PTFA220041MV4R1KXUMA1

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Technical content

Features

 Typical two-carrier WCDMA performance,

1842 MHz, 8 dB PAR

• P OUT = 27 dBm Avg - ACPR = –44 dBc  Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB  Typical CW performance, 940 MHz, 28 V - P OUT = 37.5 dBm - Efficiency = 57% - Gain = 19.7 dB  Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power  Integrated ESD protection  Excellent thermal stability  Pb-free and RoHS compliant RF Characteristics Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 28 V, IDQ = 50 mA, POUT = 4 W PEP , ƒ = 1842 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18.5 19 — dB Drain Effi ciency ηD 35 37.5 — % Intermodulation Distortion IMD — –29 –28 dBc Input Return Loss IRL — –8 –7 dB 33 34 35 36 37 38 39 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD =2 8V ,I DQ =5 0m A , ƒ1 = 1841.9 MHz, ƒ 2 = 1842 MHz Efficiency Gain

Confidential, Limited Internal Distribution Data Sheet – DRAFT ONL Y 2 of 18 Rev. 10.1, 2016-06-01 RF Characteristics (cont.) Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 28 V, IDQ = 50 mA, POUT = 5 W PEP , ƒ = 940 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 18.5 — dB Drain Effi ciency ηD — 37 — % Intermodulation Distortion IMD — –30 — dBc Input Return Loss IRL — –10 — dB DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 µA V (BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance V GS = 10 V, VDS = 0.1 A R DS(on) — 2.01 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 50 mA V GS 2.1 2.7 3.1 V Gate Leakage Current V GS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature T J 175 °C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 5 W CW) RθJC 5.5 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Temperature Unit

3 IPC/JEDEC J-STD-020 260 °C

Ordering Information

Type and Version Order Code Package and Description Shipping PTFA220041M V4 R1K PTFA220041MV4R1KXUMA1 PG-SON-10, molded plastic, SMD Tape & Reel, 1,000 pcs

Data Sheet – DRAFT ONL Y 3 of 18 Rev. 10.1, 2016-06-01 PTFA220041M Confidential, Limited Internal Distribution Typical Performance, 1842 MHz (data taken in Infi neon test fi xture) 25 27 29 31 33 35 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA 3GPP VDD =2 8V ,I DQ =5 0m A ,ƒ=1 8 4 2M H z ,3 G P P WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing, BW 3.84 MHz Efficiency Gain -50 -45 -40 -35 -30 -25 -20 -15 25 27 29 31 33 35 IMD (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD =2 8V ,I DQ = 50 mA, 3GPP WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing, BW 3.84 MHz ACPR IM3 Lower IM3 Upper -50 -40 -30 -20 -10 25 27 29 31 33 35 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD =2 8V ,I DQ = 50 mA, ƒ = 1842 MHz, 3GPP WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing, BW 3.84 MHz Efficiency IMD Up ACPR IMD Low 30 31 32 33 34 35 36 37 38 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Output Power VDD =2 8V ,I DQ =5 0m A ,ƒ=1 8 4 2M H z Efficiency Gain

Confidential, Limited Internal Distribution Data Sheet – DRAFT ONL Y 4 of 18 Rev. 10.1, 2016-06-01 Typical Performance, 1842 MHz (cont.) -40 -35 -30 -25 -20 -15 33 34 35 36 37 38 39 Efficiency (%) IMD (dBc) Output Power, PEP (dBm) Two-tone Drive-up VDD =2 8V ,I DQ =5 0m A , ƒ1 = 1841.9 MHz, ƒ 2 = 1842 MHz Efficiency IMD3 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 33 34 35 36 37 38 39 Power Gain (dB) Output Power( d B m ) Two-tone Gain vs. Output Power VDD =2 8V ,ƒ 1 =1 8 4 1 . 9M H z ,ƒ2 =1 8 4 2M H z IDQ =2 5m A IDQ =5 0m A IDQ =6 3m A IDQ =7 5m A -55 -45 -35 -25 -15 1720 1760 1800 1840 1880 1920 1960 Frequency (MHz) Two-tone Broadband Gain, Efficiency & RL vs. Frequency VDD =2 8 V ,IDQ =5 0m A ,a v gPOUT =2W , tone spacing = 100 kHz Gain RL Efficiency IMD3 Gain / Efficiency (dB / %) Return Loss (dB), IMD (dBc) -10.0 -8.0 -6.0 -4.0 -2.0 0.0 1692 1792 1892 1992 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD =2 8V ,I DQ =5 0m A IRL Gain

Data Sheet – DRAFT ONL Y 5 of 18 Rev. 10.1, 2016-06-01 PTFA220041M Confidential, Limited Internal Distribution Typical Performance, 1842 MHz (cont.) -60 -50 -40 -30 -20 -10 0 2 04 06 08 0 1 0 0 IMD (dBc) Tone Spacing (MHz) Intermodulation Distortion vs. Tone Spacing VDD =2 8V ,I DQ = 50 mA, ƒ = 1842 MHz, POUT (PEP) = 4 W 3rd Order 7th 5th -60 -50 -40 -30 -20 -10 32 34 36 38 40 IMD (dBc) Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD =2 8V ,I DQ =5 0m A , ƒ1 = 1841.9 MHz, ƒ 2 =1 8 4 2M H z 3rd Order 7th 5th 30 31 32 33 34 35 36 37 38 Drain Efficiency (%) Gain (dB) Output Power (dBm) CW Performance Gain & Efficiency vs. Output Power VDD =2 8V ,I DQ = 50 mA, ƒ = 1842 MHz Efficiency Gain +85°C +25°C –30°C

Confidential, Limited Internal Distribution Data Sheet – DRAFT ONL Y 6 of 18 Rev. 10.1, 2016-06-01 Broadband Circuit Impedance, 1842 MHz Frequency Z Source Ω Z Load Ω MHz R jX R jX 720 2.4 16.9 45.2 25.2 820 1.8 13.4 31.0 15.2 869 1.6 11.8 21.3 18.2 894 1.6 12.0 22.1 18.4 920 1.6 10.6 14.5 21.5 940 1.6 10.1 15.2 21.4 960 1.6 10.3 16.1 18.9 1805 2.1 3.2 6.8 12.1 1880 2.1 2.2 6.4 10.9 1930 1.8 1.3 6.3 10.6 1990 2.1 1.5 4.3 8.1 2110 2.5 2.0 4.9 8.4 2170 2.0 2.0 4.4 8.8 0.1 0.3 0.5 0.2 0.4 0.1 0.3 0.5 0.2 0.4 VELENGTHS TOW ARD GENERATOR ---> 0.05 0.45 LOAD - 0.0 Z Source Z Load

2170 MHz

720 MHz

G S D Z0 = 50 Ω

Data Sheet – DRAFT ONL Y 7 of 18 Rev. 10.1, 2016-06-01 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 1842 MHz Reference circuit input schematic for ƒ = 1842 MHz Reference circuit output schematic for ƒ = 1842 MHz R803

500 Ohm

10 Ohm

2000 Ohm

7.5 pF C106 7.5 pF R802

1300 Ohm

4.7 pF R102 6.2 pF TL102 TL103 TL107 TL105 TL104 TL101 TL106 GATE DUT RF_IN C B E In Out NC NC 4 567 C107 7.5 pF 22 nH C802 1000000 pF R801

1200 Ohm

7.5 pF TL111TL110 Er=3.48 H=20 mil RO/RO4350B1 VDD 28 V TL214 TL215 C202 4.7 pF TL203 TL204 TL205 TL206 TL207 TL208 TL209TL210 TL211 TL212 TL213 TL216 TL217 TL218 TL219TL220 TL221 C203 4.7 pF TL222 22 nH C204 100000 pF C205 12 pF C206 2200000 pF C207 12 pF C201 3.6 pF DRAIN DUT RF_OUT TL201 TL226 TL223 TL224TL225 TL202 VDD 28 V

Confidential, Limited Internal Distribution Data Sheet – DRAFT ONL Y 8 of 18 Rev. 10.1, 2016-06-01 Reference Circuit, 1842 MHz (cont.) Electrical Characteristics at 1842 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL101 0.005 λ, 41.75 Ω W = 1.524, L = 0.508 W = 60, L = 20 TL102 0.021 λ, 51.98 Ω W = 1.087, L = 2.108 W = 43, L = 83 TL103 W = 1.524 W = 60 TL104 0.019 λ, 25.04 Ω W = 3.048, L = 1.778 W = 120, L = 70 TL105 0.052 λ, 41.75 Ω W = 1.524, L = 5.08 W = 60, L = 200 TL106 0.013 λ, 41.75 Ω W = 1.524, L = 1.27 W = 60, L = 50 TL107 0.015 λ, 54.17 Ω W = 1.016, L = 1.524 W = 40, L = 60 TL108 0.033 λ, 51.98 Ω W = 1.087, L = 3.264 W = 43, L = 129 TL109 0.149 λ, 51.98 Ω W = 1.087, L = 14.681 W = 43, L = 578 TL110 0.034 λ, 51.98 Ω W = 1.087, L = 3.378 W = 43, L = 133 TL112, TL113, TL115, TL116 W = 0, L = 0 W = 0, L = 0 TL114, TL 117 W1 = 1.087, W2 = 0.813, W3 = 1.087 W1 = 43, W2 = 32, W3 = 43, W4 = 0.813 W4 = 32 TL118 W1 = 3.048, W2 = 0.762, W3 = 3.048, W1 = 120, W2 = 30, W3 = 120, W4 = 0.762 W4 = 30 Output TL201, TL225, TL226 W1 = 0.025, W2 = 0.025 W1 = 1, W2 = 1 TL202 0.013 λ, 41.75 Ω W1 = 1.524, W2 = 1.524, W3 = 1.27 W1 = 60, W2 = 60, W3 = 50 TL203 0.005 λ, 41.75 Ω W = 1.524, L = 0.508 W = 60, L = 20 TL204 0.016 λ, 41.75 Ω W = 1.524, L = 1.524 W = 60, L = 60 TL209 W = 1.087, W2 = 3.048 W = 43, W2 = 120 TL210 0.019 λ, 25.04 Ω W = 3.048, L = 1.778 W = 120, L = 70 TL211 0.014 λ, 41.75 Ω W = 1.524, L = 1.346 W = 60, L = 53 TL212 0.013 λ, 63.89 Ω W = 0.762, L = 1.27 W = 30, L = 50 TL213 0.031 λ, 51.98 Ω W = 1.087, L = 3.073 W = 43, L = 121 TL214 0.163 λ, 47.12 Ω W = 1.27, L = 15.926 W = 50, L = 627 TL215 0.074 λ, 47.12 Ω W = 1.27, L = 7.29 W = 50, L = 287 TL216 0.076 λ, 15.92 Ω W = 5.283, L = 6.986 W = 208, L = 275 TL217 0.123 λ, 51.98 Ω W = 1.087, L = 12.103 W = 43, L = 477 TL218 0.033 λ, 51.98 Ω W = 1.087, L = 3.264 W = 43, L = 129 TL220 0.060 λ, 51.98 Ω W = 1.087, L = 5.867 W = 43, L = 231 TL223 0.016 λ, 41.75 Ω W = 1.524, L = 1.524 W = 60, L = 60 TL224 0.149 λ, 47.12 Ω W = 1.27, L = 14.554 W = 50, L = 573

Data Sheet – DRAFT ONL Y 9 of 18 Rev. 10.1, 2016-06-01 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 1842 MHz (cont.) Reference circuit assembly diagram (not to scale) 802 C801 C803R802 R804 R805 R801 C103 C105 C205 C206 C201C203 C207 C204 C202 C104 C107 C106 R803 R102C102 C101 PTFA220041M (73)RO4350, .020 VDD DUT

Confidential, Limited Internal Distribution Data Sheet – DRAFT ONL Y 10 of 18 Rev. 10.1, 2016-06-01 Reference Circuit, 1842 MHz (cont.) Circuit Assembly Information DUT PTFA220041M LDMOS Transistor PCB LTN/PTFA220041M 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. copper Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower Component Description Manufacturer P/N Input C101 Chip capacitor, 6.2 pF ATC 100A6R2CW150X C102 Chip capacitor, 4.7 pF ATC 100A4R7CW150X C103 Chip capacitor, 12 pF ATC 100A120JW150X C104, C105, C106, C107 Chip capacitor, 7.5 pF ATC 100A7R5CW150X C801, C802, C803 Chip capacitor, 1.0 µF Digi-Key 445-1411-2-ND L1 Inductor, 22 nH Coilcraft 0805HT -22NX_BG R102, R805 Resistor, 10 Ω Digi-Key P10ECT -ND R801 Resistor, 1200 Ω Digi-Key P1.2KECT -ND R802 Resistor, 1300 Ω Digi-Key P1.3KECT -ND R803 Resistor, 500 Ω Digi-Key P500ECT -ND R804 Resistor, 2000 Ω Digi-Key P2.0KECT -ND S2 EMI Suppression Capacitor Murata NFM18PS105R0J3 S3 Potentiometer, 2k Ω Digi-Key 3224W-202ECT -ND S4 Transistor Infineon Technologies BCP56 S5 Voltage regulator National Semiconductor LM7805 Output C201 Chip capacitor, 3.6 pF ATC 100A3R6CW150X C202, C203 Chip capacitor, 4.7 pF ATC 100A4R7CW150X C204 Chip capacitor, 0.1 µF Digi-Key PCC104BCT -ND C205, C207 Chip capacitor, 12 pF ATC 100A120JW150X C206 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND L2 Inductor, 22 nH Coilcraft 0805HT -22NX_BG

Data Sheet – DRAFT ONL Y 11 of 18 Rev. 10.1, 2016-06-01 PTFA220041M Confidential, Limited Internal Distribution Typical Performance, 940 MHz 25 27 29 31 33 35 Drain Efficiency (%) Gain (dB) Output Power (d Bm) Two-carrier WCD MA 3GPP VDD =2 8V ,I DQ = 50 mA, ƒ = 940 MHz, 3GPP WCDMA, P/AR = 8:1, 10 M Hz carrier spacing BW 3.84M H z Efficie ncy Gain 30 31 32 33 34 35 36 37 38 Drain Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW Gain & Efficiency vs. Ou tput Power VDD =2 8V ,I DQ =5 0m A, ƒ = 940 MHz Efficien cy Gain -40 -35 -30 -25 -20 -15 -10 33 34 35 36 37 38 39 Efficiency (%) IMD (dBc) Output Power, PEP (dB m) Two-tone Drive-up VDD =2 8V ,I DQ =5 0m A , ƒ1 = 939.9 MHz, ƒ 2 =9 4 0M H z Efficiency IMD3 33 34 35 36 37 38 39 Efficiency (%) Gain (dB) Output Power, PEP (dBm) Two-tone Drive-up VDD =2 8V ,I DQ =5 0m A , ƒ1 = 939.9 MHz, ƒ 2 =9 4 0M H z Effic iency Gain

Confidential, Limited Internal Distribution Data Sheet – DRAFT ONL Y 12 of 18 Rev. 10.1, 2016-06-01 Typical Performance, 940 MHz (cont.) See reference circuit for 940 MHz, next page -25 -20 -15 -10 790 890 990 1090 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD =2 8V ,I DQ =5 0m A IRL Gain -60 -50 -40 -30 -20 -10 32 34 36 38 40 IMD (dBc) Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD =2 8V ,I DQ =5 0m A , ƒ1 = 939.9 MHz, ƒ 2 = 940 MHz 3rd Order 7th 5th

Data Sheet – DRAFT ONL Y 13 of 18 Rev. 10.1, 2016-06-01 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 940 MHz Reference circuit input schematic for ƒ = 940 MHz Reference circuit output schematic for ƒ = 940 MHz C101 16 pF R803 GATE DUTRF_IN C B E In Out NC NC 4 567 R802 Er=3.48 H=20 mil RO/RO4350B1

1.3 Ohm

RF_OUT TL211 TL212 TL213 C202 2200000 pF C203 3.6 pF TL214 TL215 TL216 TL217 TL218 TL219 TL220TL221 TL222 TL223 TL224 4.3 nH C204 62 pF C205 62 pF DRAIN DUT VDD 28 V

Confidential, Limited Internal Distribution Data Sheet – DRAFT ONL Y 14 of 18 Rev. 10.1, 2016-06-01 Reference Circuit, 940 MHz (cont.) Electrical Characteristics at 940 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL104 0.017 λ, 51.66 Ω W = 1.087, L = 3.264 W = 43, L = 129 TL105 0.038 λ, 51.66 Ω W = 1.087, L = 7.341 W = 43, L = 289 TL106 0.047 λ, 51.66 Ω W = 1.087, L = 9.144 W = 43, L = 360 TL108, TL109 0.000 λ, 144.28 Ω W = 0.025, L = 0.000 W = 1, L = 0 TL110 0.019 λ, 51.66 Ω W = 1.087, L = 3.734 W = 43, L = 147 TL111 W = 1.524 W = 60 TL112 0.008 λ, 53.85 Ω W = 1.016, L = 1.524 W = 40, L = 60 TL113 0.027 λ, 41.47 Ω W = 1.524, L = 5.080 W = 60, L = 200 TL114 0.010 λ, 24.85 Ω W = 3.048, L = 1.778 W = 120, L = 70 TL115 0.003 λ, 41.47 Ω W = 1.524, L = 0.508 W = 60, L = 20 TL116 0.007 λ, 41.47 Ω W = 1.524, L = 1.270 W = 60, L = 50 Output TL201 0.076 λ, 46.82 Ω W = 1.270, L = 14.554 W = 50, L = 573 TL202 W1 = 0.025, W2 = 0.025 W1 = 1, W2 = 1 TL204 0.083 λ, 46.82 Ω W = 1.270, L = 15.927 W = 50, L = 627 TL205 0.038 λ, 46.82 Ω W = 1.270, L = 7.290 W = 50, L = 287 TL206 0.039 λ, 15.79 Ω W = 5.283, L = 6.986 W = 208, L = 275 TL207 0.063 λ, 51.66 Ω W = 1.087, L = 12.103 W = 43, L = 477 TL208 0.017 λ, 51.66 Ω W = 1.087, L = 3.264 W = 43, L = 129 TL209 0.004 λ, 51.66 Ω W1 = 1.087, W2 = 1.087, W3 = 0.813 W1 = 43, W2 = 43, W3 = 32 TL210 0.046 λ, 51.66 Ω W =1.087, L = 8.852 W = 43, L = 349 TL211, TL212 W1 = 0.025, W2 = 0.025 W1 = 1, W2 = 1 TL213, TL215 0.008 λ, 41.47 Ω W = 1.524, L = 1.524 W = 60, L = 60 TL214 0.003 λ, 41.47 Ω W = 1.524, L = 0.508 W = 60, L = 20 TL220 W1 = 1.087, W2 = 3.048 W1 = 43, W2 = 120 TL221 0.010 λ, 24.85 Ω W = 3.048, L = 1.778 W = 120, L = 70 TL222 0.007 λ, 41.47 Ω W = 1.524, L = 1.346 W = 60, L = 53 TL223 0.007 λ, 63.55 Ω W = 0.762, L = 1.270 W = 30, L = 50 TL224 0.004 λ, 51.66 Ω W = 1.087, L = 0.851 W = 43, L = 33

Data Sheet – DRAFT ONL Y 15 of 18 Rev. 10.1, 2016-06-01 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 940 MHz (cont.) Reference circuit assembly diagram (not to scale) C802 R801 R805 R804 R802 C803C801 C103 R101 C104 R102 R803 C101 C102 C201 C205C203 C202 C204 PTFA220041M (73)RO4350, .020 DUT S5 S4 VDD

Confidential, Limited Internal Distribution Data Sheet – DRAFT ONL Y 16 of 18 Rev. 10.1, 2016-06-01 Reference Circuit, 940 MHz (cont.) Circuit Assembly Information DUT PTFA220041M LDMOS Transistor PCB LTN/PTFA220041M–9 0.508 mm [.020"] thick, εr = 3.48 Rogers 4350, 1 oz. copper Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower Component Description Supplier P/N Input C101 Chip capacitor, 16 pF ATC 100A160JW150X C102 Chip capacitor, 22 pF ATC 100A220JW150X C103 Chip capacitor, 62 pF ATC 100A620JW150X C104 Chip capacitor, 10 pF ATC 100A100JW150X C801, C802, C803 Chip capacitor, 1000 pF Digi-Key PCC1772CT -ND L1 Inductor, 22 nH Coilcraft 0805HT -22NX_BG R101 Resistor, 1.3 Ω Digi-Key P1.3ECT -ND R102, R805 Resistor, 10 Ω Digi-Key P10ECT -ND R801 Resistor, 1200 Ω Digi-Key P1.2KECT -ND R802 Resistor, 1300 Ω Digi-Key P1.3KECT -ND R803 Resistor, 500 Ω Digi-Key P5.0KECT -ND R804 Resistor, 2000 Ω Digi-Key P2.0KECT -ND S2 EMI Suppression Capacitor Murata NFM18PS105R0J3 S3 Potentiometer, 2k Ω Digi-Key 3224W-202ECT -ND S4 Transistor Infineon Technologies BCP56 S5 Voltage Regulator National Semiconductor LM7805 Output C201 Chip capacitor, 0.1 µF Digi-Key PCC104BCT -ND C202 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND C203 Chip capacitor, 3.6 pF ATC 100A3R6CW150X C204, C205 Chip capacitor, 62 pF ATC 100A620JW150X L2 Inductor, 22 nH Coilcraft 0805HT -22NX_BG L3 Inductor, 4.3 nH Coilcraft 0603CS-4N3X_BG

Data Sheet – DRAFT ONL Y 17 of 18 Rev. 10.1, 2016-06-01 PTFA220041M Confidential, Limited Internal Distribution Package Outline Specifi cations Package PG-SON-10 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 7239,(: ,1'(; 0$5.,1* %277209,(: >@3/$&(6 >@3/$&(6 >@3/$&(6 ,1'(; 0$5.,1* >@3/$&(6 6,'(9,(: >@%27+6,'(6 3*621BSRBB Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm; alternate dimensions are inches 3. All tolerances ± 0.1 [.004] 4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm 5. Pins: S source; 1 – 5 gate, 6 - 10 = drain 6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch]

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 Inter national Data Sheet – DRAFT ONL Y 18 of 18 Rev. 10.1, 2016-06-01 Edition 2016-06-01 Pub lished by Infi neon Technologies AG

85579 Neubiberg, Germany

© 2009 – 2016 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). W arnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTFA220041M V4 Confidential, Limited Internal Distribution

Revision History

Revision Date Data Sheet Page Subjects (major changes at each revision) 01 2008-12-16 Advance all Advance Specifi cations for product in development. 02 2009-06-19 Advance 1, 2, 3 Refi ne RF characteristics. Add package information (still preliminary). 03 2009-08-03 Advance 1 – 3 Update package information. 04 2009-11-03 Production all Firm specifi cations for this released product, including reference circuit and com- plete package outline information. 05 2009-18-18 Production 11 – 16 Add 940 MHz performance and reference circuit information. 06 2010-01-19 Production 2 Review and update specifi cations. 07 2010-04-15 Production 2 Add moisture sensitivity table. 08 2010-06-07 Production 6 Revise broadband circuit impedance. 09 2011-04-01 Production 1 5, 12 Update ESD information Remove CW performance graphs 10 2016-03-17 Production 2 Add current shipping and ordering information. Operating gate voltage adjusted. 10.1 2016-06-01 Production all Add revision state to footer Correct product version to V4