PTFA261702E INFINEON | Alldatasheet

Document overview

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  • PDF pages: 10

Technical content

Features

  • Thermally-enhanced packages, Pb-free and RoHS-compliant
  • Broadband internal matching
  • Typical WiMAX performance at 2650 MHz, 28 V - Average output power = 32 W - Linear gain = 15 dB - Efficiency = 20% - Error vector magnitude = –29 dB
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift
  • Capable of handling 10:1 VSWR @ 28 V,

170 W (CW) output power

*See Infineon distributor for future availability.

Data Sheet 2 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1800 mA, POUT = 170 W PEP, ƒ = 2650 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 14 15 — dB Drain Efficiency η D 31 33 — % Intermodulation Distortion IMD — –30 –27 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.08 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1800 mA VGS — 2.5 — V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 643 W Above 25°C derate by 3.68 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 170 W CW) Rθ JC 0.272 °C/W

Ordering Information

Type and Version Package Type Package Description Marking PTFA261702E V1 H-30275-4 Thermally-enhanced slotted flange, push-pull PTFA261702E *See Infineon distributor for future availability.

Data Sheet 3 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution WiMAX Performance VDD = 28 V, IDQ = 1800 mA, ƒ = 2650 MHz, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -45 -40 -35 -30 -25 -20 -15 20 25 30 35 40 45 50 Output Power (dBm) EVM (dB) TCASE = 25°C TCASE = 90°C WiMAX Performance VDD = 28 V, ƒ = 2650 MHz (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -50 -45 -40 -35 -30 -25 -20 15 20 25 30 35 40 45 50 Output Power (dBm) EVM (dB) IDQ = 2000 mA IDQ = 1800 mA IDQ = 1600 mA Typical Performance (data taken in a production test fixture) Gain vs. Output Power VDD = 28 V, ƒ = 2650 MHz 14.0 14.5 15.0 15.5 16.0 16.5 41 43 45 47 49 51 53 Output Power (dBm) Power Gain (dB) IDQ = 1800 mA IDQ = 1400 mA IDQ = 2200 mA Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 1800 mA ƒ 1 = 2619 MHz, ƒ 2 = 2620 MHz; ƒ 1 = 2679 MHz, ƒ 2 = 2680 MHz -70 -60 -50 -40 -30 -20 38 40 42 44 46 48 50 Output Power, Avg. (dBm) IMD (dBc) 3rd Order 7th5th ƒ = 2680 MHz ƒ = 2620 MHz

Data Sheet 4 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution IS-95 CDMA Performance VDD = 28 V, IDQ = 1800 mA, ƒ = 2680 MHz, PAR = 9.8 dB @ 0.01 probability on CCDF 35 37 39 41 43 45 47 Output Power (dBm), Avg. Drain Efficiency (%) -80 -70 -60 -50 -40 -30 -20 Adj. Ch. Power Ratio (dBc) Adj 885 kHz Alt1 1.25 MHz Efficiency IS-95 CDMA Performance VDD = 28 V, IDQ = 1800 mA, ƒ = 2680 MHz, PAR = 9.8 dB @ 0.01 probability on CCDF 35 37 39 41 43 45 47 Output Power (dBm), Avg. Drain Efficiency (%) -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 Adj. Ch. Power Ratio (dBc) Efficiency Alt1 1.25 M\`Hz Adj 885 kHz TCASE = 25°C TCASE = 90°C Typical Performance (cont.) Output Power vs. Supply Voltage IDQ = 1800 mA, ƒ = 2680 MHz 51.0 51.5 52.0 52.5 53.0 23 25 27 29 31 33 Supply Voltage (V) Output Power (dBm) CW Sweep in a Broadband Test Fixture VDD = 28 V, IDQ = 1800 mA, POUT = 50 dBm 2600 2620 2640 2660 2680 2700 Frequency (MHz) Efficiency (%) Gain (dB) Efficiency Gain

Data Sheet 5 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Frequency Z Source W Z Load W MHz R jX R jX Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 Case Temperature (°C) Normalized Bias Voltage (V) 0.37 A 1.11 A 1.85 A 2.78 A 5.56 A 8.34 A Typical Performance (cont.) Power Sweep, CW Conditions VDD = 28 V, IDQ = 1800 mA, ƒ = 2680 MHz 10 50 90 130 170 210 Output Power (W) Gain (dB) Drain Efficiency (%) Gain Efficiency TCASE = 25°C TCASE = 90°C Z Source Z Load G D G S D 0.1 0.3 0.2 0.4 0.2

2700 MHz

2600 MHz

Broadband Circuit Impedance Z0 = 50 Ω

Data Sheet 6 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution 2K V 2K V 0.001µF 0.001µF BCP56 1.3KV 1.2KV LM7805 0.001µF VDD QQ1 10V VDD l16 l30 l31 l32 1K V 0.1µF 10µF 35V C10 4.5pF DUT RF_IN C15 3.3pF C17 1µF C25 0.3pF C26 4.5pF VGG RF_OUT l43C27 4.5pF 3.3pF C11 4.5pF C14 3.3pF C18 2.2µF l25 l38 l33 l44 l15 l7l3l2 l18 l21 l14 l27 l40 C16 2000pF C13 10µF 10µF 0.1µF l10 1K V 10 V 10 V 0.1µF C19 10µF 50V l22l23 C12 0.1µF l5l4 l13l12l11 l19l20 l34 l35 l17 l24 l37 l26 l39 l28 l41 l29 l42 l36 VDD C20 3.3pF C22 1µF C23 2.2µF C21 2000pF C24 10µF 50V l45 l46 l47 Reference circuit block diagram for ƒ = 2680 MHz Reference Circuit

Data Sheet 7 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information DUT PTFA261702E LDMOS Transistor PCB 0.76 mm [.030"] thick, e r = 3.48 Rogers RO4350 1 oz. copper Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) Microstrip at 2680 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)

Data Sheet 8 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution a26170e_cd_2-15-08 RF_IN RO4350_.030 A261702_01 RF_OUT QQ1 C3 C1 C12 C13 C14 C11 C10 C15 C18 C19 C15 C17 C16 C25 C26 C27 C20 C24 C21 C22 C23 VDD VDD Reference circuit assembly diagram (not to scale)* Reference Circuit (cont.) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND C5, C6, C7, C12 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C8, C13 Capacitor, 10 µF Digi-Key 490-1819-2-ND C9, C14, C15, C20 Ceramic capacitor, 3.3 pF ATC 100B 3R3 C10, C11, C26, C27 Ceramic capacitor, 4.5 pF ATC 100B 4R5 C16, C21 Capacitor, 2000 pF ATC 100B 203JW C17, C22 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND C18, C23 Capacitor, 2.2 µF Digi-Key 445-1447-2-ND C19, C24 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400 C25 Ceramic capacitor, 0.3 pF ATC 100B 0R3 Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage regulator National Semiconductor LM7805 R1 Chip resistor 1.2K ohms Digi-Key P1.2KGCT-ND R2 Chip resistor 1.3K ohms Digi-Key P1.3KGCT-ND R3 Chip resistor 2K ohms Digi-Key P2KECT-ND R4 Potentiometer 2K ohms Digi-Key 3224W-202ETR-ND R5, R8, R9 Chip resistor 10 ohms Digi-Key P10ECT-ND R6, R7 Chip resistor 1K ohms Digi-Key P1KECT-ND *Gerber files for this circuit available on request. VDD

Data Sheet 9 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Package Outline Specifications Package H-30275-4 Diagram Notes—unless otherwise specified: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products CL S 41.15 [1.620] 1.63 [.064] 2.18 [.086] SPH 31.24±0.28 [1.230±.011] 35.56 [1.400] D G D 16.61±0.51 [.654±.020] 2X R 1.59 [.063] 2X 3.18 [.125] 9.40 [.370 ] 0.038 [.0015] -A- 2X 45°±5° X 1.19 [.047] 4.55±0.38 [.179±.015] Flange 10.16 [.400] 4X 3.23±0.25 [.127±.010] G [.360 ]+.004 –.006 LID 9.14 +0.10 –0.15 4X 11.68 [.460] 13.72 [.540] CL CL +0.10 –0.15 +.004 –.006 CL

Data Sheet 10 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Revision History: 2009-02-20 Data Sheet Previous Version: none Page Subjects (major changes since last revision)

8 Fixed typing error

4-10 to 14 Refine existing frames, new frames for final page. Misc updates. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-02-20 Published by Infineon Technologies AG

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com/rfpower ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.