PTFA210601E INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Thermally-enhanced packages , Pb-free and RoHS-compliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 12 W - Linear Gain = 16 dB - Efficiency = 27.0% - Intermodulation distortion = –38 dBc - Adjacent channel power = –44 dBc
  • Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 68 W - Efficiency = 58.5%
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift
  • Capable of handling 10:1 VSWR @ 28 V,

60 W (CW) output power

*See Infineon distributor for future availability.

Data Sheet 2 of 10 Rev. 03, 2007-11-19 RF Characteristics (cont.) Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture ) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 16 — dB Drain Efficiency η D — 42 — % Intermodulation Distortion IMD — –28 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.15 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 550 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 196 W Above 25°C derate by 1.12 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 60 W CW) Rθ JC 0.89 °C/W

Ordering Information

Type and Version Package Type Package Description Marking PTFA210601E V4 H-36265-2 Thermally-enhanced slotted flange, single-ended PTFA210601E PTFA210601F V4 H-37265-2 Thermally-enhanced earless flange, single-ended PTFA210601F *See Infineon distributor for future availability.

Data Sheet 3 of 10 Rev. 03, 2007-11-19 Broadband Performance VDD = 28 V, IDQ = 550 mA, POUT = 41 dBm 2070 2090 2110 2130 2150 2170 2190 2210 Frequency (MHz) Gain (dB), Efficiency (%) -35 -30 -25 -20 -15 -10 Input Return Loss (dB) Gain Efficiency Return Loss 2-Tone Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, tone spacing = 1 MHz -65 -60 -55 -50 -45 -40 -35 -30 -25 35 37 39 41 43 45 47 49 Output Power, PEP (dBm) Drain Efficiency (%) IM5 Efficiency IM7 IM3 Intermodulation Distortion (dBc) Typical Performance (data taken in a production test fixture) Power Sweep, CW Conditions VDD = 28 V, IDQ = 550 mA, f = 2170 MHz 0 10 20 30 40 50 60 70 Output Power (W) Gain (dB) Drain Efficiency (%) Gain Efficiency TCASE = 25°C TCASE = 90°C Two-carrier WCDMA at Selected Biases VDD = 28 V, f = 1960 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show I DQ -55 -50 -45 -40 -35 -30 31 33 35 37 39 41 43 Output Power, PEP (dBm) 3rd Order IMD (dBc) 550 mA 600 mA 500 mA 450 mA 650 mA

Data Sheet 4 of 10 Rev. 03, 2007-11-19 Intermodulation Distortion Products vs. Tone Spacing VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, POUT = 47.8 dBm PEP -55 -50 -45 -40 -35 -30 -25 -20 0 5 10 15 20 25 30 35 40 Tone Spacing (MHz) Intermodulation Distortion (dBc) 3rd Order 5th 7th Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 Case Temperature (°C) Normalized Bias Voltage (V) 0.56 A 1.11 A 1.67 A 2.22 A 2.78 A 3.33 A 3.89 A 4.44 A 5.00 A IM3, Drain Efficiency and Gain vs. Supply Voltage IDQ = 550 mA, f = 2140 MHz, POUT (PEP) = 47.8 dBm, tone spacing = 1 MHz -45 -40 -35 -30 -25 -20 -15 -10 23 24 25 26 27 28 29 30 31 32 33 Supply Voltage (V) 3rd Order Intermodulation Distortion (dBc) Gain (dB), Drain Efficiency (%) Gain Efficiency IM3 Up Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW -55 -50 -45 -40 -35 -30 -25 32 34 36 38 40 42 44 Average Output Power (dBm) Drain Efficiency (%) ACPR Up Adjacent Channel Power Ratio (dB) Efficiency ACPR Low Typical Performance (cont.)

Data Sheet 5 of 10 Rev. 03, 2007-11-19 Broadband Circuit Impedance Z Source Z Load G S D Frequency Z Source W Z Load W MHz R jX R jX 2070 10.29 –5.79 4.91 1.57 2110 9.46 –6.02 4.83 1.75 2140 8.79 –5.95 4.85 2.12 2170 8.14 –5.91 4.76 2.38 2210 7.19 –5.72 4.66 2.55 0.1 0.3 0.2 0.4 0.1 0.2 0.1 0.2 - W AVELENGTHS TOW ARD GENERATOR ---> <--- W AVELENGTHS TOW ARD LOAD - 0.0

2210 MHz

2070 MHz

Z0 = 50 Ω See next page for reference circuit information

Data Sheet 6 of 10 Rev. 03, 2007-11-19 a210601ef_sch 2KV 2KV 0.001µF 0.001µF BCP56 1.3K V 1.2K V LM7805 0.001µF QQ1 10V 10pF 1.5pF 10pF .02µF DUT C11 C12 C10 .1µF .1µF 10µF 35V .01µF R81KV 10pF 10V R61KV R71KV l2 l3 l5 l9 l11 l10 l4 l8 10pF 0.7pF 22µF1µF C13 C16 C17 C18 50V .1µF C15C14 1µF l12 l13 VDD VDD RF_IN RF_OUT Reference Circuit Reference circuit schematic for ƒ = 2140 MHz Circuit Assembly Information DUT PTFA210601E or PTFA210601F LDMOS Transistor PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers 4350 1 oz. copper Microstrip Electrical Characteristics at 2140 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) 1Electrical characteristics are rounded.

Data Sheet 7 of 10 Rev. 03, 2007-11-19 Reference circuit assembly diagram (not to scale)* Reference Circuit (cont.) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND C5, C6, C15 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C7 Capacitor, 0.01 µF ATC 100B 103 C8, C9, C11, C18 Ceramic capacitor, 10 pF ATC 100B 100 C10 Ceramic capacitor, 1.5 pF ATC 100B 1R5 C12 Capacitor, 0.02 µF ATC 200B 203 C13, C14 Capacitor, 1.0 µF Digi-Key 445-1411-1-ND C16 Electrolytic capacitor, 22 µF, 50 V Digi-Key PCE3374CT-ND C17 Ceramic capacitor, 0.7 pF ATC 100B 0R7 Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage regulator National Semiconductor LM7805 R1 Chip resistor, 1.2k ohms Digi-Key P1.2KGCT-ND R2 Chip resistor, 1.3k ohms Digi-Key P1.3KGCT-ND R3 Chip resistor, 2k ohms Digi-Key P2KECT-ND R4 Potentiometer, 2k ohms Digi-Key 3224W-202ETR-ND R5, R9 Chip resistor, 10 ohms Digi-Key P10ECT-ND R6, R7, R8 Chip resistor, 1k ohms Digi-Key P1KECT-ND *Gerber Files for this circuit available on request a2 1060 1ef _assy QQ1 C2R2 C7 C8 C9 C10 C17 C18 C12 C11 C14 C13 C16 C15R7R6 R8 R9 LM10 35V+ 2 2 HHD 4 V6 VDD RF_IN RF_OUT

Data Sheet 8 of 10 Rev. 03, 2007-11-19 Package Outline Specifications Package H-36265-2 Diagram Notes—unless otherwise specified: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products 20.31 [.800] 10.16±0.25 [.400±.010] FLANGE 9.78 [.385] 2x 7.11 [.280] 2X 7.11 [.280] 15.23 [.600] 4X R1.52 [R.060] CL CL (45° X 2.03 [.080]) S D G LID 10.16±0.25 [.400±.010] 0.0381 [.0015] -A- 3.56±0.38 [.140±.015 1.02 [.040] SPH 1.57 [.062] 2X R1.60 [R.063] 15.34±0.51 [.604±.020] 2.59±0.51 [.102±.020]

Data Sheet 9 of 10 Rev. 03, 2007-11-19 Package Outline Specifications (cont.) Package H-37265-2 Diagram Notes—unless otherwise specified: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products 071119_h-36+37265_POs_h-37265-2 (45° X 2.03 [.080]) 2.59±0.51 [.102±.020] S D G LID 10.16±0.25 [.400±.010] FLANGE 10.16 [.400] 2X 7.11 [.280] LID 10.16±0.25 [.400±.010] 10.16 [.400] 1.02 [.040] 3.56±.38 [.140±.015] SPH 1.57 [.062] 10.16 [.400] 15.34±.51 [.604±.020] FLANGE 4X R0.63 [R.025] MAX |0.025 [.001]|-A- CL CL

Data Sheet 10 of 10 Rev. 03, 2007-11-19 PTFA210601E/F Confidential, Limited Internal Distribution Revision History: 2007-11-19 Data Sheet Previous Version: 2007-03-02, Data Sheet Page Subjects (major changes since last revision) 1, 2, 8, 9 Update to product V4, with new package technologies. Update package outline diagrams. GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2007-11-19 Published by Infineon Technologies AG

81726 München, Germany

© Infineon Technologies AG 2005. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International