PTFA142401EL INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Pb-free, RoHS-compliant and thermally-enhanced packages with less than 0.25 micron Au plating
  • Broadband internal matching
  • Typical DVB-T performance at 1475 MHz, 30 V - Average output power = 47.0 dBm - Linear Gain = 16.0 dB - Efficiency = 27.5% - Adjacent channel power = –32 dBc
  • Typical CW performance, 1475 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 52%
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift
  • Capable of handling 10:1 VSWR @ 30 V,

200 W (CW) output power

*See Infineon distributor for future availability. RF Characteristics DVB-T Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.0 A, POUT = 50 W average ƒ = 1475 MHz DVB-T, channel bandwidth = 8.0 MHz , peak/average = 9.65 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 16.5 — dB Drain Efficiency η D — 27.5 — % Adjacent Channel Power Ratio (±4.3 MHz offset, 30 kHz RBW) ACPR — –32 — dBc

Data Sheet 2 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 2.0 A, POUT = 240 W PEP, ƒ = 1500 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 15.0 16.0 — dB Drain Efficiency η D 40 43 — % Intermodulation Distortion IMD — –31 –29 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 2.0 A VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 625 W Above 25°C derate by 3.57 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 240 W CW) Rθ JC 0.28 °C/W

Ordering Information

Type and Version Package Outline Package Description Shipping Marking PTFA142401EL V4 H-33288-2 Thermally-enhanced, slotted flange, Tray PTFA142401EL single-ended PTFA142401FL V4 H-34288-2 Thermally-enhanced, earless flange, Tray PTFA142401FL single-ended *See Infineon distributor for future availability.

Data Sheet 3 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Pulsed CW Characteristics VDD = 30 V, IDQ = 1800 mA, ƒ = 1475 MHz 10 µs pulse time, 10% duty cycle 30 32 34 36 38 40 42 Input Power (dBm) Output Power (dBm) Measured POUT Ideal POUT Broadband Performance VDD = 30 V, IDQ = 2000 mA, POUT = 50 W 1400 1430 1460 1490 1520 1550 Frequency (MHz) Gain (dB), Efficiency (%) -30 -25 -20 -15 -10 Input Return Loss (dB)Gain Efficiency Return Loss Power Sweep, CW Conditions VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz 0 40 80 120 160 200 240 280 Output Power (W) Gain (dB) Drain Efficiency (%) Gain Efficiency Typical Performance (data taken in an Infineon test fixture) Two-tone Drive-up VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz, tone spacing = 1 MHz -65 -60 -55 -50 -45 -40 -35 -30 -25 45 47 49 51 53 55 Output Power, PEP (dBm) Drain Efficiency (%) IM5 Efficiency IM7 Intermodulation Distortion (dBc) IM3

Data Sheet 4 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Typical Performance (cont.) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 0.98 0.98 0.99 0.99 1.00 1.00 1.01 1.01 1.02 1.02 1.03 1.03 -20 0 20 40 60 80 100 Case Temperature (°C) Normalized Bias Voltage (V) 2.33 A 4.65 A 6.99 A 9.33 A 11.64 A 13.98 A 16.32 A 18.66 A 21.00 A CW Power Sweep (P–1dB) VDD = 30 V, IDQ = 1.8 A, ƒ = 1500 MHz 0 40 80 120 160 200 240 280 Output Power (W) Gain (dB) Drain Efficiency (%) Drain Efficiency TCASE = 25°C TCASE = 90°C Gain Gain vs. Output Power VDD = 30 V, ƒ = 1500 MHz 15.0 15.5 16.0 16.5 17.0 0 40 80 120 160 200 240 Output Power (W) Power Gain (dB) IDQ = 1800 mA IDQ = 1500 mA IDQ = 1200 mA IDQ = 600 mA IDQ = 900 mA

Data Sheet 5 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Z Source Z Load G S D Frequency Z Source W Z Load W MHz R jX R jX Broadband Circuit Impedance 0.1 0.2 0.1 0.1 0.2 - W AVELENGTHS TOW ARD GE <--- W AVELENGTHS TOW ARD LOAD - 0.0

1450 MHz

1500 MHz

Z0 = 50 Ω See next page for circuit information

Data Sheet 6 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution V66100-G9259-D331-01-7606.dwg 2K V 1.2K V 33pF DUT 7.5pF 0.1µF 10µF 35V 5.1K V 10 V C14 10µF 35V l2 l3 l5 4.5pF C13 0.1µF C16 1µF C15 13pF C19 0.1µF C18 100µF 50V C17 1µF C20 10µF 35V l14 C24 1.7pF 2K V 0.001µF 0.001µF BCP56 1.3K V QQ1 LM7805 0.001µF VDD 10 V VDD l 8 l 7 C21 1.7pF C22 1.7pF l 9 l 10 l 11 l 12 l 13 C23 33pF C12 100µF 50V C10 1µF 13pF C11 1µF Circuit Assembly Information DUT PTFA142401EL or PTFA142401FL LDMOS Transistor PCB 0.76 mm [.030"] thick, εr = 4.5 TMM4 2 oz. copper Microstrip Electrical Characteristics at 1475 MHz Dimensions: L x W ( mm) Dimensions: L x W (in.) Reference circuit schematic for ƒ = 1475 MHz Reference Circuit

Data Sheet 7 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Reference Circuit (cont.) V66100-G9259-D331-01-7631.dwg R7R6 C3R4 C12 C24 C21 C8C7 C23 C20 C19 C13 C14 C11C9R3R5 C5 RF_IN C15 C17 C16 C18 L2 QQ1 C22 RF_OUT C10 GND VDD Reference circuit assembly diagram * (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4, C14, C20 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND C5, C13, C19 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C6 Ceramic capacitor, 7.5 pF ATC 100B 7R5 C7, C23 Ceramic capacitor, 33 pF ATC 100B 330 C8 Ceramic capacitor, 4.5 pF ATC 100B 4R5 C9, C15 Ceramic capacitor, 13 pF ATC 100B 130 C10, C11, C16, C17 Capacitor, 1 µF ATC 920C105 C12, C18 Electrolytic capacitor, 100 µF, 50 V Digi-Key PCE3718CT-ND C21, C22, C24 Ceramic capacitor, 1.7 pF ATC 100B 1R7 L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2 Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage regulator National Semiconductor LM7805 R1 Chip resistor, 1.2k ohms Digi-Key P1.2KGCT-ND R2 Chip resistor, 1.3k ohms Digi-Key P1.3KGCT-ND R3 Chip resistor, 2k ohms Digi-Key P2KECT-ND R4 Potentiometer, 2k ohms Digi-Key 3224W-202ETR-ND R5, R7 Chip resistor, 5.1k ohms Digi-Key P5.1KECT-ND R6 Chip resistor, 10 ohms Digi-Key P10ECT-ND *Gerber Files for this circuit available on request

Data Sheet 8 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-2 C66065-A0003-C723-01-0027 H-33288-2.dwg Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain, S = source, G = gate. 6. Gold plating less than 0.25 micron [10 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower

Data Sheet 9 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution C66065-A0003-C724-01-0027 H-34288-2.dwg Package Outline Specifications (cont.) Package H-34288-2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain, S = source, G = gate. 6. Gold plating less than 0.25 micron [10 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower

Data Sheet 10 of 10 Rev. 04, 2009-07-16 PTFA142401EL/FL V4 Confidential, Limited Internal Distribution Revision History: 2009-07-16 Data Sheet Previous Version: 2009-03-31, Data Sheet Page Subjects (major changes since last revision) 6, 7 Fixed typing error GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-07-16 Published by Infineon Technologies AG

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com/rfpower ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International