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- PDF pages: 21
Technical content
Features
Typical two-carrier WCDMA performance at
2140 MHz, 8 dB PAR
- P OUT = 33 dBm Avg - ACPR = –45.5 dBc Typical two-carrier WCDMA performance at
877 MHz, 8 dB PAR
- P OUT = 33 dBm Avg - ACPR = –44.5 dBc Typical CW performance, 2140 MHz, 28 V - P OUT = 41.6 dBm - Effi ciency = 53.5% - Gain = 15.5 dB Typical CW performance, 877 MHz, 28 V - P OUT = 41.8 dBm - Effi ciency = 60% - Gain = 19.9 dB Capable of handling 10:1 VSWR @ 28 V, 12 W (CW) output power Integrated ESD protection Excellent thermal stability Pb-free and RoHS compliant -50 -45 -40 -35 -30 -25 -20 -15 -10 33 34 35 36 37 38 39 40 41 42 Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-toneDrive-up VDD =2 8V ,I DQ = 150 mA, ƒ1 = 876.95 MHz, ƒ 2 = 877.05 MHz Efficiency IMD3
Data Sheet 2 of 21 Rev. 10, 2015-10-23 RF Characteristics (cont.) Two-tone Measurements (not subject to production test – verifi ed by design / characterization in Infi neon test fi xture) VDD = 28 V, IDQ = 150 mA, POUT = 9.3 W PEP , ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain G ps — 16.2 — dB Drain Efficiency D — 37 — % Intermodulation Distortion IMD — –29.4 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 µA V (BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 1.0 µA On-State Resistance V GS = 10 V, VDS = 0.1 A R DS(on) — 2.01 — Operating Gate Voltage V DS = 28 V, IDQ = 150 mA V GS 2.0 2.5 3.0 V Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage V GS –0.5 to +12 V Junction Temperature T J 175 °C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 12 W CW) RJC 3.4 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit
3 IPC/JEDEC J-STD-020 260 °C
Ordering Information
Type and Version Order Code Package and Description Shipping PTFA220121M V4 R1K PTFA220121MV4R1KV4XUMA1 PG-SON-10, Molded plastic, SMD Tape & Reel, 1,000 pcs
Data Sheet 3 of 21 Rev. 10, 2015-10-23 PTFA220121M 29 31 33 35 37 39 41 Drain Efficiency (%) Gain (dB) Output Power( d B m ) Two-carrier WCDMA 3GPP VDD =2 8V ,I DQ = 150 mA, ƒ = 877 MHz 3GPP WCDMA, P/AR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz Gain Efficiency -50 -45 -40 -35 -30 -25 -20 -15 -10 32 33 34 35 36 37 38 39 40 41 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD =2 8V ,I DQ = 150 mA, ƒ = 877 MHz 3GPP WCDMA, P/AR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz Efficiency IMD Up IMD Low ACPR -60 -50 -40 -30 -20 33 34 35 36 37 38 39 40 41 42 IMD (dBc) Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD =2 8V ,I DQ =1 5 0m A , ƒ1 =8 7 6 . 9 5M H z ,ƒ2 =8 7 7 . 0 5M H z 3rd Order 7th 5th 33 34 35 36 37 38 39 40 41 42 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD =2 8V ,I DQ = 150 mA, ƒ1 = 876.95 MHz, ƒ 2 =8 7 7 . 0 5M H z Efficiency Gain Typical Performance, 877 MHz (data taken in a production test fixture)
Data Sheet 4 of 21 Rev. 10, 2015-10-23 -25 -20 -15 -10 727 827 927 1027 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD =2 8V ,I DQ =1 5 0m A IRL Gain Typical Performance, 877 MHz (cont.)
Data Sheet 5 of 21 Rev. 10, 2015-10-23 PTFA220121M 0.1 0.3 0.5 0.2 0.4 0.1 0.2 0.1 AVELENGTHS TOW ARD GENERATOR ---> VELENGTHS TOW ARD LOAD - 0.0 Z Source Z Load
2700 MHz
720 MHz
Z0 = 50 Z Source Z Load G S D Broadband Circuit Impedance Frequency Z Source Z Load MHz R jX R jX 720 1.1 7.7 12.0 4.8 820 1.0 6.4 12.4 4.0 869 1.3 5.0 10.8 5.9 894 1.2 3.6 9.3 6.7 920 1.4 3.5 9.1 6.7 940 1.5 3.3 9.1 6.9 960 1.4 2.8 8.9 6.3 1675 1.6 0.3 5.0 5.3 1805 2.0 0.3 4.7 3.2 1880 2.0 0.3 4.7 2.9 1930 2.2 –0.9 4.2 3.0 1990 2.6 –2.0 3.8 1.8 2110 2.5 –3.1 3.8 1.8 2170 2.0 –2.6 3.6 1.9 2300 1.7 –1.7 3.3 1.6 2400 2.2 –2.5 3.2 0.5 2500 2.5 –4.5 3.0 0.5 2600 2.4 –4.1 2.7 1.2 2700 1.9 –3.1 2.3 1.4
Data Sheet 6 of 21 Rev. 10, 2015-10-23 Reference Circuit, 877 MHz Reference circuit input schematic for ƒ = 877 MHz Reference circuit output schematic for ƒ = 877 MHz TL105 TL109 R101 1. 3 Ohm DCVS TL107 TL101 TL110 TL111 TL112 TL113 TL114 C103 10 pF C104 16 pF C102 20 pF C101 68 pF 22 nH C802 1000 pFR801
1200 Ohm
1300 Ohm
2000 Ohm
10 Ohm
S C B E 4 S4 In Out NC NC 4 567 TL108 TL104 Er=3.48 H=20 mil RO/RO4350B1 RF_IN GATE DUT VDD 28 V
510 Ohm
3.6 pF TL207 TL212 TL214 TL215TL216 TL217 TL218 TL226 TL206 TL205TL204TL209 TL203 TL202 TL201 C202 68 pF C201 2200000 pF C204 68 pF C205 8.2 pF TL219 TL220 TL221 TL222
0000 Ohm L2
2.7 nH TL223 DRAIN DUT RF_OUT VDD 28 V
Data Sheet 7 of 21 Rev. 10, 2015-10-23 PTFA220121M Reference Circuit, 877 MHz (cont.)
Description
PCB 0.508 mm [.020"] thick, r = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 877 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101, TL106 W = 0.000, L = 0.000 W = 0, L = 0 TL102 0.050 , 51.98 W = 1.087, L = 10.262 W = 43, L = 404 TL107 0.004 , 51.98 W = 1.087, L = 0.813 W = 43, L = 32 TL108 W = 1.524 W = 60 TL109 0.007 , 54.17 W = 1.016, L = 1.524 W = 40, L = 60 TL110 0.025 , 41.75 W = 1.524, L = 5.080 W = 60, L = 200 TL111 0.009 , 25.04 W = 3.048, L = 1.778 W = 120, L = 70 TL112 0.002 , 41.75 W = 1.524, L = 0.508 W = 60, L = 20 TL113 0.006 , 41.75 W = 1.524, L = 1.270 W = 60, L = 50 TL114 1W1 = 3.048, W2 = 0.762, W3 = 3.048, W1 = 120, W2 = 30, W3 = 120, W4 = 0.762 W4 = 30 TL115 0.016 , 51.98 W = 1.087, L = 3.264 W = 43, L = 129 TL116 0.044 , 51.98 W = 1.087, L = 9.093 W = 43, L = 358 table continued on page 8
Data Sheet 8 of 21 Rev. 10, 2015-10-23 Reference Circuit, 877 MHz (cont.) Electrical Characteristics at 877 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL201 W1 = 1.270, W2 = 5.283, Offset = –2.007 W1 = 50, W2 = 208, Offset = –79 TL202 W1 = 5.283, W2 = 5.283, Offset = 0.000 W1 = 208, W2 = 208, Offset = 0 TL203 0.016 , 15.92 W1 = 5.283, W2 = 5.283, W3 = 3.023 W1 = 208, W2 = 208, W3 = 119 TL204 0.007 , 4.80 W = 19.850, L = 1.270 W = 782, L = 50 TL205 W1 = 19.812, W2 = 19.812, Offset = 7.264 W1 = 780, W2 = 780, Offset = 286 TL206 0.066 , 47.12 W W = 1.270, L = 13.467 W = 50, L = 530 TL207 0.002 , 41.75 W = 1.524, L = 0.508 W = 60, L = 20 TL209 W1 = 1.270, W2 = 1.270, Offset = 10.566 W1 = 50, W2 = 50, Offset = 416 TL211 0.089 , 51.98 W = 1.087, L = 18.313 W = 43, L = 721 TL212 0.007 , 41.75 W = 1.524, L = 1.524 W = 60, L = 60 TL215 W1 = 1.087, W2 = 3.048 W1 = 43, W2 = 120 TL216 0.009 , 25.04 W = 3.048, L = 1.778 W = 120, L = 70 TL217 0.006 , 63.89 W = 0.762, L = 1.270 W = 30, L = 50 TL218 0.002 , 51.98 W = 1.087, L = 0.356 W = 43, L = 14 TL219 0.040 , 41.75 W = 1.524, L = 8.204 W = 60, L = 323 TL221 0.006 , 47.12 W = 1.270, L = 1.191 W = 50, L = 47 TL222 0.035 , 47.12 W = 1.270, L = 7.290 W = 50, L = 287 TL223 0.014 , 15.92 W = 5.283, L = 2.667 W = 208, L = 105 TL224 0.012 , 51.98 W = 1.087, L = 2.502 W = 43, L = 99 TL225 0.016 , 51.98 W = 1.087, L = 3.264 W = 43, L = 129
Data Sheet 9 of 21 Rev. 10, 2015-10-23 PTFA220121M Reference Circuit, 877 MHz (cont.) Circuit Assembly Information Test Fixture Part No. LTN/ PTFA220121M–8 Find Gerber fi les for this test fi xture on the Infi neon Web site at (http://www .infineon.com/rfpower) Reference circuit assembly diagram (not to scale) C802 C801 C803R802 R804 R805 R801 C101 C202 C201 C203C205 C204 C102 C104 R803 R102C103 R101 PTFA220121 M (73)RO4350 , .020 DUT
Data Sheet 10 of 21 Rev. 10, 2015-10-23 Reference Circuit, 877 MHz (cont.) Components Information Component Description Manufacturer P/N Input C101 Chip capacitor, 68 pF ATC ATC100A680JW150X C102 Chip capacitor, 20 pF ATC ATC100A200JW150X C103 Chip capacitor, 10 pF ATC ATC100A100JW150X C104 Chip capacitor, 16 pF ATC ATC100A160JW150X C801, C802, C803 Chip capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K L1 Inductor, 22 nH Coilcraft 0805HT -22NX_BG R101 Resistor, 1.3 Panasonic Electronic Components ERJ-8GEYJ1R3V R102, R805 Resistor, 10 Panasonic Electronic Components ERJ-8GEYJ100V R801 Resistor, 1200 Panasonic Electronic Components ERJ-8GEYJ122V R802 Resistor, 1300 Panasonic Electronic Components ERJ-8GEYJ132V R803 Resistor, 510 Panasonic Electronic Components ERJ-8GEYJ511V R804 Resistor, 2000 Panasonic Electronic Components ERJ-8GEYJ202V S2 EMI Suppression Capacitor Murata NFM18PS105R0J3D S3 Potentiometer, 2k Bourns Inc. 3224W-1-202E S4 Transistor Fairchild Semiconductor BCP56 S5 Voltage regulator Fairchildl Semiconductor LM7805 Output C201 Chip capacitor, 2.2 µF TDK Corporation C4532X7R1H225M160KA C202, C204 Chip capacitor, 68 pF ATC ATC100A680JW150X C203 Chip capacitor, 3.6 pF ATC ATC100A3R6CW150X C205 Chip capacitor, 8.2 pF ATC ATC100A8R2CW150X L2 Inductor, 2.7 nH Coilcraft 0402CS-2N7X_BG R201 Resistor, 0.0 Panasonic Electronic Components ERJ-8GEY0R00V
Data Sheet 11 of 21 Rev. 10, 2015-10-23 PTFA220121M Typical Performance, 1805 MHz RF Characteristics Pulsed CW Performance (not subject to production test – verifi ed by design / characterization in Infi neon test fi xture) VDD = 28 V, IDQ = 130 mA, POUT = 42 W P1dB, ƒ = 1805 MHz 16 µs pulse width, 10% duty cycle, class AB test Characteristic Symbol Min Typ Max Unit Gain G ps — 17 — dB Drain Efficiency D — 52 — % 25 29 33 37 41 45 Drain Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance VDD = 28 V, IDQ = 130 mA Efficiency Gain
1785 MHz
1795 MHz
1805 MHz
Drain Efficiency (%) Output Power (dBm) Input Power (W) Output Power and Efficiency v. Input Power VDD = 28 V, IDQ = 130 mA Efficiency Output Power
Data Sheet 12 of 21 Rev. 10, 2015-10-23 24 26 28 30 32 34 36 38 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA 3GPP VDD =2 8V ,I DQ = 150 mA, ƒ = 2140 MHz 3GPP WCDMA, P/AR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz Efficiency Gain -50 -45 -40 -35 -30 -25 -20 -15 -10 32 33 34 35 36 37 38 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD =2 8V ,I DQ = 150 mA, ƒ = 2140 MHz 3GPP WCDMA, P/AR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz Efficiency IMD Up IMD Low ACPR -40 -35 -30 -25 -20 -15 33 34 35 36 37 38 39 40 41 42 43 Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up VDD =2 8V ,I DQ = 150 mA, ƒ1 = 2139.05 MHz, ƒ 2 = 2140.05 MHz Efficiency IMD3 36 37 38 39 40 41 42 43 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD =2 8V ,I DQ =1 5 0m A , ƒ1 = 2139.05 MHz, ƒ 2 = 2140.05 MHz Efficiency Gain Typical Performance, 2140 MHz
Data Sheet 13 of 21 Rev. 10, 2015-10-23 PTFA220121M -55 -45 -35 -25 -15 2040 2080 2120 2160 2200 2240 Frequency (MHz) Two-tone Broadband Gain, Efficiency & RL vs. Frequency VDD = 28V, IDQ = 150 mA, Avg. PEP = 12 W, tone pacing = 100 kHz Gain RL Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) IMD3 Efficiency -20 -16 -12 1990 2090 2190 2290 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD =2 8V ,I DQ =1 5 0m A IRL Gain -60 -50 -40 -30 -20 -10 33 34 35 36 37 38 39 40 41 42 43 IMD (dBc) Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD =2 8V ,I DQ = 150 mA, ƒ1 = 2139.05 MHz, ƒ 2 = 2140.05 MHz 3rd Order 7th 5th -55 -50 -45 -40 -35 -30 -25 0 2 04 06 08 0 1 0 0 IMD (dBc) Tone Spacing (MHz) Intermodulation Distortion vs. Tone Spacing VDD =2 8V ,I DQ = 150 mA, ƒ = 2140 MHz, PEP = 11.22 W 3rd Order 7th 5th Typical Performance, 2140 MHz (cont.)
Data Sheet 14 of 21 Rev. 10, 2015-10-23 30 32 34 36 38 40 42 44 Drain Efficiency (%) Gain (dB) Output Power (dBm) CW Performance Gain & Efficiency vs. Output Power VDD =2 8V ,I DQ = 150 mA, ƒ = 2140 MHz Efficiency+85°C +25° C –30°C Gain 32 33 34 35 36 37 38 39 40 41 42 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Output Power VDD =2 8V ,I DQ = 150 mA, ƒ = 2140 MHz Efficiency Gain 15.0 15.5 16.0 16.5 17.0 17.5 35 36 37 38 39 40 41 42 43 Power Gain (dB) Output Power (dBm) Two-tone Gain vs. Output Power VDD =2 8V ,ƒ 1 = 2139.05 MHz, ƒ 2 =2 1 4 0 . 0 5 M H z IDQ =1 0 0m A IDQ = 200 mA IDQ =1 5 0m A Typical Performance, 2140 MHz (cont.)
Data Sheet 15 of 21 Rev. 10, 2015-10-23 PTFA220121M Reference Circuit, 2140 MHz Reference circuit input schematic for ƒ = 2140 MHz Reference circuit output schematic for ƒ = 2140 MHz DCVS TL103 TL102 TL105 TL106 TL107 TL108 TL109 TL110 TL111 C101 6.2 pF C102 6.2 pF C103 3.6 pF C104 12 pF 22 nH C801 1000 pF R801 S C B E In Out NC NC 567 TL115 C105 3. 6 pF C106 6.2 pF TL116 TL117 C107 6.2 pF TL104 TL101 TL118 RF_IN VDD 28 V Er=3.48 H=20 mil RO/RO4350B1 TL201 TL202 TL203TL204 TL205 TL206 TL207 TL208 TL209TL210 TL211 TL212 C201 1. 7 pF C202 2.7 pF C203 2.7 pF R201
0000 Ohm
DRAIN DUT RF _OUT TL224 TL225 3TL226 TL227 TL228 TL229 C205 100000 pF TL230 TL231 TL232 C206 2.7 pF C207 12 pF C208 12 pF VDD 28 V
Data Sheet 16 of 21 Rev. 10, 2015-10-23 Reference Circuit, 2140 MHz (cont.) PCB 0.508 mm [.020"] thick, r = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 2140 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101, TL103 0.000 , 144.35 W = 0.025, L = 0.000 W = 1, L = 0 TL102 0.019 , 51.98 W = 1.087, L = 1.575 W = 43, L = 62 TL104, TL111 W1 = 1.087, W2 = 0.813, W3 = 1.087, W1 = 43, W2 = 32, W3 = 43, W4 = 0.813 W4 = 32 TL105 W = 1.524 W = 60 TL106 0.018 , 54.17 W = 1.016, L = 1.524 W = 40, L = 60 TL107 0.061 , 41.75 W = 1.524, L = 5.080 W = 60, L = 200 TL108 0.022 , 25.04 W = 3.048, L = 1.778 W = 120, L = 70 TL109 0.006 , 41.75 W = 1.524, L = 0.508 W = 60, L = 20 TL110 0.015 , 41.75 W = 1.524, L = 1.270 W = 60, L = 50 TL112 0.039 , 51.98 W = 1.087, L = 3.264 W = 43, L = 129 TL113 0.180 , 51.98 W = 1.087, L = 15.291 W = 43, L = 602 TL114 0.039 , 51.98 W = 1.087, L = 3.302 W = 43, L = 130 TL116, TL117 0.000 , 144.35 W = 0.025, L = 0.000 W = 1, L = 0 table continued next page
Data Sheet 17 of 21 Rev. 10, 2015-10-23 PTFA220121M Reference Circuit, 2140 MHz (cont.) Electrical Characteristics at 2140 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL201 0.161 , 51.98 W = 1.087, L = 13.627 W = 43, L = 537 TL202 0.039 , 51.98 W = 1.087, L = 3.264 W = 43, L = 129 TL204 0.075 , 51.98 W = 1.087, L = 6.375 W = 43, L = 251 TL206 0.006 , 41.75 W = 1.524, L = 0.508 W = 60, L = 20 TL207 0.018 , 41.75 W = 1.524, L = 1.524 W = 60, L = 60 TL209 W1 = 1.087, W2 = 3.048 W1 = 43, W2 = 120 TL210 0.022 TL211 0.015 , 63.89 W = 0.762, L = 1.270 W = 30, L = 50 TL212 0.012 , 51.98 W = 1.087, L = 1.041 W = 43, L = 41 TL214 0.133 , 47.12 W = 1.270, L = 11.186 W = 50, L = 440 TL215 W1 = 0.020, W2 = 0.020, Offset = 0.007 W1 = 20, W2 = 780, Offset = 286 TL216 0.017 TL217 W1 = 0.001, W2 = 0.001, Offset = 0.011 W1 = 1, W2 = 50, Offset = 416 TL218 W1 = 0.005, W2 = 0.005, Offset = 0.000 W1 = 5, W2 = 208, Offset = 0 TL219 W1 = 0.001, W2 = 0.005, Offset = –0.002 W1 = 1, W2 = 208, Offset = –79 TL220 0.098 , 41.75 W = 1.524, L = 8.204 W = 60, L = 323 TL222 0.087 , 47.12 W = 1.270, L = 7.290 W = 50, L = 287 TL223 0.071 , 15.92 W = 5.283, L = 5.690 W = 208, L = 224 TL224 0.000 , 41.75 W = 1.524, L = 0.000 W = 60, L = 0 TL227 0.000 , 63.89 W = 0.762, L = 0.000 W = 30, L = 0 TL228 0.000 , 25.04 W = 3.048, L = 0.000 W = 120, L = 0 TL229 0.017 , 47.12 W = 1.270, L = 1.422 W = 50, L = 56 TL231 0.000 , 144.35 W = 0.025, L = 0.000 W = 1, L = 0 TL232 W1 = 1.087, W2 = 0.813, W3 = 1.087 W1 = 43, W2 = 32, W3 = 43, W4 = 0.813 W4 = 32
Data Sheet 18 of 21 Rev. 10, 2015-10-23 Reference Circuit, 2140 MHz (cont.) Circuit Assembly Information Test Fixture Part No. LTN/ PTFA220121M Find Gerber fi les for this test fi xture on the Infi neon Web site at (http://www .infineon.com/rfpower) C802 C803 C802R802 R804 R805 R801 C107 C106 C104 C204 R201 C201 C202 C208 C203 C101 C102 R803 R101 C103 C105 C205 C206 PTFA220121 M (73)RO4350, .020 DUT S4S5 C207 Reference circuit assembly diagram (not to scale)
Data Sheet 19 of 21 Rev. 10, 2015-10-23 PTFA220121M Reference Circuit, 2140 MHz (cont.) Components Information Component Description Manufacturer P/N Input C101, C102, C106, C107 Chip capacitor, 6.2 pF ATC ATC100A6R2CW150X C103, C105 Chip capacitor, 3.6 pF ATC ATC100A3R6CW150X C104 Chip capacitor, 12 pF ATC ATC100A120JW150X C801, C802, C803 Chip capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K L1 Inductor, 22 nH Coilcraft 0805HT -22NX_BG R101, R805 Resistor, 10 Panasonic Electronic Components ERJ-8GEYJ100V R801 Resistor, 1200 Panasonic Electronic Components ERJ-8GEYJ122V R802 Resistor, 1300 Panasonic Electronic Components ERJ-8GEYJ132V R803 Resistor, 510 Panasonic Electronic Components ERJ-8GEYJ511V R804 Resistor, 2000 Panasonic Electronic Components ERJ-8GEYJ202V S2 EMI Suppression Capacitor Murata NFM18PS105R0J3D S3 Potentiometer, 2k Bourns Inc. 3224W-1-202E S4 Transistor Fairchild Semiconductor BCP56 S5 Voltage regulator Fairchild Semiconductor LM7805 Output C201 Chip capacitor, 1.7 pF ATC ATC100A1R7CW150X C202, C203, C206 Chip capacitor, 2.7 pF ATC ATC100A2R7CW150X C204 Chip capacitor, 2.2 µF TDK Corporation C4532X7R1H225M160KA C205 Chip capacitor, 0.1 µF Panasonic Electronic Components ECJ-3VB1H104K C207, C208 Chip capacitor, 12 pF ATC ATC100A120JW150X R201 Resistor, 0.0 Panasonic Electronic Components ERJ-8GEY0R00V
Data Sheet 20 of 21 Rev. 10, 2015-10-23 Package Outline Specifications Package PG-SON-10 Diagram Notes—unless otherwise specifi ed: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.1 [.004]. 5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain. 6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch]. (Find the latest and most complete information about products and packaging at the Infi neon Internet page (http://www .infineon.com/rfpower) 7239,(: ,1'(; 0$5.,1* %277209,(: >@3/$&(6 >@3/$&(6 >@3/$&(6 ,1'(; 0$5.,1* >@3/$&(6 6,'(9,(: >@%27+6,'(6 3*621BSRBB
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpo werRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 Inter national PTFA220121M V4 Page Subjects (major changes since last revision) Data Sheet 21 of 21 Rev. 10, 2015-10-23 Edition 2015-10-23 Published by Infi neon Technologies AG
85579 Neubiberg, Germany
© 2009 – 2015 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce (www.infineon.com/rfpower). W arnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Revision History: 2013-06-17 Data Sheet Previous Revision: 2011-04-11, Data Sheet 2 Change shipping quantity from 500 pcs. to 1,000 pcs.