandwidth
  • Typical pulsed performance, 768 MHz, 28 V (10 μs pulse width,10% duty cycle, class AB) - Output power at P1dB = 320 W - Gain = 17.5 dB - Efficiency = 60%
  • Integrated ESD protection: Human Body Model (HBM) Class 2 minimum (per JESD22-A114)
  • Low thermal resistance
  • RoHS compliant
  • Capable of handling 5:1 VSWR @ 28 V, 270 W (CW) output power 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 728 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency b072707fh-gr1 PTFB072707FH

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-13 2PTFB072707FH DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 μA VDS = 63 V, VGS = 0 V IDSS — — 10.0 μA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 μA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 28 V, IDQ = 2.0 A VGS 2.5 3.8 4.5 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 240 W CW) RqJC 0.17 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PTFB072707FH V1 R0 PTFB072707FH-V1-R0 H-34288G-4/2, ceramic open-cavity, earless flange Tape & reel, 50 pcs PTFB072707FH V1 R250 PTFB072707FH-V1-R250 H-34288G-4/2, ceramic open-cavity, earless flange Tape & reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-13 3PTFB072707FH 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 748 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency b072707fh-gr2 0 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 768 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain Efficiency b072707fh-gr3 -50 -40 -30 -20 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 728 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency b072707fh-gr4 0 -50 -40 -30 -20 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 748 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency b072707fh-gr5 Typical Performance (data taken in an Wolfspeed production test fixture)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-13 4PTFB072707FH -50 -40 -30 -20 34 36 38 40 42 44 46 48 50 52 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 A, ƒ = 768 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Efficiency b072707fh-gr6 -55 -45 -35 -25 -15 32 36 40 44 48 52 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2.0 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW

728 MHz IMD Low

728 MHz IMD Up

748 MHz IMD Low

748 MHz IMD Up

768 MHz IMD Low

768 MHz IMD Up

34 36 38 40 42 44 46 48 50 52 54 56 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 2.0 A, ƒ = 728 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V b072707fh-gr9 Typical Performance (cont.) 36 40 44 48 52 56 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 2.0 A Efficiency Gain b072707fh-gr8

728 MHz

748 MHz

768 MHz

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-13 5PTFB072707FH 34 36 38 40 42 44 46 48 50 52 54 56 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 2.0 A, ƒ = 748 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V b072707fh-gr10 0 34 36 38 40 42 44 46 48 50 52 54 56 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 2.0 A, ƒ = 768 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V b072707fh-gr11 -20 -15 -10 600 650 700 750 800 850 900 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 2.0 A Gain IRL b072707fh-gr12 Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-13 6PTFB072707FH Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jX R jX 700 0.29 –0.64 0.80 –1.52 710 0.29 –0.57 0.81 –1.45 720 0.28 –0.51 0.82 –1.39 730 0.28 –0.44 0.83 –1.33 740 0.28 –0.38 0.84 –1.27 750 0.28 –0.32 0.85 –1.22 760 0.28 –0.25 0.86 –1.17 770 0.27 –0.19 0.88 –1.11 780 0.27 –0.13 0.89 –1.07 790 0.27 –0.06 0.89 –1.02 800 0.27 0.00 0.90 –0.97 Pulsed CW signal: 10 μsec, 10% duty cycle, 28 V, 2.0 A P1dB Class AB Max Output Power Max PAE Freq (MHz) Zs (W) Zl (W) Gain (dB) POUT (dBm) POUT (W) PAE (%) Zl (W) Gain (dB) POUT (dBm) POUT (W) PAE (%) Pulsed CW signal: 10 μsec, 10% duty cycle, 28 V, 2.0 A P3dB Class AB Max Output Power Max PAE Freq (MHz) Zs (W) Zl (W) Gain (dB) POUT (dBm) POUT (W) PAE (%) Zl (W) Gain (dB) POUT (dBm) POUT (W) PAE (%) Z Source Z Load G S D Load Pull Performance

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-13 7PTFB072707FH Reference Circuit, tuned for 728 to 768 MHz DUT PTFB072707FH Test Fixture Part No. LTN/PTFB072707FH V1 PCB 0.508 mm [0.020"] thick, er = 3.66 Rogers 4350, 1 oz. copper Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Components Information Component Description Manufacturer P/N Input C101 Chip capacitor, 1.7 pF ATC ATC100B1R7CW500XB C102, C105 Chip capacitor, 5.6 pF ATC ATC100B5R6BW500XB C103 Chip capacitor, 8.2 pF ATC ATC100B8R2CW500XB C104, C106, C107, C108 Chip capacitor, 12 pF ATC ATC100B120JW500XB C109 Chip capacitor, 33 pF ATC ATC100B330JW C110, C115 Chip capacitor, 56 pF ATC ATC100B560JT C111 Capacitor, 20000 pF ATC ATC200B203MW C112 Capacitor, 10000 pF ATC ATC200B103MW C113 Chip capacitor, 4.7 pF ATC ATC100B4R7CT C114 Chip capacitor, 4.7 μF Nichicon F931C475MAA table cont. next page Circuit assembly diagram (not to scale) RF_OUT PTFB072707FH Customer Circuit PTFB072707_OUT_01A RO4350, .020 (62) C216 C211 C215 C213 C223 C214 C204C206 C205 C212 C203C219 C220 C207 C209 C210 C202 C221 C201 C218 C217 10 µF 10 µF C222 VDD VDD (62) RO4350, .020PTFB072707_IN_01A C802 C805R801 C801 C804 R802 C803 R804 R805 R803 C107 C115 C103 C113 C111 C109 C114 C110 C101 C105 R102 C104 C108 C106 C102 R103 R101 C112 VDD S3 S1 RF_IN C208 b 0 72 70 7 f h _ c d _ r 2 _ WS _ 0 6 - 1 2 - 2 01 8 V66100-G9309-D344-01-7631 ASSEMBLY TEST CIRCUIT, RF POWER TRANSISTOR PTFB072707FH V66100-G9309-D344-01-7631

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-13 8PTFB072707FH Components Information (cont.) Component Description Manufacturer P/N Input (cont.) C801, C804 Chip capacitor, 0.1 μF Panasonic Electronic Components ECJ-3VB1H104K C802, C803, C805 Chip capacitor, 1000 pF Panasonic ECJ-1VB1H102K R101, R103, R803 Resistor, 10 ohm Panasonic ERJ-8GEYJ100V R102 Resistor, 5.1k ohm Panasonic Electronic Components ERJ-8GEYJ512V R801 Resistor, 100 ohm Panasonic Electronic Components ERJ-8GEYJ101V R802 Resistor, 1000 ohm Panasonic Electronic Components ERJ-8GEYJ102V R804 Resistor, 1.3k ohm Panasonic Electronic Components ERJ-3GEYJ132V R805 Resistor, 1.2k ohm Panasonic Electronic Components ERJ-3GEYJ122V S1 Transistor Fairchild Semiconductor BCP56 S2 Potentiometer, 2k ohm Bourns Inc. 3224W-1-202E S3 Voltage regulator Fairchild Semiconductor LM7805 Output C201 Chip capacitor, 1 pF ATC ATC100B1R0CW500XB C202, C203, C206, C207, C209, C210, C220, C221 Capacitor, 10 μF Taiyo Yuden UMK325C7106MM-T C204, C219 Chip capacitor, 1 μF AVX Corporation 2225PC105KAT1A C205, C211 Chip capacitor, 10 μF Garrett 281M5002106k C208, C222 Capacitor, 100 μF Panasonic EEE-FP1V101AP C212 Chip capacitor, 56 pF ATC ATC100B560JT C213, C214 Chip capacitor, 3.6 pF ATC ATC100B3R6CW C215, C216 Chip capacitor, 1.3 pF ATC ATC100B1R3CW C217, C218 Chip capacitor, 2.2 pF ATC ATC100B2R2CW C223 Chip capacitor, 3 pF ATC ATC100B3R0CW500XB Reference Circuit (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-13 9PTFB072707FH Package Outline Specifications Package H-34288G-4/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm; alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D - drain; G - gate; S (flange) - source; V - VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. 2X 2.29 [.090] 1.98 [.078] 21.72 [.855] 30.0° 4X R0.51+.38 -.13 [R.020+.015 -.005 ] 2X 17.75 [.699] CL CL CL 45° x .64 [.025] G D VV 16.76±0.51 [.660±.020]9.78 [.385] 4X 3.49±0.51 [.138±.020] CL 9.40 [.370] D 4.04+0.25 -0.13 [.159+.010 -.005 ] SPH 1.57 [.062] 1.02 [.040] 23.11 [.910] S 22.35±0.20 [.880±.008]

www.wolfspeed.comRev. 03, 2018-06-13 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTFB072707FH

Revision History

Revision Date Data Sheet Type Page Subjects (major changes at each revision) 01 2010-12-21 Advance All Proposed specifications for new product development. 02 2014-01-08 Data Sheet All Data Sheet for released product. 02.1 2016-06-15 Data Sheet 1, 2, 7, 9 Update package information to new configuration (same name), update ordering information 03 2018-06-13 Production All Converted to Wolfspeed Data Sheet