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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Broadband internal matching
  • Typical two-carrier WCDMA performance at

960 MHz, 30 V

  • Average output power = 50 W - Linear Gain = 17.5 dB - Efficiency = 29% - Intermodulation distortion = –32 dBc - Adjacent channel power = –42.5 dBc
  • Typical CW performance, 960 MHz, 30 V - Output power at P 1dB = 250 W - Linear Gain = 17.5 dB - Efficiency = 52%
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift
  • Capable of handling 10:1 VSWR @ 30 V,

220 W (CW) output power

  • Pb-free, RoHS-compliant PTFA092213FL Package H-34288-4/2 -55 -50 -45 -40 -35 -30 -25 -20 -30 -20 -10 30 35 40 45 50 Output Power (dBm) Two-carrier WCDMA Performance VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz Bandwidth IMD_lower ACPR Gain IMD_upper Gain (dB) , Drain Efficiency (%) IMD (dBc) , ACPR (dBc) Efficiency

Data Sheet 2 of 10 Rev. 04, 2010-11-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1850 mA, POUT = 200 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 17.5 — dB Drain Efficiency hD 40 42 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.04 — W Operating Gate Voltage VDS = 30 V, IDQ = 1850 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70 °C, 220 W CW) RqJC 0.23 °C/W

Ordering Information

Type and Version Package Outline Package Description Shipping PTFA092213EL V4 H-33288-6 Thermally-enhanced, slotted flange, single-ended Tray PTFA092213EL V4 R250 H-33288-6 Thermally-enhanced, slotted flange, single-ended Tape & Reel, 250 pcs PTFA092213FL V5 H-34288-4/2 Thermally-enhanced, earless flange, single-ended Tray PTFA092213FL V5 R250 H-34288-4/2 Thermally-enhanced, earless flange, single-ended Tape & Reel, 250 pcs

Confidential, Limited Internal Distribution Data Sheet 3 of 10 Rev. 04, 2010-11-04 Typical Performance 35 40 45 50 55 Drain Efficiency (%) Gain (dB) Output Power (dBm) CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 960 MHz Efficiency Gain -40 -35 -30 -25 -20 -15 -10 900 910 920 930 940 950 960 970 980 990 Return Loss (dB) Frequency (MHz) Broadband Two-tone Gain, Efficiency & Return Loss vs. Frequency VDD = 30 V, IDQ = 1.85 A, POUT = 110 W Return Loss Gain Efficiency Drain Efficiency (%), Gain (dB) 35 40 45 50 55 Power Gain (dB) Output Power (dBm) Power Sweep, CW VDD = 30 V, ƒ = 960 MHz IDQ = 1.85 A IDQ = 2.6 A IDQ = 1.1 A 35 40 45 50 55 Drain Efficiency (%) Gain (dB) Output Power (dBm) CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 960 MHz Efficiency Gain TCASE = -10°C TCASE = 25°C TCASE = 90°C

Data Sheet 4 of 10 Rev. 04, 2010-11-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Typical Performance (cont.) -70 -60 -50 -40 -30 -20 35 40 45 50 55 IMD (dBc) Output Power, PEP (dBm) Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ1 = 960 MHz, ƒ2 = 959 MHz 5th 7th 3rd Order -80 -70 -60 -50 -40 -30 30 35 40 45 50 Drain Efficiency (%) Output Power (dBm), Avg. IS-95 CDMA Performance VDD = 30 V, IDQ = 1.85 A, ƒ = 960 MHz Adj 750 kHz Alt1 1.98 MHz Efficiency Adj. Ch. Power Ratio (dBc) -60 -55 -50 -45 -40 -35 -30 30 35 40 45 50 IMD (dBc) Output Power (dBm) Single-carrier WCDMA Performance VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8.5 dB,

3.84 MHz Bandwidth

Gain (dB), Efficiency (%)

Confidential, Limited Internal Distribution Data Sheet 5 of 10 Rev. 04, 2010-11-04 Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX 910 1.44 –3.01 1.57 –2.30 920 1.43 –2.92 1.56 –2.18 930 1.42 –2.83 1.55 –2.05 940 1.42 –2.74 1.54 –1.93 950 1.41 –2.66 1.53 –1.81 960 1.41 –2.57 1.52 –1.69 970 1.41 –2.48 1.51 –1.56 See next page for reference circuit information 0.1 0.3 0.2 0.4 0.1 0.3 0.2 0.4 0.1 0.3 0.2 0.4 AVELENGTHS TOW ARD GENERATOR ---> 0.05 0.45 0.05 0.45 <---W AVELENGTHS TOW ARD LOA D - 0.0 ed to 50 Ohms 2213efl v4 Z Load Z Source

910 MHz

970 MHz

Z0 = 50 W Z Source Z Load G S D

Data Sheet 6 of 10 Rev. 04, 2010-11-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Reference Circuit Reference circuit block diagram for ƒ = 960 MHz .001µF C30 1.7pF C29 1.7pF DUT 0.001µF .01µF C14 4.8pF C13 4.8pF 1.2K  1.2K  1.2K  0.001µF 0.001µF BCP56 1.3K  QQ1 LM7805 0.001µF VDD 10  C11 33pF 47pF C10 33pF 5.1K  10  C12 3.0pF 2 3 4RF_IN .01µF RF_OUT C16 10µF C18 1µF C17 .01µF C21 10µF 50V C31 33pF C20 10µF C19 10µF C22 10µF C25 1µF C24 .01µF C28 10µF 50V C27 10µF C26 10µF VDD 10  4.7µF C15 10µF C23 10µF 1.0K  a 0 9 2 2 1 3 e f l _ b d _ 0 9 - 0 2 - 2 0 1 0 Circuit Assembly Information DUT PTFA092213EL or PTFA092213FL PCB LTN/PTFA092213EF 0.76 mm [.030"] thick, er = 3.48, Rogers RO4350, 1 oz. copper Electrical Characteristics at 960 MHz Transmission Electrical Dimensions: L x W (mm) Dimensions: L x W (in.) Line Characteristics

Confidential, Limited Internal Distribution Data Sheet 7 of 10 Rev. 04, 2010-11-04 Reference Circuit (cont.) Reference circuit assembly diagram (not to scale)* * Gerber Files for this circuit available on request Component Description Suggested Manufacturer P/N C1, C2, C3, C4, C5 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C18, C25 Capacitor, 1 µF ATC 920C105 C8 Capacitor, 4.7 µF, 16 V Digi-Key PCS3475CT-ND C6, C9, C17, C24 Capacitor, 0.01µF ATC 200B 103 C15, C16, C19, C20, Tantalum Capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400 C22, C23, C26, C27 C21, C28 Tantalum Capacitor, 10 µF, 50 V Digi-Key P5571-ND C29, C30 Ceramic Capacitor, 1.7 pF ATC 100B 1R7 C13, C14 Ceramic Capacitor, 4.8 pF ATC 100B 4R8 C12 Ceramic Capacitor, 3.0 pF ATC 100B 3R0 C10, C11, C31 Ceramic Capacitor, 33 pF ATC 100B 330 C7 Ceramic Capacitor, 47 pF ATC 100B 470 Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage Regulator National Semiconductor LM7805 R1, R4 Chip Resistor, 1.2 k W Digi-Key P1.2KGCT-ND R2 Chip Resistor, 1.3 k W Digi-Key P1.3KGCT-ND R3 Chip Resistor, 2 k W Digi-Key P2KECT-ND R5 Potentiometer, 2 k W Digi-Key 3224W-202ETR-ND R8 Chip Resistor, 5.1 k W Digi-Key P5.1KECT-ND R6, R7, R9 Chip Resistor, 10 W Digi-Key P10ECT-ND NOTES: UNLESS OTHERWISE INDICATED 1. Original drawing was DraftingFileName 2. The contents of this drawing are intended to represent the product in EFLarketing graphics only, and are not intended to be used for any production purpose. THIS DOCUEFLENT AND THE INFOREFLATION AND IDEAS CONTAINED HEREIN, ARE THE PROPERTY OF INFINEON TECHNOLOGIES AND SHALL BE EFLAINTAINED IN CONFIDENCE AND SHALL NOT BE DISCLOSED, DUPLICATED, COPIED OR USED AS A BASIS FOR THE EFLANUFACTURE OR SALE OF ANY PRODUCT OR PROCESS WITHOUT PRIOR WRITTEN CONSENT OF INFINEON TECHNOLOGIES. APPROVALS DATE DRAWN BY: CHECKED BY: ENGINEER: R & D EFLANAGER: EFLFG ENGINEER: QA: THIRD ANGLE PROJECTION INFINEON TECHNOLOGIES

18275 SERENE DRIVE

EFLORGAN HILL, CA 95037, U.S.A. PHONE: 408-776-0600 FAX: 408-779-3108 EUS/KR FOREFL 148E REVSIONS DESCRIPTION: PRODUCT: SIZE: DRAWING NUEFLBER: REV ZONE REV DESCRIPTION DATE APPROVED A INITIAL RELEASE PER ECN IFX-04-XXX BN 02-10-04 B Northwood 2008-11-12 XX XX XX XX XX REFERENCE CIRCUIT ASSEEFLBLY DIAGRAEFL PTFA092213EFL SIZE: DRAWING NUEFLBER: REV SCALE: NONE FILE NAEFLE: a092213efl_ckt.vsd SHEET: 2 OF 2 a092213efl_ckt.vsd A a092213efl_CD V66100-G9270-C331-01-7631.dwg THE CONTENTS OF THIS DRAWING ARE INTENDED TO REPRESENT THE PRODUCT IN EFLARKETING GRAPHICS ONLY, AND ARE NOT INTENDED TO BE USED FOR ANY PRODUCTION OR INTERNAL QUALIFICATION PURPOSE. PTFA 092213EFL REFERENCE ON GRAPHIC: a092213efl_cd_7-9-09 RF_OUT a 0 9 2 2 1 3 e f l _ c d _ 1 1 - 0 4 - 2 0 1 0 RF_IN C12 C30 C29 C10 C8 C7 C6 R4 C5 C11 C19 C18 C15 C16 C17 C20 C31 C24 C23 C22 C27 C26C25 C14 C28 C21 QQ1 Q1 C13 VDD VDD VDD

Data Sheet 8 of 10 Rev. 04, 2010-11-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-6 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: A = gate, B = source, C = drain, D = VDD, E, F = N.C. 6. Gold plating thickness: 0.25 micron [10 microinch] max. +.254 –.127 +. 010 –.005 ] LC D G S CL 19.558±.510 [.770±.020] 27.940 [1.100] 2X 12.700 [.500] 45° X 2.032 [45° X .080] 4X 1.143 [.045] (4 PLS) 9.398 [.370] 9.779 [.385] 34.036 [1.340]1.016 [.040] 1.575 [.062] (SPH) 22.352±.200 [.880±.008] 4.039 [.159 2X 22.860 [.900] [.200] (2 PLS) CL 4.889±.510 [.192±.020] 4X R1.524 [R.060] 2X R1.626 [R.064] V E V F 4X 30° H -33288 - 6_ po _02 -18 - 2010 2X 5.080

Confidential, Limited Internal Distribution Data Sheet 9 of 10 Rev. 04, 2010-11-04 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Package Outline Specifications (cont.) Package H-34288-4/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 6. Gold plating thickness: 0.25 micron [10 microinch] max. LC D G CL 19.558±.510 [.770±.020] 2X 12.700 [.500] 45° X 2.032 [45° X .080] 2X 1.143 [.045] 9.398 [.370] 9.779 [.385] 23.114 [.910] 1.016 [.040] 1.575 [.062] (SPH) 22.352±.200 [.880±.008] 4.039+.254 -.127 [.159+.010 -.005 ] 22.860 [.900] 2X 5.080 [.200] 4.889±.510 [.192±.020] V V S 2X 30° C 66065-A0003- C743- 01-0027 H- 34288- 4_2 .dw g LC 4X R0.508+.381 -.127 [R.020+.015 -.005 ]

Data Sheet 10 of 10 Rev. 04, 2010-11-04 Edition 2010-11-04 Published by Infineon Technologies AG

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTFA092213EL V4/ PTFA092213 FL V5 Confidential, Limited Internal Distribution Revision History: 2010-11-04 Data Sheet Previous Version: 2010-09-03, Data Sheet Page Subjects (major changes since last revision) 1, 2, 8 Updated eared flange package information